DE3752314T2 - Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung - Google Patents
Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für RöntgenstrahlungInfo
- Publication number
- DE3752314T2 DE3752314T2 DE3752314T DE3752314T DE3752314T2 DE 3752314 T2 DE3752314 T2 DE 3752314T2 DE 3752314 T DE3752314 T DE 3752314T DE 3752314 T DE3752314 T DE 3752314T DE 3752314 T2 DE3752314 T2 DE 3752314T2
- Authority
- DE
- Germany
- Prior art keywords
- projection exposure
- ray radiation
- exposure system
- type
- reflection type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0626—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors
- G02B17/0636—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61163068A JP2603225B2 (ja) | 1986-07-11 | 1986-07-11 | X線投影露光装置及び半導体製造方法 |
JP62148616A JPS63311315A (ja) | 1987-06-15 | 1987-06-15 | 物体・像変換装置 |
JP62148612A JP2628164B2 (ja) | 1987-06-15 | 1987-06-15 | 露光装置 |
JP62148615A JP2711537B2 (ja) | 1987-06-15 | 1987-06-15 | X線露光装置 |
JP62148613A JP2673517B2 (ja) | 1987-06-15 | 1987-06-15 | 露光装置 |
JP62148611A JP2556328B2 (ja) | 1987-06-15 | 1987-06-15 | 露光装置 |
JP62148614A JP2628165B2 (ja) | 1987-06-15 | 1987-06-15 | X線露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3752314D1 DE3752314D1 (de) | 2000-06-08 |
DE3752314T2 true DE3752314T2 (de) | 2000-09-14 |
Family
ID=27566131
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3752314T Expired - Lifetime DE3752314T2 (de) | 1986-07-11 | 1987-07-08 | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
DE3752388T Expired - Lifetime DE3752388T2 (de) | 1986-07-11 | 1987-07-08 | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3752388T Expired - Lifetime DE3752388T2 (de) | 1986-07-11 | 1987-07-08 | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5153898A (de) |
EP (2) | EP0947882B1 (de) |
DE (2) | DE3752314T2 (de) |
Families Citing this family (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3856054T2 (de) * | 1987-02-18 | 1998-03-19 | Canon Kk | Reflexionsmaske |
US4964705A (en) * | 1988-11-07 | 1990-10-23 | General Signal Corporation | Unit magnification optical system |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
US5063586A (en) * | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
JPH03266842A (ja) * | 1990-03-16 | 1991-11-27 | Fujitsu Ltd | 反射型ホトリソグラフィ方法、反射型ホトリソグラフィ装置および反射型ホトマスク |
US5315629A (en) * | 1990-10-10 | 1994-05-24 | At&T Bell Laboratories | Ringfield lithography |
US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
JPH04333011A (ja) * | 1991-05-09 | 1992-11-20 | Nikon Corp | 反射縮小投影光学装置 |
EP0523303B1 (de) * | 1991-07-19 | 2000-05-03 | AT&T Corp. | Lithographie mit ringförmigen Bildfeld |
DE69220868T2 (de) * | 1991-09-07 | 1997-11-06 | Canon Kk | System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen |
JP3127511B2 (ja) * | 1991-09-19 | 2001-01-29 | 株式会社日立製作所 | 露光装置および半導体装置の製造方法 |
US5214685A (en) * | 1991-10-08 | 1993-05-25 | Maxwell Laboratories, Inc. | X-ray lithography mirror and method of making same |
US5353322A (en) * | 1992-05-05 | 1994-10-04 | Tropel Corporation | Lens system for X-ray projection lithography camera |
US5220590A (en) * | 1992-05-05 | 1993-06-15 | General Signal Corporation | X-ray projection lithography camera |
JP3219502B2 (ja) * | 1992-12-01 | 2001-10-15 | キヤノン株式会社 | 反射型マスクとその製造方法、並びに露光装置と半導体デバイス製造方法 |
US5581605A (en) * | 1993-02-10 | 1996-12-03 | Nikon Corporation | Optical element, production method of optical element, optical system, and optical apparatus |
US5361292A (en) * | 1993-05-11 | 1994-11-01 | The United States Of America As Represented By The Department Of Energy | Condenser for illuminating a ring field |
