WO2009075265A1 - レジスト下層膜形成組成物及びレジストパターンの形成方法 - Google Patents

レジスト下層膜形成組成物及びレジストパターンの形成方法 Download PDF

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Publication number
WO2009075265A1
WO2009075265A1 PCT/JP2008/072334 JP2008072334W WO2009075265A1 WO 2009075265 A1 WO2009075265 A1 WO 2009075265A1 JP 2008072334 W JP2008072334 W JP 2008072334W WO 2009075265 A1 WO2009075265 A1 WO 2009075265A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
underlayer film
formation
resist underlayer
resist
Prior art date
Application number
PCT/JP2008/072334
Other languages
English (en)
French (fr)
Inventor
Yoshiomi Hiroi
Tomohisa Ishida
Takafumi Endo
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to JP2009545411A priority Critical patent/JP4984098B2/ja
Priority to KR1020107015429A priority patent/KR101372829B1/ko
Priority to US12/747,039 priority patent/US8361695B2/en
Priority to CN200880118921.0A priority patent/CN101884015B/zh
Publication of WO2009075265A1 publication Critical patent/WO2009075265A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/226—Mixtures of di-epoxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/38—Epoxy compounds containing three or more epoxy groups together with di-epoxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)

Abstract

【課題】ドライエッチング速度の選択比が大きく、ＡｒＦエキシマレーザーのような短波長でのｋ値及び屈折率ｎが所望の値を示し、さらに溶剤耐性を示すレジスト下層膜を形成するための組成物を提供する。 【解決手段】芳香環を含有する構造及び窒素原子を含有する構造の少なくとも一方を主鎖に有する線状ポリマー及び溶剤を含み、前記芳香環又は前記窒素原子は１つ以上のアルコキシアルキル基又はヒドロキシアルキル基が直結されていることを特徴とするリソグラフィー用レジスト下層膜形成組成物である。
PCT/JP2008/072334 2007-12-13 2008-12-09 レジスト下層膜形成組成物及びレジストパターンの形成方法 WO2009075265A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009545411A JP4984098B2 (ja) 2007-12-13 2008-12-09 レジスト下層膜形成組成物及びレジストパターンの形成方法
KR1020107015429A KR101372829B1 (ko) 2007-12-13 2008-12-09 레지스트 하층막 형성 조성물 및 레지스트패턴의 형성방법
US12/747,039 US8361695B2 (en) 2007-12-13 2008-12-09 Resist underlayer film forming composition and method for forming resist pattern
CN200880118921.0A CN101884015B (zh) 2007-12-13 2008-12-09 形成抗蚀剂下层膜的组合物和抗蚀剂图案的形成方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-321555 2007-12-13
JP2007321555 2007-12-13
JP2008-173721 2008-07-02
JP2008173721 2008-07-02

Publications (1)

Publication Number Publication Date
WO2009075265A1 true WO2009075265A1 (ja) 2009-06-18

Family

ID=40755507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072334 WO2009075265A1 (ja) 2007-12-13 2008-12-09 レジスト下層膜形成組成物及びレジストパターンの形成方法

Country Status (6)

Country Link
US (1) US8361695B2 (ja)
JP (1) JP4984098B2 (ja)
KR (1) KR101372829B1 (ja)
CN (1) CN101884015B (ja)
TW (1) TWI422978B (ja)
WO (1) WO2009075265A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012067040A1 (ja) * 2010-11-17 2012-05-24 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
WO2013069812A1 (en) * 2011-11-10 2013-05-16 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern
KR20210097977A (ko) * 2020-01-31 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
WO2021172296A1 (ja) * 2020-02-28 2021-09-02 日産化学株式会社 ポリマーの製造方法
WO2022107759A1 (ja) * 2020-11-19 2022-05-27 日産化学株式会社 レジスト下層膜形成組成物

