KR101009646B1 - 박막 트랜지스터 및 이를 구비한 표시 장치 - Google Patents
박막 트랜지스터 및 이를 구비한 표시 장치 Download PDFInfo
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- KR101009646B1 KR101009646B1 KR1020070077396A KR20070077396A KR101009646B1 KR 101009646 B1 KR101009646 B1 KR 101009646B1 KR 1020070077396 A KR1020070077396 A KR 1020070077396A KR 20070077396 A KR20070077396 A KR 20070077396A KR 101009646 B1 KR101009646 B1 KR 101009646B1
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- gate insulating
- insulating film
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- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 87
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002425 crystallisation Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000007790 solid phase Substances 0.000 claims description 4
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 95
- 230000007547 defect Effects 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 240000001973 Ficus microcarpa Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
제2 게이트 절연막(SiNx)의 두께 | 제1 게이트 절연막(TEOS)의 두께 | |
실험예 1 | 200 Å | 400 Å |
실험예 2 | 300 Å | 300 Å |
실험예 3 | 400 Å | 200 Å |
비교예 1 | 400 Å | 400 Å |
비교예 2 | 400 Å | 600 Å |
Vth(V) | Mobility(㎠/Vs) | Ion(A/㎛) | S-factor(v/dec) | |
실험예 1 | -6.15 | 11.75 | -0.20 x 10-13 | 1.04 |
실험예 2 | -5.29 | 13.38 | -0.37 x 10-13 | 0.97 |
실험예 3 | -4.63 | 16.89 | -0.68 x 10-13 | 0.9 |
비교예 1 | -6.94 | 5.80 | -0.04 x 10-13 | 1.02 |
비교예 2 | -7.83 | 3.39 | -0.02 x 10-13 | 1.14 |
Claims (10)
- 삭제
- 삭제
- 삭제
- 삭제
- 기판 상에 형성된 액티브층과 게이트 전극을 절연시키며 산화물을 포함하는 제1 게이트 절연막 및 질화물을 포함하는 제2 게이트 절연막을 포함하고,상기 제1 게이트 절연막은 상기 액티브층과 상기 제2 게이트 절연막 사이에 위치하며,상기 제1 게이트 절연막의 두께 및 상기 제2 게이트 절연막의 두께는 200Å 내지 400Å이며,상기 제2 게이트 절연막의 두께가 상기 제1 게이트 절연막의 두께보다 크며,상기 액티브층은 비정질 실리콘막을 고상 결정화 방법에 의해 결정화하고 다시 수소 분위기에서 열처리한 폴리 실리콘막으로 이루어지는 박막 트랜지스터.
- 제5항에 있어서,상기 제1 게이트 절연막의 두께와 상기 제2 게이트 절연막의 두께의 합은 600Å인 박막 트랜지스터.
- 제5항 또는 제6항에 따른 박막 트랜지스터를 포함하는 표시 장치.
- 제7항에 있어서,상기 박막 트랜지스터와 전기적으로 연결되고, 제1 전극, 유기 발광층 및 제2 전극이 적층된 유기 발광 소자를 포함하는 표시 장치.
- 기판 상에 비정질 실리콘막을 형성하는 단계;상기 비정질 실리콘막에 대한 탈수소 공정을 수행하는 단계;상기 비정질 실리콘막을 결정화하여 폴리 실리콘막을 형성하는 단계;상기 폴리 실리콘막을 패터닝하여 액티브층을 형성하는 단계;상기 액티브층 상에 산화물을 포함하는 제1 게이트 절연막을 형성하는 단계;상기 제1 게이트 절연막 상에 상기 제1 게이트 절연막보다 두께가 크며 질화물을 포함하는 제2 게이트 절연막을 형성하는 단계; 및상기 제1 게이트 절연막 및 상기 제2 게이트 절연막이 형성된 후에 수소 분위기에서 상기 액티브층을 열처리하는 단계를 포함하는 박막 트랜지스터의 제조 방법.
