TWI682459B - 電漿活化之保形介電薄膜沉積 - Google Patents

電漿活化之保形介電薄膜沉積 Download PDF

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TWI682459B
TWI682459B TW106122777A TW106122777A TWI682459B TW I682459 B TWI682459 B TW I682459B TW 106122777 A TW106122777 A TW 106122777A TW 106122777 A TW106122777 A TW 106122777A TW I682459 B TWI682459 B TW I682459B
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reactant
film
plasma
reaction chamber
cfd
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TW106122777A
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Chinese (zh)
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TW201735162A (zh
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史旺明內森珊卡
亨利強
Ｍ 豪斯曼恩丹尼斯
瑟藍莫尼恩普拉莫
西里蘭漫德彥
藍格拉傑費許旺納森
Ｋ 凱帝吉克西
史貴凡迪巴頓 Ｊ 凡
Ｊ 瑪克羅安組
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諾發系統有限公司
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Priority claimed from US13/242,084 external-priority patent/US8637411B2/en
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    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

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