TWI390624B - 用於電漿處理裝置之蓮蓬頭電極組合物 - Google Patents

用於電漿處理裝置之蓮蓬頭電極組合物 Download PDF

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TWI390624B
TWI390624B TW093140137A TW93140137A TWI390624B TW I390624 B TWI390624 B TW I390624B TW 093140137 A TW093140137 A TW 093140137A TW 93140137 A TW93140137 A TW 93140137A TW I390624 B TWI390624 B TW I390624B
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thermal control
thermal
showerhead electrode
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William S Kennedy
David E Jacob
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Lam Res Corp
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Description

用於電漿處理裝置之蓮蓬頭電極組合物
本發明係關於用於電漿處理裝置之蓮蓬頭電極組合。
電漿處理裝置係用以藉由包含以下之技術而處理基板：蝕刻、物理汽相沈積(PVD)、化學汽相沈積(CVD)、離子植入與光阻移除。用於電漿處理之一種類型的電漿處理裝置包含一包括上電極與底部電極的反應室。電場係建立在電極之間以激發處理氣體進入電漿狀態，從而處理反應室中的基板。
本發明提供一種半導體基板處理裝置之蓮蓬頭電極組合物，與用以支撐半導體基板處理室中的蓮蓬頭電極之熱控制板。
用以支撐半導體基板處理室中的蓮蓬頭電極之熱控制板之較佳具體實施例包括：金屬外部部分，其係可移除地附於溫度控制頂板；與金屬內部部分，其係可移除地附於蓮蓬頭電極與頂板。熱控制板之內部部分提供頂板與蓮蓬頭電極之間的熱及電性路徑。
用於電漿處理裝置的蓮蓬頭電極組合物之較佳具體實施例包括頂板、蓮蓬頭電極與熱控制板。熱控制板係附於蓮蓬頭電極與頂板，以便熱控制板之中心部分可相對於頂板而移動。至少一個熱橋接器係提供在熱控制板之中心部分與頂板之間。熱橋接器提供蓮蓬頭電極與頂板之間的熱及 電性路徑。
熱橋接器較佳包含潤滑材料以允許熱控制板與頂板之相對表面之間的滑動並且提供其間的熱及電性傳導。
另一較佳具體實施例提供處理半導體基板處理室中的半導體基板之方法，其包括：(a)將基板放置於基板支撐上，其包含半導體基板處理裝置之電漿室中的底部電極；(b)採用依據較佳具體實施例的蓮蓬頭電極組合物供應處理氣體於電漿室中；(c)採用電漿室中的處理氣體在蓮蓬頭電極組合物與基板之間產生電漿；(d)採用電漿處理基板；(e)終止電漿之產生；以及(f)從電漿室中移除基板。蓮蓬頭電極組合物較佳包括加熱器。在另一較佳具體實施例中，該方法包括在(e)之後啟動加熱器以施加熱於蓮蓬頭電極，從而將蓮蓬頭電極維持在所需溫度，及/或在(a)至(f)期間啟動加熱器以施加熱於蓮蓬頭電極。
圖1解說用於其中處理半導體基板(例如矽晶圓)之電漿處理裝置的蓮蓬頭電極組合物10之較佳具體實施例。蓮蓬頭電極組合物10(圖1僅顯示其一半)包括：包含頂部電極20及固定至頂部電極20的可選擇襯墊構件40之蓮蓬頭電極、熱控制板58與頂板80。頂板80可以形成電漿處理裝置(例如電漿蝕刻室)之可移除頂壁。
包含底部電極與可選擇靜電夾電極之基板支撐15(圖1僅顯示其一部分)，係固定在電漿處理裝置之真空處理室中的頂部電極20下面。受電漿處理的基板16係機械式或靜電式 夾在基板支撐15之上支撐表面17上。
蓮蓬頭電極之頂部電極20較佳包含內部電極構件22與可選擇外部電極構件24。內部電極構件22較佳為圓筒形板(例如單晶矽)。若該板係由單晶矽製造，則內部電極構件22可以具有小於、等於或大於要處理的晶圓之直徑，例如達12英吋(300 mm)，其為目前可用的單晶矽材料之最大直徑。為了處理300 mm晶圓，提供外部電極構件24以將頂部電極20之直徑從約15英吋擴大至約17英吋。外部電極構件24可以為連續構件(例如多晶矽構件，如環)，或片段構件(例如配置在環組態中的2至6個分離片段，如單晶矽之片段)。在包含多個片段外部電極構件24的頂部電極20之具體實施例中，片段較佳具有彼此重疊的邊緣，以保護底下的焊接材料不會曝露於電漿。內部電極構件22較佳包含多個氣體通道23，以將處理氣體噴入頂部電極20與底部電極15之間有電漿反應室之空間中。
單晶矽為用於內部電極構件22與外部電極構件24之電漿曝露表面的較佳材料。高純度單晶矽可在電漿處理期間最小化基板之污染，因為其僅將最小量之不合需要的元素引入反應室中，並且還在電漿處理期間光滑地磨損，從而最小化粒子。用於頂部電極20之電漿曝露表面的替代材料包含例如SiC、SiN、AlN與Al2 O3 。
在較佳具體實施例中，蓮蓬頭電極組合物10大到足以處理較大的基板，例如具有300 mm之直徑的半導體晶圓。對於300 mm晶圓而言，頂部電極20的直徑為至少300 mm。然 而可以將蓮蓬頭電極組合物的尺寸定為處理具有非圓形組態的其他晶圓尺寸或基板。
襯墊構件40較佳包含襯墊板42與襯墊環44。在此類具體實施例中，內部電極構件22係與襯墊板42共同延伸，而外部電極構件24係與周圍襯墊環44共同延伸。然而襯墊板42可以延伸至超出內部電極構件，以便單一襯墊板可用以支持內部電極構件與片段外部電極構件。較佳藉由焊接材料(例如彈性焊接材料)，將內部電極構件22與外部電極構件24附於襯墊構件40。襯墊板42包含氣體通道43，其係與內部電極構件22中的氣體通道23對準，以提供氣體流進入電漿處理室。氣體通道43通常可以具有約0.04英吋的直徑，而氣體通道23通常可以具有約0.025英吋的直徑。
襯墊板42及襯墊環44較佳係由與用以處理電漿處理室中的半導體基板之處理氣體化學相容的材料製造，並且具有接近匹配電極材料之熱膨脹係數的熱膨脹係數，及/或係導電及導熱的。可用以製造襯墊構件40的較佳材料包含但不限於石墨及SiC。
採用導熱及導電彈性物焊接材料，可以將頂部電極20附於襯墊板42及襯墊環44，該材料適應熱應力並且轉移頂部電極20與襯墊板42及襯墊環44之間的熱及電能量。用以將電極組合物之表面焊接在一起的彈性物，係說明在(例如)共同擁有的美國專利第6,073,577號中，其全部係以引用的方式併入本文中。
較佳採用可以為螺栓、螺釘或類似物之合適緊固件將襯 墊板42及襯墊環44附於熱控制板58。例如，可以將螺栓(圖中未顯示)插入熱控制板58之孔中，並且旋入襯墊構件40之開口中。
參考圖1與圖2，熱控制板58包括金屬內部部分，其包含具有上表面60的成形板59，以及具有第一熱轉移表面62之第一凸出部分61，與具有上表面上的第二熱轉移表面64之第二凸出部分63。在其他較佳具體實施例中，熱控制板58可以包含二個以上的凸出部分，例如三個或更多凸出部分。採用緊固件將熱控制板58附於頂板80，該緊固係穿過頂板中的超大尺寸開口(圖中未顯示)，並進入第一凸出部分61之表面62與第二凸出部分63之表面64中的螺紋開口65(圖2)。熱控制板58還包含螺紋開口117以接收緊固件，從而將熱控制板58可移除地附於襯墊板42。頂板80中的超大尺寸開口提供緊固件周圍的間隙，以便熱控制板58可以相對於頂板而滑動，從而適應熱控制板相對於頂板之熱膨脹失配。
熱控制板58還包含彎曲部分66，其將內部部分連接至外部部分而且包含具有上表面70的凸緣68，其係保持成對抗頂板80之相對表面。第一熱轉移表面62與第二熱表面轉移表面64較佳具有環形組態。第一凸出部分61與第二凸出部分63較佳具有從約0.25英吋至約0.75英吋的高度，以及從約0.75英吋至約1.25英吋的寬度。然而第一凸出部分61及/或第二凸出部分63可以具有非環形組態，例如弓形片段、多面形、圓形、卵形或其他組態。
熱控制板58較佳係由金屬材料(例如鋁、鋁合金或類似金屬)製造。熱控制板58較佳為金屬材料(例如鋁、鋁合金)之加工件。頂板80較佳係由鋁或鋁合金製成。頂板80較佳包含一或多個流動通道88，可以透過該等流動通道而循環溫度控制流體(較佳為液體)，以將頂板維持在所需溫度。
於在處理室中處理半導體基板期間，經由自第一熱轉移表面62、第二熱轉移表面64的熱傳導並且透過上表面70，將熱從內部電極構件22及外部電極構件24與襯墊板42及襯墊環44轉移至頂板80之下表面82。換言之，第一凸出部分61與第二凸出部分63還提供內部電極構件22、外部電極構件24、襯墊板42與襯墊環44之間的熱橋接器給頂板80。在橫跨熱控制板58之間隔位置之此增強的熱轉移，可以達到徑向橫跨頂部電極20的實質均勻溫度分佈。
在蓮蓬頭電極組合物10之操作期間，熱控制板58與頂板80得到加熱並且進行熱膨脹。結果，頂板80與熱控制板58可以相對於彼此而滑動。此滑動可以磨傷頂板80及/或熱控制板58之彼此接觸的表面(例如熱控制板58之中心部分的一或多個表面)，並且引起粒子(例如鋁粒子)從接觸表面上被驅逐。鬆散粒子可能會污染反應室中的基板，並因此減小處理產量。
已決定藉由將具有潤滑性的材料放置在相對表面之間，可以最小化頂板80及/或熱控制板58之相對表面的磨傷。在較佳具體實施例中，將至少一層潤滑材料90放置在熱控制板58之第一熱轉移表面62及第二熱轉移表面64，與頂板80 之下表面82之間。
潤滑材料90具有足夠的熱及電性傳導性，來提供自第一熱轉移表面62與第二熱轉移表面64的足夠熱轉移及電性傳導給頂板80。提供該等特性的較佳材料為彈性可變形石墨材料，例如「GRAFOIL」，其可以商業方式從美國俄亥俄州克里夫蘭市UCAR Carbon公司獲得。潤滑材料90較佳為以下墊圈：其具有較佳厚度約0.010英吋至約0.030英吋，更佳約0.015英吋。潤滑材料90較佳為環形墊圈，各墊圈係保留在形成於第一熱轉移表面62與第二熱轉移表面64之各表面上的個別環形凹入部分中。
潤滑材料90較佳係保護成不曝露於反應室中的電漿。在較佳具體實施例中，潤滑材料90係置放在真空密封件之間，例如一對可選擇O形環104，其係保留在熱控制板58之第一熱轉移表面62與第二熱轉移表面64之間隔環形溝渠105中。O形環104將潤滑材料90與電漿室中的真空環境隔離，從而保護潤滑材料不曝露於電漿。第一熱轉移表面62與第二熱轉移表面64較佳係藉由潤滑材料90與頂板80之下表面82隔開達足夠的距離，以便沿第一熱轉移表面62或第二熱轉移表面64不存在金屬對金屬之滑動接觸。
熱控制板58較佳包含至少一個加熱器，其可操作以與溫度控制頂板80配合，從而控制頂部電極20之溫度。例如在較佳具體實施例中，加熱器係提供在熱控制板58之上表面上並且包含由第一凸出部分61所包圍的第一加熱器區域72、第一凸出部分61與第二凸出部分63之間的第二加熱器 區域74、以及第二凸出部分63與彎曲部分66之間的第三加熱器區域76。可以改變加熱器區域之數量，例如在其他具體實施例中加熱器可以包含單一加熱器區域、二個加熱器區域、或三個以上的加熱器區域。另外可以將加熱器提供在熱控制板58之底表面上。
加熱器較佳包括層壓物，其包含置放在可以經受加熱器所達到的操作溫度之聚合材料之相對層之間的電阻式加熱材料。可以使用的示範性聚合材料為聚醯亞胺，其銷售商標為Kapton7，該材料可以商來方式從E.I.du Pont de Nemours and Company公司獲得。或者，加熱器可以為嵌入在熱控制板中的電阻加熱器(例如鑄造熱控制板中的加熱元件，或定位在形成於熱控制板中之通道中的加熱元件)。加熱器之另一具體實施例包含安裝於熱控制板之上表面及/或下表面上的電阻加熱元件。經由傳導及/或輻射可達到熱控制板之加熱。
加熱器材料可以具有任一合適圖案，其提供第一加熱器區域72、第二加熱器區域74與第三加熱器區域76之均勻加熱。例如層壓物加熱器可以具有電阻加熱線路之規則或不規則圖案，例如之字形、蛇形或同心圖案。藉由與溫度控制頂板80之操作配合，採用加熱器對熱控制板58進行加熱，可以在蓮蓬頭電極組合物10之操作期間橫跨頂部電極20而提供所需溫度分佈。
藉由任一合適技術(例如施加熱與壓力、黏結劑、緊固件或類似物)，可以將定位在第一加熱器區域72、第二加熱器 區域74與第三加熱器區域76中的加熱器區段固定至熱控制板58。
在較佳具體實施例中，經由電性連接器77而電性互連第一加熱器區域72、第二加熱器區域74與第三加熱器區域76。在較佳具體實施例中，加熱器包括三個電路，其包含：第一電阻加熱導體，其係調適成接收第一相位中的交流電流；第二電阻加熱導體，其係調適成接收第二相位中的交流電流；與第三電阻加熱導體，其係調適成接收第三相位中的交流電流，其中第一相位、第二相位與第三相位係彼此異相120E。
如圖3所示，加熱器可以從單一電源110接收電。在較佳具體實施例中，電源110係電性連接至三個圓周式間隔柱形物，例如接收在熱控制板58之凸緣68之開口93中的柱形物95。柱形物95係分別連接至電性導體97，其穿過凸緣68至靴形物79，並且電性接觸定位在第三加熱器區域76中的三相加熱器之個別相位。第三加熱器76之三個相位係經由連接77而電性連接至第二加熱器之三個對應相位，並且第二加熱器之三個相位係藉由連接77而電性連接至第一加熱器之三個相位。
熱控制板58較佳包含橫向氣體通道75，以使處理氣體可從第一加熱器區域72上的氣室橫向流向第二加熱器區域74上的氣室，並且從第二加熱器區域74上的氣室流向第三加熱器區域76上的氣室。在較佳具體實施例中，複數個氣體通道75穿過第一凸出部分61與第二凸出部分63。將氣體通 道75的尺寸定為使電性連接器77可穿過氣體通道75，以電性連接第一加熱器區域72、第二加熱器區域74與第三加熱器區域76。氣體通道75較佳係足夠大，以使處理氣體可分配在熱控制板58之上表面上，從而提供穿過與熱控制板與襯墊構件40之間的氣室進行通信之開口78的氣體之均勻壓力分佈。