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020070077396A KR101009646B1 (ko) | 2007-08-01 | 2007-08-01 | 박막 트랜지스터 및 이를 구비한 표시 장치 |
US12/219,747 US7800110B2 (en) | 2007-08-01 | 2008-07-28 | Thin film transistor, display device having the same, and associated methods |
Applications Claiming Priority (1)
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KR1020070077396A KR101009646B1 (ko) | 2007-08-01 | 2007-08-01 | 박막 트랜지스터 및 이를 구비한 표시 장치 |
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KR20090013347A KR20090013347A (ko) | 2009-02-05 |
KR101009646B1 true KR101009646B1 (ko) | 2011-01-19 |
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KR1020070077396A KR101009646B1 (ko) | 2007-08-01 | 2007-08-01 | 박막 트랜지스터 및 이를 구비한 표시 장치 |
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US (1) | US7800110B2 (ko) |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101065413B1 (ko) * | 2009-07-03 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101784994B1 (ko) * | 2011-03-31 | 2017-10-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP5740270B2 (ja) * | 2011-09-27 | 2015-06-24 | 株式会社東芝 | 薄膜トランジスタ、その製造方法、および表示装置 |
KR101901832B1 (ko) * | 2011-12-14 | 2018-09-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
TWI584383B (zh) | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP6106024B2 (ja) | 2013-05-21 | 2017-03-29 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
KR101977233B1 (ko) * | 2017-09-29 | 2019-08-28 | 엘지디스플레이 주식회사 | 반사 전극, 그 제조 방법 및 반사 전극을 포함하는 유기발광 다이오드 표시장치 |
CN109148596B (zh) * | 2018-08-17 | 2021-06-04 | 武汉华星光电半导体显示技术有限公司 | 低温多晶硅薄膜晶体管及其制作方法 |
CN109887934A (zh) * | 2019-02-28 | 2019-06-14 | 武汉华星光电半导体显示技术有限公司 | 一种薄膜晶体管及其阵列基板、显示面板 |
KR20210057843A (ko) * | 2019-11-12 | 2021-05-24 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Citations (4)
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---|---|---|---|---|
US3793090A (en) * | 1972-11-21 | 1974-02-19 | Ibm | Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics |
JP2005260168A (ja) | 2004-03-15 | 2005-09-22 | Sharp Corp | トランジスタを備えた装置およびその製造方法 |
KR20060035507A (ko) * | 2004-10-22 | 2006-04-26 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR20070040017A (ko) * | 2005-10-11 | 2007-04-16 | 삼성전자주식회사 | 박막 트랜지스터 및 이의 제조방법 |
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US3974515A (en) * | 1974-09-12 | 1976-08-10 | Rca Corporation | IGFET on an insulating substrate |
JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
KR100544145B1 (ko) * | 2004-05-24 | 2006-01-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판표시장치 |
US7592628B2 (en) * | 2006-07-21 | 2009-09-22 | Tpo Displays Corp. | Display with thin film transistor devices having different electrical characteristics in pixel and driving regions |
-
2007
- 2007-08-01 KR KR1020070077396A patent/KR101009646B1/ko active IP Right Grant
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2008
- 2008-07-28 US US12/219,747 patent/US7800110B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3793090A (en) * | 1972-11-21 | 1974-02-19 | Ibm | Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics |
JP2005260168A (ja) | 2004-03-15 | 2005-09-22 | Sharp Corp | トランジスタを備えた装置およびその製造方法 |
KR20060035507A (ko) * | 2004-10-22 | 2006-04-26 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR20070040017A (ko) * | 2005-10-11 | 2007-04-16 | 삼성전자주식회사 | 박막 트랜지스터 및 이의 제조방법 |
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Publication number | Publication date |
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US20090101911A1 (en) | 2009-04-23 |
US7800110B2 (en) | 2010-09-21 |
KR20090013347A (ko) | 2009-02-05 |
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