JP5344449B2 - 半導体多結晶薄膜及び半導体装置 - Google Patents
半導体多結晶薄膜及び半導体装置 Download PDFInfo
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- JP5344449B2 JP5344449B2 JP2007322712A JP2007322712A JP5344449B2 JP 5344449 B2 JP5344449 B2 JP 5344449B2 JP 2007322712 A JP2007322712 A JP 2007322712A JP 2007322712 A JP2007322712 A JP 2007322712A JP 5344449 B2 JP5344449 B2 JP 5344449B2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Description
J. J.J. Yang, P. D. Dapkus, R. D. Dupui, and R. D. Yingling, "Electrical propertiesof polycrystalline GaAs films", Journal of Applied Physics vol.51 (7) (1980)p.3794. T. P.Brody and H. E. Kunig, "A HIGH-GAIN InAs THIN-FILM TRANSISTOR", Applied PhysicsLetters vol.9 No.7 (1966) p.259. M. J.Lee, C. P. Judge, and S. W. Wright, "Thin film transistors for displays onplastic substrates", Solid-State Electronics vol.44 (2000) p.1431-p.1434 DennisW. Scott, Chrisoph Kadow, Yingda Dong, Yun Wei, Arthur C. Gossard, Mark J. W.Rodwell, "Low-resistance n-type polycrystalline InAs growth by molecular beamepitaxy", Journal of Crystal Growth 267 (2004) 35-41 DharamPal Gosain, Takahashi Noguchi, and Setsuo Usui, "High mobility Thin FilmTransistors Fabricated on a Plastic Substrate at a Processing Temperature of110℃", Japanese Journal of Applied Physics vol.39 (2000) pp.L179-L181. TilmanBeierlein, S. Strite, A. Dommann and David. J. Smith, "Properties of InGaNdeposited on Glass at Low Temperature", MRS Internet Journal of NitrideSemiconductor Reseach vol.2 (1997) p.29 KeonJae Lee, Matthew A. Meitl, Jong-Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, VipanKumar, and Ilsesanmi Adesida, "Bendable GaN high electron mobility transistorson plastic substrate", Journal of Applied Physics vol.100 (2006) p.124507. 高野章弘著、「薄膜太陽電池の開発最前線」、初版、株式会社エヌ・ティー・エス、2005年3月10日、p.99−111 山本憲治、「薄膜多結晶シリコン太陽電池」応用物理第71巻、第5号 (2002) p.522−p.527、図8
本発明の実施の形態1に係る半導体多結晶薄膜及び該半導体多結晶薄膜を有する半導体装置について図面を用いて説明する。
2 ボトムゲート電極
3 ボトムゲーム絶縁膜
4 ソース電極
5 ドレイン電極
6 In1-xGaxAs多結晶n型チャネル層
7 トップゲート絶縁膜
8 トップゲート電極
10 薄膜トランジスタ
16 In1-xGaxAs多結晶n型電子走行層
17 AlGaAs多結晶電子供給層
18 ゲート電極
20 ヘテロ型薄膜トランジスタ
21 プラスチック基板
24 n型用電極
26 n型In1-xGaxAs多結晶光吸収層
27 p型In1-xGaxAs多結晶光吸収層
28 p型用電極
30 太陽電池
Claims (6)
- 半導体装置のn型層に用いられる半導体多結晶薄膜であって、
該半導体多結晶薄膜は、多結晶のIn1-xGaxAs薄膜であり、そのGa組成xは0.l5≦x≦0.45を満たすことを特徴とする半導体多結晶薄膜。 - Ga組成xが0.l5≦x≦0.45を満たす、多結晶のIn1-xGaxAs薄膜をn型層として有することを特徴とする半導体装置。
- 請求項2に記載の半導体装置において、
前記In1-xGaxAs多結晶薄膜は、プラスチック基板上に形成されることを特徴とする半導体装置。 - Ga組成xが0.l5≦x≦0.45を満たす、多結晶のIn1-xGaxAs薄膜をn型チャネル層として有することを特徴とする薄膜トランジスタ。
- Ga組成xが0.l5≦x≦0.45を満たす、多結晶のIn1-xGaxAs薄膜をn型電子走行層として有し、前記In1-xGaxAs多結晶薄膜よりバンドギャップが大きい半導体多結晶薄膜を電子供給層として有することを特徴とするヘテロ接合型薄膜トランジスタ。
- Ga組成xが0.l5≦x≦0.45を満たす、多結晶のIn1-xGaxAs薄膜をn型光吸収層として有することを特徴とする太陽電池。
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JP2007322712A JP5344449B2 (ja) | 2007-12-14 | 2007-12-14 | 半導体多結晶薄膜及び半導体装置 |
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JP2007322712A JP5344449B2 (ja) | 2007-12-14 | 2007-12-14 | 半導体多結晶薄膜及び半導体装置 |
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JP2009147098A JP2009147098A (ja) | 2009-07-02 |
JP5344449B2 true JP5344449B2 (ja) | 2013-11-20 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011052368A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device including the driver circuit, and electronic device including the display device |
CN114991634B (zh) * | 2022-06-29 | 2024-04-16 | 浙江极氪智能科技有限公司 | 可调温玻璃和汽车 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60251666A (ja) * | 1984-05-28 | 1985-12-12 | Seiko Epson Corp | 薄膜トランジスタ |
JPH07335934A (ja) * | 1994-06-03 | 1995-12-22 | Mitsubishi Electric Corp | 光半導体素子,及びその製造方法 |
JPH0878665A (ja) * | 1994-09-01 | 1996-03-22 | Toshiba Corp | 電界効果トランジスタ |
JP2000077431A (ja) * | 1998-09-02 | 2000-03-14 | Hitachi Cable Ltd | 半導体装置用ウェハ及びその製造方法 |
JP3472830B2 (ja) * | 2001-03-27 | 2003-12-02 | 東北大学長 | 多元系多結晶太陽電池及びその製造方法 |
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