TWI357915B - Flexible high-temperature ultrabarrier - Google Patents
Flexible high-temperature ultrabarrier Download PDFInfo
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- TWI357915B TWI357915B TW093109106A TW93109106A TWI357915B TW I357915 B TWI357915 B TW I357915B TW 093109106 A TW093109106 A TW 093109106A TW 93109106 A TW93109106 A TW 93109106A TW I357915 B TWI357915 B TW I357915B
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- transition temperature
- glass transition
- polymer
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Description
1357915 玖、發明說明: 【發明所屬之技術領域】 本發明係關於阻礙物膜及電子器件。 【先前技術】 · 有機發光器件(OLED)在曝露於水蒸汽或氧時可遭受減 · 小之輸出或提前破損。已使用金屬及玻璃以封裝〇L£d哭件 並延長其壽命,但是金屬通常缺乏透明度而破璃缺乏可撓 - 性。正在進行密集之研究工作以找出用於OLed及其他電子 * 器件之替代封裝材料。一種展示出對水蒸汽及氧低滲透性 _ 之可撓性聚合阻礙物膜可能會特別有用,但儘管進行了密 集之工業研究但是至今僅僅取得了有限之成功。對有關於 可撓性阻礙物膜之參考包括:美國專利第5,44〇,446號 . (Shaw等人)、第 5,530,581 號(Cogan)、第 5,681,666號(Treger 等人)、第 5,686,360 號(Harvey,III 等人)、第 5,736,207 號 (Walther等人)、第 6,004,660號(Topolski 等人)、第 6,083,628 號(Yializis) ' 第 6,146,225 號(Sheats 等人)、第 6,214,422 號 _ (Yializis)、第 6,268,695 號(Affinito)、第 6,358,570 號 (Affinito) ' 第 6,413,645 號(Graff 等人)、第 6,492,026 號 •‘ (Graff等人)及第6,497,598號(Affinito);美國專利申請 ? 案號 US 2001/0015620 Al(Affinito)、US 2002/0125822 Al(Graff 等人)、US 2002/0150745 Al(Martin 等人)及 US 2002/0176993 Al(Graff等人)、歐洲專利申請案號EP 0 777 ' 280 A2(Motorola, Inc.)及 PCT 公開申請案號 WO 97/16053(Robert Bosch GmbH)。Walther等人之專利描述一 9247 丨.doc -6- 1357915 其最低報導氧透過率為 種用於塑料容器之阻礙物總成 0.375 cc/m2/天 /bar ° 【發明内容】 在一態樣中,本發明提供一種包含一可撓性可透射可見 光之基板的阻礙物總成(在下文中有時稱為"阻礙物膜”),該 基板之玻璃態轉化溫度("Tg")大於或等於經熱穩定之聚對 笨一曱酸乙二醇酯("HSPET”)的Tg,經具有大於或等於 HSPET之Tg的Tg之第一聚合物層加以外塗覆,且進一步經 被具有大於或等於HSPET之Tg的Tg之至少一第二聚合物層 分開之至少兩個可透射可見光之無機阻礙物層加以塗覆, 該阻礙物總成具有在23°C及90%RH下小於0.005 cc/m2/天之 氧透過率。 在另一態樣中,本發明提供一種用來製造阻礙物總成之 方法,其包括: a) 提供一可撓性可透射光之支撐體,其Tg大於或等於 HSPET之Tg; b) 在該支撐體頂上形成一具有大於或等於HSPET之Tg 的Tg之第一聚合物詹; c) 在該第一聚合物層頂上形成一可透射可見光之第— 無機阻礙物層; d) 在該第一無機阻礙物層上形成一第二聚合物層’其Tg 大於或等於HSPET之Tg;及 e) 在該第二聚合物層上形成一町透射可見光之第二無 機阻礙物層; 92471 .doc 1357915 其中該阻礙物總成具有在23。〇及9〇%rH下小於〇 〇〇5 cc/m2/ 天之氧透過率。 在另一態樣中,本發明提供一種顯示器或照明器件,其 包含一至少部分經阻礙物總成覆蓋之對濕氣或氧敏感之光 源或光閥,該阻礙物總成包含一具有大於或等於hSPet之 Tg的Tg之可撓性可透射可見光之基板,該基板經一具有大 於或等於HSPET之Tg的Tg之第一聚合物層加以外塗覆,且 進一步經至少兩個可透射可見光之無機阻礙物層加以外塗 覆,該等無機阻礙物層被具有大於或等於HspET2Tg&Tg 之至少一第二聚合物層分開。 本發明之此等及其他態樣將自下文之詳細說明而變得顯 而易見。然而,決不應將上述發明内容理解為對所申請之 標的物加以限制,其申請標的物僅由隨附申請專利範圍來 界定,其可在執行過程中加以修正。 【實施方式】 藉由對於本發明之阻礙物總成或器件中各層之位置使用 諸如”在…頂上'”在…上面在".最上"及其類似之方位 詞,吾人係指一個或多個層相對於水平支撐體層之相對位 置。吾人並非意指該等阻礙物總成或器件在其製造過程期 間或之後在空間上應具有任何特定方位。 藉由使用術語”外塗覆的"來描述一層相對於本發明之阻 礙物總成之基板或其他元件的位置’吾人係指該層位於基 板或其他元件頂上,但不必與該基板或該其他元件兩者; 之任-者相鄰接。藉由使用術語"被…分開”來描述一聚合 92471.doc 1357915 物層相對於兩個無機阻礙物層之位置,吾人係指該聚合物 層位於該等無機阻礙物層之間但不必與兩個無機阻礙物層 中之任一者相鄰接。 藉由使用術語"聚合物",吾人係指均聚物或共聚物,及 可(如藉由共擠壓或發生反應,包括諸如酯基轉移)以可混溶 之摻合物而形成的均聚物或共聚物。術語”共聚物π既包括 隨機共聚物又包括嵌段共聚物。術語"熟化之聚合物”既包 括經交聯之聚合物又包括未經交聯之聚合物。術語”經交聯 之’’聚合物係指其聚合鏈由共價化學鍵接合在一起(通常經 由交聯分子或基團)以形成網狀聚合物的聚合物。經交聯之 聚合物之特徵通常在於具有不可溶性,但在合適之溶劑存 在下可能係可膨脹的。 藉由使用術語”Tg”,吾人係指熟化之聚合物在以大塊而 非以薄膜形態進行評估時之玻璃態轉化溫度。在聚合物只 能以薄膜形態接受檢驗的情況下,通常可以合理之準確性 來估算大塊形態之Tg。大塊形態Tg值通常係藉由使用差示 掃描熱量測定(DSC)來評估熱流對比溫度之比率以測定聚 合物之分段流動性之開始及可認為聚合物自玻璃態向橡膠 態變化之轉折點(通常為二階轉化)而測定。大塊形態Tg值 亦可使用動態機械熱分析(DMTA)技術來估算,此技術量測 聚合物之模量變化作為溫度及振動頻率之函數。 藉由使用術語"可透射可見光之〃支撐體、層、總成或器 件,吾人意謂該支撐體、層、總成或器件具有沿法線軸量 測之在光譜的可見光部分上至少約20%之平均透射率,Tvis。 92471.doc 1357915 參考圖1 ’阻礙物總成整體顯示為1丨〇。總成1 1 〇包括由可 透射可見光之可撓性塑料膜製成之支撐體112,其Tg大於或 等於HSPET之Tg(Tg=約78。(;)。支撐體112經一 Tg大於或等 於HSPET之Tg的聚合物層114加以外塗覆,且進一步經兩層 或兩層以上之可透射可見光之無機阻礙物層(如層116、ι2〇 及124)加以外塗覆’該等無機阻礙物層被諸如層118及122 之聚合物層分開。總成Π 0亦較佳包括位於可透射可見光之 無機阻礙物層124最頂上的保護性聚合物上覆層126。 圖2顯示一層壓阻礙物總成13〇,其可藉由使用一可透射 可見光之黏著層1 32將兩片總成11 〇以面對面關係層壓在一 起而製成。 較佳之可撓性可透射光之支撐體112具有在55〇 nm至少 約70%之可見光透射率。該支撐體較佳藉由使用熱定形、 張力退火或其他技術而加以熱穩定,使得當支撐體不受束 缚時能在高達至少熱穩定溫度之溫度下阻攔其收縮的。若 該支撐體尚未經熱穩定,則其較佳具有大於聚甲基丙烯酸 甲酯("PMMA",Tg=l〇5t:)之Tg的Tg。該支撐體之丁g更隹係 至少約110°C ’仍更佳係至少約12〇。(:,且最佳係至少約128°C。 