KR920018965A - 반도체 재료 및 그 제작 방법과 박막 트랜지스터 - Google Patents

반도체 재료 및 그 제작 방법과 박막 트랜지스터 Download PDF

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KR920018965A
KR920018965A KR1019920004487A KR920004487A KR920018965A KR 920018965 A KR920018965 A KR 920018965A KR 1019920004487 A KR1019920004487 A KR 1019920004487A KR 920004487 A KR920004487 A KR 920004487A KR 920018965 A KR920018965 A KR 920018965A
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laser light
less
irradiating
silicon film
film
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KR1019920004487A
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KR960001608B1 (ko
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순페이 야마자끼
장홍영
나오또 구스모또
야스히꼬 다께무라
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순페이 야마자끼
가부시끼가이샤 한도다이 에네르기 겐뀨쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

반도체 재료 및 그 제작 방법과 박막 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 레이저 어닐된 규소 피막(피막증의 산소의 농도는 2×1021㎝-3)의 라만히터의 중심치(RAMAN SHIFT, 횡축)와 전자 이동도(종축)의 관계를 나타내는 그래프,
제2도는 여러가지 산소 농도의 레이저 어닐된 규소 피막의 라만 히터의 중심치 (RAMAN SHIFT, 횡축)와 전자 이동도(종축)의 관계를 나타내는 그래프,
제5도는 2개의 전계효과 트랜지스터의 채널형성 영역에 있어서 라만히터의 FWM의 장소 의존성을 나타내는 그래프, (종축 : FWHM, 횡축 : X/L(L: 채널길이).

Claims (10)

  1. 탄소, 질소 및 산소의 농도가 모두 5×1019㎝-3이하, 바람직한 것은 1×1019㎝-3이하인 아몰파스 규소막을 레이저 광 또는 그것과 같은 감광을 조사하여, 용융시키지 않고, 질서화시킴으로서 얻어진 것을 특징으로 하는 반도체 재료.
  2. 제1항에 있어서, 레이저 광은 펄스 발진 엑시머레이저 광인 것을 특징으로 하는 반도체 재료.
  3. 제1항에 있어서, 상기 반도체 재료는 레이저 광 또는 그것과 같은 감광을 조사시킨후, 수소를 포함하는 분위기중에서 열처리된 것을 특징으로 하는 반도체 재료.
  4. 탄소, 질소 및 산소의 농도가 모두 5×1019㎝-3이하, 또는 1×1019㎝-3이하인 아몰파스 규소막을 형성하는 공정과, 상기 규소피막에 레이저 광 또는 그것과 동등한 감광을 조사하여, 용융하지 않고, 질소화시키는 공정을 가지는 것을 특징으로 하는 반도체 제작방법.
  5. 탄소, 질소 및 산소의 농도가 모두 5×1019㎝-3이하, 바람직한 것은 1×1019㎝-3이하인 아몰파스 규소막을 형성하는 공정과, 규소피막상에 산화규소, 질화규소, 탄화규소의 보호피막을 형성하는 공정과, 상기 보호피막을 통하여 레이저 광 또는 그것과 동등한 감광을 조사하여, 용융하지 않고, 질서화시키는 공정을 가지는 것을 특징으로 하는 반도체 재료의 제작방법.
  6. 제5항에 있어서, 보호피막의 화학식은 SiN×OyC2(O≤x≤4/3, O≤y≤2, O≤z≤1, 0≤3x+2y+4z≤-4)이고, 보호피막은 후의 공정에서 사용되는 레이저 광 또는 그것과 동등한 감광을 투여하는 것을 특징으로 하는 반도체 재료의 제작방법.
  7. 탄소, 질소 및 산호의 농도가 모두 5×1019㎝-3이하, 바람직한 것은 1×1019㎝-3이하인 아몰파스 규소막을 형성하는 공정과, 상기 규소피막에 레이저 광 또는 그것과 동등한 감광을 조사하여, 용융하지 않고, 질서화시키는 공정과, 그후, 수소를 포함하는 분위기 중에서, 200~600도C로서 열처리를 행하는 공정을 가지는 것을 특징으로 하는 반도체 재료의 제작방법.
  8. 탄소, 질소 및 산호의 농도가 모두 5×1019㎝-3이하, 바람직한 것은 1×1019㎝-3이하인 아몰파스 규소막을 레이저 광 또는 그것과 동등한 감광을 조사하여, 용융시키지 않고 질서화시키므로서 얻어진 활성층을 가지는 것을 특징으로 하는 박막트랜지스터.
  9. 제8항에 있어서, 레이저 광은 펄스 발진 엑시머레이저 광인 것을 특징으로 하는 박막트랜지스터.
  10. 제8항에 있어서, 채널형성 영역을 상기 활성층중에 가지는 것을 특징으로 하는 박막트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임
KR1019920004487A 1991-03-18 1992-03-18 반도체 재료 및 그 제작 방법과 박막 트랜지스터 KR960001608B1 (ko)

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JP3080800A JPH0824104B2 (ja) 1991-03-18 1991-03-18 半導体材料およびその作製方法
JP91-80800 1991-03-18

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KR960001608B1 KR960001608B1 (ko) 1996-02-02

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