WO2009072465A1 - リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 - Google Patents

リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 Download PDF

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Publication number
WO2009072465A1
WO2009072465A1 PCT/JP2008/071798 JP2008071798W WO2009072465A1 WO 2009072465 A1 WO2009072465 A1 WO 2009072465A1 JP 2008071798 W JP2008071798 W JP 2008071798W WO 2009072465 A1 WO2009072465 A1 WO 2009072465A1
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Prior art keywords
base film
forming
composition
lithography
resist pattern
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PCT/JP2008/071798
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English (en)
French (fr)
Inventor
Dai Oguro
Go Higashihara
Seiji Kita
Mitsuharu Kitamura
Masashi Ogiwara
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Mitsubishi Gas Chemical Company, Inc.
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Publication date
Application filed by Mitsubishi Gas Chemical Company, Inc. filed Critical Mitsubishi Gas Chemical Company, Inc.
Priority to JP2009544661A priority Critical patent/JP5370158B2/ja
Priority to EP08857409.0A priority patent/EP2219076B1/en
Priority to KR1020107012373A priority patent/KR101397354B1/ko
Priority to US12/746,421 priority patent/US8592134B2/en
Priority to CN200880119430.8A priority patent/CN101889247B/zh
Publication of WO2009072465A1 publication Critical patent/WO2009072465A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/38—Block or graft polymers prepared by polycondensation of aldehydes or ketones onto macromolecular compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)

Abstract

　リソグラフィー用下層膜に、優れた光学特性及びエッチング耐性を付与するリソグラフィー用下層膜形成組成物、及び該組成物から形成された屈折率（ｎ）が高く、消衰係数（ｋ）が低く、透明でかつエッチング耐性が高く、さらに昇華性成分が極めて少ない下層膜、及び該下層膜を用いたパターン形成方法を提供する。そのような下層膜形成組成物は、少なくともナフタレン及び／又はアルキルナフタレンとホルムアルデヒドとを反応させて得られる、特定の単位を含むナフタレンホルムアルデヒド系重合体、及び有機溶媒を含むものである。
PCT/JP2008/071798 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 WO2009072465A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009544661A JP5370158B2 (ja) 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法
EP08857409.0A EP2219076B1 (en) 2007-12-07 2008-12-01 Composition for forming base film for lithography and method for forming multilayer resist pattern
KR1020107012373A KR101397354B1 (ko) 2007-12-07 2008-12-01 리소그라피용 하층막 형성 조성물 및 다층 레지스트 패턴 형성 방법
US12/746,421 US8592134B2 (en) 2007-12-07 2008-12-01 Composition for forming base film for lithography and method for forming multilayer resist pattern
CN200880119430.8A CN101889247B (zh) 2007-12-07 2008-12-01 用于形成光刻用下层膜的组合物和多层抗蚀图案的形成方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-317102 2007-12-07
JP2007317102 2007-12-07
JP2007-318874 2007-12-10
JP2007318874 2007-12-10
JP2007-334057 2007-12-26
JP2007334057 2007-12-26

Publications (1)

Publication Number Publication Date
WO2009072465A1 true WO2009072465A1 (ja) 2009-06-11

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ID=40717645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071798 WO2009072465A1 (ja) 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法

Country Status (7)

Country Link
US (1) US8592134B2 (ja)
EP (1) EP2219076B1 (ja)
JP (1) JP5370158B2 (ja)
KR (1) KR101397354B1 (ja)
CN (1) CN101889247B (ja)
TW (1) TWI437370B (ja)
WO (1) WO2009072465A1 (ja)

Cited By (59)

