DE69409780D1 - Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente - Google Patents

Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente

Info

Publication number
DE69409780D1
DE69409780D1 DE69409780T DE69409780T DE69409780D1 DE 69409780 D1 DE69409780 D1 DE 69409780D1 DE 69409780 T DE69409780 T DE 69409780T DE 69409780 T DE69409780 T DE 69409780T DE 69409780 D1 DE69409780 D1 DE 69409780D1
Authority
DE
Germany
Prior art keywords
opto
production
semiconductor components
electrical semiconductor
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69409780T
Other languages
English (en)
Other versions
DE69409780T2 (de
Inventor
Hisashi C O Nec Corpo Takemura
Tsutomu C O Nec Corpor Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69409780D1 publication Critical patent/DE69409780D1/de
Application granted granted Critical
Publication of DE69409780T2 publication Critical patent/DE69409780T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices
DE69409780T 1993-12-20 1994-12-19 Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente Expired - Fee Related DE69409780T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31953893 1993-12-20

Publications (2)

Publication Number Publication Date
DE69409780D1 true DE69409780D1 (de) 1998-05-28
DE69409780T2 DE69409780T2 (de) 1998-11-12

Family

ID=18111369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69409780T Expired - Fee Related DE69409780T2 (de) 1993-12-20 1994-12-19 Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente

Country Status (4)

Country Link
US (1) US5576221A (de)
EP (1) EP0663699B1 (de)
KR (1) KR0175173B1 (de)
DE (1) DE69409780T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701754B2 (ja) * 1994-10-03 1998-01-21 日本電気株式会社 シリコン受光素子の製造方法
JP2748914B2 (ja) * 1996-01-25 1998-05-13 日本電気株式会社 光検出用半導体装置
JP2867983B2 (ja) * 1996-12-03 1999-03-10 日本電気株式会社 フォトディテクタおよびその製造方法
JP3016371B2 (ja) * 1997-03-26 2000-03-06 日本電気株式会社 光検出器の製造方法
JPH10290023A (ja) * 1997-04-15 1998-10-27 Nec Corp 半導体光検出器
WO2005018005A1 (en) * 2003-06-26 2005-02-24 Rj Mears, Llc Semiconductor device including mosfet having band-engineered superlattice
KR20060133024A (ko) * 2004-03-23 2006-12-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스의 제조 방법 및 반도체 디바이스
KR100634444B1 (ko) * 2004-12-20 2006-10-16 삼성전자주식회사 수광 소자 및 그 형성 방법
US20070262296A1 (en) * 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
KR100782312B1 (ko) 2006-10-25 2007-12-06 한국전자통신연구원 고화질 ｃｍｏｓ 이미지 센서 및 포토 다이오드
US7781827B2 (en) 2007-01-24 2010-08-24 Mears Technologies, Inc. Semiconductor device with a vertical MOSFET including a superlattice and related methods
US7928425B2 (en) * 2007-01-25 2011-04-19 Mears Technologies, Inc. Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
US7812339B2 (en) * 2007-04-23 2010-10-12 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8247854B2 (en) 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
US10573719B2 (en) * 2015-05-11 2020-02-25 Applied Materials, Inc. Horizontal gate all around device isolation
TWI825991B (zh) 2015-05-11 2023-12-11 美商應用材料股份有限公司 水平環繞式閘極與鰭式場效電晶體元件的隔離
KR102016946B1 (ko) * 2019-07-30 2019-09-02 주식회사 부영일렉트로닉스 다이얼 스위치용 인쇄회로기판의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
US4771013A (en) * 1986-08-01 1988-09-13 Texas Instruments Incorporated Process of making a double heterojunction 3-D I2 L bipolar transistor with a Si/Ge superlattice
JPS63122285A (ja) * 1986-11-12 1988-05-26 Tokuzo Sukegawa 半導体受光素子用材料
US4899200A (en) * 1988-06-03 1990-02-06 Regents Of The University Of Minnesota Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
US4847210A (en) * 1988-08-05 1989-07-11 Motorola Inc. Integrated pin photo-detector method
DE69030129T2 (de) * 1989-04-12 1997-10-09 Sumitomo Electric Industries Herstellungsverfahren einer integrierten Halbleiterschaltung
JPH0353567A (ja) * 1989-07-21 1991-03-07 Nippon Telegr & Teleph Corp <Ntt> 超格子構造の形成方法
JP2988540B2 (ja) * 1991-06-13 1999-12-13 本田技研工業株式会社 半導体光検出装置
US5266813A (en) * 1992-01-24 1993-11-30 International Business Machines Corporation Isolation technique for silicon germanium devices
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
JPH0685235A (ja) * 1992-09-03 1994-03-25 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
KR0175173B1 (ko) 1999-02-01
DE69409780T2 (de) 1998-11-12
EP0663699B1 (de) 1998-04-22
US5576221A (en) 1996-11-19
EP0663699A2 (de) 1995-07-19
EP0663699A3 (de) 1995-09-27
KR950021804A (ko) 1995-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee