DE69220868T2 - System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents

System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen

Info

Publication number
DE69220868T2
DE69220868T2 DE69220868T DE69220868T DE69220868T2 DE 69220868 T2 DE69220868 T2 DE 69220868T2 DE 69220868 T DE69220868 T DE 69220868T DE 69220868 T DE69220868 T DE 69220868T DE 69220868 T2 DE69220868 T2 DE 69220868T2
Authority
DE
Germany
Prior art keywords
stabilizing
shapes
semiconductor devices
optical elements
exposure device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220868T
Other languages
English (en)
Other versions
DE69220868D1 (de
Inventor
Masahito Niibe
Yasuaki Fukuda
Masami Hayashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03255800A external-priority patent/JP3132086B2/ja
Priority claimed from JP02326292A external-priority patent/JP3238737B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69220868D1 publication Critical patent/DE69220868D1/de
Publication of DE69220868T2 publication Critical patent/DE69220868T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
DE69220868T 1991-09-07 1992-09-04 System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen Expired - Fee Related DE69220868T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03255800A JP3132086B2 (ja) 1991-09-07 1991-09-07 光学素子の形状制御方法および露光装置
JP02326292A JP3238737B2 (ja) 1992-01-13 1992-01-13 被照明部材の温度制御方法およびその装置

Publications (2)

Publication Number Publication Date
DE69220868D1 DE69220868D1 (de) 1997-08-21
DE69220868T2 true DE69220868T2 (de) 1997-11-06

Family

ID=26360579

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220868T Expired - Fee Related DE69220868T2 (de) 1991-09-07 1992-09-04 System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (4)

Country Link
US (1) US5390228A (de)
EP (1) EP0532236B1 (de)
CA (1) CA2077572C (de)
DE (1) DE69220868T2 (de)

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JP3368091B2 (ja) * 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JP3814359B2 (ja) * 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
JP3563224B2 (ja) * 1996-03-25 2004-09-08 住友電気工業株式会社 半導体ウエハの評価方法、熱処理方法、および熱処理装置
JP3231241B2 (ja) * 1996-05-01 2001-11-19 キヤノン株式会社 Ｘ線縮小露光装置、及び該装置を用いた半導体製造方法
US5881088A (en) * 1997-01-08 1999-03-09 Trw Inc. Face-cooled high-power laser optic cell
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US6377655B1 (en) * 1998-05-08 2002-04-23 Nikon Corporation Reflective mirror for soft x-ray exposure apparatus
DE19827602A1 (de) * 1998-06-20 1999-12-23 Zeiss Carl Fa Verfahren zur Korrektur nicht-rotationssymmetrischer Bildfehler
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DE19956353C1 (de) * 1999-11-24 2001-08-09 Zeiss Carl Optische Anordnung
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US6455821B1 (en) 2000-08-17 2002-09-24 Nikon Corporation System and method to control temperature of an article
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EP1220038B1 (de) * 2000-12-22 2007-03-14 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6924492B2 (en) 2000-12-22 2005-08-02 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4006251B2 (ja) * 2002-03-20 2007-11-14 キヤノン株式会社 ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法
US20050099611A1 (en) * 2002-06-20 2005-05-12 Nikon Corporation Minimizing thermal distortion effects on EUV mirror
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JP4458323B2 (ja) * 2003-02-13 2010-04-28 キヤノン株式会社 保持装置、当該保持装置を有する露光装置、及びデバイス製造方法
JP4018564B2 (ja) * 2003-03-14 2007-12-05 キヤノン株式会社 光学系、及びそれを用いた露光装置、デバイスの製造方法
DE10317662A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
JP2004363559A (ja) * 2003-05-14 2004-12-24 Canon Inc 光学部材保持装置
WO2005022614A1 (ja) * 2003-08-28 2005-03-10 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
DE60315986T2 (de) * 2003-10-09 2008-05-21 Asml Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
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WO2005109104A2 (en) * 2004-05-06 2005-11-17 Carl Zeiss Laser Optics Gmbh Optical component having an improved thermal behavior
US7483223B2 (en) 2004-05-06 2009-01-27 Carl Zeiss Smt Ag Optical component having an improved transient thermal behavior and method for improving the transient thermal behavior of an optical component
US7375794B2 (en) * 2004-08-04 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7186978B2 (en) * 2004-10-15 2007-03-06 Millennium Enginerring And Integration Company Compact emissivity and temperature measuring infrared detector
US7959310B2 (en) * 2006-09-13 2011-06-14 Carl Zeiss Smt Gmbh Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element
DE102006045075A1 (de) * 2006-09-21 2008-04-03 Carl Zeiss Smt Ag Steuerbares optisches Element
US7525640B2 (en) * 2006-11-07 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101492287B1 (ko) 2007-03-27 2015-02-11 칼 짜이스 에스엠테 게엠베하 편평하게 조사된 보정광을 이용한 광학 소자의 보정
US8064151B2 (en) * 2007-08-14 2011-11-22 Asml Netherlands B.V. Lithographic apparatus and thermal optical manipulator control method
EP2181357A1 (de) * 2007-08-24 2010-05-05 Carl Zeiss SMT AG Steuerbares optisches element und verfahren zum betrieb eines optischen elements mit thermischen stellgliedern und projektionsbelichtungsvorrichtung für die halbleiterlithografie
US7740362B1 (en) * 2008-02-19 2010-06-22 Jefferson Science Associates Mirror with thermally controlled radius of curvature
WO2009152959A1 (en) * 2008-06-17 2009-12-23 Carl Zeiss Smt Ag Projection exposure apparatus for semiconductor lithography comprising a device for the thermal manipulation of an optical element
DE102009033818A1 (de) 2008-09-19 2010-03-25 Carl Zeiss Smt Ag Temperiervorrichtung für eine optische Baugruppe
EP2169464A1 (de) 2008-09-29 2010-03-31 Carl Zeiss SMT AG Beleuchtungssystem eines mikrolithografischen Projektionsbelichtungsgerätes
WO2010133231A1 (en) * 2009-05-16 2010-11-25 Carl Zeiss Smt Ag Projection exposure apparatus for semiconductor lithography comprising an optical correction arrangement
WO2012013747A1 (en) 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
DE102010039930A1 (de) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage
DE102010041298A1 (de) 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
DE102010041528A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
DE102011005778A1 (de) * 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
DE102011086513A1 (de) * 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
JP6236095B2 (ja) 2013-03-13 2017-11-22 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ装置
DE102013219986A1 (de) * 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102014204171A1 (de) 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102015212859A1 (de) * 2015-07-09 2016-07-07 Carl Zeiss Smt Gmbh Lithographieanlage sowie Verfahren
DE102017217121A1 (de) * 2017-09-26 2019-03-28 Robert Bosch Gmbh Anordnung eines optischen Systems und Temperierungsverfahren
DE102019217185A1 (de) * 2019-11-07 2021-05-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie
DE102020203753A1 (de) 2020-03-24 2021-09-30 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie
US11287751B2 (en) * 2020-07-29 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for lens heating control
CN113204175B (zh) * 2021-04-25 2022-10-28 华虹半导体(无锡)有限公司 浸润式光刻机曝光方法
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Also Published As

Publication number Publication date
EP0532236B1 (de) 1997-07-16
EP0532236A1 (de) 1993-03-17
DE69220868D1 (de) 1997-08-21
CA2077572C (en) 1998-08-18
CA2077572A1 (en) 1993-03-08
US5390228A (en) 1995-02-14

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