DE69322345T2 - Synchrotron-Röntgenbelichtungsverfahren - Google Patents
Synchrotron-RöntgenbelichtungsverfahrenInfo
- Publication number
- DE69322345T2 DE69322345T2 DE69322345T DE69322345T DE69322345T2 DE 69322345 T2 DE69322345 T2 DE 69322345T2 DE 69322345 T DE69322345 T DE 69322345T DE 69322345 T DE69322345 T DE 69322345T DE 69322345 T2 DE69322345 T2 DE 69322345T2
- Authority
- DE
- Germany
- Prior art keywords
- synchrotron
- exposure process
- ray exposure
- ray
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0844—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using X-ray
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04270973A JP3096529B2 (ja) | 1992-09-14 | 1992-09-14 | X線露光方法 |
JP05159495A JP3103461B2 (ja) | 1993-06-29 | 1993-06-29 | X線露光方法と装置、並びにデバイス製造方法 |
JP5161789A JPH0757987A (ja) | 1993-06-30 | 1993-06-30 | X線露光方法と装置、並びにデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322345D1 DE69322345D1 (de) | 1999-01-14 |
DE69322345T2 true DE69322345T2 (de) | 1999-05-20 |
Family
ID=27321556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322345T Expired - Fee Related DE69322345T2 (de) | 1992-09-14 | 1993-09-13 | Synchrotron-Röntgenbelichtungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (1) | US5606586A (de) |
EP (1) | EP0588579B1 (de) |
DE (1) | DE69322345T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3666951B2 (ja) | 1995-10-06 | 2005-06-29 | キヤノン株式会社 | マーク検出方法、これを用いた位置合わせ方法、露光方法及び装置、ならびにデバイス生産方法 |
JP3284045B2 (ja) * | 1996-04-30 | 2002-05-20 | キヤノン株式会社 | X線光学装置およびデバイス製造方法 |
JP3450622B2 (ja) * | 1996-07-19 | 2003-09-29 | キヤノン株式会社 | 露光装置およびこれを用いたデバイス製造方法 |
JP3255849B2 (ja) * | 1996-07-19 | 2002-02-12 | キヤノン株式会社 | 露光装置 |
US6167111A (en) * | 1997-07-02 | 2000-12-26 | Canon Kabushiki Kaisha | Exposure apparatus for synchrotron radiation lithography |
JP2000100685A (ja) * | 1998-09-17 | 2000-04-07 | Nikon Corp | 露光装置及び該装置を用いた露光方法 |
JP2000357643A (ja) | 1999-06-14 | 2000-12-26 | Canon Inc | 露光方法及びそれを用いた露光装置 |
JP2000357644A (ja) | 1999-06-14 | 2000-12-26 | Canon Inc | 露光方法及び露光装置 |
JP2002093684A (ja) | 2000-09-18 | 2002-03-29 | Canon Inc | X線露光装置、x線露光方法、半導体製造装置および微細構造体 |
DE10122279A1 (de) * | 2001-05-08 | 2002-12-12 | Heimann Systems Gmbh & Co | Röntgenanlage |
US6998620B2 (en) * | 2001-08-13 | 2006-02-14 | Lambda Physik Ag | Stable energy detector for extreme ultraviolet radiation detection |
JP3564104B2 (ja) * | 2002-01-29 | 2004-09-08 | キヤノン株式会社 | 露光装置及びその制御方法、これを用いたデバイスの製造方法 |
JP4006251B2 (ja) * | 2002-03-20 | 2007-11-14 | キヤノン株式会社 | ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法 |
US7973909B2 (en) * | 2008-10-14 | 2011-07-05 | Synopsys, Inc. | Method and apparatus for using a synchrotron as a source in extreme ultraviolet lithography |
CN101740155B (zh) * | 2008-11-19 | 2012-03-28 | 同方威视技术股份有限公司 | 辐射屏蔽装置以及辐照系统 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2744245B2 (ja) * | 1988-03-25 | 1998-04-28 | キヤノン株式会社 | 露光装置と露光方法 |
EP0345097B1 (de) * | 1988-06-03 | 2001-12-12 | Canon Kabushiki Kaisha | Verfahren und Vorrichtung zur Belichtung |
US5157700A (en) * | 1988-09-02 | 1992-10-20 | Canon Kabushiki Kaisha | Exposure apparatus for controlling intensity of exposure radiation |
JP2731955B2 (ja) * | 1989-09-07 | 1998-03-25 | キヤノン株式会社 | X線露光装置 |
US5285488A (en) * | 1989-09-21 | 1994-02-08 | Canon Kabushiki Kaisha | Exposure apparatus |
DE69031897T2 (de) * | 1989-10-19 | 1998-05-07 | Canon Kk | Röntgenbelichtungsvorrichtung |
JPH0443626A (ja) * | 1990-06-11 | 1992-02-13 | Soltec:Kk | X線露光方法 |
JP3143505B2 (ja) * | 1991-10-30 | 2001-03-07 | キヤノン株式会社 | X線露光装置 |
-
1993
- 1993-09-13 DE DE69322345T patent/DE69322345T2/de not_active Expired - Fee Related
- 1993-09-13 EP EP93307186A patent/EP0588579B1/de not_active Expired - Lifetime
-
1996
- 1996-07-11 US US08/678,784 patent/US5606586A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69322345D1 (de) | 1999-01-14 |
US5606586A (en) | 1997-02-25 |
EP0588579A1 (de) | 1994-03-23 |
EP0588579B1 (de) | 1998-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |