TWI529856B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI529856B
TWI529856B TW099141729A TW99141729A TWI529856B TW I529856 B TWI529856 B TW I529856B TW 099141729 A TW099141729 A TW 099141729A TW 99141729 A TW99141729 A TW 99141729A TW I529856 B TWI529856 B TW I529856B
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TW
Taiwan
Prior art keywords
oxide semiconductor
semiconductor layer
layer
insulating layer
transistor
Prior art date
Application number
TW099141729A
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English (en)
Chinese (zh)
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TW201138026A (en
Inventor
山崎舜平
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW201138026A publication Critical patent/TW201138026A/zh
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Publication of TWI529856B publication Critical patent/TWI529856B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW099141729A 2009-12-11 2010-12-01 半導體裝置 TWI529856B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009281949 2009-12-11

Publications (2)

Publication Number Publication Date
TW201138026A TW201138026A (en) 2011-11-01
TWI529856B true TWI529856B (zh) 2016-04-11

Family

ID=44141911

Family Applications (4)

Application Number Title Priority Date Filing Date
TW099141729A TWI529856B (zh) 2009-12-11 2010-12-01 半導體裝置
TW105105298A TWI578444B (zh) 2009-12-11 2010-12-01 半導體裝置
TW102143759A TWI534954B (zh) 2009-12-11 2010-12-01 半導體裝置
TW106100876A TWI622130B (zh) 2009-12-11 2010-12-01 半導體裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW105105298A TWI578444B (zh) 2009-12-11 2010-12-01 半導體裝置
TW102143759A TWI534954B (zh) 2009-12-11 2010-12-01 半導體裝置
TW106100876A TWI622130B (zh) 2009-12-11 2010-12-01 半導體裝置

Country Status (6)

Country Link
US (5) US8809850B2 (https=)
JP (13) JP2011142314A (https=)
KR (3) KR101894821B1 (https=)
CN (2) CN102656683B (https=)
TW (4) TWI529856B (https=)
WO (1) WO2011070928A1 (https=)

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TWI615920B (zh) * 2010-08-06 2018-02-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
KR101940570B1 (ko) * 2011-05-13 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｅｌ 표시 장치 및 그 전자 기기
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TWI584383B (zh) * 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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JP5826716B2 (ja) * 2012-06-19 2015-12-02 株式会社東芝 半導体装置及びその製造方法
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
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TWI581404B (zh) * 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
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