US20020104764A1 - Electropolishing and chemical mechanical planarization - Google Patents

Electropolishing and chemical mechanical planarization Download PDF

Info

Publication number
US20020104764A1
US20020104764A1 US09989338 US98933801A US2002104764A1 US 20020104764 A1 US20020104764 A1 US 20020104764A1 US 09989338 US09989338 US 09989338 US 98933801 A US98933801 A US 98933801A US 2002104764 A1 US2002104764 A1 US 2002104764A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
substrate
electropolishing
polishing
polishing pad
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09989338
Inventor
Gautam Banerjee
Lee Cook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/30Polishing of semiconducting materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Abstract

Removing metal from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad.

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • This application claims the benefit of provisional application serial No. 60/249,995 filed Nov. 20, 2000.[0001]
  • FIELD OF THE INVENTION
  • The invention relates to a method for planarization of a substrate by a combination of electropolishing and chemical mechanical planarization, CMP. [0002]
  • BACKGROUND OF THE INVENTION
  • A semiconductor substrate comprises, a silicon wafer on which is deposited successive layers of materials. A dielectric layer is deposited, and is provided with multiple trenches that are recessed in the dielectric layer. A thin barrier film, for example, tantalum, tantalum nitride or a tantalum alloy, is deposited to cover the surface of the dielectric layer including the trenches, which provides a barrier to migration of metal ions into the dielectric layer. A metal layer is deposited to fill the trenches with metal to provide electrical circuit interconnects in the trenches. [0003]
  • During a CMP operation, the substrate is polished by a rotating polishing pad and a polishing fluid at an interface of the substrate and the polishing pad. The polishing operation removes metal by a combination of, abrasion applied by the polishing pad, and chemical reaction of the metal with the polishing fluid. [0004]
  • A single step polishing operation, or two step polishing operations, may be performed to provide complete removal of the metal layer, and complete removal of the barrier film, without spots of residual metal on the polished surface, while leaving all of the trenches filled with metal at a level that is planar with the smooth planar polished surface. [0005]
  • U.S. Pat. No. 6,056,864 discloses removing metal from a metal layer on a semiconductor substrate by dissolving ions of the metal into an electopolishing electrolyte, followed by performing CMP to remove a remaining thickness of metal. A faster rate of removal of the metal is attained as compared to that attained solely by performing CMP. [0006]
  • SUMMARY OF THE INVENTION
  • According to the invention, metal is removed from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad. [0007]
  • According to an embodiment of the invention, an apparatus comprises both an electropolishing apparatus and a CMP apparatus. Further according to an embodiment of the invention, an electropolishing electrolyte comprises a CMP polishing composition. [0008]
  • According to an embodiment of the invention, performance of both electropolishing and CMP on the same apparatus leads to a significant reduction in processing time per substrate.[0009]
  • Embodiments of the invention will now be described by way of example with reference to the accompanying drawings, according to which; [0010]
  • DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross section view of a portion of a semiconductor substrate having a dielectric layer provided with multiple trenches, one of which is shown; [0011]
  • FIG. 2 is a view similar to FIG. 1 with the substrate having a deposited metal layer to fill each of the trenches with metal; [0012]
  • FIG. 3 is a view similar to FIG. 2 with a reduced thickness of the metal layer obtained by electropolishing; [0013]
  • FIG. 4 is a view similar to FIG. 3 with complete removal of the metal layer from a polished surface and a metal filled trench with a surface planar with the polished surface; [0014]
  • FIG. 5 is a diagrammatic view of an electropolishing apparatus; [0015]
  • FIG. 6 is a diagrammatic view of an apparatus that is both an electropolishing apparatus and a CMP apparatus; [0016]
  • FIG. 7 is a graph of weight loss of copper metal versus time of electropolishing with an electropolishing electrolyte comprising a CMP slurry; and [0017]
  • FIG. 8 is a graph of removed thickness of copper metal versus time of electropolishing with an electropolishing electrolyte comprising a CMP slurry.[0018]
  • DETAILED DESCRIPTION
  • FIG. 1 discloses a trench [0019] 10 that is etched or otherwise formed in a dielectric layer 11, typically SiO2. The trench is then coated with an adhesion or barrier layer 12, as shown in FIG. 2, followed by a metal layer 13 which fills the trench 10 with metal. FIG. 3 discloses a reduced thickness 14 of the metal layer 13 obtained by electropolishing FIG. 5 discloses an electropolishing apparatus 20 according to which multiple substrates 22 are placed in a tank 24 filled with electrolyte 26. The substrates 22 are connected to the positive side of a DC voltage source 28 so that the wafers act as anodes. The negative side of the DC voltage source 28 is connected to a chemically inert electrode 30 that acts as a cathode. The voltage source 28 applies a DC voltage across the anodes and the cathode. A DC electrical current flows through the electrolyte, causing removal of ions of the metal from the substrates 22 and into solution with the electrolyte. The DC voltage source 28 produces the required current density for the metal layer to be reduced in thickness faster than by performing CMP. The electropolishing apparatus 20 is incapable of providing a planar polished surface on the substrates 22. Accordingly, the substrates 22 are removed from the electropolishing apparatus 20, and the polished surface is provided on a CMP apparatus, not shown. Because removal and transfer of the substrates 22 consumes time, the processing time for each substrate 22 is extended.
  • FIG. 6 discloses an apparatus that comprises both an electropolishing apparatus and a CMP apparatus. Each semiconductor substrate [0020] 22 that is mounted to the apparatus for electropolishing and CMP, serves as an anode by having a conducting portion thereof being connected to a positive side of a DC voltage source 28. A cathode is provided by a conducting portion of a polishing pad 30 connected to a negative side of the DC voltage source 28. Electrolyte 26 is applied by a dispenser 27 at the interface of the substrate and the polishing pad 30. The substrate 22 is held by an electrically insulating holder, and is positioned in close proximity to the conducting portion of the polishing pad 30, while maintaining adequate separation between the same to allow for electrolyte flow. A voltage applied by the voltage source 28 generates a current flow through the known electropolishing electrolyte, which causes the metal of the metal layer on each respective substrate to dissolve in the electrolyte. An advantage of the invention is that, the polishing pad 30 itself will pool the electrolyte about the substrate 22 without requiring immersion in a tank, such as, the tank 24. Electropolishing is performed until substantial reduction of the thickness 24 of the metal layer 15 is attained for each substrate 22 being polished. The removal rate of the metal layer 15 is faster than that resulting from CMP, even while the apparatus of FIG. 6 is not operating to perform CMP during electropolishing.
  • The removal rate of the metal layer [0021] 15 is faster while the apparatus of FIG. 6, according to another embodiment thereof, performs CMP during electropolishing.
  • According to another embodiment of the apparatus disclosed by FIG. 6, a nonconducting portion of the polishing pad [0022] 30 contacts the substrate, especially when the nonconducting portion is a polishing surface of the polishing pad 30, which spaces the conducting portion of the polishing pad 30 away from the substrate 22. According to an embodiment, the conducting portion of the polishing pad 30 is recessed away from the polishing surface, and is spaced away from the substrate 22 in contact with the polishing surface. A further embodiment of the electrolyte comprises a chemical composition for performance of CMP, as well as, for performance of electropolishing. The removal rate of the metal layer 15 is faster than that resulting from CMP solely. Further, by combining both electropolishing and CMP, the removal rate of the metal layer 15 is faster than that resulting from either electropolishing solely or CMP solely.
  • When a substantial reduction in thickness [0023] 14 is attained, the apparatus of FIG. 6 operates solely to perform CMP. Metal is removed by abrasion applied by the polishing pad and by chemical reaction with the electrolyte that comprises a CMP polishing composition. Although the removal rate of the metal decreases, the CMP operation without electropolishing provides a smooth, planar polished surface on the substrate that is unattainable by performing electropolishing. Further, the removal rate of metal by electropolishing tends to cause dishing, which refers to unwanted recesses in the metal in the trenches, which are considered as damage to the circuit interconnects. Thus performing CMP without electropolishing obtain complete removal of the metal layer 15, with minimized dishing.
  • CMP without electropolishing is performed by having the DC voltage source turned off. Alternatively, the DC voltage source is reversible in polarity. By performing CMP with the DC voltage source providing a voltage of reversed polarity relative to electropolishing, the current direction is reversed relative to electropolishing, which clears away charged contaminants from the metal layer [0024] 15 during CMP. Any metal ions that tend to plate onto the metal layer 15 are removed by CMP.
  • CMP is then performed in the presence of the applied electrical field at a downforce of up to about 10 psi to obtain a planar surface. The applied voltage difference will be of such low magnitude as to prevent local hot spots and corrosion on the substrate surface. [0025]
  • According to an embodiment of the invention, CMP is performed simultaneously with electropolishing, when an electropolishing electrolyte further comprises a CMP polishing compositon. A CMP polishing composition comprises, a metal complexing agent, a metal oxidizing agent and/or a metal corrosion inhibitor. The use of conventional CMP polishing compositions reduces cross-contamination on the tool and the need for multiple rinsing steps. Further, the electrolyte comprising the polishing composition will perform for both electropolishing and CMP. The invention significantly reduces waste and cross contamination when the same apparatus performs electropolishing and CMP. [0026]
  • A CMP polishing composition may or may not have abrasive particles, oxidizing agents, complexing agents, pH buffers, surfactants and dispersants. Examples of abrasive particles include but are not limited to ceria, alumina, silica, titania, germania, zirconia, diamond, silicon carbide and combinations thereof. [0027]
  • Exemplary complexing agents comprise, mono- and dicarboxylic aliphatic or aromatic acids and their salts such as malic acid, malates, tartaric acid and tartarates, gluconic acid and gluoconates, citric acid and citrates, malonic acid and malonates, formic acid and formates, lactic acid and lactates, phthalic acid and phtalates. Polyhydroxybenzoic acid and its salts are also used. [0028]
  • Examples of oxidizing agents comprise, hydrogen peroxide; and iodates, nitrates, carbonates, perchlorates, and/or persulfates of alkali, alkaline earth and rare earth metals. [0029]
  • Examples of inhibitors include BTA (benzotriazole) and TTA (tolyltriazole) or mixtures thereof. Other inhibitors that can be used are 1-hydroxybenzotriazole, N-(1H-benzotriazole-1-ylmethyl)formamide, 3,5-dimethylpyrazole, indazole, 4-bromopyrazole, 3-amino-5-phenylpyrazole, 3-amino-4-pyrazolecarbonitrile, 1-methyimidazole, Indolin QTS and the like. [0030]
  • The weight percentages of the complexing agents, oxidizing agents and corrosion inhibitors are adjusted to maximize the electropolishing rate desired. [0031]
  • EXAMPLE 1
  • This example illustrates the removal rate due to electropolishing copper using a conventional, abrasive free CMP polishing fluid as the electrolyte. A current density of 0.1 Amp per sq. cm. was used during this experiment. Each data point was generated using a copper (Cu) disk, 1.2 cm, available from Johnson Matthey Company, immersed in the CMP polishing fluid for various contact times. The CMP polishing fluid contained about 5% of ammonium hydrogen phthalate, about 1% of iminodiacetic acid, about 0.08% of tolyltriazole and about 1.7% of hydrogen peroxide. The experimental results are tabulated below. [0032]
    Hold Time Initial
    (min) Wt (gm) Final Wt (gm) Wt. Loss (gm) Wt. Loss (A)
    1 1.26 1.2585 0.0015 59529.15
    2 1.2386 1.237 0.0016 63452.92
    3 1.2442 1.2417 0.0025 99215.25
    4 1.2446 1.2413 0.0033 130941.7
    5 1.2635 1.2595 0.004 158632.3
  • The results shown in FIGS. 7 and 8 indicate that electropolishing of copper utilizing conventional CMP polishing fluids achieves rapid removal of the metal layer from the substrate. [0033]
  • CMP of copper results in a removal rate of about 2,000 to about 4,000 Angstroms per minute. Thus for copper layer about 15,000 Angstroms in thickness, the average duration is about 5 minutes. Traditionally, electropolishing requires the use of phosphoric acid or phosphate salt electrolytes or other electrolytes used in the plating industry. This choice of electrolyte makes integration of conventional electropolishing with CMP difficult due to cross-contamination and waste handling issues. Using a CMP slurry as the electrolyte enables integration of electropolishing with CMP resulting in a hybrid process that reduces processing time, significantly reduces wastes and yields substrates with highly planar surfaces. [0034]
  • Embodiments and modifications of the invention in the disclosed embodiments are intended to be covered by the spirit and scope of the appended claims. [0035]

Claims (7)

    What is claimed is:
  1. 1. Apparatus for removing metal from a semiconductor substrate, comprising: a polishing pad, a holder of the semiconductor substrate in close proximity to the polishing pad, an electropolishing electrolyte, a dispenser of the electropolishing electrolyte at an interface of the polishing pad and the substrate, and a DC voltage source applying a DC voltage across the polishing pad and the substrate to remove metal from the metal layer.
  2. 2. The apparatus as recited in claim 1, wherein the DC voltage source is reversible in polarity.
  3. 3. The apparatus as recited in claim 1, wherein the electropolishing electrolyte comprises a polishing composition for polishing the substrate with the polishing pad and with the polishing composition.
  4. 4. A method for removing metal from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad.
  5. 5. The method of claim 4 further comprising the steps of: turning off the voltage across the polishing pad and the substrate, and polishing the substrate with the polishing pad and with the electropolishing electrolyte comprising a polishing composition, while the voltage is turned off.
  6. 6. The method of claim 4 further comprising the steps of: polishing the substrate with the polishing pad and with the electropolishing electrolyte comprising a polishing composition, while applying the voltage across the polishing pad and the substrate.
  7. 7. The method of claim 6 further comprising the steps of: turning off the voltage across the polishing pad and the substrate, and polishing the substrate with the polishing pad and with the electropolishing electrolyte comprising a polishing composition, while the voltage is turned off.
US09989338 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization Abandoned US20020104764A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US24999500 true 2000-11-20 2000-11-20
US09989338 US20020104764A1 (en) 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09989338 US20020104764A1 (en) 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization

Publications (1)

Publication Number Publication Date
US20020104764A1 true true US20020104764A1 (en) 2002-08-08

Family

ID=22945867

Family Applications (1)

Application Number Title Priority Date Filing Date
US09989338 Abandoned US20020104764A1 (en) 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization

Country Status (2)

Country Link
US (1) US20020104764A1 (en)
WO (1) WO2002041369A3 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020025759A1 (en) * 2000-08-30 2002-02-28 Whonchee Lee Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US20020025763A1 (en) * 2000-08-30 2002-02-28 Whonchee Lee Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US20030054729A1 (en) * 2000-08-30 2003-03-20 Whonchee Lee Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20030109198A1 (en) * 2000-08-30 2003-06-12 Whonchee Lee Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US20030129927A1 (en) * 2000-08-30 2003-07-10 Whonchee Lee Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US20030226764A1 (en) * 2000-08-30 2003-12-11 Moore Scott E. Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US20040043629A1 (en) * 2002-08-29 2004-03-04 Whonchee Lee Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US20040043582A1 (en) * 2002-08-29 2004-03-04 Dinesh Chopra Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates
US20040043705A1 (en) * 2002-08-29 2004-03-04 Whonchee Lee Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US20040235297A1 (en) * 2003-05-23 2004-11-25 Bih-Tiao Lin Reverse electroplating for damascene conductive region formation
WO2004111146A1 (en) * 2003-06-06 2004-12-23 Applied Materials, Inc. Polishing composition and method for polishing a conductive material
US6848977B1 (en) 2003-08-29 2005-02-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad for electrochemical mechanical polishing
US20050035000A1 (en) * 2000-08-30 2005-02-17 Whonchee Lee Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US20050056550A1 (en) * 2003-09-17 2005-03-17 Whonchee Lee Methods and apparatus for removing conductive material from a microelectronic substrate
US20050196963A1 (en) * 2004-02-20 2005-09-08 Whonchee Lee Methods and apparatuses for electrochemical-mechanical polishing
US20060042956A1 (en) * 2004-09-01 2006-03-02 Whonchee Lee Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US20060191800A1 (en) * 2000-08-30 2006-08-31 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US20070093182A1 (en) * 2005-10-24 2007-04-26 3M Innovative Properties Company Polishing fluids and methods for CMP
US20070290166A1 (en) * 2001-03-14 2007-12-20 Liu Feng Q Method and composition for polishing a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140598A (en) * 1976-06-03 1979-02-20 Hitachi Shipbuilding & Engineering Co., Ltd. Mirror finishing
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6328872B1 (en) * 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070111641A1 (en) * 2000-08-30 2007-05-17 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20020025763A1 (en) * 2000-08-30 2002-02-28 Whonchee Lee Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US20030054729A1 (en) * 2000-08-30 2003-03-20 Whonchee Lee Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20030109198A1 (en) * 2000-08-30 2003-06-12 Whonchee Lee Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US20030129927A1 (en) * 2000-08-30 2003-07-10 Whonchee Lee Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US20030226764A1 (en) * 2000-08-30 2003-12-11 Moore Scott E. Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US8048287B2 (en) 2000-08-30 2011-11-01 Round Rock Research, Llc Method for selectively removing conductive material from a microelectronic substrate
US9214359B2 (en) 2000-08-30 2015-12-15 Micron Technology, Inc. Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates
US7972485B2 (en) 2000-08-30 2011-07-05 Round Rock Research, Llc Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20070037490A1 (en) * 2000-08-30 2007-02-15 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US20060249397A1 (en) * 2000-08-30 2006-11-09 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US20020025759A1 (en) * 2000-08-30 2002-02-28 Whonchee Lee Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US20060191800A1 (en) * 2000-08-30 2006-08-31 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US20050035000A1 (en) * 2000-08-30 2005-02-17 Whonchee Lee Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US20050034999A1 (en) * 2000-08-30 2005-02-17 Whonchee Lee Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US7094131B2 (en) 2000-08-30 2006-08-22 Micron Technology, Inc. Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US20100006428A1 (en) * 2000-08-30 2010-01-14 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20070290166A1 (en) * 2001-03-14 2007-12-20 Liu Feng Q Method and composition for polishing a substrate
US8048756B2 (en) 2002-08-29 2011-11-01 Micron Technology, Inc. Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US20080045009A1 (en) * 2002-08-29 2008-02-21 Micron Technology, Inc. Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates
US7700436B2 (en) 2002-08-29 2010-04-20 Micron Technology, Inc. Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture
US20060199351A1 (en) * 2002-08-29 2006-09-07 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and non-conductive materials of a microelectronic substrate
US20050020004A1 (en) * 2002-08-29 2005-01-27 Dinesh Chopra Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates
US20040043629A1 (en) * 2002-08-29 2004-03-04 Whonchee Lee Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US20040043705A1 (en) * 2002-08-29 2004-03-04 Whonchee Lee Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US20040043582A1 (en) * 2002-08-29 2004-03-04 Dinesh Chopra Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates
US20040235297A1 (en) * 2003-05-23 2004-11-25 Bih-Tiao Lin Reverse electroplating for damascene conductive region formation
WO2004111146A1 (en) * 2003-06-06 2004-12-23 Applied Materials, Inc. Polishing composition and method for polishing a conductive material
JP2007520871A (en) * 2003-06-06 2007-07-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated The polishing composition and conductive material polishing process
US6848977B1 (en) 2003-08-29 2005-02-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad for electrochemical mechanical polishing
US20050056550A1 (en) * 2003-09-17 2005-03-17 Whonchee Lee Methods and apparatus for removing conductive material from a microelectronic substrate
US20050059324A1 (en) * 2003-09-17 2005-03-17 Whonchee Lee Methods and apparatus for removing conductive material from a microelectronic substrate
US8101060B2 (en) 2004-02-20 2012-01-24 Round Rock Research, Llc Methods and apparatuses for electrochemical-mechanical polishing
US20060189139A1 (en) * 2004-02-20 2006-08-24 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7670466B2 (en) 2004-02-20 2010-03-02 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US20050196963A1 (en) * 2004-02-20 2005-09-08 Whonchee Lee Methods and apparatuses for electrochemical-mechanical polishing
US20090255806A1 (en) * 2004-09-01 2009-10-15 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US8603319B2 (en) 2004-09-01 2013-12-10 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US20060042956A1 (en) * 2004-09-01 2006-03-02 Whonchee Lee Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US8038901B2 (en) 2005-10-24 2011-10-18 3M Innovative Properties Company Polishing fluids and methods for CMP
US20080315153A1 (en) * 2005-10-24 2008-12-25 3M Innovative Properties Company Polishing fluids and methods for cmp
US8070843B2 (en) 2005-10-24 2011-12-06 3M Innovative Properties Company Polishing fluids and methods for CMP
US20070093182A1 (en) * 2005-10-24 2007-04-26 3M Innovative Properties Company Polishing fluids and methods for CMP
US20080315154A1 (en) * 2005-10-24 2008-12-25 3M Innovative Properties Company Polishing fluids and methods for cmp
US7435162B2 (en) 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP

Also Published As

Publication number Publication date Type
WO2002041369A3 (en) 2004-01-08 application
WO2002041369A2 (en) 2002-05-23 application

Similar Documents

Publication Publication Date Title
US5958288A (en) Composition and slurry useful for metal CMP
US6033596A (en) Multi-oxidizer slurry for chemical mechanical polishing
US6117783A (en) Chemical mechanical polishing composition and process
US6444569B2 (en) Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6736952B2 (en) Method and apparatus for electrochemical planarization of a workpiece
US6136711A (en) Polishing composition including an inhibitor of tungsten etching
US6812193B2 (en) Slurry for mechanical polishing (CMP) of metals and use thereof
US5700383A (en) Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US6190237B1 (en) pH-buffered slurry and use thereof for polishing
US6774041B1 (en) Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device
US5783489A (en) Multi-oxidizer slurry for chemical mechanical polishing
US5897375A (en) Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6899804B2 (en) Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6071816A (en) Method of chemical mechanical planarization using a water rinse to prevent particle contamination
US6348076B1 (en) Slurry for mechanical polishing (CMP) of metals and use thereof
US6316365B1 (en) Chemical-mechanical polishing method
US20040077295A1 (en) Process for reducing dishing and erosion during chemical mechanical planarization
US6524167B1 (en) Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6722950B1 (en) Method and apparatus for electrodialytic chemical mechanical polishing and deposition
Kondo et al. Abrasive‐Free Polishing for Copper Damascene Interconnection
US20050076578A1 (en) Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
US5911619A (en) Apparatus for electrochemical mechanical planarization
US20050079718A1 (en) Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US5840629A (en) Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5807165A (en) Method of electrochemical mechanical planarization

Legal Events

Date Code Title Description
AS Assignment

Owner name: RODEL HOLDINGS, INC., DELAWARE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BANERJEE, GAUTAM;COOK, LEE MELBOURNE;REEL/FRAME:012634/0783;SIGNING DATES FROM 20011220 TO 20020110