頂部電極20可加以電性接地，或者較佳藉由射頻(RF)電流源而可加以供電。在較佳具體實施例中，對頂部電極20進行接地，並且將具有一或多個頻率的電源施加於底部電極，以在電漿處理室中產生電漿。例如可以藉由二個獨立控制射頻電源，採用2 MHz及27 MHz之頻率對底部電極供電。在已處理基板(例如已對半導體基板進行電漿蝕刻)之後，切斷供應給底部電極的電源以終止電漿產生。從電漿處理室移除所處理的基板，並且將另一基板放置於基板支撐15上以進行電漿處理。在較佳具體實施例中，啟動加熱器以對熱控制板58進行加熱，並且當切斷供應給底部電極的電源時，進而對頂部電極20進行加熱。結果，較佳防止頂部電極20溫度減小至所需最小溫度以下。較佳將頂部電極20之溫度維持在接近連續基板處理運行之間的恆定溫度，以便更均勻地處理基板，從而改進處理產量。較佳可將電源110控制成根據頂部電極20之實際溫度與所需溫度，在所需位準及速率情況下供電給加熱器。
蓮蓬頭電極組合物10可以包含一或多個溫度感測器(例如熱耦器)，以監視頂部電極20之溫度。較佳藉由控制自電 源110至加熱器的電源供應之控制器而監視溫度感測器。當由溫度感測器所提供的資料指示頂部電極20之溫度係在預定溫度以下時，可以藉由控制器啟動電源110以供電給加熱器，從而將頂部電極20維持在或超過預定溫度。
還可以在基板之電漿處理期間啟動加熱器，即當於蓮蓬頭電極組合物10與底部電極之間產生電漿時。例如在利用施加的相對較低位準電源來產生電漿之電漿處理操作期間，可以啟動加熱器以將頂部電極20之溫度維持在所需溫度範圍內。在利用相對較高電源位準之其他電漿處理操作(例如介電材料蝕刻處理)期間，頂部電極20之溫度通常保持在連續運行之間的足夠高溫，以便不需要啟動加熱器來防止頂部電極降低至最小溫度以下。
在圖3所示的具體實施例中，熱控制板58之彎曲部分66包括延伸至凸緣68的圓筒形壁。例如藉由分別插入頂板80與凸緣68中的對準開口84、86之緊固件(例如螺栓、螺釘或類似物)(圖1)，將凸緣68附於頂板80。凸緣68較佳具有環形組態。彎曲部分66具有可適應熱控制板58相對於頂板80之熱膨脹與收縮的組態。也就是說，彎曲部分66較佳具有一長度對厚度比，其係最佳化成適應頂板80及熱控制板58之中心部分之間的橫向及軸向移動，並且防止對熱控制板58的相關聯損害。在橫向滑動移動期間，潤滑材料90可以防止熱控制板58之熱轉移表面62與64以及頂板80之下表面82之磨傷。藉由提供彎曲部分66，可以在凸緣68之頂部表面70與頂板80之下表面82之間省去潤滑材料。
採用合適緊固件，將熱控制板58可移除地附於頂板80，該緊固件穿過頂板80中的開口84並且進入形成於凸緣68中的開口86。在一項具體實施例中，蓮蓬頭電極組合物10包括附於頂板80之頂側122的蓋板120。蓋板120密封頂板80中的開口之頂端，以便該等開口中的緊固件係在處理裝置之真空壓力中。然而，藉由提供開口86周圍的真空密封(例如可以將O形環104提供在包含開口86的區段周圍)，可以省去蓋板。在圖2中，O形環提供三個真空密封區段，各區段包含六個隔開的開口84。
在熱控制板58之具體實施例中，其中第一凸出部分61與第二凸出部分63分別包含O形環104以提供熱控制板58與頂板80之間的真空密封區域，若螺栓之頂部未密封，則將頂板80附於熱控制板58的緊固件可以曝露於處理裝置中的大氣壓力。
將複數個圓周式間隔插針106可選擇地提供在熱控制板58之凸緣68上。將對準插針106的尺寸定為配合頂板80中的對準開口(圖中未顯示)，以相對於頂板80而圓周式及徑向對準熱控制板58。
頂板80較佳包含一或多個氣體流動通道，以將處理氣體引入頂板80與熱控制板58之間的一或多個敞開空間(氣室)。例如處理氣體可以僅供應給第一加熱器上的控制氣室，並且經由通道75而分配給其他氣室。處理氣體係從上氣室流經通道78進入下氣室，並接著流經襯墊板42中的氣體通道43以及內部電極構件22中的氣體通道23。將氣體通 道78的尺寸定為透過熱控制板58提供所需壓力降落。氣體通道78通常可以具有約0.3英吋的直徑。較佳選擇氣體通道78之數量與配置，以達到頂部電極20上及橫跨該電極的均勻氣體壓力，從而提供均勻氣體分佈給電漿室。蓮蓬頭電極組合物10可選擇地包含上氣室及/或下氣室中的擋板，以控制氣流之均勻度。
較佳藉由使熱轉移流體(液體或氣體)流經流動通道88而控制頂板80之溫度。頂板80較佳提供電性接地以及散熱片用於蓮蓬頭電極組合物10。
如圖2所示，將開口114提供在熱控制板58之凸緣68中，用於可提供在蓮蓬頭電極組合物10外部的電漿限制組合物之控制桿的通道。包含垂直可調整電漿限制環組合物的合適電漿限制組合物係說明在共同擁有的美國專利第5,534,751號中，其全部係以引用的方式併入本文中。
雖然已參考本發明之特定具體實施例而詳細地說明本發明，但是熟習此項技術者應明白可以進行各種改變及修改並且使用等效實施方案，而不脫離所附申請專利範圍之範疇。
10‧‧‧蓮蓬頭電極組合物
15‧‧‧基板支撐
16‧‧‧基板
17‧‧‧支撐表面
20‧‧‧頂部電極
22‧‧‧內部電極構件
23‧‧‧氣體通道
24‧‧‧外部電極構件
40‧‧‧襯墊構件
42‧‧‧襯墊板
43‧‧‧氣體通道
44‧‧‧襯墊環
58‧‧‧熱控制板
59‧‧‧成形板
60‧‧‧上表面
61‧‧‧第一凸出部分
62‧‧‧第一熱轉移表面
63‧‧‧第二凸出部分
64‧‧‧第二熱轉移表面
65‧‧‧螺紋開口
66‧‧‧彎曲部分
68‧‧‧凸緣
70‧‧‧上表面
72‧‧‧第一加熱器區域
74‧‧‧第一加熱器區域
75‧‧‧氣體通道
76‧‧‧第一加熱器區域
77‧‧‧電性連接器
79‧‧‧靴形物
80‧‧‧頂板
82‧‧‧下表面
84‧‧‧開口
86‧‧‧開口
88‧‧‧流動通道
90‧‧‧潤滑材料
93‧‧‧開口
95‧‧‧柱形物
97‧‧‧電性導體
104‧‧‧O形環
105‧‧‧隔環形溝渠
106‧‧‧插針
110‧‧‧電源
114‧‧‧開口
117‧‧‧螺紋開口
120‧‧‧蓋板
122‧‧‧頂側
圖1解說用於電漿處理裝置的蓮蓬頭電極組合物與基板支撐之較佳具體實施例之一部分。
圖2為無頂板的蓮蓬頭電極組合物之較佳具體實施例之俯視透視圖。
圖3解說蓮蓬頭電極組合物之電源與加熱器之間的示範 性電性連接。
10‧‧‧蓮蓬頭電極組合物
15‧‧‧基板支撐
16‧‧‧基板
17‧‧‧支撐表面
20‧‧‧頂部電極
22‧‧‧內部電極構件
23‧‧‧氣體通道
24‧‧‧外部電極構件
40‧‧‧襯墊構件
42‧‧‧襯墊板
43‧‧‧氣體通道
44‧‧‧襯墊環
58‧‧‧熱控制板
59‧‧‧成形板
60‧‧‧上表面
61‧‧‧第一凸出部分
62‧‧‧第一熱轉移表面
63‧‧‧第二凸出部分
64‧‧‧第二熱轉移表面
66‧‧‧彎曲部分
68‧‧‧凸緣
70‧‧‧上表面
72‧‧‧第一加熱器區域
74‧‧‧第一加熱器區域
76‧‧‧第一加熱器區域
80‧‧‧頂板
82‧‧‧下表面
84‧‧‧開口
86‧‧‧開口
88‧‧‧流動通道
90‧‧‧潤滑材料
104‧‧‧O形環
105‧‧‧隔環形溝渠
106‧‧‧插針
110‧‧‧電源
117‧‧‧螺紋開口
120‧‧‧蓋板
122‧‧‧頂側

Claims (30)

  1. 一種用以支撐一半導體基板處理室中一蓮蓬頭電極之熱控制板，其包括：一包含一環形凸緣之金屬外部部分，其係調適成可移除地附於一溫度控制頂板；以及一包含一成形板金屬內部部分，該內部部分包括多個開口以接收緊固件而可移除地將該內部部分附於該蓮蓬頭電極與該頂板，該內部部分提供該頂板與該蓮蓬頭電極之間的一熱及電性路徑。
  2. 如請求項1之熱控制板，其中該成形板包括一上表面及該上表面上的一環形第一凸出部分，該第一凸出部分包含調適成轉移熱至該頂板的一第一熱轉換表面，以及各配置成接收該頂板與該第一熱轉移表面之間的一可選擇O形環之可選擇隔開環形溝渠。
  3. 如請求項2之熱控制板，其中該成形板包括在該上表面上並且與該第一凸出部分徑向間隔的一環形第二凸出部分，該第二凸出部分包含調適成轉移熱至該頂板的一第二熱轉換表面，以及各配置成接收該頂板與該第二熱轉移表面之間的一可選擇O形環之可選擇隔開環形溝渠。
  4. 如請求項1之熱控制板，其中該內部部分包括至少一個熱橋接器，其提供該頂板與該蓮蓬頭電極之間的一熱及電性路徑。
  5. 如請求項1之熱控制板，其中該外部部分包含：對準插針，其係調適成配合該頂板中的對準開口，以提供該熱 控制板與該頂板之間的圓周與徑向對準；螺紋開口，其係調適成接收穿過該頂板之一底側的螺栓；以及可選擇溝渠，其各係調適成接收該頂板與該熱控制板之間的一可選擇O形環。
  6. 如請求項1之熱控制板，其進一步包括至少一個加熱器，其可操作以供應熱給該蓮蓬頭電極。
  7. 如請求項6之熱控制板，其中該加熱器包括該成形板之一中心區域中的一內部加熱器區段，以及在該成形板之中心區域外部的至少一個外部加熱器區段，該內部加熱器區段與該外部加熱器區段係藉由至少一個電性連接器而互連。
  8. 如請求項6之熱控制板，其中該加熱器包括一層壓物，其包含介電層之間的一電阻加熱材料。
  9. 如請求項6之熱控制板，其中該加熱器包括一三相加熱器。
  10. 如請求項6之熱控制板，其中該加熱器包括三個電路，其包含：一第一電阻加熱導體，其係調適成接收一第一相位中的交流電流；一第二電阻加熱導體，其係調適成接收一第二相位中的交流電流；與一第三電阻加熱導體，其係調適成接收一第三相位中的交流電流，該第一相位、該第二相位與該第三相位係彼此異相120°。
  11. 如請求項1之熱控制板，其進一步包括在該內部部分之相對側之間延伸的氣體通道。
  12. 如請求項1之熱控制板，其中該熱控制板係一金屬材料之 一單一件。
  13. 一種用於一半導體基板處理裝置之蓮蓬頭電極組合物，其包括：一頂板；一蓮蓬頭電極，其包括焊接至一襯墊板之一底表面之一電極板；如請求項1之熱控制板，其係附於該襯墊板之一頂表面與附於該頂板，以便該熱控制板之一中心部分可相對於該頂板而移動；一加熱器，其係調適以加熱該熱控制板；以及至少一個在該熱控制板之該中心部分與該頂板之間的熱橋接器，該熱橋接器提供該蓮蓬頭電極與該頂板之間的一熱及電性路徑。
  14. 如請求項13之蓮蓬頭電極組合物，其包括至少二個橫向隔開的熱橋接器。
  15. 如請求項14之蓮蓬頭電極組合物，其中該等熱橋接器之各熱橋接器包括一潤滑材料層，其提供該熱控制板與該頂板之間的熱及電性傳導性，該潤滑材料係可選擇地定位在包括至少一個O形環的一真空密封件內。
  16. 如請求項15之蓮蓬頭電極組合物，其中該等潤滑材料層之各潤滑材料層具有一環形組態以及從約0.75英吋至約1.25英吋之一寬度。
  17. 如請求項13之蓮蓬頭電極組合物，其中該加熱器為一三相加熱器。
  18. 如請求項13之蓮蓬頭電極組合物，其中該加熱器包括一層壓物，其包含一介電材料之相對層之間的一電阻加熱材料。
  19. 如請求項13之蓮蓬頭電極組合物，其中該頂板包含至少一個流動通道，一加熱轉移流體流經該流動通道以控制該頂板之該溫度。
  20. 如請求項13之蓮蓬頭電極組合物，其中該熱控制板包含一彎曲部分，其係配置成適應差動熱膨脹並且提供該頂板與該熱控制板之間的熱及電性傳導。
  21. 如請求項13之蓮蓬頭電極組合物，其中該電極板係一矽板且該襯墊板係藉由一彈性物焊接而焊接至該矽板之一上表面。
  22. 如請求項21之蓮蓬頭電極組合物，其中該襯墊板為一石墨襯墊板。
  23. 如請求項13之蓮蓬頭電極組合物，其中該熱控制板為鋁或一鋁合金之一加工件。
  24. 如請求項13之蓮蓬頭電極組合物，其中該頂板係採用穿過該頂板中的開口之緊固件而附於該熱控制板，該蓮蓬頭電極組合物可選擇地包含一蓋板，其係附於該頂板之一頂側並且密封該等開口，以便該等緊固件係曝露於該處理裝置中的真空壓力。
  25. 如請求項13之蓮蓬頭電極組合物，其中該頂板係採用緊固件而附於該熱控制板，該等緊固件穿過該頂板中的開口並且係旋入該至少一個熱橋接器中的螺紋開口中，該 等熱橋接器之各熱橋接器包括至少一個O形環，其提供該熱控制板與該頂板之間的一真空密封，以便該等緊固件係曝露於該處理裝置中的大氣壓力。
  26. 如請求項13之蓮蓬頭電極組合物，其中該頂板係採用穿過該頂板中的開口之緊固件而附於該熱控制板，該等開口具有大於該等緊固件之直徑的直徑，以適應該頂板與該熱控制板之間的差動熱膨脹。
  27. 如請求項13之蓮蓬頭電極組合物，其中該至少一個熱橋接器包括該熱控制板上的二個隔開環形凸出部分，該頂板係採用穿過該頂板中的超大尺寸開口並進入該等熱橋接器之各熱橋接器的緊固件而附於該熱控制板，而且該熱控制板包含透過該等凸出部分的橫向延伸氣體通道，以及在橫向定位於該等熱橋接器內部及外部的該熱控制板之相對表面之間的徑向延伸氣體通道。
  28. 一種處理一半導體基板處理室中一半導體基板之方法，其包括：a)放置一基板於一半導體基板處理裝置之一電漿室中的一基板支撐上，該基板支撐包含一底部電極；b)採用依據請求項14之蓮蓬頭電極組合物供應一處理氣體至該電漿室中；c)採用在蓮蓬頭電極組合物與該基板之間的該電漿室中的該處理氣體產生一電漿；d)採用該電漿處理該基板；e)終止該電漿之該產生；以及 f)從該電漿室中移除該基板。
  29. 如請求項28之方法，其中該蓮蓬頭電極組合物進一步包括一加熱器，該方法進一步包括在e)之後啟動該加熱器以施加熱於該蓮蓬頭電極，從而將該蓮蓬頭電極維持在一所需溫度。
  30. 如請求項29之方法，其進一步包括在a)至f)期間啟動該加熱器以施加熱於該蓮蓬頭電極。
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JP2011254097A (ja) 2011-12-15
KR20060129279A (ko) 2006-12-15
US8080107B2 (en) 2011-12-20
JP2007522647A (ja) 2007-08-09
TW200524038A (en) 2005-07-16
WO2005065186A3 (en) 2006-05-18
BRPI0417991A (pt) 2007-04-27
US20050133160A1 (en) 2005-06-23
WO2005065186A2 (en) 2005-07-21
US7645341B2 (en) 2010-01-12
US20100065214A1 (en) 2010-03-18
CN1977068A (zh) 2007-06-06
JP4870575B2 (ja) 2012-02-08
KR101345904B1 (ko) 2013-12-31
JP5497705B2 (ja) 2014-05-21

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