JP4965451B2 - 界面活性剤を含むcmp組成物 - Google Patents
界面活性剤を含むcmp組成物 Download PDFInfo
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- JP4965451B2 JP4965451B2 JP2007539010A JP2007539010A JP4965451B2 JP 4965451 B2 JP4965451 B2 JP 4965451B2 JP 2007539010 A JP2007539010 A JP 2007539010A JP 2007539010 A JP2007539010 A JP 2007539010A JP 4965451 B2 JP4965451 B2 JP 4965451B2
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- Prior art keywords
- acid
- polishing composition
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- nonionic surfactant
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 140
- 239000004094 surface-active agent Substances 0.000 title claims description 40
- 238000005498 polishing Methods 0.000 claims abstract description 215
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 150000007524 organic acids Chemical class 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 21
- 229920001577 copolymer Polymers 0.000 claims description 18
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000013522 chelant Substances 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 11
- -1 siloxane units Chemical group 0.000 claims description 11
- 235000002906 tartaric acid Nutrition 0.000 claims description 11
- 239000011975 tartaric acid Substances 0.000 claims description 11
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 9
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 239000008119 colloidal silica Substances 0.000 claims description 8
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004471 Glycine Substances 0.000 claims description 5
- 229920005606 polypropylene copolymer Polymers 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 claims description 3
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 150000001253 acrylic acids Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910018104 Ni-P Inorganic materials 0.000 description 9
- 229910018536 Ni—P Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229920002359 Tetronic® Polymers 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000008365 aqueous carrier Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000006174 pH buffer Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005320 surfactant adsorption Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Organic Insulating Materials (AREA)
- Dental Preparations (AREA)
- Glass Compositions (AREA)
Description
本発明の研磨方法は同様にメモリー若しくはリジッドディスクの研磨のために設計した研磨装置とともに使用することにも非常に適合している。概して、この装置は一対の定盤(すなわち、上方の定盤及び下方の定盤)及び一対の研磨パッド(すなわち上方の定盤に取り付けた上方の研磨パッド及び下方の定盤に取り付けた下方の研磨パッド)を含む。上方の定盤及び上方の研磨パッドはそこに形成した一続きの穴(hole)又は溝(channel)を有し、これが研磨組成物又はスラリーが上方の定盤及び上方の研磨パッドを通過し研磨されるリジッドディスクの表面に達することを可能にする。下方の定盤は一続きの内側及び外側の周辺機器(gear)をさらに含み、これは一又は二以上のディスクキャリアを回転するために使用される。このキャリアは一又は二以上のリジッドディスクを、リジッドディスクの主要面(すなわち上面及び下面)が上方又は下方の研磨パッドと接触することができるように、支持する。使用時に、リジッドディスクの表面は研磨パッド及び研磨組成物又はスラリーと接触するようにされ、そして上方又は下方の定盤は共通軸のまわりを独立して回転させられている。キャリアが上方及び下方の定盤及び/又は上方及び下方の研磨パッドの範囲内で単数又は複数の軸について回転するように、下方の定盤の周辺機器も動かされる。円形運動(定盤及び研磨パッドの回転による)及び軌道運動(キャリアの回転による)の組合せの結果としてリジッドディスクの上方及び下方の表面が均等に研磨される。
本例は、本発明の研磨組成物を伴う場合に観察された端部研磨及び除去速度への異なるコポリマー界面活性剤の影響を示し、ここでこの界面活性剤は、シロキサンユニット、エチレン酸化物ユニット、及びプロピレン酸化物ユニットを含むコポリマー界面活性剤であり、Silwet(商標)界面活性剤の群から選択された。Ni−Pメッキアルミニウムディスクからなる同様の基材を、界面活性剤を含まない対照研磨組成物で、及び列挙した界面活性剤を200ppm含む本発明の研磨組成物で、研磨した。結果を表1に示す。
本例は、本発明の研磨組成物を伴う場合に観察された除去速度及び端部研磨への界面活性剤の増量の影響を示し、ここでこの界面活性剤はエチレンジアミンとエチレン酸化物ユニット及びプロピレン酸化物ユニットとのコポリマーであり、具体的にはTetronic(商標)904である。Ni−Pメッキアルミニウムディスクからなる同様の基材を、界面活性剤を含まない対照研磨組成物で、及び様々な量のTetronic(商標)904を含む本発明の研磨組成物で、研磨した。結果を表2に示す。
本例は、本発明の研磨組成物を伴う場合に観察された除去速度及び端部研磨へのコポリマー界面活性剤の増量の影響を示し、ここでこの界面活性剤はシリコーンユニット、エチレン酸化物ユニット及びプロピレン酸化物ユニットを含むコポリマー界面活性剤であり、具体的にはSilwet(商標)7200である。Ni−Pメッキアルミニウムディスクからなる同様の基材を、界面活性剤を含まない対照研磨組成物で、及び様々な量のSilwet(商標)7200を含む本発明の研磨組成物で、研磨した。結果を表3に示す。
本例は、本発明の研磨組成物を伴う場合に観察された除去速度及び端部研磨へのコポリマー界面活性剤の増量の影響を示し、ここでこの界面活性剤は、一端に過フッ素化アルキル鎖及び他端にヒドロキシル基を含むエチレン酸化物でできた線状ポリマーを含むコポリマー界面活性剤であり、具体的にはZonyl(商標)FSOである。Ni−Pメッキアルミニウムディスクからなる同様の基材を、界面活性剤を含まない対照研磨組成物で、及び様々な量のZonyl(商標)FSOを含む本発明の研磨組成物で、研磨した。結果を表4に示す。
Claims (22)
- (a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のコロイド状シリカ、
(d)10〜1000ppmの非イオン性界面活性剤、
(e)金属キレート有機酸、
(f)過酸化水素、過酸化尿素、ペルオキシ硫酸、ペルオキシ酢酸、過ホウ酸、これらの塩、及びこれらの組合せからなる群から選択されている酸化剤、及び
(g)液体キャリア
を含んでなる、研磨組成物。 - 非イオン性界面活性剤がシロキサンユニット、エチレン酸化物ユニット、及びプロピレン酸化物ユニットを含むコポリマー界面活性剤の群から選択されている、請求項1に記載された研磨組成物。
- 非イオン性界面活性剤がポリマーを含むアクリル酸の群から選択されている、請求項1に記載された研磨組成物。
- 非イオン性界面活性剤が、一端に過フッ素化アルキル鎖を及び他端にヒドロキシル基又はアルキル基を含むエチレン酸化物の線状ポリマーの群から選択されている、請求項1に記載された研磨組成物。
- 非イオン性界面活性剤が、エチレン酸化物ユニット及びプロピレン酸化物ユニットとエチレンジアミンとのコポリマーの群から選択されている、請求項1に記載された研磨組成物。
- 金属キレート有機酸が、マロン酸、コハク酸、アジピン酸、乳酸、マレイン酸、リンゴ酸、クエン酸、グリシン、アスパラギン酸、酒石酸、グルコン酸、イミノ二酢酸、及びフマル酸からなる群から選択されている、請求項1に記載された研磨組成物。
- 液体キャリアが水を含んでなる、請求項1に記載された研磨組成物。
- 研磨組成物のpHが1〜7である、請求項7に記載された研磨組成物。
- 研磨組成物のpHが2〜5である、請求項8に記載された研磨組成物。
- (a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のシリカ、
(d)シロキサンユニット、エチレン酸化物ユニット、及びプロピレン酸化物ユニットを含むコポリマー界面活性剤の群から選択した10〜1000ppmの非イオン性界面活性剤、
(e)酒石酸、及び
(f)水、
を含む研磨組成物であって、ここで研磨組成物のpHが2〜5である、請求項1に記載された研磨組成物。 - (a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のシリカ、
(d)エチレン酸化物ユニット及びプロピレン酸化物ユニットとエチレンジアミンとのコポリマーの群から選択した10〜1000ppmの非イオン性界面活性剤、
(e)酒石酸、
(f)過酸化水素、及び
(g)水、
を含む研磨組成物であって、ここで研磨組成物のpHが2〜5である、請求項1に記載された研磨組成物。 - 基材を化学機械研磨する方法であって:
(i)基材を研磨パッド及び以下を含む化学機械研磨組成物と接触させること:
(a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のコロイド状シリカ、
(d)10〜1000ppmの非イオン性界面活性剤、
(e)金属キレート有機酸、
(f)過酸化水素、過酸化尿素、ペルオキシ硫酸、ペルオキシ酢酸、過ホウ酸、これらの塩、及びこれらの組合せからなる群から選択されている酸化剤、及び
(g)液体キャリア、
(ii)基材と研磨パッドの間に化学機械研磨組成物を伴って、基材に対して研磨パッドを動かすこと、及び
(iii)基材を研磨するために基材の少なくとも一部を磨り減らすこと、を含んでなる方法。 - 非イオン性界面活性剤がシロキサンユニット、エチレン酸化物ユニット、及びプロピレン酸化物ユニットを含むコポリマー界面活性剤の群から選択されている、請求項12に記載された方法。
- 非イオン性界面活性剤がアクリル酸エステルのターポリマーの群から選択されている、請求項12に記載された方法。
- 非イオン性界面活性剤が、一端に過フッ素化アルキル鎖を及び他端にヒドロキシル基又はアルキル基を含むエチレン酸化物の線状ポリマーの群から選択されている、請求項12に記載された方法。
- 非イオン性界面活性剤が、エチレン酸化物ユニット及びプロピレン酸化物ユニットとエチレンジアミンとのコポリマーの群から選択されている、請求項12に記載された方法。
- 金属キレート有機酸が、マロン酸、コハク酸、アジピン酸、乳酸、リンゴ酸、クエン酸、グリシン、アスパラギン酸、酒石酸、グルコン酸、イミノ二酢酸、及びフマル酸からなる群から選択されている、請求項12に記載された方法。
- 液体キャリアが水を含んでなる、請求項12に記載された方法。
- 研磨組成物のpHが1〜7である、請求項18に記載された方法。
- 研磨組成物のpHが2〜5である、請求項19に記載された方法。
- 化学機械研磨組成物が:
(a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のコロイド状シリカ、
(d)シロキサンユニット、エチレン酸化物ユニット、及びプロピレン酸化物ユニットを含むコポリマー界面活性剤の群から選択した10〜1000ppmの非イオン性界面活性剤、
(e)酒石酸、及び
(f)水、
を含み、ここで研磨組成物のpHが2〜5である、請求項12に記載された方法。 - 化学機械研磨組成物が:
(a)0.2〜1質量%のフュームドアルミナ、
(b)0.1〜1質量%のアルファアルミナ、
(c)0.1〜4質量%のコロイド状シリカ、
(d)エチレン酸化物ユニット及びプロピレン酸化物ユニットとエチレンジアミンとのコポリマーの群から選択した10〜1000ppmの非イオン性界面活性剤、
(e)酒石酸、
(f)過酸化水素、及び
(g)水、
を含み、ここで研磨組成物のpHが2〜5である、請求項12に記載された方法。
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US10/975,585 US7524347B2 (en) | 2004-10-28 | 2004-10-28 | CMP composition comprising surfactant |
US10/975,585 | 2004-10-28 | ||
PCT/US2005/038028 WO2006049912A2 (en) | 2004-10-28 | 2005-10-21 | Cmp composition comprising surfactant |
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CN (2) | CN101044600A (ja) |
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Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
KR100684877B1 (ko) * | 2005-01-05 | 2007-02-20 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학적 기계적 연마 공정을포함하는 반도체 소자 제조 방법 |
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
CN103045099B (zh) * | 2007-09-14 | 2015-03-25 | 安集微电子(上海)有限公司 | 用于抛光多晶硅的化学机械抛光液 |
CN101802911B (zh) * | 2007-09-14 | 2013-01-02 | 花王株式会社 | 用于垂直磁记录方式硬盘用基板的水系洗涤剂组合物 |
WO2009041697A1 (ja) * | 2007-09-28 | 2009-04-02 | Nitta Haas Incorporated | 研磨用組成物 |
US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
JP4981750B2 (ja) * | 2007-10-29 | 2012-07-25 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
CN101177591B (zh) * | 2007-12-07 | 2010-06-02 | 天长市华润清洗科技有限公司 | 金属抛光剂及其制备方法 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
US8247326B2 (en) * | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
CN104031609B (zh) * | 2008-07-11 | 2016-08-03 | 霓达哈斯股份有限公司 | 研磨组合物 |
CN101638557A (zh) * | 2008-08-01 | 2010-02-03 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN101665661A (zh) * | 2008-09-05 | 2010-03-10 | 安集微电子科技(上海)有限公司 | 胺类化合物的应用以及一种化学机械抛光液 |
JP5576634B2 (ja) * | 2008-11-05 | 2014-08-20 | 山口精研工業株式会社 | 研磨剤組成物及び磁気ディスク基板の研磨方法 |
KR101178717B1 (ko) | 2008-12-22 | 2012-08-31 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
US8226841B2 (en) * | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
JP5536433B2 (ja) * | 2009-12-11 | 2014-07-02 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
US8404369B2 (en) * | 2010-08-03 | 2013-03-26 | WD Media, LLC | Electroless coated disks for high temperature applications and methods of making the same |
KR20120020556A (ko) * | 2010-08-30 | 2012-03-08 | 삼성전자주식회사 | 화학적 기계적 연마 공정의 슬러리 조성물 및 이를 이용하는 상변화 메모리 소자의 형성 방법 |
KR20120136881A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
JP2013030235A (ja) * | 2011-07-27 | 2013-02-07 | Alphana Technology Co Ltd | 回転機器および回転機器を製造する方法 |
US9039914B2 (en) * | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
KR102136432B1 (ko) * | 2012-06-11 | 2020-07-21 | 캐보트 마이크로일렉트로닉스 코포레이션 | 몰리브덴을 연마하기 위한 조성물 및 방법 |
JP5580441B2 (ja) * | 2013-03-05 | 2014-08-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
US8961807B2 (en) | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
WO2015057433A1 (en) | 2013-10-18 | 2015-04-23 | Cabot Microelectronics Corporation | Polishing composition and method for nickel-phosphorous coated memory disks |
US9401104B2 (en) | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的cmp組合物 |
KR20240141863A (ko) * | 2014-12-16 | 2024-09-27 | 바스프 에스이 | 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물 |
CN117625325A (zh) | 2015-01-13 | 2024-03-01 | Cmc材料股份有限公司 | 用于在化学机械抛光后清洁半导体晶片的清洁组合物及方法 |
MY186924A (en) | 2015-04-06 | 2021-08-26 | Cmc Mat Inc | Cmp composition and methods for polishing rigid disks |
US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
WO2018124230A1 (ja) * | 2016-12-28 | 2018-07-05 | ニッタ・ハース株式会社 | 研磨用組成物 |
CN107541731A (zh) * | 2017-09-05 | 2018-01-05 | 江苏飞拓界面工程科技有限公司 | 一种铝及铝合金高效环保抛光液及其制备方法 |
SG11202006025YA (en) * | 2017-12-27 | 2020-07-29 | Kao Corp | Method for producing aluminum platter |
JP7183863B2 (ja) * | 2018-03-13 | 2022-12-06 | Jsr株式会社 | 化学機械研磨用組成物及び化学機械研磨方法 |
US10479911B1 (en) | 2018-06-05 | 2019-11-19 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced edge roll off |
JP2019131814A (ja) * | 2019-03-08 | 2019-08-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
WO2021231090A1 (en) * | 2020-05-11 | 2021-11-18 | Versum Materials Us, Llc | Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes |
KR20230044296A (ko) * | 2020-07-29 | 2023-04-03 | 버슘머트리얼즈 유에스, 엘엘씨 | 구리 및 실리콘 관통 전극(tsv)의 화학적 기계적 평탄화(cmp)를 위한 패드-인-어-보틀(pib) 기술 |
CN112646151B (zh) * | 2020-12-09 | 2022-08-02 | 华南师范大学 | 一种可降解的生物基缓释型铅离子螯合剂及其制备方法和应用 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
WO1998004646A1 (en) * | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4163785B2 (ja) * | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
CN1092698C (zh) * | 1998-08-04 | 2002-10-16 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
KR100447551B1 (ko) * | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
US6471735B1 (en) * | 1999-08-17 | 2002-10-29 | Air Liquide America Corporation | Compositions for use in a chemical-mechanical planarization process |
US6429133B1 (en) * | 1999-08-31 | 2002-08-06 | Micron Technology, Inc. | Composition compatible with aluminum planarization and methods therefore |
US6376381B1 (en) * | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6280490B1 (en) * | 1999-09-27 | 2001-08-28 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
US6488729B1 (en) * | 1999-09-30 | 2002-12-03 | Showa Denko K.K. | Polishing composition and method |
US6435944B1 (en) * | 1999-10-27 | 2002-08-20 | Applied Materials, Inc. | CMP slurry for planarizing metals |
US6350393B2 (en) * | 1999-11-04 | 2002-02-26 | Cabot Microelectronics Corporation | Use of CsOH in a dielectric CMP slurry |
JP3841995B2 (ja) * | 1999-12-28 | 2006-11-08 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
JP4552275B2 (ja) * | 2000-05-30 | 2010-09-29 | 株式会社アドヴィックス | 車両の液圧ブレーキ装置 |
JP4156175B2 (ja) * | 2000-05-31 | 2008-09-24 | 山口精研工業株式会社 | タンタル酸リチウム/ニオブ酸リチウム単結晶材料用精密研磨組成物 |
US6468913B1 (en) * | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6541384B1 (en) * | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP4009986B2 (ja) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6579923B2 (en) * | 2001-02-05 | 2003-06-17 | 3M Innovative Properties Company | Use of a silicone surfactant in polishing compositions |
CN100378145C (zh) * | 2001-06-21 | 2008-04-02 | 花王株式会社 | 研磨液组合物 |
JPWO2003005431A1 (ja) * | 2001-07-04 | 2004-10-28 | セイミケミカル株式会社 | 半導体集積回路用化学機械的研磨スラリー、研磨方法、及び半導体集積回路 |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
US6677239B2 (en) * | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
JP2004247605A (ja) * | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
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EP1829093A2 (en) | 2007-09-05 |
MY143941A (en) | 2011-07-29 |
TWI313703B (en) | 2009-08-21 |
EP1829093B1 (en) | 2009-01-21 |
IL182536A0 (en) | 2007-09-20 |
ATE421769T1 (de) | 2009-02-15 |
CN102337080A (zh) | 2012-02-01 |
KR101109300B1 (ko) | 2012-01-31 |
KR20070072617A (ko) | 2007-07-04 |
TW200621961A (en) | 2006-07-01 |
CN102337080B (zh) | 2016-01-20 |
WO2006049912A2 (en) | 2006-05-11 |
JP2008517791A (ja) | 2008-05-29 |
DE602005012546D1 (de) | 2009-03-12 |
WO2006049912A3 (en) | 2006-10-26 |
US7524347B2 (en) | 2009-04-28 |
US20060096496A1 (en) | 2006-05-11 |
CN101044600A (zh) | 2007-09-26 |
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