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US10437150B2 (en) * 2008-11-27 2019-10-08 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
KR101804392B1 (ko) * 2011-03-15 2017-12-04 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
EP2754681B1 (en) * 2011-09-08 2018-01-03 Nissan Chemical Industries, Ltd. Polymer and composition including same, and adhesive composition
JP5919122B2 (ja) * 2012-07-27 2016-05-18 富士フイルム株式会社 樹脂組成物及びそれを用いたパターン形成方法
CN113930151B (zh) * 2021-10-14 2022-06-21 厦门恒坤新材料科技股份有限公司 一种含可自交联巯基三聚氰胺聚合物的抗反射涂层组合物及其制备方法和图案形成方法

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JP2004533637A (ja) * 2001-04-17 2004-11-04 ブルーワー サイエンス アイ エヌ シー． 改善されたスピンボウル適合性を有する反射防止コーティング組成物
WO2005098542A1 (ja) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. 縮合系ポリマーを有する半導体用反射防止膜
US20060014106A1 (en) * 2004-07-15 2006-01-19 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
JP2006053543A (ja) * 2004-07-15 2006-02-23 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
WO2006040921A1 (ja) * 2004-10-12 2006-04-20 Nissan Chemical Industries, Ltd. 硫黄原子を含むリソグラフィー用反射防止膜形成組成物
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JP2004533637A (ja) * 2001-04-17 2004-11-04 ブルーワー サイエンス アイ エヌ シー． 改善されたスピンボウル適合性を有する反射防止コーティング組成物
WO2005098542A1 (ja) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. 縮合系ポリマーを有する半導体用反射防止膜
US20060014106A1 (en) * 2004-07-15 2006-01-19 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
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WO2006040921A1 (ja) * 2004-10-12 2006-04-20 Nissan Chemical Industries, Ltd. 硫黄原子を含むリソグラフィー用反射防止膜形成組成物
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WO2007046453A1 (ja) * 2005-10-20 2007-04-26 Jsr Corporation ビニルナフタレン誘導体の重合体、反射防止膜形成組成物及び反射防止膜

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
US8722840B2 (en) 2010-11-17 2014-05-13 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition, and method for forming resist pattern using the same
WO2012067040A1 (ja) * 2010-11-17 2012-05-24 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5610168B2 (ja) * 2010-11-17 2014-10-22 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
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JP2013122569A (ja) * 2011-11-10 2013-06-20 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、マスクブランクス及びパターン形成方法
WO2013069812A1 (en) * 2011-11-10 2013-05-16 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern
KR20210097977A (ko) * 2020-01-31 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JP2021124726A (ja) * 2020-01-31 2021-08-30 三星エスディアイ株式会社Samsung SDI Co., Ltd. レジスト下層膜用組成物およびこれを用いたパターン形成方法
JP7219292B2 (ja) 2020-01-31 2023-02-07 三星エスディアイ株式会社 レジスト下層膜用組成物およびこれを用いたパターン形成方法
US11675271B2 (en) 2020-01-31 2023-06-13 Samsung Sdi Co., Ltd. Resist underlayer composition, and method of forming patterns using the composition
KR102563290B1 (ko) 2020-01-31 2023-08-02 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
WO2021172296A1 (ja) * 2020-02-28 2021-09-02 日産化学株式会社 ポリマーの製造方法
WO2022107759A1 (ja) * 2020-11-19 2022-05-27 日産化学株式会社 レジスト下層膜形成組成物

Also Published As

Publication number Publication date
CN101884015B (zh) 2013-04-24
US20100266951A1 (en) 2010-10-21
TW200947134A (en) 2009-11-16
KR101372829B1 (ko) 2014-03-12
CN101884015A (zh) 2010-11-10
JP4984098B2 (ja) 2012-07-25
US8361695B2 (en) 2013-01-29
KR20100095630A (ko) 2010-08-31
TWI422978B (zh) 2014-01-11
JPWO2009075265A1 (ja) 2011-04-28

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