JP6437463B2 - 混合金属‐シリコン‐酸化物バリア - Google Patents
混合金属‐シリコン‐酸化物バリア Download PDFInfo
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- JP6437463B2 JP6437463B2 JP2015559305A JP2015559305A JP6437463B2 JP 6437463 B2 JP6437463 B2 JP 6437463B2 JP 2015559305 A JP2015559305 A JP 2015559305A JP 2015559305 A JP2015559305 A JP 2015559305A JP 6437463 B2 JP6437463 B2 JP 6437463B2
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- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 73
- 230000004888 barrier function Effects 0.000 title claims description 51
- 239000010408 film Substances 0.000 claims description 140
- 239000000758 substrate Substances 0.000 claims description 102
- 239000002243 precursor Substances 0.000 claims description 86
- 229910052760 oxygen Inorganic materials 0.000 claims description 74
- 239000001301 oxygen Substances 0.000 claims description 74
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- -1 oxygen radicals Chemical class 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 230000005540 biological transmission Effects 0.000 claims description 16
- 239000003642 reactive oxygen metabolite Substances 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229920005570 flexible polymer Polymers 0.000 claims description 5
- 239000008240 homogeneous mixture Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910004013 NO 2 Inorganic materials 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 230000009477 glass transition Effects 0.000 claims description 2
- WMAAIGILTZEOHE-UHFFFAOYSA-N n-[bis(ethylamino)-[tris(ethylamino)silyl]silyl]ethanamine Chemical class CCN[Si](NCC)(NCC)[Si](NCC)(NCC)NCC WMAAIGILTZEOHE-UHFFFAOYSA-N 0.000 claims description 2
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical group CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 description 51
- 238000000151 deposition Methods 0.000 description 35
- 229910004298 SiO 2 Inorganic materials 0.000 description 30
- 230000008021 deposition Effects 0.000 description 29
- 210000002381 plasma Anatomy 0.000 description 26
- 229920000139 polyethylene terephthalate Polymers 0.000 description 23
- 239000005020 polyethylene terephthalate Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 229910044991 metal oxide Inorganic materials 0.000 description 15
- 150000004706 metal oxides Chemical class 0.000 description 15
- 150000003376 silicon Chemical class 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910010413 TiO 2 Inorganic materials 0.000 description 14
- 241000894007 species Species 0.000 description 13
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000012686 silicon precursor Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- HEHINIICWNIGNO-UHFFFAOYSA-N oxosilicon;titanium Chemical compound [Ti].[Si]=O HEHINIICWNIGNO-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 5
- 238000010998 test method Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000003814 drug Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000036962 time dependent Effects 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000003869 coulometry Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241001278264 Fernandoa adenophylla Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000009459 flexible packaging Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- TYCVNFYGWNZRAM-UHFFFAOYSA-N tritert-butyl(hydroxy)silane Chemical compound CC(C)(C)[Si](O)(C(C)(C)C)C(C)(C)C TYCVNFYGWNZRAM-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Description
