PL3216842T3 - Sposób wytwarzania kropki kwantowej z perowskitu i kropka kwantowa z perowskitu otrzymana za pomocą tego sposobu - Google Patents

Sposób wytwarzania kropki kwantowej z perowskitu i kropka kwantowa z perowskitu otrzymana za pomocą tego sposobu

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Publication number
PL3216842T3
PL3216842T3 PL15856222T PL15856222T PL3216842T3 PL 3216842 T3 PL3216842 T3 PL 3216842T3 PL 15856222 T PL15856222 T PL 15856222T PL 15856222 T PL15856222 T PL 15856222T PL 3216842 T3 PL3216842 T3 PL 3216842T3
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Poland
Prior art keywords
quantum dot
perovskite quantum
preparation
perovskite
dot obtained
Prior art date
Application number
PL15856222T
Other languages
English (en)
Inventor
Haizheng Zhong
Feng Zhang
Xiangang WU
Hailong Huang
Yuwei NIU
Original Assignee
Shenzhen Tcl New Technology Co., Ltd
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Publication date
Application filed by Shenzhen Tcl New Technology Co., Ltd filed Critical Shenzhen Tcl New Technology Co., Ltd
Publication of PL3216842T3 publication Critical patent/PL3216842T3/pl

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D17/00—Separation of liquids, not provided for elsewhere, e.g. by thermal diffusion
    • B01D17/02—Separation of non-miscible liquids
    • B01D17/04—Breaking emulsions
    • B01D17/047—Breaking emulsions with separation aids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • B01J13/06—Making microcapsules or microballoons by phase separation
    • B01J13/08—Simple coacervation, i.e. addition of highly hydrophilic material
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
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    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
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    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
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    • C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7492—Arsenides; Nitrides; Phosphides
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    • C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
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    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
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    • C09K11/87—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing platina group metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K50/81—Anodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18—Metal complexes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Luminescent Compositions (AREA)
PL15856222T 2014-11-04 2015-10-22 Sposób wytwarzania kropki kwantowej z perowskitu i kropka kwantowa z perowskitu otrzymana za pomocą tego sposobu PL3216842T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201410612348.6A CN104388089B (zh) 2014-11-04 2014-11-04 一种杂化钙钛矿量子点材料的制备方法
EP15856222.3A EP3216842B1 (en) 2014-11-04 2015-10-22 Preparation method for perovskite quantum dot and perovskite quantum dot obtained by the method
PCT/CN2015/092497 WO2016070713A1 (zh) 2014-11-04 2015-10-22 钙钛矿量子点材料以及其制备方法

Publications (1)

Publication Number Publication Date
PL3216842T3 true PL3216842T3 (pl) 2020-09-21

Family

ID=52606053

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15856222T PL3216842T3 (pl) 2014-11-04 2015-10-22 Sposób wytwarzania kropki kwantowej z perowskitu i kropka kwantowa z perowskitu otrzymana za pomocą tego sposobu

Country Status (5)

Country Link
US (2) US10633584B2 (pl)
EP (1) EP3216842B1 (pl)
CN (1) CN104388089B (pl)
PL (1) PL3216842T3 (pl)
WO (1) WO2016070713A1 (pl)

Families Citing this family (127)

* Cited by examiner, † Cited by third party
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CN104388089B (zh) * 2014-11-04 2017-06-06 深圳Tcl新技术有限公司 一种杂化钙钛矿量子点材料的制备方法
KR101724210B1 (ko) 2014-11-06 2017-04-07 포항공과대학교 산학협력단 페로브스카이트 발광소자용 발광층 및 이의 제조방법과 이를 이용한 페로브스카이트 발광소자
WO2016072810A1 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
WO2016072806A2 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자
KR101643052B1 (ko) 2014-11-06 2016-07-27 포항공과대학교 산학협력단 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자
NL2015885A (en) * 2014-12-23 2016-09-22 Asml Netherlands Bv Lithographic patterning process and resists to use therein.
CN104861958B (zh) * 2015-05-14 2017-02-15 北京理工大学 一种钙钛矿/聚合物复合发光材料及其制备方法
EP3098870A1 (en) * 2015-05-29 2016-11-30 Consejo Superior De Investigaciones Cientificas Nanostructured perovskite
CN105185918A (zh) * 2015-08-27 2015-12-23 Tcl集团股份有限公司 量子点发光层、其制备方法及qled
CN108028288B (zh) * 2015-09-28 2020-03-17 京瓷株式会社 光电转换装置
CN106816520A (zh) * 2015-11-30 2017-06-09 隆达电子股份有限公司 波长转换材料及其应用
CN105331362B (zh) * 2015-12-07 2017-08-04 南京理工大学 一种室温大产率无机卤素钙钛矿荧光量子点的制备方法
CN105349140B (zh) * 2015-12-08 2017-06-16 重庆大学 基于CsPbBr3‑xIx‑ZnS钙钛矿量子点异质结的制备方法及其产品
CN105489777B (zh) * 2015-12-22 2017-10-20 成都新柯力化工科技有限公司 一种微胶囊结构的钙钛光伏材料及其制备方法
CN105895803B (zh) * 2016-01-26 2018-06-01 南京工业大学 一种钙钛矿光电器件、制备方法及一种钙钛矿材料
CN105733574B (zh) * 2016-01-31 2018-06-12 南京理工大学 一种低温溶液法制备钙钛矿量子点的方法
US20170217785A1 (en) * 2016-02-02 2017-08-03 The Regents Of The University Of California Inorganic halide perovskite nanowires and methods of fabrication thereof
CN105679966B (zh) * 2016-02-06 2018-04-06 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的晶体管的制备方法
CN105609652B (zh) * 2016-02-06 2018-04-20 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的发光二极管的制备方法
CN105679944B (zh) * 2016-02-06 2018-11-06 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的太阳能电池及其制备方法
KR102592690B1 (ko) 2016-03-10 2023-10-23 삼성전자주식회사 나노결정 및 그 제조방법
CN105870338B (zh) * 2016-04-05 2018-08-07 南昌航空大学 一种含铜的有机无机钙钛矿量子点太阳能电池的制备方法
CN105789465B (zh) * 2016-04-05 2018-11-13 南昌航空大学 一种含锑的有机无机钙钛矿量子点电致发光二极管的制备方法
CN105895817B (zh) * 2016-04-11 2017-09-01 郑州大学 以Ni(Mg)O作为空穴提供层的钙钛矿绿光LED及制备方法
US10711952B2 (en) * 2016-05-13 2020-07-14 King Abdullah University Of Science And Technology Multifunctional light, data device, or combination and systems
CN106024999B (zh) * 2016-05-27 2019-05-07 南京理工大学 一种提高钙钛矿led发光效率的量子点表面纯化法
TWI575287B (zh) * 2016-06-22 2017-03-21 友達光電股份有限公司 顯示面板及顯示模組
WO2017221834A1 (ja) * 2016-06-24 2017-12-28 住友化学株式会社 組成物
CN106087242B (zh) * 2016-07-29 2020-12-04 华东理工大学 一种钙钛矿量子点复合纤维膜、制备方法及其用于荧光检测的应用
CN108026445B (zh) * 2016-08-11 2022-06-21 凡泰姆股份公司 发光晶体和其制造
CN107722962B (zh) * 2016-08-12 2019-09-17 京东方科技集团股份有限公司 发光材料及其制备方法、纳米片膜材、背光源和显示装置
JP6817451B2 (ja) * 2016-09-13 2021-01-20 迎輝科技股▲分▼有限公司Ｅｆｕｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． 量子構造発光モジュール
US11898744B2 (en) 2016-09-13 2024-02-13 Sic Technology Co. Ltd Quantum structure thin film and quantum structure light-emitting module including the same
CN106433619B (zh) * 2016-09-27 2017-06-30 华中科技大学 一种Bi基钙钛矿量子点材料的制备方法
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