ATE360051T1 - Poliersystem und verfahren zu seiner verwendung - Google Patents
Poliersystem und verfahren zu seiner verwendungInfo
- Publication number
- ATE360051T1 ATE360051T1 AT00953960T AT00953960T ATE360051T1 AT E360051 T1 ATE360051 T1 AT E360051T1 AT 00953960 T AT00953960 T AT 00953960T AT 00953960 T AT00953960 T AT 00953960T AT E360051 T1 ATE360051 T1 AT E360051T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing
- substrate
- acids
- layer
- metal layer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 5
- 239000002253 acid Substances 0.000 abstract 4
- 150000007513 acids Chemical class 0.000 abstract 4
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- 150000001408 amides Chemical class 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 150000001414 amino alcohols Chemical class 0.000 abstract 1
- 150000007942 carboxylates Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 235000011180 diphosphates Nutrition 0.000 abstract 1
- 150000002466 imines Chemical class 0.000 abstract 1
- 125000001841 imino group Chemical group [H]N=* 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 150000002825 nitriles Chemical class 0.000 abstract 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 235000021317 phosphate Nutrition 0.000 abstract 1
- 150000003009 phosphonic acids Chemical class 0.000 abstract 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 150000007970 thio esters Chemical class 0.000 abstract 1
- 150000003566 thiocarboxylic acids Chemical class 0.000 abstract 1
- 150000003568 thioethers Chemical class 0.000 abstract 1
- 150000003573 thiols Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14881399P | 1999-08-13 | 1999-08-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE360051T1 true ATE360051T1 (de) | 2007-05-15 |
Family
ID=22527505
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00952726T ATE292167T1 (de) | 1999-08-13 | 2000-08-10 | Poliersystem mit stopmittel und verfahren zu seiner verwendung |
AT00953960T ATE360051T1 (de) | 1999-08-13 | 2000-08-10 | Poliersystem und verfahren zu seiner verwendung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00952726T ATE292167T1 (de) | 1999-08-13 | 2000-08-10 | Poliersystem mit stopmittel und verfahren zu seiner verwendung |
Country Status (14)
Country | Link |
---|---|
US (1) | US6852632B2 (de) |
EP (3) | EP1226220B1 (de) |
JP (5) | JP4188598B2 (de) |
KR (2) | KR100590666B1 (de) |
CN (2) | CN100368496C (de) |
AT (2) | ATE292167T1 (de) |
AU (2) | AU6537000A (de) |
CA (2) | CA2378790A1 (de) |
DE (2) | DE60019142T2 (de) |
HK (2) | HK1046423A1 (de) |
IL (2) | IL147234A0 (de) |
MY (2) | MY139997A (de) |
TW (2) | TW570965B (de) |
WO (2) | WO2001012740A1 (de) |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503418B2 (en) * | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
US6976905B1 (en) | 2000-06-16 | 2005-12-20 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
US20020098784A1 (en) * | 2001-01-19 | 2002-07-25 | Saket Chadda | Abrasive free polishing in copper damascene applications |
JP4231632B2 (ja) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
KR100535074B1 (ko) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
US20030003747A1 (en) * | 2001-06-29 | 2003-01-02 | Jae Hong Kim | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
AU2002334406A1 (en) * | 2001-09-03 | 2003-03-18 | Showa Denko K.K. | Polishing composition |
US6805812B2 (en) | 2001-10-11 | 2004-10-19 | Cabot Microelectronics Corporation | Phosphono compound-containing polishing composition and method of using same |
JP4095798B2 (ja) * | 2001-12-20 | 2008-06-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7004819B2 (en) | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US6755721B2 (en) | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