US5410434A (en) * | 1993-09-09 | 1995-04-25 | Ultratech Stepper, Inc. | Reflective projection system comprising four spherical mirrors |
JP3666951B2 (ja) * | 1995-10-06 | 2005-06-29 | キヤノン株式会社 | マーク検出方法、これを用いた位置合わせ方法、露光方法及び装置、ならびにデバイス生産方法 |
US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
US6521101B1 (en) * | 1995-11-04 | 2003-02-18 | The Regents Of The University Of California | Method for fabricating beryllium-based multilayer structures |
US5815310A (en) * | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
JP3814359B2 (ja) | 1996-03-12 | 2006-08-30 | キヤノン株式会社 | X線投影露光装置及びデバイス製造方法 |
JP3862347B2 (ja) * | 1996-04-11 | 2006-12-27 | キヤノン株式会社 | X線縮小露光装置およびこれを利用したデバイス製造方法 |
JPH10340850A (ja) * | 1997-06-05 | 1998-12-22 | Nikon Corp | 露光装置 |
US6051344A (en) * | 1997-06-17 | 2000-04-18 | Intel Corporation | Multiple reduction photolithography technique |
US5956192A (en) * | 1997-09-18 | 1999-09-21 | Svg Lithography Systems, Inc. | Four mirror EUV projection optics |
DE19741492A1 (de) * | 1997-09-19 | 1999-03-25 | Microparts Gmbh | Verfahren zur Herstellung von Mikrostrukturkörpern |
US6081578A (en) * | 1997-11-07 | 2000-06-27 | U.S. Philips Corporation | Three-mirror system for lithographic projection, and projection apparatus comprising such a mirror system |
US6199991B1 (en) | 1997-11-13 | 2001-03-13 | U.S. Philips Corporation | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
AU1053199A (en) | 1997-11-14 | 1999-06-07 | Nikon Corporation | Exposure apparatus and method of manufacturing the same, and exposure method |
US6014252A (en) * | 1998-02-20 | 2000-01-11 | The Regents Of The University Of California | Reflective optical imaging system |
US5973826A (en) * | 1998-02-20 | 1999-10-26 | Regents Of The University Of California | Reflective optical imaging system with balanced distortion |
US6226346B1 (en) | 1998-06-09 | 2001-05-01 | The Regents Of The University Of California | Reflective optical imaging systems with balanced distortion |
AU2549899A (en) * | 1998-03-02 | 1999-09-20 | Nikon Corporation | Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device |
US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
EP0957402B1 (de) * | 1998-05-15 | 2006-09-20 | ASML Netherlands B.V. | Lithographische Vorrichtung |
US6577443B2 (en) | 1998-05-30 | 2003-06-10 | Carl-Zeiss Stiftung | Reduction objective for extreme ultraviolet lithography |
DE19923609A1 (de) * | 1998-05-30 | 1999-12-02 | Zeiss Carl Fa | Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie |
US6072852A (en) * | 1998-06-09 | 2000-06-06 | The Regents Of The University Of California | High numerical aperture projection system for extreme ultraviolet projection lithography |
US6213610B1 (en) | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
JP2002532895A (ja) | 1998-12-14 | 2002-10-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Euv照射システム |
US6147818A (en) * | 1998-12-21 | 2000-11-14 | The Regents Of The University Of California | Projection optics box |
US6280906B1 (en) | 1998-12-22 | 2001-08-28 | U.S. Philips Corporation | Method of imaging a mask pattern on a substrate by means of EUV radiation, and apparatus and mask for performing the method |
US7151592B2 (en) * | 1999-02-15 | 2006-12-19 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
US6985210B2 (en) * | 1999-02-15 | 2006-01-10 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
USRE42118E1 (en) * | 1999-02-15 | 2011-02-08 | Carl-Zeiss-Smt Ag | Projection system for EUV lithography |
DE19910724A1 (de) | 1999-03-11 | 2000-09-14 | Zeiss Carl Fa | Mikrolithographie-Projektionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
US6033079A (en) | 1999-03-15 | 2000-03-07 | Hudyma; Russell | High numerical aperture ring field projection system for extreme ultraviolet lithography |
US6188513B1 (en) | 1999-03-15 | 2001-02-13 | Russell Hudyma | High numerical aperture ring field projection system for extreme ultraviolet lithography |
US6970228B1 (en) | 1999-07-16 | 2005-11-29 | Nikon Corporation | Exposure method and system |
AU5932500A (en) | 1999-07-22 | 2001-02-13 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method and mask devices |
EP1093021A3 (de) | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projektionsbelichtungssystem sowie ein solches System benutzendes Gerät und Verfahren |
TW504605B (en) | 1999-12-03 | 2002-10-01 | Asm Lithography Bv | Lithographic projection apparatus, method of manufacturing a device using the same, the device and mask |
TW508980B (en) | 1999-12-23 | 2002-11-01 | Koninkl Philips Electronics Nv | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
US6304630B1 (en) | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
TW502559B (en) | 1999-12-24 | 2002-09-11 | Koninkl Philips Electronics Nv | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
TW538256B (en) | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
US6867913B2 (en) | 2000-02-14 | 2005-03-15 | Carl Zeiss Smt Ag | 6-mirror microlithography projection objective |
AU2001250017A1 (en) | 2000-03-03 | 2001-09-17 | Dun And Bradstreet, Inc. | Facilitating a transaction in electronic commerce |
JP2001272358A (ja) * | 2000-03-24 | 2001-10-05 | Nikon Corp | X線試料検査装置 |
US6776006B2 (en) | 2000-10-13 | 2004-08-17 | Corning Incorporated | Method to avoid striae in EUV lithography mirrors |
JP2004512552A (ja) | 2000-10-20 | 2004-04-22 | カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス | 8反射鏡型マイクロリソグラフィ用投影光学系 |
DE10052289A1 (de) | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
TW573234B (en) | 2000-11-07 | 2004-01-21 | Asml Netherlands Bv | Lithographic projection apparatus and integrated circuit device manufacturing method |
JP2004514943A (ja) * | 2000-11-28 | 2004-05-20 | カール・ツアイス・エスエムテイ・アーゲー | 157nmリソグラフィ用の反射屈折投影系 |
KR20020074232A (ko) * | 2000-12-06 | 2002-09-28 | 가부시키가이샤 니콘 | X선 투영 노광장치, x선 투영 노광방법 및 반도체디바이스 |
JP3659175B2 (ja) * | 2001-02-16 | 2005-06-15 | 株式会社村田製作所 | 半導体チップの製造方法および半導体ウエハ |
US6879374B2 (en) * | 2001-06-20 | 2005-04-12 | Asml Netherlands B.V. | Device manufacturing method, device manufactured thereby and a mask for use in the method |
JP4178862B2 (ja) * | 2001-08-01 | 2008-11-12 | カール・ツァイス・エスエムティー・アーゲー | Euvフォトリソグラフィ用の反射投影レンズ |
JP4639352B2 (ja) * | 2002-05-10 | 2011-02-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 波長≦100nmで物体を検査する検査系 |
JP2004004256A (ja) | 2002-05-31 | 2004-01-08 | Sony Corp | 光走査装置及び2次元画像形成装置 |
US7022443B2 (en) * | 2003-02-12 | 2006-04-04 | Intel Corporation | Compensation of reflective mask effects in lithography systems |
US7158215B2 (en) * | 2003-06-30 | 2007-01-02 | Asml Holding N.V. | Large field of view protection optical system with aberration correctability for flat panel displays |
US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US7760327B2 (en) * | 2003-10-02 | 2010-07-20 | Carl Zeiss Smt Ag | Reflecting optical element with eccentric optical passageway |
US7466489B2 (en) * | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US7463422B2 (en) * | 2004-01-14 | 2008-12-09 | Carl Zeiss Smt Ag | Projection exposure apparatus |
US20080151365A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
DE602005008707D1 (de) * | 2004-01-14 | 2008-09-18 | Zeiss Carl Smt Ag | Catadioptrisches projektionsobjektiv |
US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
KR20170129271A (ko) | 2004-05-17 | 2017-11-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US20080112927A1 (en) * | 2006-10-23 | 2008-05-15 | Genegrafts Ltd. | Cells and methods utilizing same for modifying the electrophysiological function of excitable tissues |
EP1930771A1 (de) * | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen |
JP5018787B2 (ja) * | 2006-12-27 | 2012-09-05 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
WO2008093534A1 (ja) * | 2007-01-31 | 2008-08-07 | Asahi Glass Company, Limited | Euvリソグラフィ用反射型マスクブランク |
US8027022B2 (en) | 2007-07-24 | 2011-09-27 | Carl Zeiss Smt Gmbh | Projection objective |
KR101393999B1 (ko) | 2007-08-20 | 2014-05-14 | 칼 짜이스 에스엠티 게엠베하 | 반사 코팅을 갖는 미러 소자들을 구비하는 투영 대물렌즈 |
WO2009060549A1 (ja) * | 2007-11-09 | 2009-05-14 | Nalux Co., Ltd. | 結像光学系および距離測定装置 |
DE102009054869B4 (de) | 2009-04-09 | 2022-02-17 | Carl Zeiss Smt Gmbh | Spiegel zur Führung eines Strahlungsbündels, Vorrichtungen mit einem derartigen Spiegel sowie Verfahren zur Herstellung mikro- oder nanostrukturierter Bauelemente |
DE102009047179B8 (de) * | 2009-11-26 | 2016-08-18 | Carl Zeiss Smt Gmbh | Projektionsobjektiv |
CN103487923B (zh) * | 2013-09-17 | 2015-09-02 | 中国科学院西安光学精密机械研究所 | 一种全反射光学成像系统 |
DE102014204171A1 (de) | 2014-03-06 | 2015-09-24 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
CN109425977B (zh) * | 2017-08-24 | 2021-12-24 | 坦前科技股份有限公司 | 抬头显示器的光学反射模组 |
JP7228966B2 (ja) * | 2018-06-29 | 2023-02-27 | キヤノン株式会社 | 画像処理装置及びその制御方法及びプログラム |
CN109298605A (zh) * | 2018-11-30 | 2019-02-01 | 上海华力微电子有限公司 | 像差校正系统、光刻机及像差校正方法 |
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US3527526A (en) * | 1965-05-26 | 1970-09-08 | Ernest W Silvertooth | Catoptric image-forming system in which light is reflected twice from each surface |
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US4302079A (en) * | 1980-04-10 | 1981-11-24 | Bell Telephone Laboratories, Incorporated | Photolithographic projection apparatus using light in the far ultraviolet |
JPS57106031A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Transferring device for fine pattern |
JPS58101426A (ja) * | 1981-12-11 | 1983-06-16 | Nec Corp | X線露光装置 |
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JPS60173551A (ja) * | 1984-02-20 | 1985-09-06 | Hideki Matsumura | X線など光線の反射投影によるパタ−ン転写法 |
JPS612124A (ja) * | 1984-06-14 | 1986-01-08 | Canon Inc | 結像光学系 |
US4682037A (en) * | 1984-07-10 | 1987-07-21 | Canon Kabushiki Kaisha | Projection exposure apparatus having an alignment light of a wavelength other than that of the exposure light |
JPS6134941A (ja) * | 1984-07-26 | 1986-02-19 | Canon Inc | 合焦検知装置 |
US4701035A (en) * | 1984-08-14 | 1987-10-20 | Canon Kabushiki Kaisha | Reflection optical system |
US4748477A (en) * | 1985-04-30 | 1988-05-31 | Canon Kabushiki Kaisha | Exposure apparatus |
US4749867A (en) * | 1985-04-30 | 1988-06-07 | Canon Kabushiki Kaisha | Exposure apparatus |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
-
1987
- 1987-07-08 EP EP99201981A patent/EP0947882B1/de not_active Revoked
- 1987-07-08 DE DE3752314T patent/DE3752314T2/de not_active Expired - Lifetime
- 1987-07-08 DE DE3752388T patent/DE3752388T2/de not_active Expired - Lifetime
- 1987-07-08 EP EP87306037A patent/EP0252734B1/de not_active Expired - Lifetime
-
1992
- 1992-02-28 US US07/841,298 patent/US5153898A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0947882A3 (de) | 1999-10-13 |
DE3752388D1 (de) | 2006-05-18 |
DE3752388T2 (de) | 2006-10-19 |
US5153898A (en) | 1992-10-06 |
EP0947882B1 (de) | 2006-03-29 |
EP0252734A2 (de) | 1988-01-13 |
EP0252734A3 (de) | 1988-10-26 |
EP0252734B1 (de) | 2000-05-03 |
DE3752314D1 (de) | 2000-06-08 |
EP0947882A2 (de) | 1999-10-06 |
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