除HSPET之外,尤其較佳之支撐體還包括其他經熱穩定之 尚Tg聚酯、PMMA、苯乙烯/丙烯腈("SAN",Tg=110°C )、 笨乙烯/馬來酸酐("SMA",Tg=l 15°C )、聚對萘二甲酸乙二 酯(polyethylene naphthalate)("PEN”,Tg=約 120°C )、聚氧亞 甲基("POM",Tg=約125〇C )、聚對萘二甲酸乙烯酯(,,PVN_,, Tg=約 135°C)、聚醚醚酮(,’PEEK",Tg=i45°C)、聚芳醚酮 92471.doc •10· 1357915 ("ΡΑΕΚΠ,Tg=145°C )、高 Tg含氟聚合物(如 DYNEONTM ΗΤΕ 六氟丙稀、四氟乙烯、及乙稀之三聚物,Tg=約149°C)、聚 碳酸酯(nPC",Tg=約150°C )、聚α-曱基苯乙烯(Tg=約175°C )、 聚芳酯(nPARn,Tg=190°C )、聚礙(nPSul",Tg=約 195°C )、 聚苯氧化物("PPO”,Tg=約200eC)、聚醚醯亞胺(〃ΡΕΓ,Tg = 約 218°C )、聚芳基颯(nPAS",Tg=220°C )、聚醚颯(nPES”, Tg=約225。〇、聚醯胺醯亞胺(ΠΡΑΓ,Tg=約275。。)、聚醯亞 胺(Tg=約300°C )及聚鄰苯二甲醯胺(熱撓曲溫度120°C )。對 於材料成本較重要之應用而言,由HSPET及PEN製成之支 撐體尤其較佳。對於以阻礙物效能為首要之應用而言,可 使用由更昂貴之材料製成之支撐體。該支撐體較佳具有約 0.0 1 mm至約1 mm之厚度,更佳具有約0.05 mm至約0.25 mm 之厚度。 具有大於或等於HSPET之Tg的Tg之一第一聚合物層位於 該支撐體之頂上。可使用各種聚合物材料。形成適當高的 T g之聚合物之可揮發性單體為尤其較佳。該第一聚合物層 較佳具有大於PMMA之Tg的Tg,更佳具有至少約110°C之 Tg,仍更佳具有至少約150°C之Tg,且最佳具有至少約200°C 之Tg。可用於形成該第一層之尤其較佳單體包括:聚丙烯 酸胺基甲酸酯類(如CN-968,Tg=約84°C及CN-983,Tg=約 90°C,兩者皆可講自Sartomer Co.)、丙稀酸異冰片S旨(如 SR-5 06,其可購自 Sartomer Co_,Tg =約 88°C )、二季戊四醇 五丙稀酸酉旨(dipentaerythritol pentaacrylate)(如SR-399,其 可購自Sartomer Co.,Tg=約90°C )、與苯乙稀播合之環氧丙 92471.doc -11 - 1357915 稀酸S旨類(如CN-120S80 ’其可講自Sartomer Co.,Tg =約 95 C )、二-二經 f 基丙烧四丙烯酸 g旨(di-trimethylolpropane tetraacrylate)(如 SR-355,其可購自 Sartomer Co.,Tg=約 98°C )、 二乙二醇二丙烯酸酯類(如SR-230,其可購自Sartomer Co_ ’ Tg=約 l〇〇°C )、1,3-丁二醇二丙烯酸酯(如 SR-212,其 可購自Sartomer Co.,Tg=約101 °C )、五丙烯酸酯類(如 SR-9041,其可購自 Sartomer Co.,Tg=約 102°C )、季戊四醇 四丙烯酸醋類(如SR-295,其可購自Sartomer Co.,Tg=約 103°C )、季戊四醇三丙烯酸酯類(如SR-444,其可購自 Sartomer Co_,Tg=約103°C )、乙氧基化(3)三羥甲基丙烧三 丙烤酸S旨類(如SR-454,其可購自Sartomer Co.,Tg=約 103 °C)、乙氧基化(3)三羥甲基丙烷三丙浠酸酯類(如 SR-454HP,其可購自 Sartomer Co.,Tg=約 103〇C)、烧氧基 化三官能基丙烯酸酯類(如SR-9008,其可購自Sartomer Co·,Tg=約103°C )、二丙二醇二丙烯酸酯類(如SR-508,其 可購自Sartomer Co.,Tg=約104°C )、新戊二醇二丙烯酸酉旨 類(如 SR-247,其可購自 Sartomer Co.,Tg=約 107°C )、乙氧 基化(4)雙酚a二甲基丙烯酸酯(如CD_450 ’其可購自 Sartomer Co.,Tg=約108°C)、環己基二甲醇二丙稀酸醋類 (cyclohexane dimethanol diacrylate esters)(如 CD-406,其可 購自Sartomer Co.,Tg =約11(TC )、甲基丙烯酸異冰片酯(如 SR-423,其可購自 Sartomer Co.,Tg=約 110°C )、環狀二丙 烯酸酯類(如IRR-214,其可購自UCB Chemicals ’ Tg=約 208°C )及三(2-羥基乙基)異氰脲酸三丙烯酸酯(如SR-368, 92471.doc -12- 1357915 其可購自Sartomer Co.,Tg=約272°C )、前述曱基丙烯酸酯 類之丙烯酸酯類及前述丙烯酸酯類之甲基丙烯酸酯類。 該第一聚合物層可藉由以下步驟來形成:向基板上施加 層單體或暴聚體’且藉由(如)可輕射交聯之單體之閃蒸及 氣相沈積,繼之以使用(例如)電子束裝置、uv光源、放電 裝置或其他適當之器件進行交聯來使該層交聯以就地形成 聚合物。可藉由冷卻該支撐體來提高塗佈效率。亦可藉由 使用諸如滾塗法(如凹版滾塗法)或噴塗法(如靜電喷塗法) 之習知塗佈方法來將單體或寡聚物施加至基板上,接著如 上述般加以交聯。第一聚合物層亦可藉由施加一在溶劑中 含有券?h物或聚合物之層且乾燥如此所施加之層以移除溶 劑來形成。若提供在高溫下具有玻璃態之聚合層(其玻璃態 轉化溫度大於或等於HSPET之玻璃態轉化溫度),則亦可應 用電漿聚合作用。該第一聚合物層最佳係藉由閃蒸及氣相 沈積繼之以就地交聯而形成,例如,其描述於以下文獻中: 美國專利第 4,696,719號(Bischoff)、第 4,722,515 號(Ham)、 第 4,842,893號(Yializis 等人)、第 4,954,371 號(Yializis)、第 5,018,048 號(Shaw 等人)' 第 5,〇32,461 號(Shaw 等人)、第 5,097,800 號(Shaw 等人)、第 5,125,138 號(Shaw 等人)、第 5,440,446號(Shaw 等人)' 第 5,547,908 號(Furuzawa 等人)、 第 6,045,864號(Lyons等人)、第 6,231,93 9號(Shaw等人)及第 6,214,422 號(Yializis);公開 PCT 申請案號 W0 00/26973 (Delta V Technologies,Inc.) ; D. G. Shaw及 M. G. Langlois, "A New Vapor Deposition Process for Coating Paper and 92471.doc -13- 1357915
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High Speed Process for Vapor Depositing Acrylate Thin Films: An Update", Society of Vacuum Coaters 36th Annual Technical Conference Proceedings (1993) ; D. G. Shaw 及 M. G. Langlois, "Use of Vapor Deposited Acrylate Coatings to Improve the Barrier Properties of Metallized Film", Society of Vacuum Coaters 37th Annual Technical Conference Proceedings( 1 994) ; D. G. Shaw, M. Roehrig, M, G. Langlois 及 C· Sheehan,"Use of Evaporated Acrylate
Coatings to Smooth the Surface of Polyester and Polypropylene Film Substrates", RadTech(l996) ; J, Affinito, P. Martin, M. Gross, C. Coronado 及 E. Greenwell, "Vacuum deposited polymer/metal multilayer films for optical application", Thin Solid Films 270,43 - 48(1995);及 J.D.
Affinito,Μ· Ε· Gross,C. A. Coronado,G. L. Graff, E. N.
Greenwell 及 Ρ· M. Martin, "Polymer-Oxide Transparent
Barrier Layers", Society of Vacuum Coaters 39th Annual Technical Conference Proceedings (1996) ° 較佳藉由合適之預處理來增強每一聚合物層之光滑度及 連續性及其與下一層之黏著性。較佳之預處理方式係採用 了在適當之反應性或非反應性氣氛中放電(如電聚、輝光放 電、電暈放電、介電阻礙物放電或大氣壓放電);化學預處 理或火焰預處理。此等預處理有助於使下層之表面更易接 92471.doc -14- 1357915 ,内ik後所%加之聚合層之成形。尤其較佳為電聚預處理。 亦可在下層頂上使用一獨立之助黏著層以改良層間黏著, ㈣黏著層可具有不同於該高Tg聚合物層之組合物。該助 黏者層可為(例如)_獨立之聚合層或—含有金屬之層,諸如 金屬、金屬氧化物'金屬氮化物或金屬氧氮化物層。該助 點著層可具有幾⑽(如1或2 nm)至約5〇 nm之厚度,且若須 要可更厚。 ^ 該第一聚合物層所要之化學組合物及厚度將部分取決於 該支撐體之性質及表面構形。該厚度較佳足以提供光滑、 無缺陷之表面以可施加隨後之第一無機阻礙物層。例如, »玄弟水&物層可具有幾nm(如2或3 nm)至約5微来之厚 度,且若須要可更厚。 被一 Tg大於或等於HSPET之Tg之聚合物層分開之至少兩 個可透射可見光之無機阻礙物層位於該第一聚合物層頂 上。此等層可分別稱為"第一無機阻礙物層”、"第二無機阻 礙物層"及”第二聚合物層"。若須要可存在額外之無機阻礙 物層及聚合物層’包括不具有大於或等於HSPET之Tg的Tg 之聚合物層。然而較佳為每相鄰對之無機阻礙物層僅由具 有大於或等於HSPET之Tg的Tg之一聚合物層或多個聚合物 層分開’且更佳為僅由具有大於PMMA之Tg的Tg之一聚合 物層或多個聚合物層分開。 該等無機阻礙物層不必相同。可應用多種無機阻礙材 料。較佳之無機阻礙材料包括:金屬氧化物、金屬氮化物、 金屬碳化物、金屬氧氮化物、金屬氧硼化物、及其組合, 92471.doc -15- 1357915 例如諸如二氧化矽之矽氧化物、諸如氧化鋁之鋁氧化物、 諸如二氧化鈦之鈦氧化物、銦氧化物、錫氧化物、氧化銦 錫(ITO )、氧化組、氧化錯、氧化銳、碳化棚碳化鶴、 碳化矽、氮化鋁'氮化矽、氮化硼、氧氮化鋁、氧氮化矽、 氧氮化硼'氧硼化鍅、氧硼化鈦及其組合。氧化銦錫、二 氧化矽、氧化鋁及其組合為尤其較佳之無機阻礙材料。IT0 為一特定類之陶瓷材料之實例,其可藉由對每一元素組份 之相對比例作出適當選擇而變得導電。較佳使用在諸如濺 鍍法(如陰極或平面磁電管濺鍍)、蒸鍍法(如電阻或電子束 洛鍍)、化學氣相沈積法、電鍍法及其類似方法之膜鍍金屬 技術中之技術來形成該等無機阻礙物層。最佳使用如反應 性濺鍍之濺鍍法來形成該等無機阻礙物層。已觀察到,由 諸如濺鍍之高能量沈積技術所形成之無機層相較於由諸如 習知之化學氣相沈積方法之低能量技術而形成時具有增強 之阻礙特性。若無理論約束,則據信增強之特性係因為到 達該基板之冷凝物具有更大之動能,由於密集而導致更低 的空隙度。每一無機阻礙物層之光滑度及連續性及其與下 一層之黏著性可藉由預處理(如電漿預處理)加以提高,諸如 參考該第一聚合物層所描述之該等預處理。 該等無機阻礙物層不必具有相同厚度。每一無機阻礙物 層所要之化學組合物及厚度將部分取決於下一層之性質及 表面構形及該阻礙物總成所要之光學特性。該等無機阻礙 物層較佳足夠厚以使其為連續的’且足夠薄以確保該阻礙 物總成及含有該總成之物件將具有所要程度之可見光透射 9247I.doc -16- 1357915 率及可挽性。每-無機阻礙物層之實體厚度(與光學厚度相 反)較佳為約3至约15〇 nm,更佳為約4至約75 ·。 除阻礙功能之外’所有或部分之一個或多個可透射可見 光之無機阻礙物層可被用於諸如電極(若可適當地導電)或 觸敏表面之目㈣由使—層之部分留著暴露於外或藉由 將-層連接至料'f路跡線或其他電子元件可有助於達 成此。 或任何額外之無機阻礙物層分開之第 將第一 合物層不必相同,且不必全具有相同厚度。可施用各種第 二聚合物層材料。較佳之第二聚合物層材料包括上文關於 該第一聚合物層所提及之彼等材料。較佳藉由閃蒸法及氣 相^積法,繼之以如上文關於該第—聚合物層所提及般就 地交聯來施加該或該等第二聚合物層。較佳在形成一第二 聚合物層之前施以預處理(如電漿預處理),例如上文所述之 該等預處理。該或該等第二聚合物層所要之化學組合物及 厚度將部分取決於下一(多)層之性質及表面構形。該第二聚 。物層之厚度車父佳為足以提供光滑、無缺陷之表面以可施 加後續之無機阻礙物層。該或該等聚合物層的厚度通常可 小於5亥第一聚合物層。例如,每一第二聚合物層可具有約5 nm至約1 〇微米之厚度,且若須要可更厚。 該等阻礙物總成較佳具有一保護性聚合物外塗層。此外 塗層可稱為"第三聚合物層”。較佳將可揮發性甲基丙烯酸 醋單體用於第三聚合物層,尤其較佳為具有大於或等於 HSPET之Tg的Tg之可揮發性甲基丙烯酸酯單體(如上文關 92471.doc -17- 1357915 於第及第二聚合物層所提及之該等單體),且最 ,^ 吼丨玉马具有 ;MMA之Tg的Tg之可揮發性曱基丙烯酸酯單體。若項 要’可使用諸如滚塗法(如凹版滚塗法)或嗔塗法(如靜電喷 去)之^知塗佈方法,接著使用(例如)uv輻射進行六萨 施加該第三聚合物層。最佳係藉由如上文關於第―:二 聚^物層所述之閃蒸法、氣相沈積法及單體之交聯來形: 該第三聚合物層。較佳亦在形成第三聚合物層之前施用如 上所述之預處理(如t聚處理)。該第三聚合物層戶斤需化學組 合物及厚度將部分取決於τ —(多)層之性f及表面構形、該 阻礙物〜成可忐面臨之危害及可適用之器件的要求。該第 三聚合物層之厚度較佳足以提供—能保護該等下層免受普 通危害之光滑、無缺陷之表面。該第三聚合物層之厚度通 常可小於該第一聚合物層且大於該或該等第二聚合物層。 例如,該第三聚合物層可具有約5 nm至約10微米之厚度, 且若須要可更厚。 較佳之阻礙物總成具有足夠數目之無機阻礙物層,且該 基板及第一及第二聚合物層較佳具有足夠高之以以使該阻 礙物總成可透射可見光且其水蒸汽透過速率(water vapor transmission rate ’ WVTR)為在 38。(:及 100%相對濕度下小於 約〇.005 g/m2/天、更佳為在5(TC及100%相對濕度下小於約 0.005 g/m2/天、且最佳為在85t;&1〇〇%相對濕度下小於約 〇·005 g/m /天。透明度值(Tvis,藉由將400 nm與700 nm之間 的百分比透射率T加以平均來測定)較佳為至少約2〇%,更佳 為至少約60%。 92471 .doc -18- 1357915 圖3顯示一可用於本發明之阻礙物總成之輥至輥式 (roll-to-roll)製造的較佳裝置丨80。動力輥181a&181b來回移 動支撐腹板(supporting web)182通過裝置180。溫控旋轉鼓 183&及1831),及空轉輥184&、18413'184(:、1846及1846載 運腹板182穿過金屬濺鍍敷塗器185、電漿預處理器186、單 體蒸發器187及電子束(E-beam)交聯器件188。將液態單體 189自儲器190供應至蒸發器187。利用多次傳經裝置18〇將 連續層或多對層施加至腹板182。可將額外之敷塗器、預處 理器、洛發器及交聯器件添加至裝置18〇(如沿鼓183&及 183b之外圍)以能循序沈積幾對層。可將裝置18〇封入適當 之腔室(未示於圖3中)内,且保持於真空下或供以適當之惰 性氣氛來阻止氧、水蒸汽、灰塵及其他大氣污染物干擾各 種預處理、單體塗佈、交聯及濺鍍步驟。 可向本發明之阻礙物總成添加各種功能層或塗層以改變 或改良其物理或化學特性,尤其是在阻礙物膜表面處之物 理或化學特性。該等層或塗層可包括(例如广可透射可見光 之導電層或電極(如氧化銦錫之層或電極)、抗靜電塗層或 膜阻燃劏、UV穩定劑、耐磨劑或硬罩材料、光學塗層、 P方霧化材料、磁性或磁光塗層或膜、照相乳劑 '稜鏡形膜、 王心(holGgI*aphie)膜或影像、諸如壓敏黏著劑或熱溶黏著劑 之黏著劑、用於促進與㈣層之黏著性之底塗劑、及用於 當將該阻礙物總成用於黏著輥形式時之低黏著背部尺寸材 料。此等功能性組份可倂人該阻礙物總成之—個或多個最 外層中或可作為單獨之膜或塗層施加。 92471.doc -19- A在某些應用中,可能需要改變該阻礙物總成之外觀或性 % ’、例如藉由將經染色之膜層層壓至該阻礙物總成、將有 色塗層施加至該阻礙物總成、或在用以製造該阻礙物總成 之材料中的一個或多個中包括進染料或顏料。染料或顏料 可吸收光譜…個或多個選定區域,包括紅外、紫外或 可見光譜之部分。可將染料或顏料用以補充該阻礙物總成 之特性,特別是在該阻礙物總成透射某些頻帛而同時反射 其他頻率的情況下。 舉例而5,可用諸如彼等用於顯示產品識別、方位資訊、 廣告、警告、裝飾、或其他資訊之油墨或其他印刷戳記來 處理該阻礙物總成。可使用各種技術在該阻礙物總成上印 刷,例如(如)絲網印刷、喷墨印刷、熱轉移印刷、巴版印刷、 平版印刷、柔性版印刷(flexographlc printing)、點刻印刷' 雷射印刷等等,且可使用各種類型之油墨,包括一種及兩 種組份油墨、氧化性乾燥及11¥乾燥油墨、溶解型油墨、分 散型油墨、及100%油墨系統。 本發明之阻礙物總成可用於各種應用甲以抑制濕氣、氧 氣或其他氣體之透過。本發明之阻礙物總成尤其適用於封 裝〇LED、諸如液晶顯示器(LCD)之光閥及其他電子器件。 圖4中顯示本發明之代表性的經封裝之〇LED器件2〇〇。在圖 4中,器件200之前側或發光侧面朝下。器件2〇〇包括一本發 明之可透射可見光之阻礙物總成21〇,其具有用作陽極之外 ITO層(圖4中未顯示,但經定向以使其面朝上)。在阻礙物 總成210上發光結構220與外IT〇層相接觸。結構22〇含有複 92471.doc -20- 1357915 數個層(未個別顯示於圖4中),該等層在適當通電時協作以 向下發光透過阻礙物總成210。器件200亦包括導電陰極230 及金屬箔包裹層250。箔包裹層250藉由黏著劑240黏著至器 件220之背面、側面及一部分前面。黏著劑24〇中形成之開 口 260允許箔250之部分270發生變形以與陰極230相接觸。 箔250中之另一開口(圖4中未顯示)允許與由阻礙物總成2 i 〇 之外ITO層所形成之陽極相接觸。金屬箔25〇及阻礙物總成 2 1 0很大程度上防止了水蒸汽及氧到達發光結構22〇。 現將參考以下的非限制性實例對本發明加以描述,其中 除非另作說明’否則所有部分及百分比均以重量計。 實例1 用丙烯酸酯及氧化銦錫("IT0")層之堆棧來覆蓋聚對萘二 曱酸乙二酯("PEN")支撐膜,該等層以七層交替之丙烯酸酯 /ITO/丙烯酸酯/ITO/丙烯酸酯/IT〇/丙烯酸酯組態加以排 列。該等個別層係如下而形成: (層1)將一卷91公尺長之〇_127 mm厚X 5 0 8 mm寬之 KALADEX™ 1020 PEN膜(其可購自 Dup〇nt_Teijin Films,
Tg=120°C)裝載入輥至輥式真空處理腔室。將該腔室抽氣至 8X 10 6托之壓力。使用鈦陽極在6〇〇 w運作之氮電漿來處理 該膜,使用9.1公尺/分鐘之腹板速度且保持該膜之背面冷至 0C之塗佈用鼓相接觸。緊隨電漿處理之後且當該膜仍與鼓 相接觸時,用藉由使97。/。IRR-214環狀二丙烯酸酯(其可購 自 UCB Chemicals,Tg=208〇C)與 3% EBECRYL™ 170丙烯酸 酯化之酸性助黏著劑(其可購自UCB Chemicals)組合而製備 92471.doc -21 - 之丙稀IS“匕合物來塗佈該經電漿處理之膜表面。該丙稀 酸酯混合物在塗佈前經真空去氣,且經由一在60 kHz頻率 下運作之超音波霧化器(可購自s〇n〇tek c叫)以3 〇如/論 之肌速抽吸至一保持在275<^之加熱汽化腔室。所得單體蒸 a抓冷凝至經電漿處理之膜表面上’且使用在8 kV及2 5毫 安培(milliamp)下運作之單燈絲進行電子束交聯,以形成 426 nm厚的丙烯酸酯層。 (層2)在腔至内倒轉腹板方向,且使用一 h2〇3/1〇%
Sn02靶(可購自 Umicore Indium Products)將一 ITO無機氧化 物層濺鍍沈積在一 2 0公尺長之塗佈有丙烯酸酯的腹板表面 上。使用1500瓦之功率、在3毫托之壓力下含有134sccm氬 氣及3.0 sccm氧氣之氣體混合物、及〇 55公尺/分鐘之腹板 速度來濺鍍ITO,以在層!丙烯酸酯頂上沈積一 48 nm厚的 IT0 層。 (層3)再次倒轉腹板方向。在相同之2〇公尺腹板長度上使 用與層1相同之一般條件來塗佈第二丙烯酸酯層且使其交 聯,但以下條件例外:在3000 w下使用鈦陽極及層2氬氣/ 氧氣混合物執行電漿處理,且單體流速為丨」ml/min。在層 2頂上提供了一 104 nm厚的丙烯酸酯層。 (層4)再次倒轉腹板方向。使用與層2相同之條件,在層3 頂上沈積一 48 nm厚的IT0層。 (層5)再次倒轉腹板方向。使用與層3相同之條件,在層4 頂上沈積一 104 nm厚的丙烯酸酯層。 (層6)再次倒轉腹板方向。使用與層2相同之條件,在層5 92471.doc -22- 頂上沈積一 48 nm厚的ITO層。 (層7)再次倒轉腹板方向。使用與層3相同之條件,在層6 頂上沈積一 1 04 nm厚的丙稀酸酯層。 所得七層堆棧(未算基板)展示出在30°入射角所量測之平 均光譜透射率Tvis=50%(藉由將400 nm與700 nm之間的百分 比透射率T加以平均來測定),及水蒸汽透過速率(在85°C及 100%RH下根據ASTM F-129來測定)小於MOCON PERMATRAN-W™ 3/3 1 WVTR 測試系統(可購自 MOCON Inc)之下限偵測速率0.005 g/m2/天。該膜亦展示出其氧氣透 過速率(根據ASTM D-3985測定且用該膜面對該測試氣體 之任一側面來評估)在38°C及90%RH下評估時小於MOCON OXTRANTM 2/20氧氣透過速率測試系統(可購自MOCON Inc)之下限偵測速率0.005 cc/m2/天,且在50°C及90%RH下 評估時小於0.030 cc/m2/天之平均值。 將實例1之阻礙物總成浸入液氮中、斷裂成兩半且使用掃 描電子顯微鏡在橫截面上進行檢驗。圖5顯示所得顯微照 片。支撐體312,第一聚合物層314,可透射可見光之無機 阻礙物層316、320及324,第二聚合物層318及322以及第三 聚合物層3 2 6可清楚地見於圖5中。 實例2 用與實例1相同之方式製備七層堆棧,但是使用了 SR-3 68D經混合之丙烯酸酯混合物(可購自Sartomer Co.,為 SR-351三羥曱基丙烷三丙烯酸酯與SR-3 68三(2-羥基乙基) 異氰脲酸三丙烯酸酯之50 : 50混合物),且在形成層3、5及 92471.doc -23 - 1357915 7時未使用電毁處理。基於SR 351之62〇CTg與SR 368之 272 CTg的昇術平均值,sr_368d之Tg估計值為167。〇。 所得七層堆棧展示出在30。入射角所量測之平均光譜透 射率TviS=68%,且其WVTR(在5(rc& 1〇〇%RH下測定)小於 WVTR測試系統之下限偵測速率〇 〇〇5呂化2/天。 實例3
用與實例1相同之方式製備七層堆棧,但使用了 MELINEX™ 617聚對苯二曱酸乙二醇酯(”pET")膜基板(可 購自DuPont-Teijin Films, Tg=7〇°C)及不同的丙烯酸酯。使 用三丙二醇二丙烯酸酯("TRPGDA”,其可購自UCB
Chemicals,Tg=62°C)作為層1丙烯酸酯。將含有97% TRPGDA及3%經EBECRYL 170丙烯酸酯化之酸性助黏著劑 且具有估計值Tg = 62°C之混合物用以形成層3、5及7。 所得之七層堆棧展示出在30。入射角所量測之平均光譜 透射率 Tvis=71°/。,及 0.036 g/m2/ 天之 WVTR(在 5(TC 及 100%RH下測定)。 實例4 經熱穩定之PET基板 用與實例1相同之方式製備七層堆棧,但使用了 MELINEX™ ST725經熱穩定之PET膜基板(可購自 DuPont-Teijin Films, Tg = 78°C),為層 1、3、5及 7 中之每一 者使用了不含經EBECRYL 170丙烯酸酯化之酸性助黏著劑 之100% IRR-214丙烯酸酯,且在沈積層3、5及7時在2000 W 使用矽陰極及層2氬/氧氣體混合物執行電漿處理。 9247t.doc •24- 1357915 所得之七層堆棧展示出在3〇°入射角所量測之平均光譜 透射率 Tvis=77%,及 〇_〇〇6 g/m2/天之 WVTR(在 6(TC 及 100%RH下測定)。 實例5 基板Tg對WVTR之影響 用SiAlO無機氧化物及商用阻礙聚合物(SARAN™ F-278,可購自Dow Chemical Company)以無機氧化物/阻礙 聚合物/無機氧化物之組態排列的三層堆棧來覆蓋具有不 同玻璃態轉化溫度之若干基板。作為預備步驟,將聚曱基 戊烯、聚丙晞、PET及聚醚礙膜基板之區段以端對端接合在 一起以製成一單一輥。個別之無機氧化物及阻礙物層係如 下形成於此等基板上。 (層1)將經接合之卷裝載入一輥至輥式濺鍍塗佈器。將沈 積腔室抽氣至2x1 (T6托之壓力。藉由使用2 kW及600 V、在1 宅托之壓力下含有51 seem氬氣及30 seem氧氣之氣體混合 物、及0.43公尺/分鐘之腹板速度來反應性地濺鍍一 si_Al (95/5)乾(可購自 Academy . Precision Materials)而在基板膜 頂上沈積一 60nm厚的SiAlO無機氧化物層。 (層2)自真空塗佈器移除經氧化物塗佈之腹板,使用裝配 有以6.1 m/min之腹板速度運作之15〇}1壓花輥的M〇del CAG-150微凹版塗佈器(可購自Yasui_Seiki co_)將Saran F278聚合物於四氫呋喃與甲笨之65/35體積/體積之混合物 中的10%溶液連續塗佈在層i上。在8〇。〇之溫度下於該塗佈 器之乾燦用部分蒸發溶劑。 92471.doc -25 - 1357915 (層3)將經聚合物塗佈之腹板裝載入真空塗佈器中。使用 與層1相同之條件,在層2頂上沈積一第二S i A10無機氧化物 層。 接著,在3 8°C及1 〇〇%HR下測定經塗佈之阻礙物總成之每 一區段的WVTR。結果列於下表1中。 表1 基板_Tg, °C WVTR @ 38。C/100% RH, g/m2 /天 PMP (聚曱基戊烯)1 29 4.76 PP (聚丙烯)2 -30至+20 2.35 PET3 70 0.281 PES (聚醚礙)4_225_0.0825 1 TPX膜,可購自 Westlake Plastics。 2 可購自 Copol International。 3 可購自 Teijin Corp.。 4 可購自 Westlake Plastics。 如表1中之PET及PES基板所示,WVTR值趨向於隨基板 Tg增加而減小。PMP及PP基板具肴低於WVTR測試溫度之 Tg值,且因此它們的WVTR值可在一定程度上受到不同於 高Tg基板之影響。 實例6 聚合物層Tg對WVTR之影響 將施用具有不同玻璃態轉化溫度之聚合物層而組成之聚 合物/無機氧化物/聚合物/無機氧化物之四層堆棧系列覆蓋 在 HSPE 100 0.1 mm PET 膜(可購自 Teijin Films,Tg=70°C) 1357915 上。該無機氧化物為1TO且該等聚合物自表2所列之成份來 形成,每一成份的量以在調配物中重里計之份數顯示. 表2 —^--- 調配物 成份 1 2 3 __4 5 SR-238 1 17 - 5 CD-4061 - 17 ·· SR-5062 - - 13 B-CEA3 3 3 2 - 10 LC242 4 - - 20 EBECRYL™ 629 5 - - - 85 1-曱氧基-2-丙Sf· 75.6 75.6 75.6 75.6 360 曱基乙基酮 113.4 113.4 113.4 113.4 540 IRGACURE1846 1 1 1 1 5 1,6-己二醇二丙稀酸酯(可購自 Sartomer Co·,Tg=43°C )。 92471.doc -27- 1 環己基二甲醇二丙烯酸酯(可購自Sartomer Co.,Tg=ll〇°C)。 2 丙烯酸異冰片酯(可購自Sartomer Co·,Tg=88°C)。 3 丙烯酸/3-緩基乙酯(可購自UCB Chemicals Corp.)。 4 液晶聚合物(PALIOCOLOR™ LC 242,可購自BASF Corp.,Tg未知)。 5 用30%三羥曱基丙基三丙烯酸酯及5%甲基丙烯酸羥基乙 酯稀釋之環氧酚醛清漆二丙烯酸酯(可購自UCB Chemicals Corp.)。 6 卜羥基環己基苯基酮光引發劑(可購自Ciba Specialty Chemicals)。 (層1)使用Model cAG-150微凹版塗佈器及以6.1 m/min之 線速度之150R壓花將表2中所示之五種調配物塗佈在PET 膜基板之連續區段上。用一以100%功率運作之6 kW Fusion Η燈泡(可購自Fusion UV Systems)來熟化塗層。 (層2)將經塗佈之膜基板裝載入一濺鍍塗佈器且柚氣至 2M0·6托之基礎壓力下。使用300 W及420 V及一 90/10之氧化 錫/氧化銦乾(可購自Arc onium Specialty Alloys)、在4毫托之 壓力下含有30 seem氬氣及8 seem氧氣之氣體混合物、及 0.127公尺/分鐘之腹板速度在層1調配物頂上沈積一 40 nm 厚的ITO無機氧化物層。 (層3及層4)分別使用與層1及層2相同之條件,在層2頂上 塗佈一第二聚合物層以形成層3,且在層3頂上沈積一第二 ITO層以形成層4。 接著在50°C及100% RH下測定該經塗佈之阻礙物總成之 每一區段之WVTR。結果列於下表3中: 聚合物居 T2,°C 表3 WVTR @ 50°C /100% RH, g/m2 /天 調配物I1 43 1.08 調配物22 110 0.63 調配物33 93.5 1.47 調配物44 - 0.1 調配物55 122 0.09 1,6 -己二醇二丙烯酸雖與丙稀酸心殘基乙酯之聚合物。 92471.doc -28- 2環己基二甲醇二丙烯酸酯與丙烯酸/3-羧基乙酯之聚合 物。 3丙烯酸異冰片酯與丙烯酸/3-羧基乙酯之聚合物。 4 PALIOCOLOR™ LC 242之聚合物。 5環氧酚醛清漆二丙烯酸酯與丙烯酸/3-羧基乙酯之聚合 物。 如表3中之調配物1、2及5所示,WVTR值趨向於隨聚合 物Tg增加而減小。自大量的多官能單體或寡聚體製成調配 物1、2及5之聚合物。對調配物3及4觀察到一定程度不同之 表現。調配物3含有75%之單官能單體且因此以不與調配物 1、2及5相同之方式進行交聯。調配物4係基於自UV熟化液 晶二丙烯酸酯單體獲得之液晶聚合物,且因此可以與調配 物1、2及5不同之方式表現。 實例7 層壓之阻礙物構造 使用光學黏著劑將在PET基板上具有六層堆棧之兩個阻 礙物總成以面對面之方式黏著在一起來組合成經層壓之阻 礙物構造。完成之層壓阻礙物總成具有PET7聚合物1/SiAlO/ 聚合物2/SiA10/聚合物2/SiA10/光學黏著劑/SiAlO/聚合物 2/SiA10/聚合物2/SiA10/聚合物1/PET之組態。如下述來形 成該等阻礙物總成及將其層壓在一起: (層1)使用Model CAG-150微凹版塗佈器及以6.1 m/min 之1 10R壓花將調配物6(如下表4中所示)塗佈上HSPE 50 0.05 mm PET膜(可購自 Teijin,Tg = 70°C)。使用以 100%功率 92471.doc -29- 1357915 運行之Fusion F600 Η燈泡來熟化該塗層以提供一被標識為 "聚合物1"之層。使用光差掃描熱量測定(photodifferential scanning calorimetry)(nphoto DSC")測定出聚合物 1 具有 122.8°C 之 Tg。 (層2)使用實例5中對於SiA10無機氧化物層所述之條 件,在層1頂上沈積一 60 nm厚的SiΑΙΟ無機氧化物層。 (層3)使用對於層1所述之條件但是以4.6 m/min之塗佈速 度,用調配物7(顯示於下表4中)來塗佈層2並加以熟化以提 供一被標識為”聚合物2"之層。聚合物2具有90°C之Tg。 (層4、層5及層6)分別使用與層2及層3相同之條件,在層3 頂上沈積第二SiAlO層以形成層4,在層4頂上塗佈第二層聚 合物2以形成層5,且在層5頂上沈積第三層SiAlO以形成層 6,藉此提供具有PET7聚合物1/SiAlO/聚合物2/SiA10/聚合 物2/SiA10組態之阻礙物總成。 表4 調配物 成份 1 2 EBECRYL™ 629 145.5 - /3-CEA 37.5 - IRGACURE 184 9.03 - UVI-6974 1 - 2.25 EHPE31502 - 42.75 MEK 972 405 CYRACURE™ UVI-6974六氟銻酸三芳基鎳(可購自Ciba 92471.doc -30- 1357915
Specialty Chemicals)。 2聚酯EHPE3150固態脂環環氧樹脂(可購自Daicel
Chemical Industries,Tg=90〇C)。 所得經塗佈之阻礙物總成卷被分裂成兩卷,且使用3Mtm 8141 透光型層壓黏著劑(optically clear laminating adhesive)(可購自3M Co.)及輥至輥式層壓機將其以面對面 之方式層壓至一起。在3 8°C及l〇〇%RH下測定非層壓之阻礙 物總成之WVTR^,且在38°C/l〇〇%RH 及 50°C/100%RH 下測 定經層壓之阻礙物總成之WVTR值。所得結果列於下表5 中: 表5 WVTR, g/m2/天@ 1〇〇% rh及
_阻礙物總成組態_38〇C或50°C 〇-〇41(38°C) <0.005(3 8°C) <〇.〇〇5(5〇°C )
PET/聚合物1/SiAlO/聚合物 2/SiA10/聚合物 2/SiA10 PET/聚合物1/SiAlO/聚合物 2/SiAlO/聚合物2/SiA10/光學黏 著劑/SiAlO/聚合物2/SiA10/聚 合物2/SiA10/聚合物1/PET PET/聚合物1/SiAlO/聚合物 2/SiA10/聚合物2/SiA10/光學黏 著劑/SiAlO/聚合物2/SiA10/聚 合物2/SiA10/聚合物1/PET 如圖5中之結果所示,面對面層壓步驟使WVTR減小。在 38°C及50°C之量測溫度下,WVTR均保持在低於MOCON PERMATRAN-W 3/31 WVTR測試系統之下限读測速率 9247l.doc -31 - 1357915 0.005 g/m2/天。 實例8 OLED器件 將實例1之阻礙物總成之樣品再次裝載入輥-對-輥式真 空處理腔室中用來沈積一頂表面IT〇導電層,其形成如下·· (層8)使用與層6相同之條件來濺鑛沈積ΙΤ〇,但使用了 0.19么尺/分鐘之腹板速度以在層7丙烯酸|旨頂上沈積一 us nm 厚的IT0層。 使用X-ACT0TM刀(可購自Hunt Corporation)將所得頂表 面導電阻礙物切成22x22 mm之方塊。以丙酮沖洗且在空氣 中乾燥後,在氧電漿中使用MICR〇_RIETM Series 8〇電漿系 統(可購自Technics,Inc.)清洗該等方塊並將其暴露在5〇瓦 力率及200毫托氧氧壓力下4分鐘。將baytrqntm p 4083 聚噻吩(可購自Bayer C〇rporation)i1%固體水溶液以25〇〇 rpm旋塗在經清洗之方塊上%秒。藉由首先將—η必丄匪 載玻片置放在真空夹盤上、施加真空以將該載玻片固持在 適當之位置、添加一滴甲醇至該載玻片頂部、纟甲醇頂上 置放,清洗之方塊且使方塊之邊緣對準載玻片之邊緣,來 將該等方塊固持在旋塗器真空夾盤上適當之位置。甲醇填 充了載玻片與方塊之間的空@,且在旋塗作業過程中將方 在適當之位b料經塗佈之方塊在—犯之熱板 上於氮氣氛下乾燥。 將經塗佈之方塊轉移 W6托。下列諸層藉由— 至一鐘形罩蒸發腔室中且排空至約 含有19.5平方毫米之開口的蔭遮罩 9247l.doc -32- 1357915 而循序熱蒸汽沈積在該等經塗佈之方塊上。 (層1)摻雜有7%四氟四氰基喹啉二曱烷("FTcnq”,可構 自曰本東京 Tokyo Kasei Kogyo Co.)之 4,4',4”-三(N-(3-甲基 苯基)-N-苯基胺基)三苯胺("MTDATA”,可購自Η· w Sands Corp.)的 2245A厚層。 (層 2)N,N-一(萘-1-基)-N,N'-二苯基聯苯胺("qj-NPB11,可 以 OPD7534購自 H. W. Sands Corp.)的 300A厚層。 (層3)換雜有l%(i〇_(2 -苯幷。塞嗤基)_2,3,6,7 -四氯- l,l,7 四甲基1-1H,5H,11H-[1]苯幷吡喃並[6,7,8-ij]喹嗪-11-酮 ("C545T"染料,可購自Eastman Kodak Co.)之三(8-經基邊 啉)鋁(”A1Q3,,,可購自 H. W_ Sands Corp.)的 300A厚層。 (層4)A1Q3之200A厚層。 將經蒸汽塗佈之方塊轉移至含有一薄膜蒸發腔室 ("Edwards 500",可購自BOC Edwards)之手套箱中以用於陰 極熱沈積。藉由一具有一 1 cm2圓形開口之金屬蔭遮罩(將其 配置成使得該陰極沈積在該等方塊之近似中心),在約丨〇-7 托下於該等方塊上循序沈積一 1000 A厚之辑層(使用可購自 Alfa-Aesar Co:之乾)及一 2000A厚之銀層(使用可構自 Alfa-Aesar Co.之靶)。當藉由使ITO陽極與鱷魚夹接觸及 Ca/Ag陰極與純金導線接觸而將約4至9伏DC傳經所完成之 OLED器件時,有綠光發出。 如在2002年12月19日申請之同在申請中之美國專利申請 案序列號第10/324,585號中所述般’以銅箔封裝該等器件。 3MTM Thermo-Bond Film 845 EG熱層壓用膜(黏著厚度 92471.doc -33- 1357915 為0.06 mm)之一大約50x100 mm片在其釋放襯墊側上標記 有25 mm方塊之2x8柵格。使用手持型紙穿孔機在每一 25 mm 方塊之中心切開一 6 mm圓孔。將經打孔之熱層壓用膜置放 在一片約125x75 mm之0.05 mm厚的Cu箱(可購自 McMaster-Carr Supply Co_)上,使其黏著側接觸該箔,接著 將其置放在76x229x〇_64 mm之鋁板(可講自Q_panel Company)上,使其釋放襯墊側接觸鋁板。藉由以約i〇2»c下 運作之TDE Systems Model HL-406 2-輥熱層壓機(可購自 Kmart Corp.)將所得總成接連饋入三次,以將該黏著膜層壓 至Cu箔上並使該箔變形進入該黏著層中之6 mm孔中。將經 層壓之Cu箔自鋁載板移除’用剪刀切成25 mm之方塊,且 送入含有發射綠光之OLED器件之手套箱中。用剪刀將經層 壓之Cu箔之25 mm方塊修整成約20 mm方塊,以使黏著層中 之6 mm孔保留在方塊之近似中心處。接著,移除該釋放襯 墊且將經暴露之黏著層置放在相抵於該等22平方毫米之 OLED器件中之一者的陰極側上,使穿過該黏著層之6爪爪 孔近似位於該OLED器件之陰極中心上,且經層壓之cu箔方 塊關於該OLED基板旋轉45。使得經層壓之cu箔方塊之角與 該OLED基板之邊緣對直且沿其近似中點延伸出去。將所得 之總成用鑷子固持在一起,且置放在! 〇〇〇c之熱板上約2〇 秒以使經層壓之Cu箔黏著至該〇LED基板上。接著將Cu箔 之角折至該OLED器件之前面上,且在手套箱之惰性氮氣氛 中而Λ)夺其層壓至此,此係藉由使所得總成傳經在約1 〇 〇。〇下 運作之BESTECH·™ M〇del 2962 2輥熱層壓機(可購自R〇se 9247I.doc -34· 1357915
Art Industnes)。在冷卻時,藉由接觸該器件之-角上的猫 暴露之!丁◦部分來形成經封裝之〇LED的陽極連帛,且拜由 接觸Μ來形成陰極連接1施加電料,自該器件發出 綠光 ° 熟悉此項技術者將不難對本發明作出各種修改及改變, 而不脫離本發明。本發明不應傷限於本文為說明目的所陳 述的内容。 【圖式簡單說明】 圖1為所揭示之阻礙物總成之示意性截面圖; 圖2為所揭示之層壓阻礙物總成之示意性截面圖; 圖3為用來執行所揭示方法之裝置的示意圖; 圖4為所揭示之〇LED器件之示意性截面圖;及 圖5為所揭示之阻礙物總成的顯微照片; 圖式中以各種數字表示之相似參考符號代表相似元件。 圖式中之該等元件未按比例。 【圖式代表符號說明】 110 112 114 116 、 120 、 124 118 、 122 132 130 181a 、 i81b 阻礙物總成 支撐體 聚合物層 無機阻礙物層 聚合物層 黏著層 層壓阻礙物總成 動力報 92471.doc -35 - 1357915 180 182 183a 184a 184d 185 186 187 188 189 190 200 210 220 230 240 250 260 270 312 314 3 16、 裝置 支撐腹板 ' 183b 旋轉鼓 、184b、184c、 空轉輥 、184e 金屬濺鍍敷塗器 電漿預處理器 單體蒸發器 電子束交聯器件 液態單體 儲器 OLED器件 阻礙物總成 發光結構 導電陰極 黏著劑 金屬箔包裹層 開口 箔250之部分 支撐體 第一聚合物層 3 20、3 24 無機阻礙物層 92471.doc •36- 1357915 318 ' 322 326 126 第二聚合物層 第三聚合物層 保護性聚合物上覆層 92471.doc -37-
Claims (1)
- 第093109106號專利申請案 中文申請專月) 拾、申請專利範圍: 1. 一種包含一具有大於或等於經熱穩定之聚對苯二甲酸乙 二酯之玻璃態轉化溫度的玻璃態轉化溫度之可撓性可透 射可見光之基板的阻礙物總成,該基板經一具有大於或 等於經熱穩定之聚對苯二甲酸乙二g旨之玻璃態轉化溫度 的玻璃態轉化溫度之第一聚合物層加以外塗覆,且進一 步經至少兩個可透射可見光之無機阻礙物層加以外塗 覆’該等無機阻礙物層被具有大於或等於經熱穩定之聚 對苯二甲酸乙二酯之玻璃態轉化溫度的玻璃態轉化溫度 之至少一第二聚合物層分開,該阻礙物總成具有一在23 °C及90°/。相對溼度下小於0.005 cc/m2/天之氧透過率。 2_如申請專利範圍第1項之阻礙物總成,其中該基板具有大 於或等於聚曱基丙烯酸甲酯之玻璃態轉化溫度的玻璃態 轉化溫度。 3. 如申請專利範圍第1項之阻礙物總成,其中該基板具有至 少約120°C之玻璃態轉化溫度。 4. 如申請專利範圍第1項之阻礙物總成,其中該基板包含經 熱穩定之聚對苯二甲酸乙二酯或聚對萘二曱酸乙二酯。 5 ·如申吻專利範圍第1項之阻礙物總成,其中該基板包含聚 氧亞曱基、聚乙烯萘、聚醚醚酮、含氟聚合物、聚碳酸 酯、聚(X-甲基苯乙烯、聚砜、聚苯氧化物、聚醚醯亞胺、. 聚醚砜、聚醯胺醯亞胺、聚醯亞胺或聚鄰苯二甲醯胺。. 6.如申請專利範圍第1項之阻礙物總成,其中該第一或第二 聚合物層具有大於或等於聚曱基丙烯酸甲酯之玻璃態轉 92471-100H25.doc 7. 7. * ' 8. 9. 10. . Π. 12. 13. ' 14. " 15. 16. _____—------ 92471- 化溫度的玻璃態轉化溫度。 如申請專利範圍第丨項之阻礙物總成,其中該第—及第二 聚合物層具有至少約15〇〇C之玻璃態轉化溫度。 如申請專利範圍第1項之阻礙物總成,其中該第一或第二 ΛΚ合物層包含環己基二甲醇二丙烯酸酯、曱基丙烯酸異 冰片酯、環狀二丙烯酸酯或三(2_羥基乙基)異氰脲酸三丙 烯酸酯之聚合物。 如申請專利範圍第1項之阻礙物總成,其中該阻礙物總成 中之第一、第二及任何其他聚合物層具有大於或等於聚 甲基丙稀酸甲醋之玻璃態轉化溫度的玻璃態轉化溫度。 如申請專利範圍第1項之阻礙物總成,其中至少一個無機 阻礙物層包含金屬氧化物。 如申請專利範圍第1項之阻礙物總成,其中至少一個無機 阻礙物層包含氧化銦錫。 如申請專利範圍第1項之阻礙物總成,其中至少一個無機 阻礙物層包含二氧化矽或氧化鋁。 如申請專利範圍第1項之阻礙物總成,其中至少一個無機 陴礙物層包含矽與鋁之混合氧化物。 如申请專利範圍第1項之阻礙物總成,其具有在50。〇及 1〇〇%相對濕度下小於0.005 g/m2/天之水蒸汽透過速率。 如申4專利範圍第1項之阻礙物總成,其具有在85它及 100%相對濕度下小於0.005 g/m2/天之水蒸汽透過速率。 如申請專利範圍第1項之阻礙物總成,其具有至少約60% 之透明度值。 1001125.doc 1357915 17. 如申请專利範圍第1項之阻礙物總成’其中該總成之至少 部分經一導電層或電極加以外塗覆。 18. 如申請專利範圍第17項之阻礙物總成,其中該導電層或 電極可透射可見光。 19. 如申請專利範圍第丨項之阻礙物總成,其中該阻礙物總成 中之所有聚合物層係經交聯者。 20. 如申請專利範圍第1項之阻礙物總成,其具有至少三個可 透射可見光之無機阻礙物層,該等無機阻礙物層被具有 至少約150。(:之玻璃態轉化溫度的第二聚合物層分開。 21. —種用於製造一阻礙物總成之方法,其包含: a) 提供一具有大於或等於經熱穩定之聚對苯二甲酸乙二 醋之玻璃態轉化溫度的玻璃態轉化溫度之可撓性可 透射可見光的支撐體; b) 在該支撐體頂上形成一具有大於或等於經熱穩定之聚 對苯二甲酸乙二酯之玻璃態轉化溫度的玻璃態轉化 溫度之第一聚合物層; c) 在該第一聚合物層頂上形成一可透射可見光之第一無 機阻礙物層; d) 在該第一無機阻礙物層頂上形成一具有大於或等於經 熱穩定之聚對苯二曱酸乙二酯之玻璃態轉化溫度的 玻璃態轉化溫度之第二聚合物層;及 e) 在3亥弟一聚合物層頂上形成一可透射可見光之第一無 機阻礙物層, 其中該阻礙物總成具有在23。(:及90%相對溼度下小於〇〇〇5 92471-1001125.doc 1357915 22. 23. 24. 25. 26. 27. 28. cc/m2/天之氧透過率。 如申請專利範圍第21項之方法,其中該第一或第二聚合 物層具有大於聚曱基丙烯酸甲酯之玻璃態轉化溫度的玻 璃態轉化溫度》 如申請專利範圍第21項之方法,其中該第一及第二聚合 物層具有至少約150°C之玻璃態轉化溫度。 如申請專利範圍第21項之方法,其中該基板包含經熱穩 定之聚對苯二甲酸乙二酯、聚對萘二曱酸乙二酯、聚氧 亞甲基、聚乙烯萘、聚醚醚酮、含氟聚合物、聚碳酸酯、 聚α-曱基苯乙烯、聚颯、聚苯氧化物、聚醚醯亞胺、聚醚 硬、聚醯胺醯亞胺、聚醯亞胺或聚鄰苯二甲醯胺。 如申請專利範圍第21項之方法,其申該第一或第二聚合 物層包含環己基二甲醇二丙烯酸酯、曱基丙稀酸異冰片 酉曰、環狀二丙烯酸酯或三(2_羥基乙基)異氰脲酸三丙烯酸 酉旨之聚合物。 如申請專利範圍第21項之方法,其中至少一個無機阻礙 物層包含金屬氧化物。 如申凊專利範圍第21項之方法,其中至少一個無機阻礙 物層包含氧化銦錫、二氧化矽、氧化鋁或矽與鋁之混合 氧化物。 如申請專利範圍第21項之方法,其令施加了足夠數目之 無機阻礙物層且其中該基板及第一及第二聚合物層具有 足夠高之玻璃態轉化溫度使得該阻礙物總成可透射可見光 且具有在50它及1〇〇%相對濕度下小於〇 〇〇5 g/m2/天之水 92471-1001125.doc -4- 1357915 29. 30. 31. 32. 33. 34. 35. 蒸汽透過速率。 如申請專利範圍第21項之方法,其中施加了足夠數目之 無機阻礙物層且其中該基板及第一及第二聚合物層具有 足夠高之玻璃態轉化溫度使得該阻礙物總成能透射可見光 且具有在85t及100%相對濕度下小於〇 〇〇5 g/m2/天之水 蒸汽透過速率。 一種包含一至少部分經如申請專利範圍第丨項之阻礙物 總成所覆蓋之對濕氣或氧敏感的光源或光閥之顯示器。 如申请專利範圍第3〇項之顯示器,其中該第一或第二聚 合物層具有大於聚曱基丙烯酸甲酯之玻璃態轉化溫度的 玻璃態轉化溫度。 如申請專利範圍第30項之顯示器,其中該第一及第二聚 合物層具有至少約15〇。(:之玻璃態轉化溫度。 如申請專利範圍第30項之顯示器’其中該基板包含經熱 穩定之聚對苯二甲酸乙二酯、聚對萘二甲酸乙二酯、聚 氧亞曱基、聚乙豨萘、聚鱗醚酮、含氟聚合物、聚碳酸 醋、聚α-曱基苯乙烯、聚颯、聚苯氧化物、聚醚醯亞胺、 聚醚礙、聚醯胺醯亞胺、聚醯亞胺或聚鄰苯二甲醯胺。 如申請專利範圍第30項之顯示器,其中該第一或第二聚 合物層包含環己基二曱醇二丙烯酸酯、曱基丙烯酸異冰 片醋、環狀二丙烯酸酯或三(2-羥基乙基)異氰脲酸三丙烯 酸酯之聚合物。 如申請專利範圍第30項之顯示器,其中至少一個無機阻 礙物層包含金屬氧化物。 92471-1001125.doc 1357915 » · 36.如申請專利範圍第3〇項之顯示器,其中至少一個無機阻 礙物層包含氧化銦錫、二氧化矽、氧化鋁或矽與鋁之混 合氧化物。 3 7.如申請專利範圍第30項之顯示器,其具有足夠數目之無 機阻礙物層且包含一具有足夠高玻璃態轉化溫度的基板 及第一及第二聚合物層使得該阻礙物總成可透射可見 光、具有在50°C及100%相對濕度下小於0.005 g/m2/天之 水蒸汽透過速率且具有在23 °C及90%相對溼度下小於 0.005 cc/m2/天之氧透過率。 38.如申請專利範圍第30項之顯示器,其具有足夠數目之無 機阻礙物層且包含具有足夠高玻璃態轉化溫度的基板及 第一及第二聚合物層使得該阻礙物總成可透射可見光且 具有在85°C及100%相對濕度下小於0.005 g/m2/天之水蒸 汽透過速率。 3 9.如申請專利範圍第30項之顯示器,其中該阻礙物總成具 有至少三個可透射可見光之無機阻礙物層,該等被具有 至少約15(TC之玻璃態轉化溫度的聚合物層分開。 40. 如申請專利範圍第30項之顯示器,其進一步包含一在該 阻礙物總成與該光源或光閥之間的導電層。 41. 如申請專利範圍第30項之顯示器,其中該光源或光閥包 含一有機發光器件。 42·如申請專利範圍第3〇項之顯示器,其中該光源或光閥包 含一液晶顯示器。 43. —種包含一至少部分經如申請專利範圍第1項之阻礙物 1 ----_ 一 ____ _ __ __ _ _ _ 一 _ _ * —' ——------------------— 92471-1001125.doc . 6 . 1357915 總成所覆蓋之對濕氣或氧敏感的光源或光閥之照明器 件。 92471-1001125.doc
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- 2003-04-02 US US10/405,284 patent/US7018713B2/en not_active Expired - Lifetime
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2004
- 2004-03-31 WO PCT/US2004/009956 patent/WO2004089620A2/en active Application Filing
- 2004-03-31 JP JP2006509551A patent/JP5117717B2/ja not_active Expired - Fee Related
- 2004-03-31 EP EP04749603.9A patent/EP1613468B1/en not_active Expired - Lifetime
- 2004-03-31 KR KR1020057018768A patent/KR101119702B1/ko active IP Right Grant
- 2004-03-31 EP EP10182971.1A patent/EP2277698B1/en not_active Expired - Lifetime
- 2004-03-31 EP EP16175849.5A patent/EP3121003A1/en not_active Withdrawn
- 2004-03-31 CN CN2004800092597A patent/CN1771127B/zh not_active Expired - Lifetime
- 2004-04-01 MY MYPI20041201A patent/MY135796A/en unknown
- 2004-04-01 TW TW093109106A patent/TWI357915B/zh not_active IP Right Cessation
-
2005
- 2005-11-14 US US11/272,929 patent/US7486019B2/en not_active Expired - Lifetime
-
2009
- 2009-01-30 US US12/363,457 patent/US7980910B2/en not_active Expired - Lifetime
- 2009-11-13 US US12/617,818 patent/US7940004B2/en not_active Expired - Lifetime
-
2010
- 2010-01-13 US US12/686,801 patent/US20100119840A1/en not_active Abandoned
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2011
- 2011-02-28 JP JP2011042243A patent/JP5702188B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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TW200508296A (en) | 2005-03-01 |
US20100073936A1 (en) | 2010-03-25 |
WO2004089620A3 (en) | 2005-02-17 |
US20090142476A1 (en) | 2009-06-04 |
CN1771127A (zh) | 2006-05-10 |
EP3121003A1 (en) | 2017-01-25 |
JP5702188B2 (ja) | 2015-04-15 |
US7940004B2 (en) | 2011-05-10 |
KR101119702B1 (ko) | 2012-03-19 |
EP1613468B1 (en) | 2019-10-09 |
KR20060010737A (ko) | 2006-02-02 |
US20060062937A1 (en) | 2006-03-23 |
EP2277698A1 (en) | 2011-01-26 |
US20040195967A1 (en) | 2004-10-07 |
US20100119840A1 (en) | 2010-05-13 |
US7018713B2 (en) | 2006-03-28 |
JP2011131601A (ja) | 2011-07-07 |
EP1613468A2 (en) | 2006-01-11 |
US7980910B2 (en) | 2011-07-19 |
MY135796A (en) | 2008-06-30 |
CN1771127B (zh) | 2010-12-15 |
WO2004089620A2 (en) | 2004-10-21 |
JP5117717B2 (ja) | 2013-01-16 |
EP2277698B1 (en) | 2020-07-15 |
US7486019B2 (en) | 2009-02-03 |
JP2006525152A (ja) | 2006-11-09 |
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