TW435007B - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit device Download PDFInfo
- Publication number
- TW435007B TW435007B TW087104587A TW87104587A TW435007B TW 435007 B TW435007 B TW 435007B TW 087104587 A TW087104587 A TW 087104587A TW 87104587 A TW87104587 A TW 87104587A TW 435007 B TW435007 B TW 435007B
- Authority
- TW
- Taiwan
- Prior art keywords
- mos transistors
- current
- gate
- circuit
- tunnel
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Description
435007
聯之一對NMOS及PM0S電晶體所成;輪出端子連接 於上述一對電晶體之連接點; 構成上述傳送電路之M0S電晶體之閘絕緣膜之厚度係比 構成上述一對电體之Μ Ο S電晶體之閘絕緣膜薄β ” 10· —種半導體積體電路,其特徵在於: 具有:傳送電路、傳達向外部輸出之信號:電平變換電 路’將來自該傳送電路之輸出予以放大;輸出電路,以 該電平變換電路之輸出作為閘輸入,源極-汲極通路係事 聯之一對NMOS及PMOS電晶體所成;輸出端子,連接 於上述一對電晶體之連接點; 構成上述傳送電路之MOS電晶體之驅動電壓係比構成上 述一對電晶體之MOS電晶體之驅動電壓低。 11· 一種半導體積體電路,其特徵在於: 具有:輸入端子,輸入向裝置内部之信號;輸入保護電 路,被輸入來自該輸入端子之信號;電平變換電路,將 被輸入來自該輸入保護電路之信號之信號的振幅電平予 以縮小;傳送電路,被輸入來自該電平變換電路之信 號,將信號傳送至裝置内部; 構成上述傳送電路之MO S電晶體之閘絕緣膜之厚度係比 構成元件之絕緣膜薄,該元件係構成上述輸入保護電 路。 12. —種半導體積體電路,其特徵在於: 具有:輸入端子、將信號輸入至裝置内部;輸入保護電 路,被輸入來自該輸入端子之信號;電平變換電路’將 -3 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 435007 A8 B8 C8 D8 々、申請專利範圍 被輸入來自該輸入保護電路之信號之信號的振幅電平予 以縮小:傳送電路,被輸入來自該電平變換電路之信 號,將信號傳送至裝置内部; 構成上述傳送電路之MOS電晶體之驅動電壓比驅動元件 之驅動電壓小,該元件係構成上述輸入保護電路。 -4- 本紙張尺度適用中國國家揉準(CNS) Α4規格(210 X 297公釐)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8512496 | 1996-04-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW435007B true TW435007B (en) | 2001-05-16 |
Family
ID=13849901
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087104587A TW435007B (en) | 1996-04-08 | 1997-04-08 | Semiconductor integrated circuit device |
TW086104430A TW382164B (en) | 1996-04-08 | 1997-04-08 | Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086104430A TW382164B (en) | 1996-04-08 | 1997-04-08 | Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic |
Country Status (6)
Country | Link |
---|---|
US (8) | US6307236B1 (zh) |
EP (1) | EP0951072B1 (zh) |
JP (2) | JP5232816B2 (zh) |
DE (1) | DE69739692D1 (zh) |
TW (2) | TW435007B (zh) |
WO (1) | WO1997038444A1 (zh) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
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TW435007B (en) * | 1996-04-08 | 2001-05-16 | Hitachi Ltd | Semiconductor integrated circuit device |
JP3185730B2 (ja) | 1997-11-14 | 2001-07-11 | 日本電気株式会社 | 相補型mos半導体装置 |
JP3796034B2 (ja) | 1997-12-26 | 2006-07-12 | 株式会社ルネサステクノロジ | レベル変換回路および半導体集積回路装置 |
JP3853513B2 (ja) | 1998-04-09 | 2006-12-06 | エルピーダメモリ株式会社 | ダイナミック型ram |
JP4030198B2 (ja) | 1998-08-11 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP2000216342A (ja) * | 1999-01-21 | 2000-08-04 | Mitsubishi Electric Corp | 集積回路チップおよびその未使用パッドの処理方法 |
US6743679B2 (en) * | 1999-03-03 | 2004-06-01 | Koninklijke Philips Electronics N.V. | Integrated circuit devices with high and low voltage components and processes for manufacturing these devices |
US7635618B2 (en) * | 1999-03-03 | 2009-12-22 | Nxp B.V. | Integrated circuit devices with high and low voltage components and processes for manufacturing these devices |
JP2000267136A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | 液晶表示装置 |
JP2001267431A (ja) * | 2000-03-17 | 2001-09-28 | Nec Corp | 半導体集積回路装置及びその製造方法 |
JP2002064150A (ja) * | 2000-06-05 | 2002-02-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2011228725A (ja) * | 2000-06-05 | 2011-11-10 | Renesas Electronics Corp | 半導体装置 |
JP4366858B2 (ja) * | 2000-09-18 | 2009-11-18 | ソニー株式会社 | Mosトランジスタ回路 |
US6642543B1 (en) * | 2000-09-26 | 2003-11-04 | The Board Of Trustees Of The Leland Stanford Junior University | Thin and thick gate oxide transistors on a functional block of a CMOS circuit residing within the core of an IC chip |
TW546615B (en) * | 2000-11-22 | 2003-08-11 | Hitachi Ltd | Display device having an improved voltage level converter circuit |
KR100370164B1 (ko) * | 2000-12-20 | 2003-01-30 | 주식회사 하이닉스반도체 | 비트라인의 누설전류 보상이 가능한 풀업회로 |
JP5240792B2 (ja) * | 2001-06-05 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4353393B2 (ja) * | 2001-06-05 | 2009-10-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
JP4492837B2 (ja) * | 2001-07-31 | 2010-06-30 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2003059273A (ja) | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体記憶装置 |
JP2003132683A (ja) | 2001-10-23 | 2003-05-09 | Hitachi Ltd | 半導体装置 |
JP2003188351A (ja) * | 2001-12-17 | 2003-07-04 | Hitachi Ltd | 半導体集積回路 |
US6599778B2 (en) * | 2001-12-19 | 2003-07-29 | International Business Machines Corporation | Chip and wafer integration process using vertical connections |
US7064984B2 (en) * | 2002-01-16 | 2006-06-20 | Micron Technology, Inc. | Circuit and method for reducing leakage current in a row driver circuit in a flash memory during a standby mode of operation |
JP2003282823A (ja) * | 2002-03-26 | 2003-10-03 | Toshiba Corp | 半導体集積回路 |
US20030218218A1 (en) * | 2002-05-21 | 2003-11-27 | Samir Chaudhry | SRAM cell with reduced standby leakage current and method for forming the same |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
KR100482370B1 (ko) * | 2002-09-27 | 2005-04-13 | 삼성전자주식회사 | 게이트 산화막의 두께가 다른 반도체장치 |
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DE10255636B4 (de) * | 2002-11-28 | 2010-12-02 | Infineon Technologies Ag | Schaltkreis-Anordnung |
EP1434264A3 (en) * | 2002-12-27 | 2017-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method using the transfer technique |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
JP4176593B2 (ja) * | 2003-09-08 | 2008-11-05 | 株式会社東芝 | 半導体装置及びその設計方法 |
DE10348018B4 (de) * | 2003-09-24 | 2012-09-20 | Infineon Technologies Ag | CMOS-Schaltkreis-Anordnung |
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- 1997-04-08 WO PCT/JP1997/001191 patent/WO1997038444A1/ja active Application Filing
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US20140252495A1 (en) | 2014-09-11 |
US7427791B2 (en) | 2008-09-23 |
US20110012180A1 (en) | 2011-01-20 |
US20080297220A1 (en) | 2008-12-04 |
EP0951072A4 (en) | 2000-09-13 |
DE69739692D1 (de) | 2010-01-21 |
US6500715B2 (en) | 2002-12-31 |
JP5325317B2 (ja) | 2013-10-23 |
US6307236B1 (en) | 2001-10-23 |
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