非ヒドロキシル化シリコン含有前駆体 + MxOz含有表面 → 化学吸着シリコン種 (反応A)
化学吸着シリコン種 + 酸素ラジカル → SiyOz含有表面 (反応B)
SiyOz含有表面 + 金属含有前駆体 → 化学吸着金属種 (反応C)
化学吸着金属種 + 酸素ラジカル →MxOz含有表面 (反応D)
Claims (31)
- 基材(210)上にバリアフィルム(200)を形成する方法(600)であって、該方法は、
500オングストローム以下の厚さを有する混合金属‐シリコン‐酸化物フィルムが前記基材上に形成されるまで、以下のステップのシーケンス、即ち、
(a)前記基材に支持される表面を非ヒドロキシル化シリコン含有前駆体又は金属含有前駆体のいずれか一方に曝露することにより、前記表面上に第1の前駆体を化学吸着させるステップ(608)と、
(b)前記ステップ(a)の後、前記表面に活性酸素種を供給するステップ(610)と、
(c)前記表面を前記非ヒドロキシル化シリコン含有前駆体又は前記金属含有前駆体の他方に曝露することにより、前記表面上に第2の前駆体を化学吸着させるステップ(614)と、
(d)前記ステップ(c)の後、前記表面に活性酸素種を供給するステップ(616)と、
を繰り返すステップ(620)を含むことを特徴とする、バリアフィルムの形成方法。 - 前記ステップ(a)及び(b)は、前記ステップ(c)及びステップ(d)を実行する前に、2〜5回繰り返される、請求項1に記載の方法。
- 前記表面に活性酸素種を供給するステップは、乾燥した酸素含有化合物をクラッキングすることにより活性酸素種を形成するステップを含む、請求項1に記載の方法。
- 前記乾燥した酸素含有化合物は、乾燥空気、酸素(O2)、一酸化炭素(CO)、二酸化炭素(CO2)、一酸化窒素(NO)、二酸化窒素(NO2)、又はN2とCO2の混合物を1つ以上含む、請求項3に記載の方法。
- 前記酸素含有化合物をクラッキングするステップは、活性酸素種を形成するために前記乾燥したガス状の酸素含有化合物を熱分解するステップを含む、請求項3に記載の方法。
- 前記乾燥した酸素含有化合物をクラッキングするステップは、酸素ラジカルを形成するために前記乾燥した酸素含有化合物のプラズマ励起を含む、請求項3に記載の方法。
- 前記非ヒドロキシル化シリコン含有前駆体は、トリス(ジメチルアミノ)シラン、テトラ(ジメチルアミノ)シラン、ビス(tertiary‐ブチルアミノ)シラン、トリシリルアミン、シランジアミン,N,N,N’,N’テトラエチル、又はヘキサキス(エチルアミノ)ジシランを1つ以上含む、請求項1に記載の方法。
- 前記金属含有前駆体は、トリメチルアルミニウム(TMA)、四塩化チタン(TiCl4)、又はジエチル亜鉛(Zn(C2H5)2)を1つ以上含む、請求項1に記載の方法。
- 200℃以下の温度で前記シーケンスを繰り返すことをさらに含む、請求項1に記載の方法。
- 前記混合金属‐シリコン‐酸化物フィルムは、本質的にAlxSiyOzフィルム、TixSiyOzフィルム、及びZnxSiyOzフィルムからなる群から選択されるフィルムから成る、請求項1に記載の方法。
- 前記混合金属‐シリコン‐酸化物フィルムは、1.8以下の屈折率を有する、請求項1に記載の方法。
- 前記混合金属‐シリコン‐酸化物フィルムは、1.5〜1.8の屈折率を有する、請求項11に記載の方法。
- 前記混合金属‐シリコン‐酸化物フィルムは、3×10-1g/m2/日以下の水蒸気透過速度を有する、請求項1に記載の方法。
- 第1のゾーン内に前記非ヒドロキシル化シリコン含有前駆体を導入するステップと、
前記第1のゾーンから間隔をあけた第2のゾーン内に前記金属含有前駆体を導入するステップと、
前記第1のゾーンと第2のゾーンとの間に位置する分離ゾーン内に、乾燥した酸素含有化合物を導入して前記分離ゾーンと前記第1及び第2のゾーンとの間に正の圧力差を生じさせるステップと、
前記基材と前記第1及び第2のゾーンとをこれらの間で相対移動させるステップと、
前記活性酸素種を発生するために前記分離ゾーン内の前記基材の近傍で前記乾燥した酸素含有化合物をクラッキングするステップとを、
さらに含む、請求項1に記載の方法。 - 前記基材を前記バリアフィルムでカプセル化するステップをさらに含む、請求項1に記載の方法。
- 前記基材は、剛性である、請求項1に記載の方法。
- 前記基材は、OLEDを含む、請求項1に記載の方法。
- 前記基材は、照明パネルを含む、請求項1に記載の方法。
- 基材(210)上に成膜される防湿層(200)であって、500オングストローム未満の厚さの金属‐シリコン‐酸化物混合物の薄膜から成り、1.8以下の屈折率を有し、前記防湿層は、3×10-1g/m2/日以下の水蒸気透過速度を有する防湿層。
- 前記金属‐シリコン‐酸化物は、非ヒドロキシル化シリコン含有前駆体及び金属含有前駆体から形成される、請求項19に記載の防湿層。
- 基材上に成膜される防湿層であって、該防湿層は、非ヒドロキシル化シリコン含有前駆体、金属含有前駆体、及び酸素含有化合物から形成された活性酸素種から形成される、金属-シリコン-酸化物混合物の薄膜から成り、前記防湿層は、3×10-1g/m2/日以下の水蒸気透過速度を有する、防湿層。
- 前記防湿層は、1.5〜1.8の屈折率を有する、請求項19又は請求項20に記載の防湿層。
- 前記金属-シリコン- 酸化物混合物は、均質な混合物である、請求項21に記載の防湿層。
- 前記金属‐シリコン‐酸化物フィルムは、本質的にAlxSiyOzフィルム、TixSiyOzフィルム、及びZnxSiyOzフィルムからなる群から選択されるフィルムから成る、請求項19又は請求項20に記載の防湿層。
- 前記基材は、200℃以下のガラス遷移温度を有する可撓性ポリマーである、請求項19又は請求項20に記載の防湿層。
- 前記基材は、1.8以下の屈折率を有する可撓性ポリマーフィルムである、請求項19又は請求項20に記載の防湿層。
- 前記防湿層は、前記基材をカプセル化する、請求項19又は請求項20に記載の防湿層。
- 前記基材は剛性である、請求項19又は請求項20に記載の防湿層。
- 前記基材はOLEDディスプレイを含む、請求項19又は請求項20に記載の防湿層。
- 前記基材は照明パネルを含む、請求項19又は請求項20に記載の防湿層。
- 前記薄膜が、炭素汚染物質を実質的に含まない、請求項21に記載の防湿層。
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