ATE421769T1 - Cmp-zusammensetzung mit einem tensid - Google Patents

Cmp-zusammensetzung mit einem tensid

Info

Publication number
ATE421769T1
ATE421769T1 AT05817425T AT05817425T ATE421769T1 AT E421769 T1 ATE421769 T1 AT E421769T1 AT 05817425 T AT05817425 T AT 05817425T AT 05817425 T AT05817425 T AT 05817425T AT E421769 T1 ATE421769 T1 AT E421769T1
Authority
AT
Austria
Prior art keywords
substrate
surfactant
cmp composition
polishing
polishing composition
Prior art date
Application number
AT05817425T
Other languages
English (en)
Inventor
Tao Sun
Robert Medsker
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE421769T1 publication Critical patent/ATE421769T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Organic Insulating Materials (AREA)
  • Dental Preparations (AREA)
  • Glass Compositions (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
AT05817425T 2004-10-28 2005-10-21 Cmp-zusammensetzung mit einem tensid ATE421769T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/975,585 US7524347B2 (en) 2004-10-28 2004-10-28 CMP composition comprising surfactant

Publications (1)

Publication Number Publication Date
ATE421769T1 true ATE421769T1 (de) 2009-02-15

Family

ID=35840204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05817425T ATE421769T1 (de) 2004-10-28 2005-10-21 Cmp-zusammensetzung mit einem tensid

Country Status (11)

Country Link
US (1) US7524347B2 (de)
EP (1) EP1829093B1 (de)
JP (1) JP4965451B2 (de)
KR (1) KR101109300B1 (de)
CN (2) CN101044600A (de)
AT (1) ATE421769T1 (de)
DE (1) DE602005012546D1 (de)
IL (1) IL182536A (de)
MY (1) MY143941A (de)
TW (1) TWI313703B (de)
WO (1) WO2006049912A2 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
KR100684877B1 (ko) * 2005-01-05 2007-02-20 삼성전자주식회사 슬러리 조성물 및 이를 이용한 화학적 기계적 연마 공정을포함하는 반도체 소자 제조 방법
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
JP5280774B2 (ja) * 2007-09-14 2013-09-04 花王株式会社 垂直磁気記録方式ハードディスク用基板用水系洗浄剤組成物
CN103045099B (zh) * 2007-09-14 2015-03-25 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
WO2009041697A1 (ja) * 2007-09-28 2009-04-02 Nitta Haas Incorporated 研磨用組成物
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
JP4981750B2 (ja) * 2007-10-29 2012-07-25 花王株式会社 ハードディスク基板用研磨液組成物
CN101177591B (zh) * 2007-12-07 2010-06-02 天长市华润清洗科技有限公司 金属抛光剂及其制备方法
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
JP5505987B2 (ja) * 2008-07-11 2014-05-28 ニッタ・ハース株式会社 研磨組成物
CN101638557A (zh) * 2008-08-01 2010-02-03 安集微电子（上海）有限公司 一种化学机械抛光液
CN101665661A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 胺类化合物的应用以及一种化学机械抛光液
JP5576634B2 (ja) * 2008-11-05 2014-08-20 山口精研工業株式会社 研磨剤組成物及び磁気ディスク基板の研磨方法
KR101178717B1 (ko) 2008-12-22 2012-08-31 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8226841B2 (en) * 2009-02-03 2012-07-24 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US9330703B2 (en) * 2009-06-04 2016-05-03 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP5536433B2 (ja) * 2009-12-11 2014-07-02 花王株式会社 ハードディスク基板用研磨液組成物
US8404369B2 (en) * 2010-08-03 2013-03-26 WD Media, LLC Electroless coated disks for high temperature applications and methods of making the same
KR20120020556A (ko) * 2010-08-30 2012-03-08 삼성전자주식회사 화학적 기계적 연마 공정의 슬러리 조성물 및 이를 이용하는 상변화 메모리 소자의 형성 방법
KR20120136881A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
JP2013030235A (ja) * 2011-07-27 2013-02-07 Alphana Technology Co Ltd 回転機器および回転機器を製造する方法
US9039914B2 (en) * 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
EP2859059B1 (de) * 2012-06-11 2019-12-18 Cabot Microelectronics Corporation Zusammensetzung und verfahren zum polieren von molybdän
JP5580441B2 (ja) * 2013-03-05 2014-08-27 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
US8961807B2 (en) 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
SG11201602877RA (en) 2013-10-18 2016-05-30 Cabot Microelectronics Corp Polishing composition and method for nickel-phosphorous coated memory disks
US9401104B2 (en) 2014-05-05 2016-07-26 Cabot Microelectronics Corporation Polishing composition for edge roll-off improvement
TWI530557B (zh) * 2014-05-29 2016-04-21 卡博特微電子公司 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物
WO2016097915A1 (en) * 2014-12-16 2016-06-23 Basf Se Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium
CN117625325A (zh) 2015-01-13 2024-03-01 Cmc材料股份有限公司 用于在化学机械抛光后清洁半导体晶片的清洁组合物及方法
MY186924A (en) 2015-04-06 2021-08-26 Cmc Mat Inc Cmp composition and methods for polishing rigid disks
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR20190098142A (ko) * 2016-12-28 2019-08-21 니타 하스 인코포레이티드 연마용 조성물
CN107541731A (zh) * 2017-09-05 2018-01-05 江苏飞拓界面工程科技有限公司 一种铝及铝合金高效环保抛光液及其制备方法
JP6894535B2 (ja) * 2017-12-27 2021-06-30 花王株式会社 アルミニウム製プラッタの製造方法
JP7183863B2 (ja) * 2018-03-13 2022-12-06 Jsr株式会社 化学機械研磨用組成物及び化学機械研磨方法
US10479911B1 (en) 2018-06-05 2019-11-19 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll off
JP2019131814A (ja) * 2019-03-08 2019-08-08 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
KR20230044296A (ko) * 2020-07-29 2023-04-03 버슘머트리얼즈 유에스, 엘엘씨 구리 및 실리콘 관통 전극(tsv)의 화학적 기계적 평탄화(cmp)를 위한 패드-인-어-보틀(pib) 기술
CN112646151B (zh) * 2020-12-09 2022-08-02 华南师范大学 一种可降解的生物基缓释型铅离子螯合剂及其制备方法和应用

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
ATE312895T1 (de) * 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP4163785B2 (ja) * 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
CN1092698C (zh) * 1998-08-04 2002-10-16 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2000160139A (ja) * 1998-12-01 2000-06-13 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6471735B1 (en) * 1999-08-17 2002-10-29 Air Liquide America Corporation Compositions for use in a chemical-mechanical planarization process
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
US6280490B1 (en) * 1999-09-27 2001-08-28 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6488729B1 (en) * 1999-09-30 2002-12-03 Showa Denko K.K. Polishing composition and method
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6350393B2 (en) * 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
JP3841995B2 (ja) * 1999-12-28 2006-11-08 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4552275B2 (ja) * 2000-05-30 2010-09-29 株式会社アドヴィックス 車両の液圧ブレーキ装置
JP4156175B2 (ja) * 2000-05-31 2008-09-24 山口精研工業株式会社 タンタル酸リチウム／ニオブ酸リチウム単結晶材料用精密研磨組成物
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6541384B1 (en) * 2000-09-08 2003-04-01 Applied Materials, Inc. Method of initiating cooper CMP process
US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4009986B2 (ja) * 2000-11-29 2007-11-21 株式会社フジミインコーポレーテッド 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6579923B2 (en) * 2001-02-05 2003-06-17 3M Innovative Properties Company Use of a silicone surfactant in polishing compositions
CN100378145C (zh) * 2001-06-21 2008-04-02 花王株式会社 研磨液组合物
WO2003005431A1 (fr) * 2001-07-04 2003-01-16 Seimi Chemical Co., Ltd. Suspension de polissage chimico-mecanique destinee a un circuit integre a semi-conducteurs, procede de polissage et circuit integre a semi-conducteurs
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6896591B2 (en) * 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法

Also Published As

Publication number Publication date
TWI313703B (en) 2009-08-21
KR101109300B1 (ko) 2012-01-31
DE602005012546D1 (de) 2009-03-12
MY143941A (en) 2011-07-29
EP1829093A2 (de) 2007-09-05
EP1829093B1 (de) 2009-01-21
CN102337080B (zh) 2016-01-20
US7524347B2 (en) 2009-04-28
CN102337080A (zh) 2012-02-01
CN101044600A (zh) 2007-09-26
TW200621961A (en) 2006-07-01
WO2006049912A2 (en) 2006-05-11
KR20070072617A (ko) 2007-07-04
WO2006049912A3 (en) 2006-10-26
IL182536A0 (en) 2007-09-20
JP4965451B2 (ja) 2012-07-04
JP2008517791A (ja) 2008-05-29
IL182536A (en) 2014-06-30
US20060096496A1 (en) 2006-05-11

Similar Documents

Publication Publication Date Title
ATE421769T1 (de) Cmp-zusammensetzung mit einem tensid
DE60307111D1 (de) Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten
TW200420697A (en) CMP method utilizing amphiphilic nonionic surfactants
WO2004076574A3 (en) Cmp composition comprising a sulfonic acid and a method for polishing noble metals
TW200714406A (en) Use of cmp for aluminum mirror and solar cell fabrication
SG157354A1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
MY159259A (en) Polishing composition for nickel-phosphorous memory disks
TW200624527A (en) A cmp composition with a polymer additive for polishing noble metals
MY158719A (en) Polishing composition for nickel-phosphorous memory disks
TW200705376A (en) Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
MY149715A (en) Method of polishing nickel-phosphorous
ATE537232T1 (de) Cmp-zusammensetzung für verbesserte oxidentfernungsgeschwindigkeit
MY133337A (en) Composition and method for copper chemical mechanical planarization
IL189504A0 (en) Abrasive-free polishing method
ATE529489T1 (de) Polierzusammensetzung und polierverfahren
MY153944A (en) Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
TW200724627A (en) CMP slurry and method for polishing

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties