DE60314274D1 - Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden - Google Patents

Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden

Info

Publication number
DE60314274D1
DE60314274D1 DE60314274T DE60314274T DE60314274D1 DE 60314274 D1 DE60314274 D1 DE 60314274D1 DE 60314274 T DE60314274 T DE 60314274T DE 60314274 T DE60314274 T DE 60314274T DE 60314274 D1 DE60314274 D1 DE 60314274D1
Authority
DE
Germany
Prior art keywords
metal layer
substrate
polishing
cmp
nontructive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60314274T
Other languages
English (en)
Other versions
DE60314274T2 (de
Inventor
David J Schroeder
Kevin J Moeggenborg
Homer Chou
Jeffrey P Chamberlain
Joseph D Hawkins
Phillip W Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of DE60314274D1 publication Critical patent/DE60314274D1/de
Publication of DE60314274T2 publication Critical patent/DE60314274T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Cosmetics (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
DE60314274T 2002-10-11 2003-09-29 Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden Expired - Lifetime DE60314274T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US269864 1981-06-03
US10/269,864 US6936543B2 (en) 2002-06-07 2002-10-11 CMP method utilizing amphiphilic nonionic surfactants
PCT/IB2003/004296 WO2004033574A1 (en) 2002-10-11 2003-09-29 Cmp method utilizing amphiphilic non-ionic surfactants

Publications (2)

Publication Number Publication Date
DE60314274D1 true DE60314274D1 (de) 2007-07-19
DE60314274T2 DE60314274T2 (de) 2007-09-20

Family

ID=32092437

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60314274T Expired - Lifetime DE60314274T2 (de) 2002-10-11 2003-09-29 Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden

Country Status (11)

Country Link
US (1) US6936543B2 (de)
EP (1) EP1560890B1 (de)
JP (3) JP2006502579A (de)
KR (2) KR20050070048A (de)
CN (1) CN100352874C (de)
AT (1) ATE364070T1 (de)
AU (1) AU2003263536A1 (de)
DE (1) DE60314274T2 (de)
SG (1) SG111616A1 (de)
TW (1) TWI259845B (de)
WO (1) WO2004033574A1 (de)

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SG111616A1 (en) 2007-05-30
CN100352874C (zh) 2007-12-05
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ATE364070T1 (de) 2007-06-15
WO2004033574A1 (en) 2004-04-22
JP5964795B2 (ja) 2016-08-03
EP1560890B1 (de) 2007-06-06
EP1560890A1 (de) 2005-08-10
TWI259845B (en) 2006-08-11
DE60314274T2 (de) 2007-09-20
AU2003263536A1 (en) 2004-05-04
JP5448994B2 (ja) 2014-03-19
KR20050070048A (ko) 2005-07-05
US20030228763A1 (en) 2003-12-11
JP2013258430A (ja) 2013-12-26
TW200420697A (en) 2004-10-16
WO2004033574A8 (en) 2005-09-29
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CN1688665A (zh) 2005-10-26
US6936543B2 (en) 2005-08-30
JP2006502579A (ja) 2006-01-19
KR20110008342A (ko) 2011-01-26

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