TWI594222B - 具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置 - Google Patents

具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置 Download PDF

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TWI594222B
TWI594222B TW105109003A TW105109003A TWI594222B TW I594222 B TWI594222 B TW I594222B TW 105109003 A TW105109003 A TW 105109003A TW 105109003 A TW105109003 A TW 105109003A TW I594222 B TWI594222 B TW I594222B
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Taiwan
Prior art keywords
transistor
gate
voltage
circuit
driver circuit
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TW105109003A
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English (en)
Chinese (zh)
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TW201626350A (zh
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早川昌彥
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半導體能源研究所股份有限公司
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3685Details of drivers for data electrodes
    • G09G3/3688Details of drivers for data electrodes suitable for active matrices only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/043Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0289Details of voltage level shifters arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0291Details of output amplifiers or buffers arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Control Of El Displays (AREA)
TW105109003A 2009-10-30 2010-10-15 具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置 TWI594222B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009249631 2009-10-30

Publications (2)

Publication Number Publication Date
TW201626350A TW201626350A (zh) 2016-07-16
TWI594222B true TWI594222B (zh) 2017-08-01

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TW105109003A TWI594222B (zh) 2009-10-30 2010-10-15 具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置
TW099135268A TWI592918B (zh) 2009-10-30 2010-10-15 具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置

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TW099135268A TWI592918B (zh) 2009-10-30 2010-10-15 具有顯示部驅動器電路之驅動器電路及其操作方法,具有該驅動器電路之顯示裝置及具有該顯示裝置之電子裝置

Country Status (6)

Country Link
US (1) US8674979B2 (https=)
JP (4) JP5178801B2 (https=)
KR (1) KR101712340B1 (https=)
CN (1) CN102484471B (https=)
TW (2) TWI594222B (https=)
WO (1) WO2011052368A1 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101700470B1 (ko) 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8718224B2 (en) * 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
TWI621243B (zh) * 2011-08-29 2018-04-11 半導體能源研究所股份有限公司 半導體裝置
JP2013084333A (ja) * 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
US8988152B2 (en) * 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102932705B1 (ko) 2012-04-13 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US9742378B2 (en) * 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI600022B (zh) 2012-07-20 2017-09-21 半導體能源研究所股份有限公司 脈衝輸出電路、顯示裝置、及電子裝置
KR102013158B1 (ko) * 2012-08-22 2019-08-23 삼성디스플레이 주식회사 게이트 구동회로 및 이를 포함하는 표시장치
US8947158B2 (en) * 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2014042116A1 (ja) * 2012-09-11 2014-03-20 シャープ株式会社 半導体装置および表示装置
US9690418B2 (en) 2012-09-14 2017-06-27 Sharp Kabushiki Kaisha Touch panel and touch panel integrated display device
KR101441958B1 (ko) * 2012-09-28 2014-09-18 엘지디스플레이 주식회사 박막트랜지스터 보상회로를 포함하는 액정표시장치
CN102968229A (zh) * 2012-11-07 2013-03-13 江苏美琪威电子科技有限公司 电容式触摸屏感应器的充电电流补偿方法及系统
WO2014141800A1 (ja) * 2013-03-12 2014-09-18 シャープ株式会社 シフトレジスタ回路、駆動回路、及び表示装置
US9041453B2 (en) 2013-04-04 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Pulse generation circuit and semiconductor device
US9966040B2 (en) * 2013-04-25 2018-05-08 Sharp Kabushiki Kaisha Display device and driving method thereof
US20140374744A1 (en) * 2013-06-19 2014-12-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9455349B2 (en) * 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
US9136864B1 (en) * 2014-02-26 2015-09-15 Maxim Integrated Products, Inc. Method for trimming segment currents in current steering DAC based on most back gate voltage modulation
JP2015169811A (ja) * 2014-03-07 2015-09-28 株式会社Joled 表示装置、及び、表示装置を備えた電子機器
WO2015136413A1 (en) 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9953605B2 (en) * 2014-06-06 2018-04-24 Sharp Kabushiki Kaisha Active matrix substrate and display panel
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
KR102281755B1 (ko) * 2014-09-16 2021-07-27 삼성디스플레이 주식회사 유기전계발광 표시장치
KR102278875B1 (ko) * 2015-01-14 2021-07-20 삼성디스플레이 주식회사 게이트 구동회로 및 이를 포함하는 표시장치
KR102431311B1 (ko) * 2015-01-15 2022-08-12 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 표시 장치
KR102244015B1 (ko) * 2015-01-29 2021-04-27 삼성디스플레이 주식회사 게이트 구동회로를 포함하는 표시 장치
US10553690B2 (en) 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102457156B1 (ko) * 2015-09-09 2022-10-24 삼성디스플레이 주식회사 게이트 구동회로를 포함하는 표시 장치 및 그것의 구동 방법
SG10201607278TA (en) * 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
US10297331B2 (en) 2015-10-30 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
KR102481068B1 (ko) 2016-01-04 2022-12-27 삼성디스플레이 주식회사 표시장치
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
WO2018016178A1 (ja) 2016-07-20 2018-01-25 三菱電機株式会社 シフトレジスタ回路および表示パネル
CN106683631B (zh) * 2016-12-30 2018-06-22 深圳市华星光电技术有限公司 一种igzo薄膜晶体管的goa电路及显示装置
US10504470B2 (en) 2017-02-07 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device
CN110998863A (zh) 2017-07-31 2020-04-10 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR102527817B1 (ko) 2018-04-02 2023-05-04 삼성디스플레이 주식회사 표시 장치
US11626875B2 (en) * 2018-04-20 2023-04-11 Texas Instruments Incorporated Stress reduction on stacked transistor circuits
US11831309B2 (en) 2018-04-20 2023-11-28 Texas Instruments Incorporated Stress reduction on stacked transistor circuits
CN112639940A (zh) * 2018-09-30 2021-04-09 深圳市柔宇科技股份有限公司 阵列基板栅极驱动电路、薄膜晶体管及显示装置
JP2022078757A (ja) * 2020-11-13 2022-05-25 株式会社ジャパンディスプレイ 表示装置及び表示装置の駆動方法
CN115909978B (zh) * 2021-09-30 2024-08-06 乐金显示有限公司 栅极驱动电路以及包括栅极驱动电路的显示装置
KR20240106777A (ko) * 2022-12-29 2024-07-08 엘지디스플레이 주식회사 게이트 구동 회로 및 이를 포함하는 표시장치
CN119028291A (zh) * 2023-05-25 2024-11-26 北京小米移动软件有限公司 阵列基板栅极驱动电路、阵列基板、显示面板及电子设备
WO2026065124A1 (zh) * 2024-09-27 2026-04-02 京东方科技集团股份有限公司 一种阵列基板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462723B1 (en) * 1998-06-12 2002-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW200611229A (en) * 2004-09-16 2006-04-01 Semiconductor Energy Lab Co Ltd Display device and driving method of the same
JP2009251205A (ja) * 2008-04-04 2009-10-29 Sony Corp 表示装置と電子機器

Family Cites Families (157)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159260A (en) 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
FR2524679B1 (fr) * 1982-04-01 1990-07-06 Suwa Seikosha Kk Procede d'attaque d'un panneau d'affichage a cristaux liquides a matrice active
JPS5919486A (ja) * 1982-07-22 1984-01-31 Sony Corp 画像表示装置
JPH0756542B2 (ja) 1985-09-25 1995-06-14 カシオ計算機株式会社 液晶駆動回路
US4922240A (en) * 1987-12-29 1990-05-01 North American Philips Corp. Thin film active matrix and addressing circuitry therefor
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル,投写型表示装置及びビューファインダー
EP0438138B1 (en) * 1990-01-17 1995-03-15 Kabushiki Kaisha Toshiba Liquid-crystal display device of active matrix type
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
JPH04191723A (ja) 1990-11-27 1992-07-10 Toshiba Corp 液晶駆動装置
JP2688548B2 (ja) 1991-09-10 1997-12-10 シャープ株式会社 液晶パネル駆動用半導体装置
JP2997356B2 (ja) 1991-12-13 2000-01-11 京セラ株式会社 液晶表示装置の駆動方法
JP3212352B2 (ja) 1992-04-09 2001-09-25 カシオ計算機株式会社 表示駆動装置
JPH06180564A (ja) * 1992-05-14 1994-06-28 Toshiba Corp 液晶表示装置
JP3254007B2 (ja) * 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
US5807772A (en) 1992-06-09 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device with bottom gate connected to source or drain
CN1110789A (zh) 1993-03-30 1995-10-25 旭硝子株式会社 显示装置和用于显示装置的驱动方法
US5477073A (en) 1993-08-20 1995-12-19 Casio Computer Co., Ltd. Thin film semiconductor device including a driver and a matrix circuit
US5574475A (en) 1993-10-18 1996-11-12 Crystal Semiconductor Corporation Signal driver circuit for liquid crystal displays
JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JPH07134572A (ja) 1993-11-11 1995-05-23 Nec Corp アクティブマトリクス型液晶表示装置の駆動回路
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5570105A (en) 1993-12-25 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Driving circuit for driving liquid crystal display device
JP3442449B2 (ja) 1993-12-25 2003-09-02 株式会社半導体エネルギー研究所 表示装置及びその駆動回路
JP2734962B2 (ja) 1993-12-27 1998-04-02 日本電気株式会社 薄膜トランジスタ及びその製造方法
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH10512081A (ja) 1994-10-19 1998-11-17 インテル・コーポレーション フラッシュ・メモリ用電圧源
JP3630489B2 (ja) * 1995-02-16 2005-03-16 株式会社東芝 液晶表示装置
US6396078B1 (en) * 1995-06-20 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a tapered hole formed using multiple layers with different etching rates
JP3286152B2 (ja) 1995-06-29 2002-05-27 シャープ株式会社 薄膜トランジスタ回路および画像表示装置
JPH11505377A (ja) * 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JP3708554B2 (ja) 1995-08-04 2005-10-19 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP3647523B2 (ja) 1995-10-14 2005-05-11 株式会社半導体エネルギー研究所 マトリクス型液晶表示装置
JP3409542B2 (ja) 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
US5814834A (en) 1995-12-04 1998-09-29 Semiconductor Energy Laboratory Co. Thin film semiconductor device
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JP3759999B2 (ja) * 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 半導体装置、液晶表示装置、el装置、tvカメラ表示装置、パーソナルコンピュータ、カーナビゲーションシステム、tvプロジェクション装置及びビデオカメラ
JP3424891B2 (ja) * 1996-12-27 2003-07-07 三洋電機株式会社 薄膜トランジスタの製造方法および表示装置
JPH10229197A (ja) 1997-02-17 1998-08-25 Sanyo Electric Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法
US6569716B1 (en) * 1997-02-24 2003-05-27 Sanyo Electric Co., Ltd. Method of manufacturing a polycrystalline silicon film and thin film transistor using lamp and laser anneal
US6010923A (en) * 1997-03-31 2000-01-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
