JP2002107925A - Phenolic resin for photoresist - Google Patents

Phenolic resin for photoresist

Info

Publication number
JP2002107925A
JP2002107925A JP2000295642A JP2000295642A JP2002107925A JP 2002107925 A JP2002107925 A JP 2002107925A JP 2000295642 A JP2000295642 A JP 2000295642A JP 2000295642 A JP2000295642 A JP 2000295642A JP 2002107925 A JP2002107925 A JP 2002107925A
Authority
JP
Japan
Prior art keywords
parts
weight
phenolic resin
photoresist
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000295642A
Other languages
Japanese (ja)
Inventor
Osamu Onishi
治 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2000295642A priority Critical patent/JP2002107925A/en
Publication of JP2002107925A publication Critical patent/JP2002107925A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a phenolic resin for photoresist having high heat resistance, high resolution and high sensitivity. SOLUTION: The phenolic resin is a novolak type phenolic resin obtained by reacting phenols (P) comprising 30-70 wt.% m-cresol, 5-40 wt.% p-cresol and 5-50 wt.% xylenol and/or trimethylphenol with aldehydes (F) comprising formaldehyde (f1) and aromatic aldehydes (f2) in an f1 to f2 weight ratio of (1:9) to (9:1). The inertial radius (molecular size) of the novolak type phenolic resin is 1.50-2.50 nm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体やLCDな
どを製造する際のリソグラフィ−に使用されるフォトレ
ジスト用として、高耐熱性、高残膜率、高感度、高解像
度なフォトレジストの製造を可能にするフェノ−ル樹脂
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of a photoresist having high heat resistance, high residual film ratio, high sensitivity, and high resolution for a photoresist used for lithography in producing semiconductors and LCDs. The present invention relates to a phenol resin which enables the following.

【0002】[0002]

【従来の技術】一般にポジ型フォトレジストはナフトキ
ノンジアジド化合物等のキノンジアジド基を有する感光
剤とアルカリ可溶性樹脂(例えばノボラック型フェノ−
ル樹脂)が用いられる。このような組成からなるポジ型
フォトレジストはアルカリ溶液による現像によって高い
解像力を示し、IC、LSI等の半導体製造、LCDな
どの回路基材の製造に利用されている。またノボラック
型フェノ−ル樹脂は露光後のプラズマドライエッチング
に対し、芳香環を多く持つ構造に起因する高い耐熱性も
有しており、これまでノボラック型フェノ−ル樹脂とナ
フトキノンジアジド系感光剤とを含有する数多くのポジ
型フォトレジストが開発、実用化され、大きな成果を挙
げてきている。
2. Description of the Related Art In general, a positive photoresist is composed of a sensitizer having a quinonediazide group such as a naphthoquinonediazide compound and an alkali-soluble resin (for example, a novolak-type phenol resin).
Resin) is used. Positive photoresists having such a composition exhibit high resolving power upon development with an alkaline solution, and are used in the manufacture of semiconductors such as ICs and LSIs and the manufacture of circuit substrates such as LCDs. In addition, novolak type phenolic resin also has high heat resistance to plasma dry etching after exposure due to the structure having many aromatic rings, so far novolak type phenolic resin and naphthoquinonediazide-based photosensitizer Numerous positive-type photoresists containing have been developed and put into practical use, and have achieved great results.

【0003】一般にフォトレジスト用フェノ−ル樹脂と
して、メタ・パラクレゾ−ルとホルムアルデヒドを酸触
媒の存在下で反応させて得られたフェノ−ル樹脂が使用
されている。フォトレジストの特性を調整または向上さ
せるために、メタ・パラクレゾ−ルの比率や分子量など
の検討がなされ、半導体やLCDなどのリソグラフィ−
技術に適用されてきた。半導体用フォトレジストでは、
高耐熱性・高解像度・高感度などの特性が要求されてお
り、耐熱性向上のためにキシレノ−ル,トリメチルフェ
ノ−ルなどのアルキルフェノ−ル類が検討された例があ
るが、若干の向上効果は得られるものの、十分な効果は
得られなかった。
Generally, a phenol resin obtained by reacting meta-paracresol and formaldehyde in the presence of an acid catalyst is used as a phenol resin for a photoresist. In order to adjust or improve the characteristics of photoresist, the ratio and molecular weight of meta-paracresol have been studied.
Technology has been applied. In semiconductor photoresists,
Characteristics such as high heat resistance, high resolution, and high sensitivity are required. Alkyl phenols such as xylenol and trimethylphenol have been studied to improve heat resistance. Although an improvement effect was obtained, a sufficient effect was not obtained.

【0004】近年、半導体の高集積化の要求が非常に高
く、それに伴いフォトレジストの高解像度化の要求が非
常に高くなってきている。高解像度化のために、使用さ
れるフェノ−ル樹脂の改良として、ハイオルソ化樹脂な
どが検討された例があるが、耐熱性が劣ることなどが原
因で実用化にはいたっていない。また、種々のモノマ−
類が検討された例が見受けられるが、いずれも一長一短
があり実用化まで至っていない。
In recent years, there has been an extremely high demand for high integration of semiconductors, and accordingly, there has been an extremely high demand for high resolution of photoresists. In order to improve the resolution, a phenolic resin to be used has been studied to improve the phenolic resin, such as a high-ortho-modified resin. However, it has not been put to practical use due to poor heat resistance. In addition, various monomers
There are cases where the types have been studied, but all have their advantages and disadvantages and have not yet been put to practical use.

【0005】[0005]

【発明が解決しようとする課題】本発明は、高耐熱性・
高解像度・高感度を兼ね備えたフォトレジストの製造を
可能にするフェノール樹脂を提供することを目的とす
る。
DISCLOSURE OF THE INVENTION The present invention has a high heat resistance.
It is an object of the present invention to provide a phenol resin that enables the production of a photoresist having both high resolution and high sensitivity.

【0006】[0006]

【課題を解決するための手段】本発明は、メタクレゾ−
ル30−70重量%とパラクレゾール5−40重量%,
キシレノール及び/又はトリメチルフェノール5−50
重量%からなるフェノール類(P)と、ホルムアルデヒ
ド(f1)と芳香族アルデヒド類(f2)からなり、そ
の重量比(f1/f2)が1/9−9/1であるアルデ
ヒド類(F)とを反応させて得られるノボラック型フェ
ノール樹脂であって、当該ノボラック型フェノール樹脂
の慣性半径(分子サイズ)が1.50−2.50nmで
あることを特長とするフォトレジスト用フェノール樹脂
に関するものである。
DISCLOSURE OF THE INVENTION The present invention provides a metacreso-
30-70% by weight and para-cresol 5-40% by weight,
Xylenol and / or trimethylphenol 5-50
And aldehydes (F) consisting of formaldehyde (f1) and aromatic aldehydes (f2) at a weight ratio (f1 / f2) of 1 / 9-9 / 1. A phenolic resin for a photoresist, characterized in that the radius of inertia (molecular size) of the novolak phenolic resin is 1.50-2.50 nm. .

【0007】[0007]

【発明の実施の形態】以下、本発明について詳細に説明
する。まず本発明に使用される原料について説明する。
フェノ−ル類としては、メタクレゾ−ル、パラクレゾ−
ル、キシレノール及びトリメチルフェノールが使用でき
る。キシレノールは2,3−キシレノ−ル,2,4−キ
シレノ−ル,2,5−キシレノ−ル,2,6−キシレノ
−ル,3,4−キシレノ−ル,3,5−キシレノ−ルが
使用でき、単独でも2種以上を混合使用してもよい。ト
リメチルフェノ−ルは、2,3,5−トリメチルフェノ
−ル、2,3,6−トリメチルフェノ−ル、3,4,5
−トリメチルフェノールが使用でき、単独でも2種を混
合使用してもよい。フェノ−ル類におけるメタクレゾ−
ルの割合は30−70重量%で35−65重量%が特に
好ましい。メタクレゾールが30重量%未満であると感
度を損ない、70重量%を超えると解像度が低下する。
パラクレゾ−ルの割合は、5−40重量%で10−35
重量%が特に好ましい。5重量%未満であるとパターン
形状が劣化し、40重量%を超えると感度が低下する。
キシレノール及び/又はトリメチルフェノ−ルの割合
は、5−50重量%で10−45重量%が特に好まし
い。キシレノール及び/又はトリメチルフェノールが5
重量%未満であると耐熱性が低下し、50重量%を超え
ると感度が低下する
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. First, the raw materials used in the present invention will be described.
Phenols include meta-cresol and para-cresol.
, Xylenol and trimethylphenol can be used. Xylenol includes 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, and 3,5-xylenol. They may be used alone or in combination of two or more. Trimethylphenol is 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, 3,4,5
-Trimethylphenol can be used, and it may be used alone or as a mixture of two kinds. Metacresol in phenols
The proportion of toluene is 30-70% by weight, and particularly preferably 35-65% by weight. If the amount of meta-cresol is less than 30% by weight, the sensitivity is impaired, and if it exceeds 70% by weight, the resolution is reduced.
The proportion of paracresol is 10-35 at 5-40% by weight.
% By weight is particularly preferred. If it is less than 5% by weight, the pattern shape is deteriorated, and if it exceeds 40% by weight, the sensitivity is reduced.
The proportion of xylenol and / or trimethylphenol is preferably 5 to 50% by weight and particularly preferably 10 to 45% by weight. 5 xylenol and / or trimethylphenol
If the amount is less than 50% by weight, heat resistance decreases, and if it exceeds 50% by weight, sensitivity decreases.

【0008】アルデヒド類としては、ホルムアルデヒド
(f1)、芳香族アルデヒド類(f2)が混合使用され
るが、その比率は重量比(f1/f2)で9/1−1/
9で、特に8/2−2/8が好ましい。ホルムアルデヒ
ドは、ホルマリン(水溶液)でもパラホルムアルデヒド
(固形)どちらを使用してもよく、単独でも混合使用し
ても良い。ホルムアルデヒド(f1)の重量比が9を超
えると耐熱性が低下することになり、1を下回ると感度
が低下することになる。芳香族アルデヒド類としてはサ
リチルアルデヒド(o−ヒドロキシベンズアルデヒ
ド)、p−ヒドロキシベンズアルデヒド、m−ヒドロキ
シベンズアルデヒド、ベンズアルデヒド、バニリン、チ
モール、アネトール、オイゲノール、サフロール、ナフ
トアルデヒドなどがあげられるが、これらに限定される
わけではなく芳香族アルデヒドであれば使用可能であ
る。また、モノマーとしての反応性、解像度向上の観点
から、芳香族アルデヒドはサリチルアルデヒドが最も好
ましいが、特に限定されるわけではない。アルデヒド類
とフェノ−ル類のモル比率は0.1−0.9であり、好
ましくは0.2−0.8である。
As aldehydes, formaldehyde (f1) and aromatic aldehydes (f2) are mixed and used, and their ratio is 9 / 1-1 / 1 in weight ratio (f1 / f2).
9, particularly preferably 8 / 2−2 / 8. Formaldehyde may be either formalin (aqueous solution) or paraformaldehyde (solid), and may be used alone or in combination. If the weight ratio of formaldehyde (f1) exceeds 9, the heat resistance will decrease, and if it is less than 1, the sensitivity will decrease. Examples of aromatic aldehydes include, but are not limited to, salicylaldehyde (o-hydroxybenzaldehyde), p-hydroxybenzaldehyde, m-hydroxybenzaldehyde, benzaldehyde, vanillin, thymol, anethole, eugenol, safrole, naphthaldehyde, and the like. However, any aromatic aldehyde can be used. Salicylaldehyde is most preferred as the aromatic aldehyde from the viewpoint of reactivity as a monomer and improvement in resolution, but is not particularly limited. The molar ratio between aldehydes and phenols is 0.1-0.9, preferably 0.2-0.8.

【0009】本発明のフォトレジスト用フェノール樹脂
の合成に使用される酸触媒としては、ベンゼンスルホン
酸、パラトルエンスルホン酸、メタンスルホン酸などの
有機スルホン酸、塩酸、硫酸などの無機酸などを使用す
ることができるが、特に限定されることはなく、芳香族
アルデヒドとフェノ−ル類を反応させる能力のあるもの
であれば使用可能である。使用量は、フェノ−ル類に対
して0.01重量%から5重量%であるが、フォトレジ
スト用レジンの特性のために極力少ない方が好ましい。
樹脂中に酸触媒が残存するとフォトレジストの特性に弊
害を及ぼすため、アミン類を使用して酸触媒を中和する
ことが好ましい。中和のためのアミン類としては、トリ
メチルアミン、トリエチルアミン、ジエチルアミン、ト
リブチルアミンなどを使用することができるが、特に限
定されることはなく、酸触媒を中和し、水に可溶となる
塩を形成するものであれば使用可能である。使用量は酸
触媒の量にもよるが、酸触媒を中和し、反応系内のpH
が4−7の範囲に入るような量で使用することが好まし
い。反応溶媒は、必要によって使用することが可能であ
るが、特に種類が限定されるわけではなく、フェノ−ル
樹脂を溶解し、反応して得られた樹脂の粘度を低下させ
るものであれば使用可能である。
As the acid catalyst used for synthesizing the phenolic resin for a photoresist of the present invention, organic sulfonic acids such as benzenesulfonic acid, paratoluenesulfonic acid and methanesulfonic acid, and inorganic acids such as hydrochloric acid and sulfuric acid are used. There is no particular limitation, and any material capable of reacting an aromatic aldehyde with phenols can be used. The amount used is from 0.01% by weight to 5% by weight based on the phenols, but is preferably as small as possible because of the properties of the photoresist resin.
Since residual acid catalyst in the resin adversely affects the properties of the photoresist, it is preferable to use an amine to neutralize the acid catalyst. As amines for neutralization, trimethylamine, triethylamine, diethylamine, tributylamine and the like can be used, but there is no particular limitation, and a salt that neutralizes an acid catalyst and becomes soluble in water is used. Any material that can be formed can be used. The amount used depends on the amount of the acid catalyst, but the acid catalyst is neutralized and the pH in the reaction system is reduced.
Is preferably used in such an amount that falls within the range of 4-7. The reaction solvent can be used if necessary, but the type of the solvent is not particularly limited, and any solvent can be used as long as it dissolves the phenol resin and reduces the viscosity of the resin obtained by the reaction. It is possible.

【0010】続いて本発明における樹脂の特性である重
量平均分子量及び慣性半径について説明する。重量平均
分子量はゲルパ−ミエ−ションクロマトグラフィ−(G
PC測定)によりポリスチレン標準物質を用いて作成し
た検量線をもとに計算されたものである。慣性半径は差
圧粘度、屈折及び光散乱検出器の測定結果から作成され
るMark−Houwink Plotを用いて、重量
平均分子量1000−40000を計算範囲として算出
されるものである。GPC測定はテトラヒドロフランを
溶出溶媒として使用し、流量1.0ml/分、カラム温
度40℃の条件で実施した。本体:TOSOH製HLC
−8120、検出器:VISCOTEK製TDA−30
0トリプル検出器(差圧粘度検出器、屈折検出器、光散
乱検出器)、分析用カラム:TOSOH製TSK−GE
L G1000HXL1本、G2000HXL 2本、
G3000HXL 1本を使用した。
Next, the weight average molecular weight and the radius of gyration of the resin according to the present invention will be described. The weight average molecular weight is determined by gel permeation chromatography (G
PC measurement) based on a calibration curve prepared using a polystyrene standard substance. The radius of inertia is calculated using a Mark-Houwink Plot created from the measurement results of the differential pressure viscosity, refraction and light scattering detectors, with a weight average molecular weight of 1,000 to 40000 as a calculation range. The GPC measurement was performed using tetrahydrofuran as an elution solvent under the conditions of a flow rate of 1.0 ml / min and a column temperature of 40 ° C. Body: HLC made by TOSOH
-8120, detector: TDA-30 manufactured by VISCOTEK
0 triple detector (differential pressure viscosity detector, refraction detector, light scattering detector), analytical column: TSKOH-GE TSK-GE
L One G1000HXL, Two G2000HXL,
One G3000HXL was used.

【0011】本発明で製造可能なフォトレジスト用フェ
ノ−ル樹脂の重量平均分子量は、特に限定されることは
ないが、フォトレジストの性能や製造上のハンドリング
性から1500−15000であるのが特に好ましい。
重量平均分子量が1500未満であると感度が高すぎて
像が形成できない場合があり、15000を超えるとパ
ターン形状が劣化する場合がある。この重量平均分子量
にコントロ−ルする方法としては、アルデヒド類とフェ
ノ−ル類のモル比(A/P)で行うのが最も適切で目標
とする分子量により適宜設定できるが、A/P=0.2
−0.8が特に好ましい。また慣性半径については通常
1.50−2.50、特に1.80−2.40であるこ
とが好ましい。1.50を下回ると樹脂構造が2次元的
になり、耐熱性の低下を招く可能性が生じる。また2.
50を越えると樹脂構造が過剰な3次元構造を取ること
になり、感光剤との相互作用が立体的要因から有効に行
えず、解像度が低下する傾向にある。
The weight-average molecular weight of the phenolic resin for a photoresist which can be produced by the present invention is not particularly limited, but is preferably 1500-15000 in view of the performance of the photoresist and the handling property in production. preferable.
If the weight average molecular weight is less than 1500, the sensitivity may be too high to form an image, and if it exceeds 15,000, the pattern shape may be deteriorated. As a method for controlling the weight average molecular weight, the molar ratio (A / P) of aldehydes and phenols is most suitable and can be appropriately set according to the target molecular weight. .2
-0.8 is particularly preferred. The radius of inertia is usually preferably 1.50 to 2.50, particularly preferably 1.80 to 2.40. If the ratio is less than 1.50, the resin structure becomes two-dimensional, and there is a possibility that the heat resistance is reduced. Also 2.
If it exceeds 50, the resin structure will have an excessive three-dimensional structure, interaction with the photosensitive agent cannot be effectively performed due to three-dimensional factors, and the resolution tends to decrease.

【0012】さらに、本発明を反応手順に沿って説明す
る。反応は、攪拌機、温度計、熱交換機のついた反応釜
にフェノ−ル類、芳香族アルデヒド類、酸触媒を仕込み
一次反応を開始する。反応温度や時間はモノマ−の反応
性によって適宜設定できるが、安定かつ経済的に製造可
能なレベルとして反応時間で2−10時間、反応温度で
70−150℃が特に好ましい。また必要によって反応
溶媒を使用することもできる。反応終了後、ホルムアル
デヒド(ホルマリン及び/またはパラホルムアルデヒ
ド)を添加し、二次反応を行う。ホルムアルデヒドの添
加方法は、逐添法でも一括法でも可能であり、ホルムア
ルデヒドを添加する際に発生する発熱の程度により選択
することができる。二次反応の反応温度や時間は、製造
されるレジンの特性やモノマ−の反応性により適宜選択
できるが、安定かつ経済的に製造可能なレベルとして反
応時間で1−10時間、反応温度で50−150℃が特
に好ましい。また1次反応・2次反応時において、必要
によって反応溶媒を添加使用することもでき、特に溶媒
の種類は限定されないが、フェノ−ル樹脂を溶解する溶
媒が特に好ましい。
Further, the present invention will be described along the reaction procedure. In the reaction, a phenol, an aromatic aldehyde, and an acid catalyst are charged into a reactor equipped with a stirrer, a thermometer, and a heat exchanger to start a primary reaction. The reaction temperature and time can be appropriately set depending on the reactivity of the monomer. However, it is particularly preferable that the reaction time is 2 to 10 hours and the reaction temperature is 70 to 150 ° C. as stable and economical production. If necessary, a reaction solvent can be used. After completion of the reaction, formaldehyde (formalin and / or paraformaldehyde) is added to perform a secondary reaction. The method of adding formaldehyde can be either a sequential addition method or a batch method, and can be selected according to the degree of heat generated when formaldehyde is added. The reaction temperature and time of the secondary reaction can be appropriately selected depending on the properties of the resin to be produced and the reactivity of the monomer. However, the reaction time is 1 to 10 hours and the reaction temperature is 50 and 50 as stable and economical production levels. -150 ° C is particularly preferred. In the primary reaction and the secondary reaction, a reaction solvent can be added and used if necessary. The type of the solvent is not particularly limited, but a solvent that dissolves the phenol resin is particularly preferable.

【0013】水洗終了後、常圧下及び減圧下で脱水・脱
モノマ−を行い、フォトレジスト用フェノ−ル樹脂が得
られる。脱水・脱モノマ−後の反応釜からの取り出し温
度は、フェノ−ル樹脂の特性や樹脂の粘度などにより適
宜設定できるが、樹脂の安定性の観点から、150−2
50℃で行うのが特に好ましい。減圧度は、適宜設定で
きるが、0.1torrから200torr程度で行う
のが特に好ましい。
After the completion of the washing, dehydration and de-monomerization are carried out under normal pressure and reduced pressure to obtain a phenol resin for photoresist. The temperature at which the resin is taken out of the reaction vessel after dehydration and demonomerization can be appropriately set depending on the characteristics of the phenol resin, the viscosity of the resin, and the like.
It is particularly preferred to carry out at 50 ° C. Although the degree of pressure reduction can be set as appropriate, it is particularly preferable to perform the pressure reduction at about 0.1 to 200 torr.

【0014】反応終了後、酸触媒を中和するためにアミ
ン類を添加し、水を加えて水洗を実施する。水洗水の量
と回数は特に限定されないが、水洗回数は、1−5回程
度が実質的に影響ないレベルまで低下させることと経済
的観点から特に好ましい。また、水洗温度は、特に限定
されないが、触媒種除去の効率と作業性の観点から40
−95℃で行うのが好ましい。水洗中、樹脂と水洗水の
分離が悪い場合は、レジンの粘度を低下させる溶媒の添
加や水洗温度を上昇させることが効果的である。溶媒種
は特に限定されないが、フェノ−ル樹脂を溶解し、粘度
を低下させるものであれば使用することができる。
After the completion of the reaction, amines are added to neutralize the acid catalyst, and water is added, followed by washing with water. Although the amount and the number of times of washing water are not particularly limited, it is particularly preferable from the economical viewpoint that the number of times of washing is reduced to a level at which about 1 to 5 times does not substantially affect the washing. The washing temperature is not particularly limited, but may be 40 or less from the viewpoint of the efficiency of removing the catalyst species and the workability.
It is preferably carried out at -95 ° C. If the separation of the resin and the washing water is poor during washing, it is effective to add a solvent that reduces the viscosity of the resin or to increase the washing temperature. The type of the solvent is not particularly limited, but any solvent can be used as long as it dissolves the phenol resin and lowers the viscosity.

【0015】[0015]

【実施例】以下本発明を実施例により詳細に説明する。
ここに記載されている「部」及び「%」はすべて「重量
部」及び「重量%」を示し、本発明はこれら実施例によ
り何ら制約されるものではない。重量平均分子量及び慣
性半径は上述したように、GPC測定により求めたもの
である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments.
All “parts” and “%” described herein indicate “parts by weight” and “% by weight”, and the present invention is not limited by these examples. The weight average molecular weight and the radius of gyration were determined by GPC measurement as described above.

【0016】《実施例1》攪拌機、温度計、熱交換機の
ついた5Lの四つ口フラスコにメタクレゾ−ル850
部、パラクレゾ−ル510部、2,3,5−トリメチル
フェノ−ル340部、サリチルアルデヒド152部、パ
ラトルエンスルホン酸17部を仕込み、88〜92℃で
5時間反応を行った後、エチルセロソルブ680部を添
加して内温60℃まで冷却させ、次いで37%ホルマリ
ン823部を58−62℃で1.5時間で逐添し、さら
に30分反応させた。その後、段階的に昇温させ、最終
的に還流温度(97−103℃)で3時間反応させた。
反応終了後、90℃まで冷却してトリエチルアミン11
部を添加し、さらにアセトン170部、イオン交換水6
80部を添加して約70℃で攪拌・静置した。静置する
ことにより分離した分離水のpHを5.5−7.0とな
るように調整し、分離水を除去した。アセトン170
部、イオン交換水680部を使用して、この水洗操作を
もう一度繰り返した後、常圧下で内温140℃まで脱水
し、さらに80torrで195℃まで減圧下で脱水・
脱モノマ−を行い、フォトレジスト用フェノ−ル樹脂1
650gを得た。得られた樹脂の重量平均分子量は35
00、遊離モノマ−は、2.8%であった。また慣性半
径は1.88nmであった。
Example 1 Metacresol 850 was placed in a 5 L four-necked flask equipped with a stirrer, thermometer and heat exchanger.
Parts, 510 parts of paracresol, 340 parts of 2,3,5-trimethylphenol, 152 parts of salicylaldehyde and 17 parts of paratoluenesulfonic acid, and after reacting at 88 to 92 ° C. for 5 hours, ethyl cellosolve was added. 680 parts were added and the mixture was cooled to an internal temperature of 60 ° C, and 823 parts of 37% formalin were successively added at 58-62 ° C for 1.5 hours, and further reacted for 30 minutes. Thereafter, the temperature was increased stepwise, and finally the reaction was carried out at a reflux temperature (97-103 ° C) for 3 hours.
After completion of the reaction, the mixture was cooled to 90 ° C. and triethylamine 11
Of acetone, 170 parts of acetone and 6 parts of ion-exchanged water.
80 parts were added, and the mixture was stirred and allowed to stand at about 70 ° C. The pH of the separated water separated by standing was adjusted to 5.5 to 7.0, and the separated water was removed. Acetone 170
And 680 parts of ion-exchanged water, this water washing operation was repeated once, then dehydrated under normal pressure to an internal temperature of 140 ° C., and further dehydrated under reduced pressure to 195 ° C. at 80 torr.
De-monomerize, phenol resin for photoresist 1
650 g were obtained. The weight average molecular weight of the obtained resin is 35.
The free monomer was 2.8%. The radius of inertia was 1.88 nm.

【0017】《実施例2》攪拌機、温度計、熱交換機の
ついた5Lの四つ口フラスコにメタクレゾ−ル520
部、パラクレゾ−ル300部、3,5−キシレノール4
50部、サリチルアルデヒド90部、パラトルエンスル
ホン酸18部を仕込み、98〜102℃で4時間反応を
行った後、エチルセロソルブ250部を添加して内温6
0℃まで冷却させ、次いで37%ホルマリン600部を
58−62℃で1.5時間で逐添し、さらに30分反応
させた。その後、段階的に昇温させ、最終的に還流温度
(97−103℃)で2時間反応させた。反応終了後、
90℃まで冷却してトリエチルアミン12部を添加し、
さらにアセトン300部、イオン交換水900部を添加
して約70℃で攪拌・静置した。静置することにより分
離した分離水のpHを5.5−7.0となるように調整
し、分離水を除去した。アセトン300部、イオン交換
水900部を使用して、この水洗操作をもう一度繰り返
した後、常圧下で内温170℃まで脱水し、さらに80
torrで195℃まで減圧下で脱水・脱モノマ−を行
い、フォトレジスト用フェノ−ル樹脂1400gを得
た。得られた樹脂の重量平均分子量は4000、遊離モ
ノマ−は、4.0%であった。また慣性半径は1.91
nmであった。
Example 2 Metacresol 520 was placed in a 5 L four-necked flask equipped with a stirrer, thermometer and heat exchanger.
Parts, paracresol 300 parts, 3,5-xylenol 4
50 parts, 90 parts of salicylaldehyde and 18 parts of paratoluenesulfonic acid were charged and reacted at 98 to 102 ° C. for 4 hours.
After cooling to 0 ° C., 600 parts of 37% formalin were successively added at 58-62 ° C. for 1.5 hours, followed by a further reaction for 30 minutes. Thereafter, the temperature was raised stepwise, and finally the reaction was carried out at a reflux temperature (97-103 ° C) for 2 hours. After the reaction,
Cool to 90 ° C. and add 12 parts of triethylamine,
Further, 300 parts of acetone and 900 parts of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. The pH of the separated water separated by standing was adjusted to 5.5 to 7.0, and the separated water was removed. This washing operation was repeated once using 300 parts of acetone and 900 parts of ion-exchanged water, and then dehydrated under normal pressure to an internal temperature of 170 ° C.
Dehydration and demonomerization were performed under reduced pressure at 195 ° C. at Torr to obtain 1400 g of a phenol resin for photoresist. The weight average molecular weight of the obtained resin was 4000, and the free monomer was 4.0%. The radius of inertia is 1.91.
nm.

【0018】《実施例3》攪拌機、温度計、熱交換機の
ついた5Lの四つ口フラスコにメタクレゾ−ル600
部、パラクレゾ−ル600部、2,5−キシレノール3
00部、サリチルアルデヒド160部、パラトルエンス
ルホン酸18部を仕込み、98〜102℃で3時間反応
を行った後、エチルセロソルブ750部を添加して内温
60℃まで冷却させ、次いで37%ホルマリン800部
を98−102℃で2時間で逐添し、さらに30分反応
させた。その後、還流温度(97−103℃)で2時間
反応させた。反応終了後、90℃まで冷却してトリエチ
ルアミン13部を添加し、さらにアセトン150部、イ
オン交換水550部を添加して約70℃で攪拌・静置し
た。静置することにより分離した分離水のpHを5.5
−7.0となるように調整し、分離水を除去した。アセ
トン150部、イオン交換水550部を使用して、この
水洗操作をもう一度繰り返した後、常圧下で内温140
℃まで脱水し、さらに80torrで195℃まで減圧
下で脱水・脱モノマ−を行い、フォトレジスト用フェノ
−ル樹脂1650gを得た。得られた樹脂の重量平均分
子量は7200、遊離モノマ−は、2.5%であった。
また慣性半径は2.24nmであった。
Example 3 Metacresol 600 was placed in a 5 L four-necked flask equipped with a stirrer, thermometer and heat exchanger.
Parts, paracresol 600 parts, 2,5-xylenol 3
After 100 parts of salicylaldehyde, 160 parts of salicylaldehyde and 18 parts of p-toluenesulfonic acid were charged and reacted at 98 to 102 ° C. for 3 hours, 750 parts of ethyl cellosolve was added to cool to an internal temperature of 60 ° C., and then 37% formalin was added. 800 parts were added successively at 98-102 ° C. for 2 hours, and the mixture was further reacted for 30 minutes. Thereafter, the reaction was carried out at a reflux temperature (97-103 ° C.) for 2 hours. After the completion of the reaction, the mixture was cooled to 90 ° C., 13 parts of triethylamine was added, 150 parts of acetone and 550 parts of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. The pH of the separated water separated by standing is 5.5
Adjusted to -7.0, and separated water was removed. This washing operation was repeated once using 150 parts of acetone and 550 parts of ion-exchanged water.
At 195 ° C. under reduced pressure at 195 ° C. under reduced pressure to obtain 1650 g of a phenol resin for photoresist. The weight average molecular weight of the obtained resin was 7,200, and the free monomer was 2.5%.
The radius of inertia was 2.24 nm.

【0019】《実施例4》攪拌機、温度計、熱交換機の
ついた5Lの四つ口フラスコにメタクレゾ−ル1120
部、パラクレゾ−ル280部、2,3,6−トリメチル
フェノ−ル220部、ナフトアルデヒド320部、パラ
トルエンスルホン酸16部を仕込み、98〜102℃で
4時間反応を行った後、エチルセロソルブ650部を添
加して内温60℃まで冷却させ、次いで37%ホルマリ
ン730部を58−62℃で1.5時間で逐添し、さら
に30分反応させた。その後、段階的に昇温させ、最終
的に還流温度(97−103℃)で2時間反応させた。
反応終了後、90℃まで冷却してトリエチルアミン11
部を添加し、さらにアセトン150部、イオン交換水1
100部を添加して約70℃で攪拌・静置した。静置す
ることにより分離した分離水のpHを5.5−7.5と
なるように調整し、分離水を除去した。アセトン150
部、イオン交換水1100部を使用して、この水洗操作
をもう一度繰り返した後、常圧下で内温140℃まで脱
水し、さらに80torrで195℃まで減圧下で脱水
・脱モノマ−を行い、フォトレジスト用フェノ−ル樹脂
1600gを得た。得られた樹脂の重量平均分子量は5
300、遊離モノマ−は、1.8%であった。また慣性
半径は2.04nmであった。
Example 4 Metacresol 1120 was placed in a 5 L four-necked flask equipped with a stirrer, thermometer and heat exchanger.
Parts, 280 parts of paracresol, 220 parts of 2,3,6-trimethylphenol, 320 parts of naphthaldehyde and 16 parts of paratoluenesulfonic acid, and after reacting at 98 to 102 ° C. for 4 hours, ethyl cellosolve was added. 650 parts were added and the mixture was cooled to an internal temperature of 60 ° C., and 730 parts of 37% formalin were successively added at 58-62 ° C. for 1.5 hours, and further reacted for 30 minutes. Thereafter, the temperature was raised stepwise, and finally the reaction was carried out at a reflux temperature (97-103 ° C) for 2 hours.
After completion of the reaction, the mixture was cooled to 90 ° C. and triethylamine 11
And 150 parts of acetone and 1 part of ion-exchanged water.
100 parts were added and the mixture was stirred and allowed to stand at about 70 ° C. The pH of the separated water separated by standing was adjusted to 5.5 to 7.5, and the separated water was removed. Acetone 150
And 1100 parts of ion-exchanged water, this water washing operation was repeated once, then dehydrated under normal pressure to an internal temperature of 140 ° C., and further dehydrated and de-monomerized under reduced pressure at 195 ° C. at 80 torr. 1600 g of phenol resin for resist was obtained. The weight average molecular weight of the obtained resin is 5
300, 1.8% free monomer. The radius of inertia was 2.04 nm.

【0020】《比較例1》実施例1と同様の反応装置に
メタクレゾ−ル400部、パラクレゾ−ル600部、3
7%ホルマリン412.9部(仕込みモル比0.5
5)、蓚酸2部を仕込み、98〜102℃で4時間還流
反応を行った後、常圧下で脱水を行い内温140℃まで
上昇させ、次いで80Torr減圧下で脱水、脱モノマ
−を内温195℃になるまで行ない、フォトレジスト用
フェノ−ル樹脂を得た。得られたものの重量平均分子量
は2200、遊離モノマ−3.3%であった。また慣性
半径は1.52nmであった。
Comparative Example 1 400 parts of meta-cresol, 600 parts of para-cresol, 3 parts of the same reactor as in Example 1
412.9 parts of 7% formalin (charged molar ratio 0.5
5) After charging 2 parts of oxalic acid and performing a reflux reaction at 98 to 102 ° C. for 4 hours, dehydration is performed under normal pressure to raise the internal temperature to 140 ° C., and then dehydration is performed under a reduced pressure of 80 Torr to remove the monomer at the internal temperature. The process was continued until the temperature reached 195 ° C. to obtain a phenol resin for photoresist. The obtained product had a weight average molecular weight of 2,200 and a free monomer of -3.3%. The radius of inertia was 1.52 nm.

【0021】《比較例2》実施例1と同様の反応装置に
メタクレゾ−ル400部、パラクレゾ−ル600部、3
7%ホルマリン563.1部(仕込みモル比0.7
5)、蓚酸7部を仕込み、96〜100℃で5時間還流
反応を行った後、常圧下で脱水を行い、内温150℃ま
で上昇させ、次いで80Torrの減圧下で脱水、脱モ
ノマ−を内温195℃になるまで行い、フォトレジスト
用フェノ−ル樹脂を得た。得られたものの重量平均分子
量は9300、遊離モノマ−2.6%であった。また慣
性半径は2.78nmであった。
Comparative Example 2 400 parts of meta-cresol, 600 parts of para-cresol and 3 parts of the same reactor were used as in Example 1.
563.1 parts of 7% formalin (charged molar ratio 0.7
5) After charging 7 parts of oxalic acid and performing a reflux reaction at 96 to 100 ° C. for 5 hours, dehydration is performed under normal pressure, the internal temperature is raised to 150 ° C., and then dehydration and demonomerization are performed under a reduced pressure of 80 Torr. The operation was carried out until the internal temperature reached 195 ° C. to obtain a phenol resin for photoresist. The obtained product had a weight average molecular weight of 9,300 and a free monomer of 2.6%. The radius of inertia was 2.78 nm.

【0022】《比較例3》実施例1と同様の反応装置に
メタクレゾ−ル1020部、パラクレゾ−ル250部、
2,3,5−トリメチルフェノ−ル210部、サリチル
アルデヒド200部、パラトルエンスルホン酸16部を
仕込み、98〜102℃で4時間反応を行った後、エチ
ルセロソルブ700部を添加して内温60℃まで冷却さ
せ、次いで37%ホルマリン970部を58−62℃で
1.5時間で逐添し、さらに30分反応させた。その
後、段階的に昇温させ、最終的に還流温度(97−10
3℃)で2時間反応させた。反応終了後、90℃まで冷
却してトリエチルアミン11部を添加し、さらにアセト
ン150部、イオン交換水1200部を添加して約70
℃で攪拌・静置した。静置することにより分離した分離
水のpHを5.5−7.0となるように調整し、分離水
を除去した。アセトン150部、イオン交換水1200
部を使用して、この水洗操作をもう一度繰り返した後、
常圧下で内温140℃まで脱水し、さらに80torr
で195℃まで減圧下で脱水・脱モノマ−を行い、フォ
トレジスト用フェノ−ル樹脂1900gを得た。得られ
た樹脂の重量平均分子量は16800、遊離モノマ−
は、0.7%であった。また慣性半径は2.91nmで
あった。
Comparative Example 3 1020 parts of meta-cresol, 250 parts of para-cresol and the same reactor as in Example 1 were used.
After 210 parts of 2,3,5-trimethylphenol, 200 parts of salicylaldehyde and 16 parts of paratoluenesulfonic acid were charged and reacted at 98 to 102 ° C. for 4 hours, 700 parts of ethyl cellosolve was added and the mixture was heated at an internal temperature. After cooling to 60 ° C., 970 parts of 37% formalin were successively added at 58-62 ° C. for 1.5 hours, and the reaction was further performed for 30 minutes. Thereafter, the temperature is raised stepwise, and finally the reflux temperature (97-10
(3 ° C.) for 2 hours. After completion of the reaction, the mixture was cooled to 90 ° C., 11 parts of triethylamine was added, and 150 parts of acetone and 1200 parts of ion-exchanged water were added.
The mixture was stirred and allowed to stand at ℃. The pH of the separated water separated by standing was adjusted to 5.5 to 7.0, and the separated water was removed. 150 parts of acetone, 1200 parts of deionized water
After repeating this washing operation again using
Dehydrate to 140 ° C under normal pressure, and further 80 torr
Then, dehydration and demonomerization were performed under reduced pressure to 195 ° C. to obtain 1900 g of a phenol resin for photoresist. The weight average molecular weight of the obtained resin was 16,800, and the free monomer was
Was 0.7%. The radius of inertia was 2.91 nm.

【0023】《評価例1》耐熱性の評価方法 ノボラック型フェノ−ル樹脂100部とナフトキノン
1,2−ジアジド−5−スルホン酸の2,3,4−トリ
ヒドロキシベンゾフェノンエステル30部とを乳酸エチ
ルに溶解し、レジスト溶液を調合した。これらを0.2
ミクロンメンブレンフィルタ−で濾過し、レジスト液と
した。これを情報によって塗布し、110℃で90秒間
ホットプレ−ト上で乾燥させた。その後縮小投影露光装
置を用い、テストチャ−トマスクを介して露光し、現像
液(2.38%テトラメチルアンモニウムヒドロオキサ
イド水溶液)を用い、50秒間現像した。
Evaluation Example 1 Evaluation Method of Heat Resistance 100 parts of a novolak phenol resin and 30 parts of 2,3,4-trihydroxybenzophenone ester of naphthoquinone 1,2-diazido-5-sulfonic acid were mixed with ethyl lactate. And a resist solution was prepared. These are 0.2
The solution was filtered through a micron membrane filter to obtain a resist solution. This was applied by information and dried on a hot plate at 110 ° C. for 90 seconds. Thereafter, exposure was performed through a test chart mask using a reduction projection exposure apparatus, and development was performed for 50 seconds using a developing solution (2.38% aqueous solution of tetramethylammonium hydroxide).

【0024】得られたシリコンウエハ−を温度を変えた
ホットプレ−ト上で30分間放置し、シリコウエハ−上
のレジストパタ−ンの形状変化を走査型電子顕微鏡で観
察し耐熱性を評価した。
The obtained silicon wafer was allowed to stand on a hot plate at a varied temperature for 30 minutes, and the change in the shape of the resist pattern on the silicon wafer was observed with a scanning electron microscope to evaluate the heat resistance.

【0025】《評価例2》限界解像度・焦点深度の評価
方法 評価例1と同様に溶液調整、前処理、塗付、テストチャ
−トマスクによる露光・現像を行い、レジストパタ−ン
形状を走査型電子顕微鏡で観察した。焦点深度は、0.
30μmの線幅において焦点を変化させた時の写真を目
視で観察し、解像可能な焦点変動幅を測定した。また、
限界解像度は、最適露光・現像条件での写真から解像し
うる限界を目視で判定・測定した。
<< Evaluation Example 2 >> Evaluation method of critical resolution / depth of focus In the same manner as in Evaluation Example 1, solution preparation, pretreatment, coating, exposure and development using a test chart mask were performed, and the resist pattern shape was measured with a scanning electron microscope. Was observed. The depth of focus is 0.
A photograph when the focal point was changed at a line width of 30 μm was visually observed, and the resolvable focal point fluctuation width was measured. Also,
The limit resolution was visually determined and measured for the limit that can be resolved from a photograph under optimal exposure and development conditions.

【0026】[0026]

【表1】 [Table 1]

【0027】[0027]

【発明の効果】本発明により、従来の方法では得られな
かった高耐熱性・高解像度・高感度を両立するフォトレ
ジスト用フェノ−ル樹脂を提供することができるように
なった。本発明のフェノ−ル樹脂を使用することによっ
て得られたフォトレジストは、高集積な半導体を製造す
る際のリソグラフィ−に使用され、半導体の今後のさら
なる高集積化に役立つものと期待される。
According to the present invention, it has become possible to provide a phenolic resin for a photoresist which has high heat resistance, high resolution and high sensitivity, which cannot be obtained by the conventional method. The photoresist obtained by using the phenolic resin of the present invention is used for lithography when manufacturing a highly integrated semiconductor, and is expected to be useful for further increasing the integration of semiconductors in the future.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 メタクレゾ−ル30−70重量%とパラ
クレゾール5−40重量%,キシレノール及び/又はト
リメチルフェノール5−50重量%からなるフェノール
類(P)と、ホルムアルデヒド(f1)と芳香族アルデ
ヒド類(f2)からなり、その重量比(f1/f2)が
1/9−9/1であるアルデヒド類(F)とを反応させ
て得られるノボラック型フェノール樹脂であって、当該
ノボラック型フェノール樹脂の慣性半径(分子サイズ)
が1.50−2.50nmであることを特徴とするフォ
トレジスト用フェノール樹脂。
1. A phenol (P) comprising 30-70% by weight of meta-cresol, 5-40% by weight of para-cresol, 5-50% by weight of xylenol and / or trimethylphenol, formaldehyde (f1) and an aromatic aldehyde. A novolak phenol resin obtained by reacting an aldehyde (F) having a weight ratio (f1 / f2) of 1 / 9-9 / 1 with the aldehyde (f2), wherein the novolak phenol resin Radius of gyration (molecular size)
Is 1.50 to 2.50 nm.
【請求項2】 トリメチルフェノールが2,3,5−ト
リメチルフェノールである請求項1記載のフォトレジス
ト用フェノ−ル樹脂。
2. The phenolic resin for a photoresist according to claim 1, wherein the trimethylphenol is 2,3,5-trimethylphenol.
【請求項3】 芳香族アルデヒド類が2−ヒドロキシベ
ンズアルデヒド(サリチルアルデヒド)である請求項1
又は2記載のフォトレジスト用フェノ−ル樹脂。
3. The method according to claim 1, wherein the aromatic aldehyde is 2-hydroxybenzaldehyde (salicylaldehyde).
Or a phenolic resin for photoresist according to 2 above.
【請求項4】 ノボラック型フェノール樹脂の重量平均
分子量が1500−15000である請求項1乃至3の
いずれかに記載のフォトレジスト用フェノ−ル樹脂。
4. The phenolic resin for a photoresist according to claim 1, wherein the weight-average molecular weight of the novolak type phenolic resin is 1500-15000.
JP2000295642A 2000-09-28 2000-09-28 Phenolic resin for photoresist Pending JP2002107925A (en)

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JP2007304592A (en) * 2006-05-08 2007-11-22 Dongjin Semichem Co Ltd Photoresist composition
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JP2013186233A (en) * 2012-03-07 2013-09-19 Sumitomo Bakelite Co Ltd Photoresist resin composition
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US8927189B2 (en) 2013-02-27 2015-01-06 Samsung Display Co., Ltd. Photoresist composition and method of manufacturing display device using same
JP2016108425A (en) * 2014-12-04 2016-06-20 旭有機材工業株式会社 Method for producing novolac type phenolic resin and novolac type phenolic resin
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304592A (en) * 2006-05-08 2007-11-22 Dongjin Semichem Co Ltd Photoresist composition
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JP2013186233A (en) * 2012-03-07 2013-09-19 Sumitomo Bakelite Co Ltd Photoresist resin composition
JPWO2014069091A1 (en) * 2012-10-30 2016-09-08 住友ベークライト株式会社 Photosensitive resin composition, cured film, protective film, insulating film, and electronic device
WO2014069091A1 (en) * 2012-10-30 2014-05-08 住友ベークライト株式会社 Photosensitive resin composition, cured film, protective film, insulating film, and electronic device
US9464163B2 (en) 2012-12-26 2016-10-11 Central Glass Company, Limited Novolak resin containing hexafluoroisopropanol group, method for producing same, and composition of same
US8927189B2 (en) 2013-02-27 2015-01-06 Samsung Display Co., Ltd. Photoresist composition and method of manufacturing display device using same
JP2014214256A (en) * 2013-04-26 2014-11-17 明和化成株式会社 Photoresist resin and photoresist composition using the same
JP2016108425A (en) * 2014-12-04 2016-06-20 旭有機材工業株式会社 Method for producing novolac type phenolic resin and novolac type phenolic resin
KR20210093310A (en) 2019-01-21 2021-07-27 디아이씨 가부시끼가이샤 Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition and cured product

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