ATE364070T1 - Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden - Google Patents
Cmp verfahren unter verwendung von amphiphilen nichtionischen tensidenInfo
- Publication number
- ATE364070T1 ATE364070T1 AT03807926T AT03807926T ATE364070T1 AT E364070 T1 ATE364070 T1 AT E364070T1 AT 03807926 T AT03807926 T AT 03807926T AT 03807926 T AT03807926 T AT 03807926T AT E364070 T1 ATE364070 T1 AT E364070T1
- Authority
- AT
- Austria
- Prior art keywords
- metal layer
- substrate
- polishing
- abrasive
- amphiphil
- Prior art date
Links
- 239000002736 nonionic surfactant Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 7
- 229910052751 metal Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 3
- 238000005498 polishing Methods 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Cosmetics (AREA)
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/269,864 US6936543B2 (en) | 2002-06-07 | 2002-10-11 | CMP method utilizing amphiphilic nonionic surfactants |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE364070T1 true ATE364070T1 (de) | 2007-06-15 |
Family
ID=32092437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03807926T ATE364070T1 (de) | 2002-10-11 | 2003-09-29 | Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden |
Country Status (11)
Country | Link |
---|---|
US (1) | US6936543B2 (de) |
EP (1) | EP1560890B1 (de) |
JP (3) | JP2006502579A (de) |
KR (2) | KR101201115B1 (de) |
CN (1) | CN100352874C (de) |
AT (1) | ATE364070T1 (de) |
AU (1) | AU2003263536A1 (de) |
DE (1) | DE60314274T2 (de) |
SG (1) | SG111616A1 (de) |
TW (1) | TWI259845B (de) |
WO (1) | WO2004033574A1 (de) |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US7348300B2 (en) * | 1999-05-04 | 2008-03-25 | Air Products And Chemicals, Inc. | Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture |
US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
US6953389B2 (en) | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
TW591089B (en) | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
TWI256971B (en) * | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
US20060042502A1 (en) * | 2002-10-31 | 2006-03-02 | Showa Denko K.K. | Composition for polishing metal, polishing metod for metal layer, and production method for wafer |
US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US7553345B2 (en) * | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
JP2004247605A (ja) * | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
JP4152218B2 (ja) * | 2003-02-25 | 2008-09-17 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US7407601B2 (en) * | 2003-04-24 | 2008-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Polymeric particle slurry system and method to reduce feature sidewall erosion |
US7387970B2 (en) * | 2003-05-07 | 2008-06-17 | Freescale Semiconductor, Inc. | Method of using an aqueous solution and composition thereof |
DE10320854A1 (de) * | 2003-05-09 | 2004-12-09 | Degussa Ag | Dispersion zum chemisch-mechanischen Polieren |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US7232478B2 (en) | 2003-07-14 | 2007-06-19 | Enthone Inc. | Adhesion promotion in printed circuit boards |
JP4296051B2 (ja) * | 2003-07-23 | 2009-07-15 | 株式会社リコー | 半導体集積回路装置 |
JP4707311B2 (ja) * | 2003-08-08 | 2011-06-22 | 花王株式会社 | 磁気ディスク用基板 |
US20050076579A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Bicine/tricine containing composition and method for chemical-mechanical planarization |
US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
JP4801326B2 (ja) * | 2004-05-06 | 2011-10-26 | 三井化学株式会社 | 研磨用スラリー |
TWI282801B (en) * | 2004-05-06 | 2007-06-21 | Mitsui Chemicals Inc | Slurry for polishing use |
US20050279964A1 (en) * | 2004-06-17 | 2005-12-22 | Ming-Tseh Tsay | Chemical mechanical polishing slurry for polishing copper layer on a wafer |
EP1609847B1 (de) * | 2004-06-25 | 2007-03-21 | JSR Corporation | Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts |
JP2006016438A (ja) * | 2004-06-30 | 2006-01-19 | Dongwoo Fine-Chem Co Ltd | 電子部品洗浄液 |
US7390748B2 (en) * | 2004-08-05 | 2008-06-24 | International Business Machines Corporation | Method of forming a polishing inhibiting layer using a slurry having an additive |
US7037175B1 (en) * | 2004-10-19 | 2006-05-02 | Cabot Microelectronics Corporation | Method of sharpening cutting edges |
US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
KR100663357B1 (ko) * | 2005-02-22 | 2007-01-02 | 삼성전자주식회사 | 금속 질화막 패턴을 갖는 트랜지스터의 형성방법들 |
WO2006125462A1 (en) * | 2005-05-25 | 2006-11-30 | Freescale Semiconductor, Inc | Cleaning solution for a semiconductor wafer |
US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
DE102005049249B4 (de) * | 2005-10-14 | 2018-03-29 | MTU Aero Engines AG | Verfahren zur Entschichtung eines Gasturbinenbauteils |
US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
US20070123624A1 (en) * | 2005-11-30 | 2007-05-31 | Otten Jay G | Method of drying an absorbent polymer with a surfactant |
JP2007184395A (ja) * | 2006-01-06 | 2007-07-19 | Fujifilm Corp | 金属用研磨液 |
JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
US20100273330A1 (en) * | 2006-08-23 | 2010-10-28 | Citibank N.A. As Collateral Agent | Rinse formulation for use in the manufacture of an integrated circuit |
KR100814416B1 (ko) * | 2006-09-28 | 2008-03-18 | 삼성전자주식회사 | 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법 |
CN101589135B (zh) * | 2006-10-06 | 2014-04-02 | 瓦里石化有限责任公司 | 一种分离组合物及其使用方法 |
US8062512B2 (en) * | 2006-10-06 | 2011-11-22 | Vary Petrochem, Llc | Processes for bitumen separation |
US7758746B2 (en) * | 2006-10-06 | 2010-07-20 | Vary Petrochem, Llc | Separating compositions and methods of use |
US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
US7456107B2 (en) * | 2006-11-09 | 2008-11-25 | Cabot Microelectronics Corporation | Compositions and methods for CMP of low-k-dielectric materials |
US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
JP5428200B2 (ja) * | 2007-05-18 | 2014-02-26 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液、半導体デバイス用基板の洗浄方法及び半導体デバイス用基板の製造方法 |
US20090056744A1 (en) * | 2007-08-29 | 2009-03-05 | Micron Technology, Inc. | Wafer cleaning compositions and methods |
US20090061630A1 (en) * | 2007-08-30 | 2009-03-05 | Dupont Air Products Nanomaterials Llc | Method for Chemical Mechanical Planarization of A Metal-containing Substrate |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
KR100949250B1 (ko) * | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | 금속 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
JP5469809B2 (ja) * | 2007-12-26 | 2014-04-16 | 花王株式会社 | 研磨液組成物 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP2009164186A (ja) | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
JP5444625B2 (ja) * | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | Cmp研磨液、基板の研磨方法及び電子部品 |
US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
JP5202258B2 (ja) * | 2008-03-25 | 2013-06-05 | 富士フイルム株式会社 | 金属研磨用組成物、及び化学的機械的研磨方法 |
TWI393181B (zh) * | 2008-07-02 | 2013-04-11 | Anji Microelectronics Co Ltd | 用於阻擋層之化學機械拋光液 |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
US20100081279A1 (en) * | 2008-09-30 | 2010-04-01 | Dupont Air Products Nanomaterials Llc | Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
US8088690B2 (en) * | 2009-03-31 | 2012-01-03 | International Business Machines Corporation | CMP method |
TWI410481B (zh) * | 2009-04-22 | 2013-10-01 | Lg Chemical Ltd | 化學機械研磨用漿料 |
SG177327A1 (en) | 2009-06-22 | 2012-02-28 | Cabot Microelectronics Corp | Cmp compositions and methods for suppressing polysilicon removal rates |
US8765653B2 (en) * | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
JP2011110637A (ja) * | 2009-11-25 | 2011-06-09 | Asahi Glass Co Ltd | 磁気ディスク用ガラス基板の製造方法 |
US8916473B2 (en) | 2009-12-14 | 2014-12-23 | Air Products And Chemicals, Inc. | Method for forming through-base wafer vias for fabrication of stacked devices |
US8551887B2 (en) * | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
WO2011090757A2 (en) * | 2009-12-29 | 2011-07-28 | Saint-Gobain Abrasifs | Durable coated abrasive article |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP5877940B2 (ja) * | 2010-04-08 | 2016-03-08 | 株式会社フジミインコーポレーテッド | 銅及びシリコンが表面に露出したウェーハの研磨方法 |
JP6101421B2 (ja) * | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
US9496146B2 (en) | 2011-03-11 | 2016-11-15 | Basf Se | Method for forming through-base wafer vias |
JP5875300B2 (ja) * | 2011-09-06 | 2016-03-02 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
JP5797981B2 (ja) * | 2011-09-06 | 2015-10-21 | 東洋ゴム工業株式会社 | 研磨パッド |
CN102604542A (zh) * | 2012-02-21 | 2012-07-25 | 复旦大学 | 基于铜互连中以金属钌作为粘附阻挡层的抛光工艺的抛光液 |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
US20140011362A1 (en) * | 2012-07-06 | 2014-01-09 | Basf Se | Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
EP2682441A1 (de) * | 2012-07-06 | 2014-01-08 | Basf Se | Chemisch-mechanische Polierzusammensetzung mit einem nicht ionischen Tensid und einer Aromaverbindung mit mindestens einer Säuregruppe |
US9633863B2 (en) | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
CN105143390B (zh) | 2013-04-17 | 2019-08-13 | 三星Sdi株式会社 | 有机膜化学机械研磨浆料组成物及使用其的研磨方法 |
EP3019569B1 (de) * | 2013-07-11 | 2018-05-30 | Basf Se | Zusammensetzung für chemisch-mechanisches polieren mit benzotriazolderivaten als korrosionsinhibitoren |
JP2016175949A (ja) * | 2013-08-09 | 2016-10-06 | コニカミノルタ株式会社 | Cmp用研磨液 |
EP3209815B1 (de) * | 2014-10-21 | 2021-12-29 | CMC Materials, Inc. | Korrosionshemmer sowie entsprechende zusammensetzungen und verfahren |
CN104479559B (zh) * | 2014-12-10 | 2016-09-21 | 深圳市力合材料有限公司 | 一种适用于晶片边缘抛光的组合物及其制备方法 |
US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
US9978609B2 (en) * | 2015-04-27 | 2018-05-22 | Versum Materials Us, Llc | Low dishing copper chemical mechanical planarization |
KR101682085B1 (ko) | 2015-07-09 | 2016-12-02 | 주식회사 케이씨텍 | 텅스텐 연마용 슬러리 조성물 |
US10066127B2 (en) * | 2016-07-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Composition for chemical mechanical polishing and method for reducing chemical mechanical polishing surface defects |
US10876060B2 (en) | 2016-11-29 | 2020-12-29 | Kamterter Products, Llc | Droplet for fuels |
US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
WO2020120641A1 (en) * | 2018-12-12 | 2020-06-18 | Basf Se | Chemical mechanical polishing of substrates containing copper and ruthenium |
WO2021061510A1 (en) * | 2019-09-24 | 2021-04-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
WO2021162978A1 (en) * | 2020-02-13 | 2021-08-19 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
CN114945649B (zh) * | 2020-02-13 | 2024-05-07 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
JPWO2022070801A1 (de) * | 2020-09-29 | 2022-04-07 | ||
CN115595585A (zh) * | 2022-11-10 | 2023-01-13 | 江西省科学院应用物理研究所(Cn) | 一种易氧化金属专用金相抛光剂的制备方法 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752628A (en) | 1987-05-15 | 1988-06-21 | Nalco Chemical Company | Concentrated lapping slurries |
JPS6487146A (en) * | 1987-09-22 | 1989-03-31 | Lion Corp | Dispersant for polishing agent |
US4867757A (en) | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
US5123958A (en) | 1990-05-25 | 1992-06-23 | Wiand Ronald C | Polishing composition and method |
JPH04291724A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハーの研摩方法 |
JPH04291722A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー表面のヘイズ防止方法 |
AU648704B2 (en) | 1991-11-25 | 1994-04-28 | National Starch And Chemical Investment Holding Corporation | Method of extruding starch under low moisture conditions using feed starch having coarse particle size |
TW274625B (de) | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5860848A (en) | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
KR100336598B1 (ko) | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | 산화 세륨 연마제 제조용 산화 세륨 입자 |
ES2160892T3 (es) * | 1996-05-30 | 2001-11-16 | Nalco Chemical Co | Uso de una mezcla de tensioactivos para inhibir la corrosion. |
US6117783A (en) | 1996-07-25 | 2000-09-12 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US6153525A (en) | 1997-03-13 | 2000-11-28 | Alliedsignal Inc. | Methods for chemical mechanical polish of organic polymer dielectric films |
US6126532A (en) | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
CN1258241A (zh) | 1997-04-18 | 2000-06-28 | 卡伯特公司 | 用于半导体底物的抛光垫 |
US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属cmpにおける研磨用組成物および研磨方法 |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
JP2000015560A (ja) * | 1998-06-30 | 2000-01-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリーおよびその製造方法 |
US6117000A (en) | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
TW455626B (en) | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
US6270395B1 (en) | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
JP2000109816A (ja) | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
WO2000030154A2 (en) * | 1998-11-16 | 2000-05-25 | Rodel Holdings, Inc. | Method to control film removal rates for improved polishing in metal cmp |
SG78405A1 (en) | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
US6046112A (en) | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
EP1566421B1 (de) * | 1998-12-25 | 2014-12-10 | Hitachi Chemical Company, Ltd. | CMP Poliermittel, flüssiger Zusatz für CMP Poliermittel und Verfahren zum Polieren eines Substrates |
JP4866503B2 (ja) * | 1998-12-28 | 2012-02-01 | 日立化成工業株式会社 | 金属用研磨液材料及び金属用研磨液 |
JP4816836B2 (ja) * | 1998-12-28 | 2011-11-16 | 日立化成工業株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
KR100472882B1 (ko) | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법 |
US6426295B1 (en) | 1999-02-16 | 2002-07-30 | Micron Technology, Inc. | Reduction of surface roughness during chemical mechanical planarization(CMP) |
US20010013507A1 (en) | 1999-02-18 | 2001-08-16 | Hosali Sharath D. | Method for CMP of low dielectric constant polymer layers |
WO2000049647A1 (en) * | 1999-02-18 | 2000-08-24 | Rodel Holdings, Inc. | Method for cmp of low dielectric constant polymer layers |
KR100447552B1 (ko) * | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
JP4171858B2 (ja) * | 1999-06-23 | 2008-10-29 | Jsr株式会社 | 研磨用組成物および研磨方法 |
KR20020035826A (ko) * | 1999-07-03 | 2002-05-15 | 갤반 마틴 | 금속용의 개선된 화학기계적 연마 슬러리 |
US20010054706A1 (en) * | 1999-07-19 | 2001-12-27 | Joseph A. Levert | Compositions and processes for spin etch planarization |
EP1210395B1 (de) * | 1999-08-24 | 2003-10-22 | Rodel Holdings, Inc. | Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen |
US6376381B1 (en) | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
TW499471B (en) | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
JP4075247B2 (ja) * | 1999-09-30 | 2008-04-16 | Jsr株式会社 | 化学機械研磨用水系分散体 |
US6348076B1 (en) | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
US6503418B2 (en) * | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
KR100444239B1 (ko) * | 1999-11-22 | 2004-08-11 | 제이에스알 가부시끼가이샤 | 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법 |
JP2001223216A (ja) * | 1999-12-01 | 2001-08-17 | Tokuyama Corp | 半導体装置の製造方法 |
CN1408124A (zh) * | 1999-12-07 | 2003-04-02 | 卡伯特微电子公司 | 化学-机械抛光方法 |
JP3841995B2 (ja) | 1999-12-28 | 2006-11-08 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP3490038B2 (ja) | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
TW572980B (en) | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
EP1118647A1 (de) * | 2000-01-18 | 2001-07-25 | Praxair S.T. Technology, Inc. | Polieraufschlämmung |
JP2001269859A (ja) | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
TW574343B (en) | 2000-06-27 | 2004-02-01 | Sumitomo Chemical Co | Method of producing aluminate fluorescent substance, a fluorescent substance and a device containing a fluorescent substance |
US6468913B1 (en) * | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
KR100481651B1 (ko) | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
JP3768401B2 (ja) | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP4009986B2 (ja) | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
JP3849091B2 (ja) * | 2001-02-28 | 2006-11-22 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP2003173990A (ja) * | 2001-12-07 | 2003-06-20 | Asahi Kasei Corp | 半導体基板の製造方法 |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
-
2002
- 2002-10-11 US US10/269,864 patent/US6936543B2/en not_active Expired - Lifetime
-
2003
- 2003-09-29 KR KR1020107029880A patent/KR101201115B1/ko active IP Right Grant
- 2003-09-29 EP EP03807926A patent/EP1560890B1/de not_active Expired - Lifetime
- 2003-09-29 DE DE60314274T patent/DE60314274T2/de not_active Expired - Lifetime
- 2003-09-29 AT AT03807926T patent/ATE364070T1/de not_active IP Right Cessation
- 2003-09-29 KR KR1020057006220A patent/KR20050070048A/ko not_active Application Discontinuation
- 2003-09-29 AU AU2003263536A patent/AU2003263536A1/en not_active Abandoned
- 2003-09-29 WO PCT/IB2003/004296 patent/WO2004033574A1/en active IP Right Grant
- 2003-09-29 SG SG2005021365A patent/SG111616A1/en unknown
- 2003-09-29 JP JP2004542717A patent/JP2006502579A/ja not_active Withdrawn
- 2003-09-29 CN CNB038240653A patent/CN100352874C/zh not_active Expired - Fee Related
- 2003-10-09 TW TW092128150A patent/TWI259845B/zh not_active IP Right Cessation
-
2010
- 2010-04-15 JP JP2010094057A patent/JP5448994B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-17 JP JP2013191654A patent/JP5964795B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP5448994B2 (ja) | 2014-03-19 |
DE60314274D1 (de) | 2007-07-19 |
KR101201115B1 (ko) | 2012-11-13 |
CN100352874C (zh) | 2007-12-05 |
CN1688665A (zh) | 2005-10-26 |
DE60314274T2 (de) | 2007-09-20 |
TW200420697A (en) | 2004-10-16 |
US20030228763A1 (en) | 2003-12-11 |
JP2006502579A (ja) | 2006-01-19 |
KR20110008342A (ko) | 2011-01-26 |
TWI259845B (en) | 2006-08-11 |
AU2003263536A8 (en) | 2004-05-04 |
EP1560890A1 (de) | 2005-08-10 |
US6936543B2 (en) | 2005-08-30 |
SG111616A1 (en) | 2007-05-30 |
JP5964795B2 (ja) | 2016-08-03 |
JP2010177703A (ja) | 2010-08-12 |
KR20050070048A (ko) | 2005-07-05 |
WO2004033574A1 (en) | 2004-04-22 |
JP2013258430A (ja) | 2013-12-26 |
AU2003263536A1 (en) | 2004-05-04 |
EP1560890B1 (de) | 2007-06-06 |
WO2004033574A8 (en) | 2005-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE364070T1 (de) | Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden | |
DE60307111D1 (de) | Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten | |
DE602005012546D1 (de) | Cmp-zusammensetzung mit einem tensid | |
WO2002044293A3 (en) | Method and composition for the removal of residual materials during substrate planarization | |
WO2004013242A3 (en) | Polishing slurry system and metal poslishing and removal process | |
ATE333343T1 (de) | Verfahren zum reinigen eines chemisch- mechanischen polierkissens | |
TW200624527A (en) | A cmp composition with a polymer additive for polishing noble metals | |
MY149727A (en) | Methods and compositions for polishing silicon-containing substrates | |
ATE320881T1 (de) | Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür | |
MY126250A (en) | Rare earth salt/oxidizer-based cmp method | |
Fury | Emerging developments in CMP for semiconductor planarization | |
ATE397055T1 (de) | Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms | |
ATE445034T1 (de) | Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür | |
US20020104764A1 (en) | Electropolishing and chemical mechanical planarization | |
JP2005534516A (ja) | ウエハ材の研磨方法 | |
WO2004009289A8 (en) | Rising after chemical-mechanical planarization process applied on a wafer | |
Nguyen et al. | Copper chemical mechanical polishing using a slurry-free technique | |
WO2006009634A1 (en) | Continuous contour polishing of a multi-material surface | |
Bernard et al. | Influence of surfactant and salts on chemical mechanical planarisation of copper | |
Brightup et al. | Chemical-mechanical polishing for III-V wafer bonding applications: polishing, roughness, and an abrasive-free polishing model | |
US20010029155A1 (en) | Multi-step conditioning process | |
Sivaram et al. | Chemical mechanical polishing of interlevel dielectrics: Models for removal rate and planarity | |
US20070161332A1 (en) | Systems and methods for removing microfeature workpiece surface defects | |
Toh et al. | Fabrication of YAG ceramics surface without damage and grain boundary steps using catalyzed chemical wet etching | |
EP1125688A4 (de) | Poliervorrichtung und halbleiter-herstellungsverfahren unter verwendung desselben |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |