WO2008093534A1 - Ｅｕｖリソグラフィ用反射型マスクブランク - Google Patents

Ｅｕｖリソグラフィ用反射型マスクブランク Download PDF

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Publication number
WO2008093534A1
WO2008093534A1 PCT/JP2008/050380 JP2008050380W WO2008093534A1 WO 2008093534 A1 WO2008093534 A1 WO 2008093534A1 JP 2008050380 W JP2008050380 W JP 2008050380W WO 2008093534 A1 WO2008093534 A1 WO 2008093534A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask blank
reflective mask
euv lithography
absorber layer
euv
Prior art date
Application number
PCT/JP2008/050380
Other languages
English (en)
French (fr)
Inventor
Kazuyuki Hayashi
Kazuo Kadowaki
Takashi Sugiyama
Original Assignee
Asahi Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Company, Limited filed Critical Asahi Glass Company, Limited
Priority to JP2008556044A priority Critical patent/JP5018789B2/ja
Priority to EP08706000.0A priority patent/EP2028681B1/en
Priority to US12/028,250 priority patent/US7718324B2/en
Publication of WO2008093534A1 publication Critical patent/WO2008093534A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Abstract

　ＥＵＶ光およびパターン検査光の波長域の反射率が低く、かつ該所望の膜組成および膜厚に制御することが容易な吸収体層を有するＥＵＶリソグラフィ用反射型マスクブランクの提供。 　基板上に、ＥＵＶ光を反射する反射層と、ＥＵＶ光を吸収する吸収体層と、がこの順に形成されたＥＵＶリソグラフィ用反射型マスクブランクであって、前記吸収体層が、タンタル（Ｔａ）およびハフニウム（Ｈｆ）を含有し、前記吸収体層における、Ｈｆの含有率が２０～６０ａｔ％であり、Ｔａの含有率が４０～８０ａｔ％であることを特徴とするＥＵＶリソグラフィ用反射型マスクブランク。
PCT/JP2008/050380 2007-01-31 2008-01-15 Ｅｕｖリソグラフィ用反射型マスクブランク WO2008093534A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008556044A JP5018789B2 (ja) 2007-01-31 2008-01-15 Ｅｕｖリソグラフィ用反射型マスクブランク
EP08706000.0A EP2028681B1 (en) 2007-01-31 2008-01-15 Reflective mask blank for euv lithography
US12/028,250 US7718324B2 (en) 2007-01-31 2008-02-08 Reflective mask blank for EUV lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007021092 2007-01-31
JP2007-021092 2007-01-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/028,250 Continuation US7718324B2 (en) 2007-01-31 2008-02-08 Reflective mask blank for EUV lithography

Publications (1)

Publication Number Publication Date
WO2008093534A1 true WO2008093534A1 (ja) 2008-08-07

Family

ID=39668381

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050380 WO2008093534A1 (ja) 2007-01-31 2008-01-15 Ｅｕｖリソグラフィ用反射型マスクブランク

Country Status (5)

Country Link
US (1) US7718324B2 (ja)
EP (1) EP2028681B1 (ja)
JP (1) JP5018789B2 (ja)
TW (1) TWI471902B (ja)
WO (1) WO2008093534A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010050518A1 (ja) * 2008-10-30 2010-05-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010050520A1 (ja) * 2008-10-30 2010-05-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP2010251490A (ja) * 2009-04-15 2010-11-04 Hoya Corp 反射型マスクブランク及び反射型マスクの製造方法
JP2010286632A (ja) * 2009-06-11 2010-12-24 Asahi Glass Co Ltd フォトマスクブランクスの洗浄方法
TWI467317B (zh) * 2009-12-09 2015-01-01 Asahi Glass Co Ltd Optical components for EUV microsurgery
TWI467318B (zh) * 2009-12-04 2015-01-01 Asahi Glass Co Ltd An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm

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TWI444757B (zh) * 2006-04-21 2014-07-11 Asahi Glass Co Ltd 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
EP1973147B1 (en) * 2006-12-27 2011-09-28 Asahi Glass Company, Limited Reflective mask blanc for euv lithography
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CN101978468B (zh) 2008-03-18 2013-03-20 旭硝子株式会社 Euv光刻用反射型掩模基板及其制造方法
WO2009154238A1 (ja) * 2008-06-19 2009-12-23 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
CN102089860B (zh) * 2008-07-14 2014-03-12 旭硝子株式会社 Euv光刻用反射型掩模基板及euv光刻用反射型掩模
MY154175A (en) * 2009-02-13 2015-05-15 Hoya Corp Substrate for a mask blank, mask blank, and photomask
JPWO2011004850A1 (ja) 2009-07-08 2012-12-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5673555B2 (ja) * 2009-12-09 2015-02-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、および該反射層付基板の製造方法
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
JP5830089B2 (ja) 2010-06-15 2015-12-09 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
KR20140004057A (ko) 2010-08-24 2014-01-10 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US8562794B2 (en) * 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
JP5971122B2 (ja) 2011-02-01 2016-08-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP6287099B2 (ja) 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR20180057813A (ko) * 2016-11-22 2018-05-31 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
JP5348141B2 (ja) * 2008-10-30 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010050518A1 (ja) * 2008-10-30 2010-05-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010050520A1 (ja) * 2008-10-30 2010-05-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5348140B2 (ja) * 2008-10-30 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
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JPWO2010050520A1 (ja) * 2008-10-30 2012-03-29 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JPWO2010050518A1 (ja) * 2008-10-30 2012-03-29 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
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JP2010286632A (ja) * 2009-06-11 2010-12-24 Asahi Glass Co Ltd フォトマスクブランクスの洗浄方法
TWI467318B (zh) * 2009-12-04 2015-01-01 Asahi Glass Co Ltd An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
TWI467317B (zh) * 2009-12-09 2015-01-01 Asahi Glass Co Ltd Optical components for EUV microsurgery

Also Published As

Publication number Publication date
US7718324B2 (en) 2010-05-18
JP5018789B2 (ja) 2012-09-05
EP2028681A1 (en) 2009-02-25
TW200847236A (en) 2008-12-01
US20080182183A1 (en) 2008-07-31
EP2028681B1 (en) 2014-04-23
TWI471902B (zh) 2015-02-01
JPWO2008093534A1 (ja) 2010-05-20
EP2028681A4 (en) 2009-10-21

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