KR101005304B1 (ko) * | 2002-03-25 | 2011-01-05 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 탄탈 배리어 제거 용액 |
JP2004006628A (ja) * | 2002-03-27 | 2004-01-08 | Hitachi Ltd | 半導体装置の製造方法 |
US7087187B2 (en) | 2002-06-06 | 2006-08-08 | Grumbine Steven K | Meta oxide coated carbon black for CMP |
KR100474537B1 (ko) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
US6911393B2 (en) * | 2002-12-02 | 2005-06-28 | Arkema Inc. | Composition and method for copper chemical mechanical planarization |
JP2004273547A (ja) * | 2003-03-05 | 2004-09-30 | Kao Corp | 研磨速度選択比向上剤 |
US7306748B2 (en) * | 2003-04-25 | 2007-12-11 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining ceramics |
US8025808B2 (en) | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
US7160807B2 (en) * | 2003-06-30 | 2007-01-09 | Cabot Microelectronics Corporation | CMP of noble metals |
KR100499642B1 (ko) * | 2003-09-05 | 2005-07-05 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 제조 방법 |
US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
JP4608196B2 (ja) * | 2003-09-30 | 2011-01-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
US7255810B2 (en) * | 2004-01-09 | 2007-08-14 | Cabot Microelectronics Corporation | Polishing system comprising a highly branched polymer |
JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
JP4836441B2 (ja) * | 2004-11-30 | 2011-12-14 | 花王株式会社 | 研磨液組成物 |
TWI315886B (en) * | 2005-04-08 | 2009-10-11 | Ohara Kk | A substrate and a method for polishing a substrate |
US7316977B2 (en) * | 2005-08-24 | 2008-01-08 | Air Products And Chemicals, Inc. | Chemical-mechanical planarization composition having ketooxime compounds and associated method for use |
US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
US8353740B2 (en) | 2005-09-09 | 2013-01-15 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
US7708904B2 (en) | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
US20070068902A1 (en) * | 2005-09-29 | 2007-03-29 | Yasushi Matsunami | Polishing composition and polishing method |
US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
US7265055B2 (en) | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
CN1955212B (zh) * | 2005-10-28 | 2011-08-03 | 安集微电子(上海)有限公司 | 用于阻挡层的化学机械抛光浆料 |
FR2896165B1 (fr) * | 2006-01-13 | 2012-08-03 | Centre Nat Rech Scient | Preparation d'un substrat inorganique presentant des proprietes anti-microbiennes |
KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
JP2007266075A (ja) * | 2006-03-27 | 2007-10-11 | Fujifilm Corp | 金属用研磨液 |
JP2007266077A (ja) * | 2006-03-27 | 2007-10-11 | Fujifilm Corp | 金属用研磨液 |
CN102633288A (zh) * | 2006-04-21 | 2012-08-15 | 日立化成工业株式会社 | 氧化物粒子的制造方法、浆料、研磨剂和基板的研磨方法 |
US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
EP2027970A4 (de) * | 2006-05-31 | 2009-11-18 | Asahi Glass Co Ltd | Polierzusammensetzung und polierverfahren |
CN101130665A (zh) * | 2006-08-25 | 2008-02-27 | 安集微电子(上海)有限公司 | 用于抛光低介电材料的抛光液 |
US7776230B2 (en) * | 2006-08-30 | 2010-08-17 | Cabot Microelectronics Corporation | CMP system utilizing halogen adduct |
CN101153205A (zh) * | 2006-09-29 | 2008-04-02 | 安集微电子(上海)有限公司 | 用于抛光低介电材料的化学机械抛光液 |
US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
US8168075B2 (en) | 2006-12-20 | 2012-05-01 | Laconto Ronald W | Methods for machining inorganic, non-metallic workpieces |
US20080149884A1 (en) | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
JP2008177373A (ja) * | 2007-01-18 | 2008-07-31 | Nitta Haas Inc | 研磨組成物 |
US20100176335A1 (en) * | 2007-06-08 | 2010-07-15 | Techno Semichem Co., Ltd. | CMP Slurry Composition for Copper Damascene Process |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
US7803711B2 (en) * | 2007-09-18 | 2010-09-28 | Cabot Microelectronics Corporation | Low pH barrier slurry based on titanium dioxide |
US20090090696A1 (en) * | 2007-10-08 | 2009-04-09 | Cabot Microelectronics Corporation | Slurries for polishing oxide and nitride with high removal rates |
US20100216309A1 (en) * | 2007-10-23 | 2010-08-26 | Hitachi Chemical Company, Ltd. | Cmp polishing liquid and method for polishing substrate using the same |
DK2225175T3 (da) | 2007-12-13 | 2013-03-18 | Akzo Nobel Nv | Stabiliserede hydrogenperoxidopløsninger |
US20090215266A1 (en) * | 2008-02-22 | 2009-08-27 | Thomas Terence M | Polishing Copper-Containing patterned wafers |
CN102007196B (zh) * | 2008-03-07 | 2014-10-29 | 高级技术材料公司 | 非选择性氧化物蚀刻湿清洁组合物及使用方法 |
JP2008300858A (ja) * | 2008-07-15 | 2008-12-11 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
CN101333419B (zh) * | 2008-08-05 | 2011-06-29 | 清华大学 | 一种集成电路铜布线的无磨粒化学机械抛光液 |
US20100081279A1 (en) * | 2008-09-30 | 2010-04-01 | Dupont Air Products Nanomaterials Llc | Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices |
US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US8025813B2 (en) | 2009-11-12 | 2011-09-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
US20110151266A1 (en) * | 2009-12-03 | 2011-06-23 | Basf Se | Anticorrosion pigments with positive zeta potential |
US8916473B2 (en) | 2009-12-14 | 2014-12-23 | Air Products And Chemicals, Inc. | Method for forming through-base wafer vias for fabrication of stacked devices |
CN102101976A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102101978B (zh) * | 2009-12-18 | 2014-07-23 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP5657247B2 (ja) * | 2009-12-25 | 2015-01-21 | 花王株式会社 | 研磨液組成物 |
JP6101421B2 (ja) * | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
TWI568541B (zh) * | 2010-12-22 | 2017-02-01 | Jsr Corp | Chemical mechanical grinding method |
US8524540B2 (en) * | 2011-02-01 | 2013-09-03 | Nilesh Kapadia | Adhesion promoting composition for metal leadframes |
US20120203765A1 (en) * | 2011-02-04 | 2012-08-09 | Microsoft Corporation | Online catalog with integrated content |
CN102181232B (zh) * | 2011-03-17 | 2013-12-11 | 清华大学 | Ulsi多层铜布线铜的低下压力化学机械抛光的组合物 |
KR20140048868A (ko) * | 2011-03-30 | 2014-04-24 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 그것을 사용한 연마 방법 및 반도체 디바이스의 제조 방법 |
US20140311044A1 (en) * | 2011-04-25 | 2014-10-23 | Bando Chemical Industries, Ltd. | Polishing film |
CN105086836A (zh) * | 2015-08-19 | 2015-11-25 | 三峡大学 | 一种氧化铈抛光液及其制备方法 |
JP6797811B2 (ja) * | 2015-09-30 | 2020-12-09 | 株式会社フジミインコーポレーテッド | 研磨方法 |
KR102543680B1 (ko) * | 2015-12-17 | 2023-06-16 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
KR102544644B1 (ko) * | 2015-12-24 | 2023-06-19 | 솔브레인 주식회사 | 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법 |
WO2017147891A1 (en) * | 2016-03-04 | 2017-09-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a semiconductor substrate |
WO2018055985A1 (ja) * | 2016-09-23 | 2018-03-29 | 株式会社フジミインコーポレーテッド | 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法 |
US11655394B2 (en) * | 2017-08-09 | 2023-05-23 | Resonac Corporation | Polishing solution and polishing method |
US20200102476A1 (en) * | 2018-09-28 | 2020-04-02 | Versum Materials Us, Llc | Barrier Slurry Removal Rate Improvement |
JP7379789B2 (ja) | 2020-03-02 | 2023-11-15 | 株式会社タイテム | コロイダルシリカスラリー |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE400575B (sv) | 1974-12-13 | 1978-04-03 | Nordnero Ab | Bad for betning av koppar och dess legeringar |
US4404074A (en) | 1982-05-27 | 1983-09-13 | Occidental Chemical Corporation | Electrolytic stripping bath and process |
US4452643A (en) | 1983-01-12 | 1984-06-05 | Halliburton Company | Method of removing copper and copper oxide from a ferrous metal surface |
JPS6396599A (ja) | 1986-10-14 | 1988-04-27 | 三菱重工業株式会社 | 金属ルテニウムの溶解法 |
DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
JPH01270512A (ja) | 1988-04-21 | 1989-10-27 | Tanaka Kikinzoku Kogyo Kk | 貴金属の溶解方法 |
US4875973A (en) | 1988-07-27 | 1989-10-24 | E. I. Du Pont De Nemours And Company | Hydrogen peroxide compositions containing a substituted aminobenzaldehyde |
JP2800020B2 (ja) | 1989-04-18 | 1998-09-21 | 東海電化工業株式会社 | 錫又は錫合金の化学溶解剤 |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
JPH03202269A (ja) * | 1989-10-12 | 1991-09-04 | Nalco Chem Co | 低ナトリウム低金属シリカ研磨スラリー |
JPH03232980A (ja) | 1990-02-06 | 1991-10-16 | Shinko Electric Ind Co Ltd | 銅もしくは銅合金上の銀剥離液 |
JPH0781132B2 (ja) | 1990-08-29 | 1995-08-30 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
US5981454A (en) * | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
JP3481379B2 (ja) | 1995-08-23 | 2003-12-22 | メック株式会社 | 電気めっき法 |
JPH0982668A (ja) * | 1995-09-20 | 1997-03-28 | Sony Corp | 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法 |
DE69611653T2 (de) * | 1995-11-10 | 2001-05-03 | Tokuyama Corp., Tokuya | Poliersuspensionen und Verfahren zu ihrer Herstellung |
JPH1015811A (ja) * | 1996-06-28 | 1998-01-20 | Kao Corp | 加工用助剤組成物及びこれを用いた表面加工方法 |
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5972792A (en) * | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US5773364A (en) | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
SG68005A1 (en) * | 1996-12-02 | 1999-10-19 | Fujimi Inc | Polishing composition |
JPH10172936A (ja) * | 1996-12-05 | 1998-06-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
CN1165975C (zh) * | 1997-04-30 | 2004-09-08 | 美国3M公司 | 对半导体晶片表面进行平整的方法 |
US5855633A (en) | 1997-06-06 | 1999-01-05 | Lockheed Martin Energy Systems, Inc. | Lapping slurry |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP3082722B2 (ja) * | 1997-10-07 | 2000-08-28 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6001730A (en) | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
US6096652A (en) * | 1997-11-03 | 2000-08-01 | Motorola, Inc. | Method of chemical mechanical planarization using copper coordinating ligands |
JP3094392B2 (ja) | 1997-12-10 | 2000-10-03 | 株式会社荏原電産 | エッチング液 |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
US6896825B1 (en) * | 1998-08-31 | 2005-05-24 | Hitachi Chemical Company, Ltd | Abrasive liquid for metal and method for polishing |
US6274063B1 (en) | 1998-11-06 | 2001-08-14 | Hmt Technology Corporation | Metal polishing composition |
US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
JP3912927B2 (ja) * | 1999-05-10 | 2007-05-09 | 花王株式会社 | 研磨液組成物 |
DE19927286B4 (de) | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche |
JP4614497B2 (ja) * | 1999-07-13 | 2011-01-19 | 花王株式会社 | 研磨液組成物 |
JP2001144047A (ja) * | 1999-11-12 | 2001-05-25 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US20020111027A1 (en) | 1999-12-14 | 2002-08-15 | Vikas Sachan | Polishing compositions for noble metals |
JP2001187877A (ja) * | 1999-12-28 | 2001-07-10 | Nec Corp | 化学的機械的研磨用スラリー |
-
2000
- 2000-08-10 AT AT00952726T patent/ATE292167T1/de not_active IP Right Cessation
- 2000-08-10 CN CNB008116377A patent/CN100368496C/zh not_active Expired - Lifetime
- 2000-08-10 CA CA002378790A patent/CA2378790A1/en not_active Abandoned
- 2000-08-10 JP JP2001517629A patent/JP4188598B2/ja not_active Expired - Lifetime
- 2000-08-10 AT AT00953960T patent/ATE360051T1/de not_active IP Right Cessation
- 2000-08-10 EP EP00953960A patent/EP1226220B1/de not_active Expired - Lifetime
- 2000-08-10 CN CNB008116393A patent/CN100335580C/zh not_active Expired - Lifetime
- 2000-08-10 EP EP00952726A patent/EP1218465B1/de not_active Expired - Lifetime
- 2000-08-10 IL IL14723400A patent/IL147234A0/xx unknown
- 2000-08-10 KR KR1020027001011A patent/KR100590666B1/ko active IP Right Grant
- 2000-08-10 JP JP2001517628A patent/JP4391715B2/ja not_active Expired - Lifetime
- 2000-08-10 WO PCT/US2000/021938 patent/WO2001012740A1/en active IP Right Grant
- 2000-08-10 DE DE60019142T patent/DE60019142T2/de not_active Expired - Lifetime
- 2000-08-10 WO PCT/US2000/021952 patent/WO2001012741A1/en active IP Right Grant
- 2000-08-10 DE DE60034474T patent/DE60034474T2/de not_active Expired - Lifetime
- 2000-08-10 KR KR1020027001010A patent/KR100590664B1/ko active IP Right Grant
- 2000-08-10 AU AU65370/00A patent/AU6537000A/en not_active Abandoned
- 2000-08-10 AU AU66321/00A patent/AU6632100A/en not_active Abandoned
- 2000-08-10 IL IL14723600A patent/IL147236A0/xx unknown
- 2000-08-10 CA CA002378793A patent/CA2378793A1/en not_active Abandoned
- 2000-08-10 EP EP07005350.9A patent/EP1811005B1/de not_active Expired - Lifetime
- 2000-08-11 MY MYPI20003665A patent/MY139997A/en unknown
- 2000-08-11 TW TW089116251A patent/TW570965B/zh not_active IP Right Cessation
- 2000-08-11 TW TW089116226A patent/TW500784B/zh not_active IP Right Cessation
- 2000-08-11 MY MYPI20003660A patent/MY129591A/en unknown
-
2002
- 2002-11-04 HK HK02108003.6A patent/HK1046423A1/zh unknown
- 2002-11-04 HK HK02108002.7A patent/HK1046422A1/zh unknown
-
2003
- 2003-01-29 US US10/353,542 patent/US6852632B2/en not_active Expired - Lifetime
-
2005
- 2005-12-02 JP JP2005349782A patent/JP4851174B2/ja not_active Expired - Lifetime
-
2006
- 2006-04-05 JP JP2006104616A patent/JP4723409B2/ja not_active Expired - Lifetime
-
2009
- 2009-04-21 JP JP2009102674A patent/JP5384994B2/ja not_active Expired - Lifetime
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE360051T1 (de) | Poliersystem und verfahren zu seiner verwendung | |
ATE247700T1 (de) | Suspension zum chemisch-mechanischen polieren mit fluorierten additiven und verfahren zur benutzung dieser suspension | |
DE60307111D1 (de) | Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten | |
DE60020389D1 (de) | Verfahren und vorrichtung zum planarisieren von mikroelektronischem substratenaufbau | |
TW200513521A (en) | Method and composition for polishing a substrate | |
WO2000028586A3 (en) | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad | |
DE60321154D1 (de) | Beschichteter schleifgegenstand, verfahren zur herstellung desselben und verfahren zum schleifen eines werkstücks | |
DE60314274D1 (de) | Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden | |
JP6646051B2 (ja) | コバルト研磨促進剤 | |
ATE320881T1 (de) | Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür | |
ATE258577T1 (de) | Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen | |
DE69817143D1 (de) | Schleifmittel und verfahren zum polieren von halbleitersubstraten | |
JP2018500456A5 (de) | ||
ATE200104T1 (de) | Verfahren zur korrosionsinhibierung in wässrigen systemen | |
MY134021A (en) | Alkali metal-containing polishing system and method | |
ATE397055T1 (de) | Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms | |
WO2004072199A3 (en) | Mixed-abrasive polishing composition and method for using the same | |
DE60023549D1 (de) | Verfahren zum polieren oder planarisieren eines substrats | |
EP0454362A3 (en) | Backing pad, method for precision surface machining thereof, and method for polishing semiconductor wafer by use of the backing pad | |
DE69833847D1 (de) | Verfahren zum Entfernen von Teilchen und Flüssigkeit von der Oberfläche eines Substrats | |
WO2002020214A3 (en) | Method for polishing a memory or rigid disk with a polishing composition containing an oxidized halide and an acid | |
EP0858102A3 (de) | Verfahren zur Behandlung einer Substratoberfläche und Behandlungsmittel hierfür | |
ATE131151T1 (de) | Zusammensetzung und verfahren zur korrosionsinhibierung und/oder haftvermittlung von metalloberflächen. | |
TH49171A (th) | ระบบขัดมันและวิธีในการใช้ระบบนี้ | |
DE69330465D1 (de) | Verfahren zur behandlung von chronischer prostatitis mit 17-beta-n-tertbutylcarbamoyl-4-aza-5 alpha-androst-1-en-3-one |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |