DE69404189T2 - Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante - Google Patents

Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante

Info

Publication number
DE69404189T2
DE69404189T2 DE69404189T DE69404189T DE69404189T2 DE 69404189 T2 DE69404189 T2 DE 69404189T2 DE 69404189 T DE69404189 T DE 69404189T DE 69404189 T DE69404189 T DE 69404189T DE 69404189 T2 DE69404189 T2 DE 69404189T2
Authority
DE
Germany
Prior art keywords
materials
dielectric constant
high dielectric
doped electrodes
lightly donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404189T
Other languages
English (en)
Other versions
DE69404189D1 (de
Inventor
Scott R Summerfelt
Howard R Beratan
Bruce Gnade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69404189D1 publication Critical patent/DE69404189D1/de
Publication of DE69404189T2 publication Critical patent/DE69404189T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H01L27/11502—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/917—Plural dopants of same conductivity type in same region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
DE69404189T 1993-03-31 1994-03-28 Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante Expired - Fee Related DE69404189T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4094693A 1993-03-31 1993-03-31

Publications (2)

Publication Number Publication Date
DE69404189D1 DE69404189D1 (de) 1997-08-21
DE69404189T2 true DE69404189T2 (de) 1998-01-08

Family

ID=21913864

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404189T Expired - Fee Related DE69404189T2 (de) 1993-03-31 1994-03-28 Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante

Country Status (4)

Country Link
US (3) US6204069B1 (de)
EP (1) EP0618597B1 (de)
JP (1) JPH06326250A (de)
DE (1) DE69404189T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055836A1 (de) * 2006-11-14 2008-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrisch leitfähiger, keramischer Kontaktschichtaufbau und Verfahren zu seiner Herstellung

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5453908A (en) * 1994-09-30 1995-09-26 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by holmium donor doping
DE69508737T2 (de) * 1994-10-04 1999-10-07 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält
KR0147639B1 (ko) 1995-05-29 1998-08-01 김광호 고유전율 캐패시터의 하부전극 형성방법
CA2225681C (en) * 1995-06-28 2001-09-11 Bell Communications Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
JPH09331020A (ja) * 1996-06-07 1997-12-22 Sharp Corp 誘電体薄膜キャパシタ素子及びその製造方法
US5978207A (en) * 1996-10-30 1999-11-02 The Research Foundation Of The State University Of New York Thin film capacitor
DE19703343C2 (de) * 1997-01-30 2003-02-20 Ortwin F Schirmer Photorefraktiver Kristall
US6935002B1 (en) * 1997-10-13 2005-08-30 Murata Manufacturing Co., Ltd. Method of manufacturing a nonreciprocal circuit device
US7034353B2 (en) * 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US6150706A (en) * 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6682970B1 (en) 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
DE19946301A1 (de) * 1998-04-02 2001-04-19 Asta Medica Ag Indolyl-3-glyoxylsäure-Derivate mit therapeutisch wertvollen Eigenschaften
US6139780A (en) * 1998-05-28 2000-10-31 Sharp Kabushiki Kaisha Dynamic random access memories with dielectric compositions stable to reduction
US6128178A (en) * 1998-07-20 2000-10-03 International Business Machines Corporation Very thin film capacitor for dynamic random access memory (DRAM)
US6358810B1 (en) 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
IL143649A0 (en) * 1999-02-17 2002-04-21 Ibm Microelectronic device for storing information and method thereof
DE19929308C1 (de) * 1999-06-25 2000-11-09 Siemens Ag Verfahren zur Herstellung einer ferroelektrischen Speicheranordnung
US6526833B1 (en) * 2000-03-13 2003-03-04 Massachusetts Institute Of Technology Rhombohedral-phase barium titanate as a piezoelectric transducer
US20020036313A1 (en) * 2000-06-06 2002-03-28 Sam Yang Memory cell capacitor structure and method of formation
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6642567B1 (en) 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
JP2002252297A (ja) * 2001-02-23 2002-09-06 Hitachi Ltd 多層回路基板を用いた電子回路装置
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
WO2002075780A2 (en) * 2001-03-21 2002-09-26 Koninklijke Philips Electronics N.V. Electronic device having dielectric material of high dielectric constant
US6503763B2 (en) * 2001-03-27 2003-01-07 Sharp Laboratories Of America, Inc. Method of making MFMOS capacitors with high dielectric constant materials
US6900498B2 (en) * 2001-05-08 2005-05-31 Advanced Technology Materials, Inc. Barrier structures for integration of high K oxides with Cu and Al electrodes
KR100493411B1 (ko) * 2001-06-12 2005-06-07 주식회사 하이닉스반도체 반도체 소자의 셀 플러그 형성방법
US6727140B2 (en) * 2001-07-11 2004-04-27 Micron Technology, Inc. Capacitor with high dielectric constant materials and method of making
US6541281B2 (en) * 2001-07-16 2003-04-01 Tachyon Semiconductors Corporation Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same
US6762090B2 (en) * 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
JP2003257955A (ja) * 2002-03-01 2003-09-12 Fujitsu Ltd 酸化還元反応の臨界状態を実現する方法およびその臨界状態を評価する方法ならびに強誘電体膜の製造方法および強誘電体膜の製造装置
US6908807B2 (en) * 2002-03-26 2005-06-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US6825517B2 (en) 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
KR100536590B1 (ko) * 2002-09-11 2005-12-14 삼성전자주식회사 강유전체 커패시터 및 그 제조 방법
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US7385954B2 (en) * 2003-07-16 2008-06-10 Lucent Technologies Inc. Method of transmitting or retransmitting packets in a communication system
US7078785B2 (en) * 2003-09-23 2006-07-18 Freescale Semiconductor, Inc. Semiconductor device and making thereof
JP4020871B2 (ja) * 2004-02-19 2007-12-12 株式会社東芝 半導体装置
EP1631103B1 (de) * 2004-08-28 2008-03-19 Alcatel Lucent Verfahren zum Aufbau eines positionsabhängigen Gruppengesprächs
EP1637502A1 (de) * 2004-09-14 2006-03-22 Kerr-McGee Pigments GmbH Feinteilige Erdalkalititanate und Verfahren zu deren Herstellung unter Verwendung von Titanoxidhydratpartikeln
KR100781964B1 (ko) * 2005-12-02 2007-12-06 한국과학기술연구원 내장형 커패시터 및 그 제조 방법
US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
JP5140972B2 (ja) * 2006-09-12 2013-02-13 富士通セミコンダクター株式会社 半導体装置の製造方法
DE102008008699B4 (de) * 2008-02-11 2010-09-09 Eads Deutschland Gmbh Abstimmbarer planarer ferroelektrischer Kondensator
TWI814730B (zh) * 2017-07-19 2023-09-11 日商太陽誘電股份有限公司 積層陶瓷電容器及其製造方法
JP7145652B2 (ja) * 2018-06-01 2022-10-03 太陽誘電株式会社 積層セラミックコンデンサおよびその製造方法
JP7415696B2 (ja) * 2020-03-16 2024-01-17 Tdk株式会社 圧電組成物および電子部品

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305304A (en) * 1962-11-23 1967-02-21 Hooker Chemical Corp Purification of phosphorus-containing solutions
US3305394A (en) * 1964-06-30 1967-02-21 Ibm Method of making a capacitor with a multilayered ferroelectric dielectric
US3268783A (en) * 1965-10-05 1966-08-23 Murata Manufacturing Co Capacitor comprising an nu-type semiconductor metallic oxide and a layer of compensated material
DE1614605B2 (de) 1967-09-20 1974-06-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Kondensatordielektrikum mit inneren Sperrschichten und geringerer Temperaturabhängigkeit
US3933668A (en) 1973-07-16 1976-01-20 Sony Corporation Intergranular insulation type polycrystalline ceramic semiconductive composition
US4131903A (en) 1976-08-03 1978-12-26 Siemens Aktiengesellschaft Capacitor dielectric with inner blocking layers and method for producing the same
DE2641701C3 (de) * 1976-09-16 1980-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Kondensatordielektrikums mit inneren Sperrschichten
DE2659672B2 (de) 1976-12-30 1980-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung
US4309295A (en) * 1980-02-08 1982-01-05 U.S. Philips Corporation Grain boundary barrier layer ceramic dielectrics and the method of manufacturing capacitors therefrom
US4419310A (en) * 1981-05-06 1983-12-06 Sprague Electric Company SrTiO3 barrier layer capacitor
WO1986001497A1 (en) * 1984-09-03 1986-03-13 Nippon Telegraph And Telephone Corporation Perovskite-type ceramic material and a process for producing the same
JPS61229236A (ja) 1985-04-03 1986-10-13 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法
EP0337373A3 (de) * 1988-04-12 1991-02-13 Matsushita Electric Industrial Co., Ltd. Dielektrisches Mehrschichtbauelement
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5003428A (en) 1989-07-17 1991-03-26 National Semiconductor Corporation Electrodes for ceramic oxide capacitors
US5053917A (en) 1989-08-30 1991-10-01 Nec Corporation Thin film capacitor and manufacturing method thereof
US5206213A (en) * 1990-03-23 1993-04-27 International Business Machines Corp. Method of preparing oriented, polycrystalline superconducting ceramic oxides
US5162294A (en) * 1991-02-28 1992-11-10 Westinghouse Electric Corp. Buffer layer for copper oxide based superconductor growth on sapphire
DE69205063T2 (de) 1991-05-16 1996-02-29 Nec Corp Dünnschichtkondensator.
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5338951A (en) * 1991-11-06 1994-08-16 Ramtron International Corporation Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices
US5406447A (en) * 1992-01-06 1995-04-11 Nec Corporation Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
JP3351856B2 (ja) * 1992-04-20 2002-12-03 テキサス インスツルメンツ インコーポレイテツド 構造体およびコンデンサの製造方法
US5326721A (en) * 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
DE69325614T2 (de) * 1992-05-01 2000-01-13 Texas Instruments Inc Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
US5348894A (en) * 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055836A1 (de) * 2006-11-14 2008-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrisch leitfähiger, keramischer Kontaktschichtaufbau und Verfahren zu seiner Herstellung
DE102006055836B4 (de) * 2006-11-14 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrisch leitfähiger Aufbau aus zwei Bauteilen und Verfahren zur Herstellung des Aufbaus

Also Published As

Publication number Publication date
US6319542B1 (en) 2001-11-20
DE69404189D1 (de) 1997-08-21
US6593638B1 (en) 2003-07-15
EP0618597B1 (de) 1997-07-16
US6204069B1 (en) 2001-03-20
JPH06326250A (ja) 1994-11-25
EP0618597A1 (de) 1994-10-05

Similar Documents

Publication Publication Date Title
DE69404189D1 (de) Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
DE69411873D1 (de) Elektrostatische Halteplatte mit Referenzelektrode
DE69402185D1 (de) Spannungsgesteuerter ozillator mit effizienter prozesskompensation
DE69404354D1 (de) Verbesserte Elektroden-Zwischenschicht für Materialien mit hohen dielektrisches Konstante
DE69506560D1 (de) Schneckenförderer mit mehreren konzentrischen schneckengängen
DE69308484T2 (de) Schraube mit Ausnehmung
DE69405462D1 (de) Beschichtungsmaterial für Solarmodul
DE4392041D2 (de) Schneckenpresse
DE69430934T2 (de) Gesinterte Elektrode auf einem Substrat
DE69430205D1 (de) Verpackung für elektroden
DE69324238D1 (de) Elektrode
DE69431816T2 (de) Kodierung mit hoher Wirksamkeit
EP0490631A3 (en) Ion-selective electrodes
DE69618521D1 (de) Harzmasse mit niedriger Dielektrizitätskonstante
KR960702737A (ko) 구강내-처치용 전극(intraoral-procedures electrode)
DE69523556T2 (de) Flacher bildschirm mit hoher spannung zwischen elektroden
DE59402990D1 (de) Druckverfahren mit Ferroelektrika
ATA13993A (de) Elektrodenanordnung
FI921457A0 (fi) Svetsanordning foer roer.
DE69407451D1 (de) Sterilisator mit verminderter Oberflächenverschmutzung
DE9310713U1 (de) Farbauftragwalze
DK76393A (da) Underlagsmateriale
DE69414653T2 (de) Behälter mit Leitplattenanordnung
DE69432257D1 (de) Referenzelektrode
ATA79190A (de) Deren verwendung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee