JP2000114172A5 - - Google Patents
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- Publication number
- JP2000114172A5 JP2000114172A5 JP1998255494A JP25549498A JP2000114172A5 JP 2000114172 A5 JP2000114172 A5 JP 2000114172A5 JP 1998255494 A JP1998255494 A JP 1998255494A JP 25549498 A JP25549498 A JP 25549498A JP 2000114172 A5 JP2000114172 A5 JP 2000114172A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- manufacturing
- semiconductor device
- oxidation
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 45
- 238000000034 method Methods 0.000 claims 23
- 238000004519 manufacturing process Methods 0.000 claims 17
- 239000013078 crystal Substances 0.000 claims 16
- 230000003647 oxidation Effects 0.000 claims 10
- 238000007254 oxidation reaction Methods 0.000 claims 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10255494A JP2000114172A (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
| US09/369,158 US6559036B1 (en) | 1998-08-07 | 1999-08-06 | Semiconductor device and method of manufacturing the same |
| US09/908,727 US7186600B2 (en) | 1998-08-07 | 2001-07-20 | Semiconductor device and method of manufacturing the same |
| US11/653,951 US7847294B2 (en) | 1998-08-07 | 2007-01-17 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22507098 | 1998-08-07 | ||
| JP10-225070 | 1998-08-07 | ||
| JP10255494A JP2000114172A (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114172A JP2000114172A (ja) | 2000-04-21 |
| JP2000114172A5 true JP2000114172A5 (ko) | 2005-10-27 |
Family
ID=26526419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10255494A Withdrawn JP2000114172A (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000114172A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4376979B2 (ja) | 1998-01-12 | 2009-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6770518B2 (en) | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| SG114530A1 (en) | 2001-02-28 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2013054505A1 (ja) * | 2011-10-12 | 2013-04-18 | パナソニック株式会社 | 薄膜トランジスタ装置 |
-
1998
- 1998-09-09 JP JP10255494A patent/JP2000114172A/ja not_active Withdrawn
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