TW200741353A - Compound for forming antireflective film and antireflective film - Google Patents

Compound for forming antireflective film and antireflective film

Info

Publication number
TW200741353A
TW200741353A TW096106839A TW96106839A TW200741353A TW 200741353 A TW200741353 A TW 200741353A TW 096106839 A TW096106839 A TW 096106839A TW 96106839 A TW96106839 A TW 96106839A TW 200741353 A TW200741353 A TW 200741353A
Authority
TW
Taiwan
Prior art keywords
antireflective film
compound
polyphenol
molecular weight
substrate
Prior art date
Application number
TW096106839A
Other languages
Chinese (zh)
Inventor
Dai Oguro
Masatoshi Echigo
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200741353A publication Critical patent/TW200741353A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Abstract

The present invention provides a compound for antireflective film comprising a polyphenol with specific structure and a solvent. The said polyphenol is obtained by the condensation reaction of at least one C6-20 aromatic aldehyde with a compound with C6-15 having 1~3 phenolic hydroxyl, wherein the molecular weight is 400~2000, the distribution of molecular weight (Mw/Mn) is 1~1.05, and the glass transition temperature is 110 DEG C or more. The antireflective film form on the substrate by using the said compound could absorb the reflective light from the substrate and the resist pattern forming performance which form on the said antireflective film could be promoted. The resist pattern edge roughness could be reduced because the said antireflective film has low sublimation and high dry etching resistance. Furthermore, the said antireflective film is soluble in the alkali developing solution, so it is no necessary to remove the antireflective film by specific dry etching treatment.
TW096106839A 2006-02-27 2007-02-27 Compound for forming antireflective film and antireflective film TW200741353A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006050251 2006-02-27

Publications (1)

Publication Number Publication Date
TW200741353A true TW200741353A (en) 2007-11-01

Family

ID=38437492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106839A TW200741353A (en) 2006-02-27 2007-02-27 Compound for forming antireflective film and antireflective film

Country Status (3)

Country Link
JP (1) JP5141549B2 (en)
TW (1) TW200741353A (en)
WO (1) WO2007097457A1 (en)

Cited By (1)

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TWI694996B (en) * 2015-03-13 2020-06-01 日商三菱瓦斯化學股份有限公司 Compound, resin, underlayer film-forming material for lithography, underlayer film-forming composition for lithography, underlayer film for lithography, pattern formation method, and mothod for purifying compound or resin

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JP4662063B2 (en) * 2006-05-25 2011-03-30 信越化学工業株式会社 Photoresist underlayer film forming material and pattern forming method
KR101397354B1 (en) * 2007-12-07 2014-05-19 미츠비시 가스 가가쿠 가부시키가이샤 Composition for forming base film for lithography and method for forming multilayer resist pattern
JP5257009B2 (en) * 2008-11-14 2013-08-07 Ｊｓｒ株式会社 Resist underlayer film forming composition, resist underlayer film forming method, and pattern forming method
KR101824285B1 (en) * 2010-09-29 2018-01-31 제이에스알 가부시끼가이샤 Pattern forming method, resist underlayer film, and composition for forming resist underlayer film
JP5598489B2 (en) * 2011-03-28 2014-10-01 信越化学工業株式会社 Biphenyl derivative, resist underlayer film material, resist underlayer film forming method and pattern forming method
EP2743770B1 (en) * 2011-08-12 2015-12-30 Mitsubishi Gas Chemical Company, Inc. Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method
WO2014030579A1 (en) * 2012-08-21 2014-02-27 日産化学工業株式会社 Composition for forming resist underlayer film, which contains novolac resin having polynuclear phenol
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
JP6388126B2 (en) 2013-02-08 2018-09-12 三菱瓦斯化学株式会社 COMPOUND, LITHOGRAPHIC LOWER FILM FORMING MATERIAL, LITHOGRAPHY LOWER FILM AND PATTERN FORMING METHOD
WO2014123102A1 (en) * 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method
KR20170099908A (en) * 2014-12-25 2017-09-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Compound, resin, underlayer film forming material for lithography, underlayer film for lithography, pattern forming method and purification method
WO2016158168A1 (en) 2015-03-31 2016-10-06 三菱瓦斯化学株式会社 Compound, resist composition, and method for forming resist pattern in which same is used
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
WO2017038643A1 (en) 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, and resist pattern forming method
WO2017038645A1 (en) 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, pattern forming method, resin, and purification method
KR20180050665A (en) 2015-09-10 2018-05-15 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 COMPOSITION, RESIN, RESIST COMPOSITION OR RADIATION RADIATIVE COMPOSITION, RESIST PATTERN FORMING METHOD, AMORPHOUS FILM PRODUCTION METHOD, LITHOGRAPHY ROW LAYER FILM FORMING MATERIAL, COMPOSITION FOR FORMING LITHOGRAPHY UNDERLAY FILM

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4206851B2 (en) * 2003-07-23 2009-01-14 Ｊｓｒ株式会社 Antireflection film forming composition and method for forming antireflection film
US7871751B2 (en) * 2004-04-15 2011-01-18 Mitsubishi Gas Chemical Company, Inc. Resist composition
JP2006098869A (en) * 2004-09-30 2006-04-13 Sumitomo Bakelite Co Ltd Photoresist composition
JP4687095B2 (en) * 2004-12-14 2011-05-25 三菱瓦斯化学株式会社 Resist compound and radiation-sensitive composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI694996B (en) * 2015-03-13 2020-06-01 日商三菱瓦斯化學股份有限公司 Compound, resin, underlayer film-forming material for lithography, underlayer film-forming composition for lithography, underlayer film for lithography, pattern formation method, and mothod for purifying compound or resin

Also Published As

Publication number Publication date
JPWO2007097457A1 (en) 2009-07-16
WO2007097457A1 (en) 2007-08-30
JP5141549B2 (en) 2013-02-13

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