JP6199292B2 - プラズマ活性化されるコンフォーマル誘電体膜 - Google Patents

プラズマ活性化されるコンフォーマル誘電体膜 Download PDF

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JP6199292B2
JP6199292B2 JP2014531838A JP2014531838A JP6199292B2 JP 6199292 B2 JP6199292 B2 JP 6199292B2 JP 2014531838 A JP2014531838 A JP 2014531838A JP 2014531838 A JP2014531838 A JP 2014531838A JP 6199292 B2 JP6199292 B2 JP 6199292B2
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film
dopant
reactant
plasma
substrate surface
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JP2014532304A (ja
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スワミナタン・シャンカー
ヘンリー・ジョン
ハウスマン・デニス・エム．
スブラモニウム・プラモド
スリラム・マンディアム
ランガラジャン・ビシュワナタン
カティーグ・キーシ・ケイ．
バン・シュラベンディジク・バート・ジェイ．
マッケロウ・アンドリュー・ジェイ．
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Novellus Systems Inc
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Novellus Systems Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

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CN103890910A (zh) 2014-06-25
SG10201607194PA (en) 2016-10-28
TWI531001B (zh) 2016-04-21
KR102084901B1 (ko) 2020-03-05
TWI682459B (zh) 2020-01-11
CN103890910B (zh) 2017-05-17
WO2013043330A1 (en) 2013-03-28
KR20140079431A (ko) 2014-06-26
TW201330096A (zh) 2013-07-16
CN107342216B (zh) 2022-05-31
JP2014532304A (ja) 2014-12-04
JP2018011067A (ja) 2018-01-18

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