DE69817143D1 - Schleifmittel und verfahren zum polieren von halbleitersubstraten - Google Patents

Schleifmittel und verfahren zum polieren von halbleitersubstraten

Info

Publication number
DE69817143D1
DE69817143D1 DE69817143T DE69817143T DE69817143D1 DE 69817143 D1 DE69817143 D1 DE 69817143D1 DE 69817143 T DE69817143 T DE 69817143T DE 69817143 T DE69817143 T DE 69817143T DE 69817143 D1 DE69817143 D1 DE 69817143D1
Authority
DE
Germany
Prior art keywords
abrasive
semiconductor substrates
polishing semiconductor
polishing
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69817143T
Other languages
English (en)
Other versions
DE69817143T2 (de
Inventor
Naoto Miyashita
Yoshihiro Minami
Kenji Doi
Jun Takayasu
Hiroyuki Kohno
Hiroshi Kato
Kazuhiko Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuyama Corp
Original Assignee
Toshiba Corp
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuyama Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69817143D1 publication Critical patent/DE69817143D1/de
Publication of DE69817143T2 publication Critical patent/DE69817143T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
    • B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
DE69817143T 1997-05-07 1998-05-06 Schleifmittel und verfahren zum polieren von halbleitersubstraten Expired - Lifetime DE69817143T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11704597A JPH10309660A (ja) 1997-05-07 1997-05-07 仕上げ研磨剤
JP11704597 1997-05-07
PCT/JP1998/002014 WO1998050200A1 (fr) 1997-05-07 1998-05-06 Abrasif et procede de polissage de semi-conducteurs

Publications (2)

Publication Number Publication Date
DE69817143D1 true DE69817143D1 (de) 2003-09-18
DE69817143T2 DE69817143T2 (de) 2004-06-03

Family

ID=14702072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817143T Expired - Lifetime DE69817143T2 (de) 1997-05-07 1998-05-06 Schleifmittel und verfahren zum polieren von halbleitersubstraten

Country Status (7)

Country Link
US (1) US6354913B1 (de)
EP (1) EP0933166B1 (de)
JP (1) JPH10309660A (de)
KR (1) KR100332700B1 (de)
DE (1) DE69817143T2 (de)
TW (1) TW434094B (de)
WO (1) WO1998050200A1 (de)

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TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
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JP5121128B2 (ja) * 2005-06-20 2013-01-16 ニッタ・ハース株式会社 半導体研磨用組成物
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
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JP5315516B2 (ja) * 2007-09-28 2013-10-16 国立大学法人 熊本大学 研磨方法
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KR20120136882A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
TWI650408B (zh) * 2012-01-16 2019-02-11 日商福吉米股份有限公司 研磨用組成物，其製造方法，矽基板之製造方法及矽基板
JP2013016832A (ja) * 2012-08-29 2013-01-24 Fujimi Inc 研磨用組成物、ｌｐｄ低減剤及びそれを用いたｌｐｄ低減方法
JP2013021343A (ja) * 2012-08-29 2013-01-31 Fujimi Inc Ｌｐｄ低減剤、シリコンウエハの欠陥低減方法、及びシリコンウエハの製造方法
JP2014080461A (ja) * 2012-10-12 2014-05-08 Fujimi Inc 研磨用組成物の製造方法及び研磨用組成物
US20140179049A1 (en) * 2012-12-20 2014-06-26 Nanogram Corporation Silicon/germanium-based nanoparticle pastes with ultra low metal contamination
US20160288289A1 (en) * 2013-09-20 2016-10-06 Fujimi Incorporated Polishing composition
TWI692385B (zh) * 2014-07-17 2020-05-01 美商應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊
US10105812B2 (en) 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
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Also Published As

Publication number Publication date
KR100332700B1 (ko) 2002-04-15
TW434094B (en) 2001-05-16
DE69817143T2 (de) 2004-06-03
EP0933166B1 (de) 2003-08-13
EP0933166A4 (de) 2001-06-13
WO1998050200A1 (fr) 1998-11-12
KR20000023851A (ko) 2000-04-25
US6354913B1 (en) 2002-03-12
EP0933166A1 (de) 1999-08-04
JPH10309660A (ja) 1998-11-24

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