* Cited by examiner, † Cited by third party
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JP2009229666A (ja) * 2008-03-21 2009-10-08 Jsr Corp 下層膜形成用組成物及びそれを用いたパターン形成方法
JP2010122297A (ja) * 2008-11-17 2010-06-03 Mitsubishi Gas Chemical Co Inc リソグラフィー用下層膜形成組成物
JP2011037993A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂の製造方法
JP2011037992A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
WO2011024967A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
JP2011046837A (ja) * 2009-08-27 2011-03-10 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
WO2011034062A1 (ja) 2009-09-15 2011-03-24 三菱瓦斯化学株式会社 芳香族炭化水素樹脂及びリソグラフィー用下層膜形成組成物
JP2011081200A (ja) * 2009-10-07 2011-04-21 Mitsubishi Gas Chemical Co Inc 溶解抑止剤、ネガ型感放射線性組成物およびレジストパターン形成方法
WO2011099235A1 (ja) * 2010-02-12 2011-08-18 三菱瓦斯化学株式会社 下層膜材料及び多層レジストパターン形成方法
WO2012036121A1 (ja) * 2010-09-14 2012-03-22 東京応化工業株式会社 下地剤及びブロックコポリマーを含む層のパターン形成方法
WO2012090408A1 (ja) 2010-12-28 2012-07-05 三菱瓦斯化学株式会社 芳香族炭化水素樹脂、リソグラフィー用下層膜形成組成物及び多層レジストパターンの形成方法
WO2012165507A1 (ja) 2011-06-03 2012-12-06 三菱瓦斯化学株式会社 フェノール系樹脂およびリソグラフィー用下層膜形成材料
WO2013024779A1 (ja) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
WO2013047106A1 (ja) 2011-09-30 2013-04-04 三菱瓦斯化学株式会社 フルオレン構造を有する樹脂及びリソグラフィー用下層膜形成材料
WO2014038680A1 (ja) 2012-09-10 2014-03-13 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US20140227887A1 (en) * 2011-09-06 2014-08-14 Dongjin Semichem Co., Ltd. Phenol-based self-crosslinking polymer and resist underlayer film composition including same
WO2014123102A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
WO2014123107A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
WO2014203866A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 樹脂組成物、プリプレグ、樹脂シート及び金属箔張り積層板
WO2014203865A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 シアン酸エステル化合物、該化合物を含む硬化性樹脂組成物及びその硬化物
WO2016021511A1 (ja) * 2014-08-08 2016-02-11 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
JP2016106083A (ja) * 2010-07-30 2016-06-16 三菱瓦斯化学株式会社 化合物、感放射線性組成物及びレジストパターン形成方法
WO2016140081A1 (ja) * 2015-03-03 2016-09-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法
WO2016147989A1 (ja) * 2015-03-13 2016-09-22 三菱瓦斯化学株式会社 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、パターン形成方法、及び、化合物又は樹脂の精製方法
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KR20160134682A (ko) 2014-03-13 2016-11-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성재료, 리소그래피용 하층막, 패턴 형성방법, 및 화합물 또는 수지의 정제방법
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US10323159B2 (en) 2015-06-02 2019-06-18 Samsung Sdi Co., Ltd. Organic layer composition and method of forming patterns
US10364314B2 (en) 2015-07-22 2019-07-30 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method
WO2019151403A1 (ja) * 2018-01-31 2019-08-08 三菱瓦斯化学株式会社 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
US10437148B2 (en) 2014-05-08 2019-10-08 Mitsubishi Gas Chemical Company, Inc. Resist material, resist composition and method for forming resist pattern
WO2019208761A1 (ja) 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 レジスト下層膜形成用組成物及びパターン形成方法
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EP3623867A1 (en) 2018-09-13 2020-03-18 Shin-Etsu Chemical Co., Ltd. Patterning process
US10642156B2 (en) 2015-03-30 2020-05-05 Mitsubishi Gas Chemical Company, Inc. Resist base material, resist composition and method for forming resist pattern
US10747112B2 (en) 2015-03-30 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method
WO2020241576A1 (ja) * 2019-05-27 2020-12-03 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法および精製方法
KR20210093904A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210093903A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
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US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
KR20210138611A (ko) 2019-03-19 2021-11-19 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성 재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막, 패턴 형성방법, 및 정제방법
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
CN116813852A (zh) * 2023-03-16 2023-09-29 嘉庚创新实验室 用于光刻介质组合物的化合物、聚合物以及光刻介质组合物
KR20230152680A (ko) 2021-03-02 2023-11-03 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 조성물, 리소그래피용 하층막, 및 패턴 형성방법
US11852970B2 (en) 2015-08-24 2023-12-26 Mitsubishi Gas Chemical Company, Inc. Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101432605B1 (ko) 2010-12-16 2014-08-21 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101423171B1 (ko) 2010-12-30 2014-07-25 제일모직 주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
MY157470A (en) 2011-03-29 2016-06-15 Mitsubishi Gas Chemical Co Prepreg, metal foil-clad laminate, and printecd wiring board
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP5698184B2 (ja) * 2011-09-02 2015-04-08 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5698185B2 (ja) * 2011-09-06 2015-04-08 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
KR101873018B1 (ko) * 2011-11-02 2018-07-03 주식회사 동진쎄미켐 페놀계 단량체, 이를 포함하는 레지스트 하층막 형성용 고분자 및 이를 포함하는 레지스트 하층막 조성물
WO2013129313A1 (ja) * 2012-02-27 2013-09-06 三菱瓦斯化学株式会社 酸性処理したモノアルキルナフタレンホルムアルデヒド樹脂
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
WO2014024836A1 (ja) * 2012-08-10 2014-02-13 日産化学工業株式会社 レジスト下層膜形成組成物
KR102165966B1 (ko) * 2013-02-20 2020-10-15 도오꾜오까고오교 가부시끼가이샤 하지제 및 패턴 형성 방법
CN105209974B (zh) * 2013-05-13 2020-05-29 日产化学工业株式会社 含有使用双酚醛的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
WO2015008560A1 (ja) * 2013-07-19 2015-01-22 Dic株式会社 フェノール性水酸基含有化合物、感光性組成物、レジスト用組成物、レジスト塗膜、硬化性組成物、レジスト下層膜用組成物、及びレジスト下層膜
KR102364126B1 (ko) * 2014-03-24 2022-02-18 제이에스알 가부시끼가이샤 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물
US9583358B2 (en) 2014-05-30 2017-02-28 Samsung Electronics Co., Ltd. Hardmask composition and method of forming pattern by using the hardmask composition
KR102287343B1 (ko) * 2014-07-04 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102287344B1 (ko) 2014-07-25 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
CN107207259A (zh) * 2014-10-08 2017-09-26 亚历克斯·菲利普·格雷厄姆·罗宾逊 旋涂硬掩膜材料
TWI675051B (zh) 2014-10-10 2019-10-21 日商迪愛生股份有限公司 萘酚型杯芳烴化合物及其製造方法、感光性組成物、光阻材料、及塗膜
WO2016072316A1 (ja) * 2014-11-04 2016-05-12 日産化学工業株式会社 アリーレン基を有するポリマーを含むレジスト下層膜形成組成物
CN107111229B (zh) * 2015-01-16 2020-11-27 Dic株式会社 抗蚀永久膜用固化性组合物及抗蚀永久膜
JP6641879B2 (ja) * 2015-03-03 2020-02-05 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
US20170137663A9 (en) * 2015-03-03 2017-05-18 Jsr Corporation Composition for resist underlayer film formation, resist underlayer film, and production method of patterned substrate
KR102384226B1 (ko) 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
KR102463893B1 (ko) 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR20240024284A (ko) * 2015-12-01 2024-02-23 닛산 가가쿠 가부시키가이샤 인돌로카바졸노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
WO2017111165A1 (ja) * 2015-12-25 2017-06-29 三菱瓦斯化学株式会社 化合物、樹脂、組成物、レジストパターン形成方法、及び、回路パターン形成方法
US20200321533A1 (en) * 2016-05-24 2020-10-08 President And Fellows Of Harvard College Compounds for organic light emitting diode materials
TWI738761B (zh) * 2016-06-16 2021-09-11 南韓商東友精細化工有限公司 硬遮罩用組合物
JP6865047B2 (ja) * 2017-01-27 2021-04-28 東京応化工業株式会社 インプリント用下層膜形成用組成物及びパターン形成方法
KR102349937B1 (ko) * 2017-03-27 2022-01-10 동우 화인켐 주식회사 하드마스크용 조성물
US11034847B2 (en) 2017-07-14 2021-06-15 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
KR102433666B1 (ko) 2017-07-27 2022-08-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102486388B1 (ko) 2017-07-28 2023-01-09 삼성전자주식회사 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
US10684545B2 (en) 2017-11-17 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure by patterning assist layer having polymer
US20210200081A1 (en) * 2019-12-31 2021-07-01 Rohm And Haas Electronic Materials Llc Pattern formation methods
US20220334482A1 (en) * 2021-04-15 2022-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist top coating material for etching rate control
JP2023166976A (ja) * 2022-05-10 2023-11-22 信越化学工業株式会社 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000143937A (ja) * 1998-11-16 2000-05-26 Jsr Corp 反射防止膜形成組成物
JP2001040293A (ja) 1999-08-03 2001-02-13 Jsr Corp 反射防止膜形成組成物
JP2002014474A (ja) 2000-06-30 2002-01-18 Toshiba Corp パターン形成方法
JP2002214777A (ja) 2000-11-14 2002-07-31 Jsr Corp 反射防止膜形成組成物
JP2003155259A (ja) 2001-09-10 2003-05-27 Toyo Kasei Kogyo Co Ltd 芳香族アルデヒドの製造方法および新規な芳香族ジアルデヒド
JP2005156816A (ja) 2003-11-25 2005-06-16 Tokyo Ohka Kogyo Co Ltd 下地材及び多層レジストパターン形成方法
JP2006053543A (ja) 2004-07-15 2006-02-23 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JP2007017867A (ja) 2005-07-11 2007-01-25 Nissan Chem Ind Ltd フルオレン構造を有する化合物を含むリソグラフィー用下層膜形成組成物
WO2007105776A1 (ja) * 2006-03-14 2007-09-20 Jsr Corporation 下層膜形成用組成物及びパターン形成方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2597159A (en) 1950-04-27 1952-05-20 Pan American Refining Corp Condensation of aromatic hydrocarbons with formaldehyde catalyzed by formic acid
US3178393A (en) 1960-08-10 1965-04-13 Velsicol Chemical Corp Formaldehyde-aromatic hydrocarbon condensation product prepared with a hydrocarbon sulfonic acid
US3453220A (en) * 1967-08-14 1969-07-01 Sun Oil Co Poly (methylenenaphthylene) resin and method of making same
US4110279A (en) * 1974-02-25 1978-08-29 The Dow Chemical Company High temperature polymers from methoxy functional ether aromatic monomers
AR207158A1 (es) * 1974-09-05 1976-09-15 Hoechst Ag Agente dispersante para la reparticion en fino y la estabilizacion de colorantes pigmentos y blanqueadores obticos y las dispersiones asi obtenidas
US4395498A (en) * 1981-09-18 1983-07-26 Minnesota Mining And Manufacturing Company High temperature phenolic resins and friction elements prepared therefrom
DE3525848A1 (de) * 1985-07-19 1987-01-22 Hoechst Ag Verfahren zur isolierung von p-hydroxybenzaldehyd
JPS6397615A (ja) * 1986-10-15 1988-04-28 Sumitomo Metal Ind Ltd 変性多環芳香族縮合物とその樹脂の製造法
JPS6397614A (ja) * 1986-10-15 1988-04-28 Sumitomo Metal Ind Ltd 変性多環芳香族樹脂の製造方法
KR100687395B1 (ko) * 1999-08-31 2007-02-27 신닛테츠가가쿠 가부시키가이샤 방향족 올리고머 및 그의 용도
DE60105523T2 (de) * 2000-11-14 2005-09-29 Jsr Corp. Antireflektionsbeschichtungszusammensetzung
US8030431B2 (en) * 2001-10-19 2011-10-04 Lonza Ag Hardenable cyanate compositions
CN1263780C (zh) * 2001-12-27 2006-07-12 新日铁化学株式会社 芳香族低聚物的制备方法
JP2004091550A (ja) * 2002-08-30 2004-03-25 Sumitomo Bakelite Co Ltd フェノール樹脂及びその製造方法、並びにエポキシ樹脂硬化剤
US7819938B2 (en) * 2004-12-22 2010-10-26 The United States Of America As Represented By The Secretary Of The Navy Highly aromatic compounds and polymers as precursors to carbon nanotube and metal nanoparticle compositions in shaped solids
TWI495632B (zh) * 2004-12-24 2015-08-11 Mitsubishi Gas Chemical Co 光阻用化合物
JP5033791B2 (ja) * 2005-05-23 2012-09-26 ファディア・アクチボラグ 二段階側流分析法および装置
JP2009098155A (ja) * 2006-02-08 2009-05-07 Mitsubishi Gas Chem Co Inc 感放射線性組成物
TW200741353A (en) * 2006-02-27 2007-11-01 Mitsubishi Gas Chemical Co Compound for forming antireflective film and antireflective film
JP2007326847A (ja) * 2006-03-31 2007-12-20 Honshu Chem Ind Co Ltd 新規な多核体ポリフェノール化合物
JP5446118B2 (ja) * 2007-04-23 2014-03-19 三菱瓦斯化学株式会社 感放射線性組成物
JP5045483B2 (ja) * 2007-09-21 2012-10-10 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
EP2236530B1 (en) * 2007-12-07 2013-10-09 Mitsubishi Gas Chemical Company, Inc. Modified naphthalene formaldehyde resin, tricyclodecane skeleton-containing naphthol compound and ester compound
US8645507B2 (en) * 2008-11-05 2014-02-04 Siemens Enterprise Communications, Inc. Power management for a communications system
JP5177418B2 (ja) * 2008-12-12 2013-04-03 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP2011227492A (ja) * 2010-03-30 2011-11-10 Dainippon Printing Co Ltd ネガ型レジスト組成物、並びに、当該レジスト組成物を用いたレリーフパターンの製造方法及び電子部品

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000143937A (ja) * 1998-11-16 2000-05-26 Jsr Corp 反射防止膜形成組成物
JP2001040293A (ja) 1999-08-03 2001-02-13 Jsr Corp 反射防止膜形成組成物
JP2002014474A (ja) 2000-06-30 2002-01-18 Toshiba Corp パターン形成方法
JP2002214777A (ja) 2000-11-14 2002-07-31 Jsr Corp 反射防止膜形成組成物
JP2003155259A (ja) 2001-09-10 2003-05-27 Toyo Kasei Kogyo Co Ltd 芳香族アルデヒドの製造方法および新規な芳香族ジアルデヒド
JP2005156816A (ja) 2003-11-25 2005-06-16 Tokyo Ohka Kogyo Co Ltd 下地材及び多層レジストパターン形成方法
JP2006053543A (ja) 2004-07-15 2006-02-23 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JP2007017867A (ja) 2005-07-11 2007-01-25 Nissan Chem Ind Ltd フルオレン構造を有する化合物を含むリソグラフィー用下層膜形成組成物
WO2007105776A1 (ja) * 2006-03-14 2007-09-20 Jsr Corporation 下層膜形成用組成物及びパターン形成方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PROCEEDINGS OF SPIE, vol. 4345, 2001, pages 50
See also references of EP2219076A4

Cited By (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009229666A (ja) * 2008-03-21 2009-10-08 Jsr Corp 下層膜形成用組成物及びそれを用いたパターン形成方法
JP2010122297A (ja) * 2008-11-17 2010-06-03 Mitsubishi Gas Chemical Co Inc リソグラフィー用下層膜形成組成物
JP2011037993A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂の製造方法
JP2011037992A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
JP2011046837A (ja) * 2009-08-27 2011-03-10 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
WO2011024967A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
US8883937B2 (en) 2009-08-31 2014-11-11 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, manufacturing method therefor, radiation-sensitive composition, and method for forming a resist pattern
WO2011034062A1 (ja) 2009-09-15 2011-03-24 三菱瓦斯化学株式会社 芳香族炭化水素樹脂及びリソグラフィー用下層膜形成組成物
EP2479198A1 (en) * 2009-09-15 2012-07-25 Mitsubishi Gas Chemical Company, Inc. Aromatic hydrocarbon resin and composition for forming underlayer film for lithography
EP2479198A4 (en) * 2009-09-15 2013-12-25 Mitsubishi Gas Chemical Co RESIN BASED ON AROMATIC HYDROCARBON AND COMPOSITION FOR FORMING SUSPENSION FILM FOR LITHOGRAPHY
JP2011081200A (ja) * 2009-10-07 2011-04-21 Mitsubishi Gas Chemical Co Inc 溶解抑止剤、ネガ型感放射線性組成物およびレジストパターン形成方法
WO2011099235A1 (ja) * 2010-02-12 2011-08-18 三菱瓦斯化学株式会社 下層膜材料及び多層レジストパターン形成方法
JP5880046B2 (ja) * 2010-02-12 2016-03-08 三菱瓦斯化学株式会社 レジスト下層膜材料及びレジスト下層膜
JP2016106083A (ja) * 2010-07-30 2016-06-16 三菱瓦斯化学株式会社 化合物、感放射線性組成物及びレジストパターン形成方法
WO2012036121A1 (ja) * 2010-09-14 2012-03-22 東京応化工業株式会社 下地剤及びブロックコポリマーを含む層のパターン形成方法
US8999631B2 (en) 2010-09-14 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Primer and pattern forming method for layer including block copolymer
WO2012090408A1 (ja) 2010-12-28 2012-07-05 三菱瓦斯化学株式会社 芳香族炭化水素樹脂、リソグラフィー用下層膜形成組成物及び多層レジストパターンの形成方法
US8741553B2 (en) 2010-12-28 2014-06-03 Mitsubishi Gas Chemical Company, Inc. Aromatic hydrocarbon resin, underlayer film forming composition for lithography, and method for forming multilayer resist pattern
KR20140031273A (ko) 2011-06-03 2014-03-12 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 페놀계 수지 및 리소그래피용 하층막 형성 재료
US9110373B2 (en) 2011-06-03 2015-08-18 Mitsubishi Gas Chemical Company, Inc. Phenolic resin and material for forming underlayer film for lithography
WO2012165507A1 (ja) 2011-06-03 2012-12-06 三菱瓦斯化学株式会社 フェノール系樹脂およびリソグラフィー用下層膜形成材料
TWI572596B (zh) * 2011-08-12 2017-03-01 三菱瓦斯化學股份有限公司 微影用下層膜形成材料、微影用下層膜及圖型形成方法
WO2013024779A1 (ja) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
US9316913B2 (en) 2011-08-12 2016-04-19 Mitsubishi Gas Chemical Company, Inc. Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method
US20140227887A1 (en) * 2011-09-06 2014-08-14 Dongjin Semichem Co., Ltd. Phenol-based self-crosslinking polymer and resist underlayer film composition including same
WO2013047106A1 (ja) 2011-09-30 2013-04-04 三菱瓦斯化学株式会社 フルオレン構造を有する樹脂及びリソグラフィー用下層膜形成材料
KR20150054791A (ko) 2012-09-10 2015-05-20 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물 및 패턴 형성 방법
US9696626B2 (en) 2012-09-10 2017-07-04 Jsr Corporation Composition for forming a resist underlayer film, and pattern-forming method
WO2014038680A1 (ja) 2012-09-10 2014-03-13 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US9400429B2 (en) 2012-09-10 2016-07-26 Jsr Corporation Composition for forming a resist underlayer film, and pattern-forming method
WO2014123107A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
KR20150113008A (ko) 2013-02-08 2015-10-07 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 및 패턴 형성방법
KR20150115793A (ko) 2013-02-08 2015-10-14 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 및 패턴 형성방법
US9809601B2 (en) 2013-02-08 2017-11-07 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US9828355B2 (en) 2013-02-08 2017-11-28 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
WO2014123102A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
JPWO2014123102A1 (ja) * 2013-02-08 2017-02-02 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
WO2014203866A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 樹脂組成物、プリプレグ、樹脂シート及び金属箔張り積層板
US10160824B2 (en) 2013-06-18 2018-12-25 Mitsubishi Gas Chemical Company, Inc. Cyanate ester compound, curable resin composition containing said compound, and cured product of said composition
JPWO2014203865A1 (ja) * 2013-06-18 2017-02-23 三菱瓦斯化学株式会社 シアン酸エステル化合物、該化合物を含む硬化性樹脂組成物及びその硬化物
JPWO2014203866A1 (ja) * 2013-06-18 2017-02-23 三菱瓦斯化学株式会社 樹脂組成物、プリプレグ、樹脂シート及び金属箔張り積層板
WO2014203865A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 シアン酸エステル化合物、該化合物を含む硬化性樹脂組成物及びその硬化物
KR20160134682A (ko) 2014-03-13 2016-11-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성재료, 리소그래피용 하층막, 패턴 형성방법, 및 화합물 또는 수지의 정제방법
US10294183B2 (en) 2014-03-13 2019-05-21 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin
US10303055B2 (en) 2014-03-13 2019-05-28 Mitsubishi Gas Chemical Company, Inc. Resist composition and method for forming resist pattern
US10437148B2 (en) 2014-05-08 2019-10-08 Mitsubishi Gas Chemical Company, Inc. Resist material, resist composition and method for forming resist pattern
KR20170008735A (ko) 2014-05-08 2017-01-24 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 막, 패턴 형성방법 및 정제방법
US10310377B2 (en) 2014-05-08 2019-06-04 Mitsubishi Gas Chemical Company, Inc. Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
WO2016021511A1 (ja) * 2014-08-08 2016-02-11 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
KR20170040253A (ko) 2014-08-08 2017-04-12 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
US10338471B2 (en) 2014-08-08 2019-07-02 Mitsubishi Gas Chemical Company, Inc. Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
JPWO2016021511A1 (ja) * 2014-08-08 2017-05-25 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
KR102413357B1 (ko) * 2014-08-08 2022-06-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
US20170349564A1 (en) 2014-12-25 2017-12-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
US10745372B2 (en) 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
WO2016140081A1 (ja) * 2015-03-03 2016-09-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法
JPWO2016140081A1 (ja) * 2015-03-03 2017-12-14 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法
KR20170127489A (ko) 2015-03-06 2017-11-21 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성재료, 리소그래피용 하층막, 패턴 형성방법 및 화합물 또는 수지의 정제방법
WO2016147989A1 (ja) * 2015-03-13 2016-09-22 三菱瓦斯化学株式会社 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、パターン形成方法、及び、化合物又は樹脂の精製方法
US10577323B2 (en) 2015-03-13 2020-03-03 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin
JP6028959B1 (ja) * 2015-03-13 2016-11-24 三菱瓦斯化学株式会社 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、パターン形成方法、及び、化合物又は樹脂の精製方法
US10642156B2 (en) 2015-03-30 2020-05-05 Mitsubishi Gas Chemical Company, Inc. Resist base material, resist composition and method for forming resist pattern
US10747112B2 (en) 2015-03-30 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
CN107430344A (zh) * 2015-04-07 2017-12-01 三菱瓦斯化学株式会社 光刻用下层膜形成用材料、光刻用下层膜形成用组合物、光刻用下层膜及图案形成方法
JPWO2016163456A1 (ja) * 2015-04-07 2018-02-08 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
KR20170135891A (ko) 2015-04-07 2017-12-08 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
US10359701B2 (en) 2015-04-07 2019-07-23 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
WO2016163456A1 (ja) * 2015-04-07 2016-10-13 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
CN107430344B (zh) * 2015-04-07 2021-03-26 三菱瓦斯化学株式会社 光刻用下层膜形成用材料、光刻用下层膜形成用组合物、光刻用下层膜及图案形成方法
CN107533297A (zh) * 2015-04-07 2018-01-02 三菱瓦斯化学株式会社 光刻用下层膜形成用材料、光刻用下层膜形成用组合物、光刻用下层膜及图案形成方法
WO2016163457A1 (ja) * 2015-04-07 2016-10-13 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
JP6052652B1 (ja) * 2015-04-07 2016-12-27 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
US10323159B2 (en) 2015-06-02 2019-06-18 Samsung Sdi Co., Ltd. Organic layer composition and method of forming patterns
US10364314B2 (en) 2015-07-22 2019-07-30 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method
US11852970B2 (en) 2015-08-24 2023-12-26 Mitsubishi Gas Chemical Company, Inc. Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11572430B2 (en) 2015-09-10 2023-02-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
JP6269904B1 (ja) * 2016-04-06 2018-01-31 Dic株式会社 ノボラック型樹脂の製造方法
KR20200008561A (ko) 2017-05-15 2020-01-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
WO2018212116A1 (ja) 2017-05-15 2018-11-22 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
WO2019004142A1 (ja) 2017-06-28 2019-01-03 三菱瓦斯化学株式会社 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法
KR20200022391A (ko) 2017-06-28 2020-03-03 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 막형성재료, 리소그래피용 막형성용 조성물, 광학부품 형성용 재료, 레지스트 조성물, 레지스트패턴 형성방법, 레지스트용 영구막, 감방사선성 조성물, 아몰퍼스막의 제조방법, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막의 제조방법 및 회로패턴 형성방법
KR20200078543A (ko) 2017-11-20 2020-07-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성용 조성물, 리소그래피용 막, 레지스트패턴형성방법, 및 회로패턴형성방법
WO2019098338A1 (ja) 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法
JPWO2019151403A1 (ja) * 2018-01-31 2021-02-12 三菱瓦斯化学株式会社 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法
JP7248956B2 (ja) 2018-01-31 2023-03-30 三菱瓦斯化学株式会社 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法
CN111630111A (zh) * 2018-01-31 2020-09-04 三菱瓦斯化学株式会社 组合物、以及抗蚀剂图案的形成方法和绝缘膜的形成方法
WO2019151403A1 (ja) * 2018-01-31 2019-08-08 三菱瓦斯化学株式会社 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法
KR20210005551A (ko) 2018-04-27 2021-01-14 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 하층막 형성용 조성물 및 패턴 형성방법
WO2019208761A1 (ja) 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 レジスト下層膜形成用組成物及びパターン形成方法
KR20210023845A (ko) 2018-06-26 2021-03-04 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
WO2020004316A1 (ja) 2018-06-26 2020-01-02 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
WO2020039966A1 (ja) 2018-08-20 2020-02-27 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
KR20210045357A (ko) 2018-08-20 2021-04-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
EP3623867A1 (en) 2018-09-13 2020-03-18 Shin-Etsu Chemical Co., Ltd. Patterning process
KR20210093842A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210093903A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
KR20210093904A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210138611A (ko) 2019-03-19 2021-11-19 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성 재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막, 패턴 형성방법, 및 정제방법
WO2020241576A1 (ja) * 2019-05-27 2020-12-03 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法および精製方法
KR20230152680A (ko) 2021-03-02 2023-11-03 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 조성물, 리소그래피용 하층막, 및 패턴 형성방법
CN116813852A (zh) * 2023-03-16 2023-09-29 嘉庚创新实验室 用于光刻介质组合物的化合物、聚合物以及光刻介质组合物
CN116813852B (zh) * 2023-03-16 2024-04-19 嘉庚创新实验室 用于光刻介质组合物的化合物、聚合物以及光刻介质组合物

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US20100316950A1 (en) 2010-12-16
US8592134B2 (en) 2013-11-26
JPWO2009072465A1 (ja) 2011-04-21
KR101397354B1 (ko) 2014-05-19
EP2219076A4 (en) 2012-03-14
KR20100095563A (ko) 2010-08-31
EP2219076B1 (en) 2013-11-20
JP5370158B2 (ja) 2013-12-18
TWI437370B (zh) 2014-05-11

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