TW200742940A - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
TW200742940A
TW200742940A TW096115136A TW96115136A TW200742940A TW 200742940 A TW200742940 A TW 200742940A TW 096115136 A TW096115136 A TW 096115136A TW 96115136 A TW96115136 A TW 96115136A TW 200742940 A TW200742940 A TW 200742940A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
cresol
novolac resin
circuit
diazide
Prior art date
Application number
TW096115136A
Other languages
Chinese (zh)
Other versions
TWI407253B (en
Inventor
Dong-Min Kim
Byung-Uk Kim
Dae-Yeon Park
Ju-Hyuk Kim
Ki-Sik Choi
Jeong-Won Kim
Ki-Beom Lee
Cheol-Ki Byeon
Moon-Soo Kim
Byong-Hoo Kim
Ja-Hoon Byun
Jae-Ho Shin
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200742940A publication Critical patent/TW200742940A/en
Application granted granted Critical
Publication of TWI407253B publication Critical patent/TWI407253B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)

Abstract

The photoresist composition used in the manufacture of a minute circuit such as a liquid crystal display circuit or a semiconductor integrated circuit comprises (a) a novolac resin represented by chemical formula (1), (b) a diazide-based photosensitive compound and (c) an organic solvent, wherein R is H, -OH or -3, and n is an integer of 3-20. The photoresist composition is excellent in pattern uniformity and heat resistance after a hard baking step. The novolac resin is performed by condensation polymerization of m-cresol, p-cresol and salicylic aldehyde.
TW096115136A 2006-05-08 2007-04-27 Photoresist composition TWI407253B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060041089A KR101324645B1 (en) 2006-05-08 2006-05-08 Photoresist composition

Publications (2)

Publication Number Publication Date
TW200742940A true TW200742940A (en) 2007-11-16
TWI407253B TWI407253B (en) 2013-09-01

Family

ID=38838513

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115136A TWI407253B (en) 2006-05-08 2007-04-27 Photoresist composition

Country Status (4)

Country Link
JP (1) JP5165273B2 (en)
KR (1) KR101324645B1 (en)
CN (1) CN101071267B (en)
TW (1) TWI407253B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101611350B (en) * 2007-02-13 2012-08-08 东丽株式会社 Positive-type photosensitive resin composition
KR101473877B1 (en) * 2007-12-13 2014-12-26 엘지디스플레이 주식회사 Ink composition
JP2009222733A (en) * 2008-01-25 2009-10-01 Rohm & Haas Electronic Materials Llc Photoresist comprising novolak resin blend
CN102346372A (en) * 2010-07-30 2012-02-08 奇美实业股份有限公司 Positive photosensitive resin composition and method for forming patterns by using same
JPWO2014069091A1 (en) * 2012-10-30 2016-09-08 住友ベークライト株式会社 Photosensitive resin composition, cured film, protective film, insulating film, and electronic device
TWI465851B (en) * 2013-02-22 2014-12-21 Chi Mei Corp Positive photosensitive resin composition and method for forming patterns by using the same
JP6138067B2 (en) * 2014-02-03 2017-05-31 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photoresist containing novolac resin blend
JP6451065B2 (en) * 2014-03-27 2019-01-16 住友ベークライト株式会社 Photosensitive resin composition, cured film, protective film, insulating film, and electronic device
CN106796400B (en) * 2014-10-14 2020-11-03 太阳油墨制造株式会社 Laminated structure
JP7318820B2 (en) * 2020-09-17 2023-08-01 Dic株式会社 Method for producing resist pattern, resist pattern, and positive photosensitive resin composition for producing transparent laminated member

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NO891062L (en) * 1988-03-31 1989-10-02 Thiokol Morton Inc POSITIVE PHOTOGRAPHIC COMPOSITION.
NO891063L (en) * 1988-03-31 1989-10-02 Thiokol Morton Inc NOVOLAK RESINES OF MIXED ALDEHYDES AND POSITIVE PHOTORESIST MATERIALS MADE FROM SUCH RESINES.
JPH02300752A (en) * 1989-05-16 1990-12-12 Mitsubishi Petrochem Co Ltd Positive type photoresist composition
JPH02300751A (en) * 1989-05-16 1990-12-12 Mitsubishi Petrochem Co Ltd Positive type photoresist composition
JP3125894B2 (en) * 1991-09-02 2001-01-22 東京応化工業株式会社 Positive photoresist composition
JP3377265B2 (en) * 1992-12-24 2003-02-17 住友化学工業株式会社 Method for producing photosensitive resin composition
JPH0859530A (en) * 1994-06-15 1996-03-05 Sumitomo Chem Co Ltd Polyhydroxy compound and positive type resist composition containing the same
JP3444689B2 (en) * 1995-04-03 2003-09-08 富士写真フイルム株式会社 Positive photoresist composition
DE69604114T2 (en) * 1995-04-10 2000-03-02 Shipley Co Mixtures of photoresist containing photoactive compositions
US5709977A (en) * 1995-07-13 1998-01-20 Fuji Photo Film Co., Ltd. Positive working photoresist composition
JPH09281703A (en) * 1996-04-16 1997-10-31 Nippon Zeon Co Ltd Positive type resist composition
JPH1115151A (en) * 1997-05-01 1999-01-22 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition for forming contact hole and method for forming contact hole
JPH11194490A (en) * 1998-01-07 1999-07-21 Konica Corp Photosensitive composition for lithographic printing plate
JPH11202485A (en) * 1998-01-08 1999-07-30 Konica Corp Photosensitive composition for planographic printing plate
JP2000029209A (en) * 1998-07-08 2000-01-28 Nippon Zeon Co Ltd Positive type resist composition and its preparation
JP2000029208A (en) * 1998-07-08 2000-01-28 Nippon Zeon Co Ltd Positive type resist composition
JP2002107925A (en) * 2000-09-28 2002-04-10 Sumitomo Bakelite Co Ltd Phenolic resin for photoresist
JP2002244285A (en) * 2001-02-20 2002-08-30 Jsr Corp Radiation sensitive resin composition
JP2002278060A (en) * 2001-03-16 2002-09-27 Jsr Corp Radiation sensitive resin composition
KR100846085B1 (en) * 2001-10-31 2008-07-14 주식회사 동진쎄미켐 Positive photoresist composition for liquid crystal device
KR100783603B1 (en) * 2002-01-05 2007-12-07 삼성전자주식회사 Photoresist Composition And Method of Forming Pattern Using The Same
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Also Published As

Publication number Publication date
JP5165273B2 (en) 2013-03-21
KR20070108714A (en) 2007-11-13
TWI407253B (en) 2013-09-01
JP2007304592A (en) 2007-11-22
CN101071267B (en) 2012-01-25
KR101324645B1 (en) 2013-11-01
CN101071267A (en) 2007-11-14

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