JP3376247B2 (ja) * 1997-05-30 2003-02-10 株式会社半導体エネルギー研究所 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
US6197624B1 (en) * 1997-08-29 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of adjusting the threshold voltage in an SOI CMOS
JP3552500B2 (ja) * 1997-11-12 2004-08-11 セイコーエプソン株式会社 論理振幅レベル変換回路,液晶装置及び電子機器
TW415898B (en) * 1998-05-14 2000-12-21 Cho Youn Soo Method for manufacturing the rim of a steering wheel for vehicles
US5917199A (en) * 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
JP2006237624A (ja) * 1998-06-12 2006-09-07 Semiconductor Energy Lab Co Ltd 半導体装置及びインバータ回路
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP4386978B2 (ja) * 1998-08-07 2009-12-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
US6512271B1 (en) * 1998-11-16 2003-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
EP1020839A3 (en) * 1999-01-08 2002-11-27 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving circuit therefor
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001284592A (ja) * 2000-03-29 2001-10-12 Sony Corp 薄膜半導体装置及びその駆動方法
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
EP1443130B1 (en) * 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP4069648B2 (ja) * 2002-03-15 2008-04-02 カシオ計算機株式会社 半導体装置および表示駆動装置
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005251348A (ja) 2004-03-08 2005-09-15 Casio Comput Co Ltd シフトレジスタ回路及びその駆動制御方法
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
RU2358354C2 (ru) * 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Светоизлучающее устройство
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
EP1815530B1 (en) * 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
KR100998527B1 (ko) * 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 비정질 산화물 및 전계 효과 트랜지스터
KR101142996B1 (ko) * 2004-12-31 2012-05-08 재단법인서울대학교산학협력재단 표시 장치 및 그 구동 방법
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI481024B (zh) * 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577231B (zh) * 2005-11-15 2013-01-02 株式会社半导体能源研究所 半导体器件及其制造方法
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5079425B2 (ja) * 2006-08-31 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP4932415B2 (ja) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
KR101340512B1 (ko) * 2006-12-01 2013-12-12 삼성디스플레이 주식회사 반도체 칩 패키지 및 이를 포함하는 인쇄 회로 기판어셈블리
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) * 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
JP5049691B2 (ja) * 2007-08-06 2012-10-17 株式会社日立製作所 半導体集積回路
JP2009094927A (ja) * 2007-10-11 2009-04-30 Seiko Epson Corp バッファ、レベルシフト回路及び表示装置
JP5344449B2 (ja) * 2007-12-14 2013-11-20 国立大学法人島根大学 半導体多結晶薄膜及び半導体装置
US8202365B2 (en) * 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5264197B2 (ja) * 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
JP2009207041A (ja) * 2008-02-29 2009-09-10 Seiko Epson Corp 電気回路、電気光学装置、電子機器、および電気回路の制御方法
JP5602390B2 (ja) * 2008-08-19 2014-10-08 富士フイルム株式会社 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101259727B1 (ko) * 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462723B1 (en) * 1998-06-12 2002-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW200611229A (en) * 2004-09-16 2006-04-01 Semiconductor Energy Lab Co Ltd Display device and driving method of the same
JP2009251205A (ja) * 2008-04-04 2009-10-29 Sony Corp 表示装置と電子機器

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JP5178801B2 (ja) 2013-04-10
WO2011052368A1 (en) 2011-05-05
CN102484471A (zh) 2012-05-30
JP2011120221A (ja) 2011-06-16
TW201626350A (zh) 2016-07-16

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