DE69128207T2 - Belichtungsanordnung mittels Synchrotronstrahlung - Google Patents

Belichtungsanordnung mittels Synchrotronstrahlung

Info

Publication number
DE69128207T2
DE69128207T2 DE69128207T DE69128207T DE69128207T2 DE 69128207 T2 DE69128207 T2 DE 69128207T2 DE 69128207 T DE69128207 T DE 69128207T DE 69128207 T DE69128207 T DE 69128207T DE 69128207 T2 DE69128207 T2 DE 69128207T2
Authority
DE
Germany
Prior art keywords
synchrotron radiation
exposure arrangement
exposure
arrangement
synchrotron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128207T
Other languages
English (en)
Other versions
DE69128207D1 (de
Inventor
Kazunori Iwamoto
Nobutoshi Mizusawa
Takao Kariya
Shunichi Uzawa
Ryuichi Ebinuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2059905A external-priority patent/JP2805239B2/ja
Priority claimed from JP2062753A external-priority patent/JPH03265118A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69128207D1 publication Critical patent/DE69128207D1/de
Application granted granted Critical
Publication of DE69128207T2 publication Critical patent/DE69128207T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0278—Röntgenlithographic or X-ray lithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Public Health (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69128207T 1990-03-13 1991-03-12 Belichtungsanordnung mittels Synchrotronstrahlung Expired - Fee Related DE69128207T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2059905A JP2805239B2 (ja) 1990-03-13 1990-03-13 Ｓｏｒ―ｘ線露光装置
JP2062753A JPH03265118A (ja) 1990-03-15 1990-03-15 露光装置

Publications (2)

Publication Number Publication Date
DE69128207D1 DE69128207D1 (de) 1998-01-02
DE69128207T2 true DE69128207T2 (de) 1998-04-16

Family

ID=26400975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128207T Expired - Fee Related DE69128207T2 (de) 1990-03-13 1991-03-12 Belichtungsanordnung mittels Synchrotronstrahlung

Country Status (3)

Country Link
US (1) US5168512A (de)
EP (1) EP0447175B1 (de)
DE (1) DE69128207T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184582B2 (ja) * 1991-11-01 2001-07-09 キヤノン株式会社 Ｘ線露光装置およびｘ線露光方法
US5285142A (en) * 1993-02-09 1994-02-08 Svg Lithography Systems, Inc. Wafer stage with reference surface
JPH06302493A (ja) * 1993-04-13 1994-10-28 Soltec:Kk プロキシミティ露光方法及びその装置
JP3167074B2 (ja) * 1993-06-30 2001-05-14 キヤノン株式会社 Ｓｏｒ露光システム及びこれを用いて製造されたマスク
JP3200282B2 (ja) 1993-07-21 2001-08-20 キヤノン株式会社 処理システム及びこれを用いたデバイス製造方法
US5528651A (en) * 1994-06-09 1996-06-18 Elekta Instrument Ab Positioning device and method for radiation treatment
JP3247554B2 (ja) * 1994-07-19 2002-01-15 キヤノン株式会社 基板搬送装置およびこれを用いた露光装置
JP3261948B2 (ja) * 1995-03-28 2002-03-04 キヤノン株式会社 Ｘ線露光用マスク及びそれを用いた半導体素子の製造方法
JP3894509B2 (ja) * 1995-08-07 2007-03-22 キヤノン株式会社 光学装置、露光装置およびデバイス製造方法
TW341719B (en) * 1996-03-01 1998-10-01 Canon Kk Surface position detecting method and scanning exposure method using the same
JP3266515B2 (ja) * 1996-08-02 2002-03-18 キヤノン株式会社 露光装置、デバイス製造方法およびステージ装置
US6559465B1 (en) 1996-08-02 2003-05-06 Canon Kabushiki Kaisha Surface position detecting method having a detection timing determination
JPH11294520A (ja) * 1998-04-08 1999-10-29 Canon Inc 除振装置、これを用いた露光装置およびデバイス製造方法、ならびに除振方法
JP2001345248A (ja) * 2000-05-31 2001-12-14 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP3728180B2 (ja) 2000-06-01 2005-12-21 キヤノン株式会社 干渉計搭載ステージ
KR100712551B1 (ko) * 2006-02-09 2007-05-02 삼성전자주식회사 스핀 유닛의 위치 재현성 실현이 가능한 스핀너 장비 및 그 운용 방법
US11968772B2 (en) 2019-05-30 2024-04-23 Kla Corporation Optical etendue matching methods for extreme ultraviolet metrology

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055624A (ja) * 1983-09-07 1985-03-30 Hitachi Ltd Ｘ線露光装置
US4803712A (en) * 1987-01-20 1989-02-07 Hitachi, Ltd. X-ray exposure system
JP2799570B2 (ja) * 1988-05-10 1998-09-17 キヤノン株式会社 露光装置
JP2627543B2 (ja) * 1988-09-05 1997-07-09 キヤノン株式会社 Ｓｏｒ露光システム

Also Published As

Publication number Publication date
DE69128207D1 (de) 1998-01-02
US5168512A (en) 1992-12-01
EP0447175B1 (de) 1997-11-19
EP0447175A2 (de) 1991-09-18
EP0447175A3 (en) 1992-11-19

Similar Documents

Publication Publication Date Title
DE69023602D1 (de) Synchrotronstrahlungsgerät.
DE69129008D1 (de) Röntgenstrahlentherapiesimulator
DE69116770D1 (de) Strahlungsdetektor
DE69031897D1 (de) Röntgenbelichtungsvorrichtung
DE69128207T2 (de) Belichtungsanordnung mittels Synchrotronstrahlung
DE69126719D1 (de) Belichtungsvorrichtung
DE69119908D1 (de) Bilderzeugungsgerätes im zusammenhang mit strahlentherapie
NO921044L (no) Baereenhet for straalingskilde
DE69120897D1 (de) Röntgeneinrichtung
DE68929187T2 (de) Belichtungsapparat
DE69218839D1 (de) Tomographische Bilderzeugung mittels Schrägstrahlen
DE69128655D1 (de) Belichtungsgerät
DE69126907D1 (de) Röntgenstrahlen-Maskenstruktur
DE59107329D1 (de) Strahlenquelle für quasimonochromatische Röntgenstrahlung
DE69126456D1 (de) Belichtungsgerät
DE69121636D1 (de) Röntgenbild-Aufnahmeverfahren
DE69322345D1 (de) Synchrotron-Röntgenbelichtungsverfahren
DE69117432D1 (de) Röntgen-Spektralphotometer
DE69033791D1 (de) Röntgenbelichtungsvorrichtung
DE69127479D1 (de) Belichtungssystem
DE69126395D1 (de) Thermographischer Röntgenfilm
DE69030493D1 (de) Belichtungsgerät
DE69028478D1 (de) Belichtungsmaske
DE59007647D1 (de) Röntgenbelichtungsautomat.
DE69231428T2 (de) Belichtungsrechner

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee