BRPI0417991A - montagens, sistemas e métodos de curativo de tecido formado por estruturas de esponja de polìmero hidrofìlico como, por exemplo, quitosana - Google Patents

montagens, sistemas e métodos de curativo de tecido formado por estruturas de esponja de polìmero hidrofìlico como, por exemplo, quitosana

Info

Publication number
BRPI0417991A
BRPI0417991A BRPI0417991-9A BRPI0417991A BRPI0417991A BR PI0417991 A BRPI0417991 A BR PI0417991A BR PI0417991 A BRPI0417991 A BR PI0417991A BR PI0417991 A BRPI0417991 A BR PI0417991A
Authority
BR
Brazil
Prior art keywords
sponge
structures
tissue
fabric
systems
Prior art date
Application number
BRPI0417991-9A
Other languages
English (en)
Inventor
Simon J Mccarthy
Kenton W Gregory
John W Morgan
Original Assignee
Hemcon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemcon Inc filed Critical Hemcon Inc
Priority claimed from PCT/US2004/043147 external-priority patent/WO2005062896A2/en
Publication of BRPI0417991A publication Critical patent/BRPI0417991A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

"MONTAGENS, SISTEMAS E MéTODOS DE CURATIVO DE TECIDO FORMADO POR ESTRUTURAS DE ESPONJA DE POLìMERO HIDROFìLICO COMO, POR EXEMPLO, QUITOSANA". Montagens de curativo de tecido são formadas de estruturas de esponja de polímero hidrofílico. As montagens de curativo de tecido podem ser usadas, por exemplo, para (i) estancar, selar ou estabilizar um local de lesão tecidual, trauma tecidual ou acesso tecidual; ou (ii) formar uma barreira antimicrobiana; ou (iii) formar uma atadura antiviral; ou (iv) intervir em um distúrbio de sangramento; ou (v) liberar um agente terapêutico; ou (vi) tratar uma superfície mucosa; ou (vii) combinações destes. As estruturas de curativo de tecido são tornadas complacentes, por exemplo, por (i) microfratura de uma porção substancial da estrutura da esponja por manipulação mecânica antes do uso, ou (ii) um padrão de alívio da superfície formado em uma porção substancial da estrutura da esponja antes do uso, ou (iii) um padrão de canais de entrada de fluido formado em uma porção substancial da estrutura da esponja antes do uso, ou (iv) a impregnação de um material da folha dentro da estrutura da esponja.
BRPI0417991-9A 2003-12-23 2004-12-22 montagens, sistemas e métodos de curativo de tecido formado por estruturas de esponja de polìmero hidrofìlico como, por exemplo, quitosana BRPI0417991A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/743,062 US7645341B2 (en) 2003-12-23 2003-12-23 Showerhead electrode assembly for plasma processing apparatuses
PCT/US2004/043147 WO2005062896A2 (en) 2003-12-23 2004-12-22 Tissue dressing assemblies, systems, and methods formed from hydrophilic polymer sponge structures such as chistosan

Publications (1)

Publication Number Publication Date
BRPI0417991A true BRPI0417991A (pt) 2007-04-27

Family

ID=34678564

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0417991-9A BRPI0417991A (pt) 2003-12-23 2004-12-22 montagens, sistemas e métodos de curativo de tecido formado por estruturas de esponja de polìmero hidrofìlico como, por exemplo, quitosana

Country Status (7)

Country Link
US (2) US7645341B2 (pt)
JP (2) JP4870575B2 (pt)
KR (1) KR101345904B1 (pt)
CN (1) CN1977068A (pt)
BR (1) BRPI0417991A (pt)
TW (1) TWI390624B (pt)
WO (1) WO2005065186A2 (pt)

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US7645341B2 (en) 2010-01-12
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