JP4407685B2 - 半導体装置の製造方法および電子機器の製造方法 - Google Patents
半導体装置の製造方法および電子機器の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 claims description 166
- 239000007789 gas Substances 0.000 claims description 137
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 76
- 239000001257 hydrogen Substances 0.000 claims description 71
- 229910052739 hydrogen Inorganic materials 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 54
- 239000010703 silicon Substances 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 43
- 239000011521 glass Substances 0.000 claims description 41
- 238000001953 recrystallisation Methods 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 25
- 239000007790 solid phase Substances 0.000 claims description 18
- 239000000446 fuel Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 112
- 238000011282 treatment Methods 0.000 description 40
- 238000010438 heat treatment Methods 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 238000000137 annealing Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 238000012545 processing Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 14
- 239000000567 combustion gas Substances 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000005868 electrolysis reaction Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 description 1
- 229950000809 timiperone Drugs 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
まず、本実施の形態の半導体装置の製造に用いられる半導体製造装置について図1〜図9を参照しながら説明する。
ここで、本実施の形態の水素火炎処理においては、(1)基板表面温度670〜750℃、固相結晶成長をさせることが可能である。また、(2)基板走査速度を0.01〜1.5m/s(アニール時間:1〜0.0067s)とすることで、(3)熱拡散長を0.8〜0.04mmに抑えることが可能である(グラフc)参照)。よって、かかる範囲での熱処理によれば、基板のバルク温度を600℃以下としつつ、シリコン膜の固相結晶成長による再結晶化を行なうことができる。その結果、耐熱性は高いが高価である石英ガラスのみならず、耐熱性の低い安価なソーダガラスなどを基板材料として用いることができる。
次に、前述した水素火炎処理装置(半導体製造装置)を使用した半導体装置(TFT)の製造方法について図15および図16を参照しながら説明する。図15および図16は、本実施の形態の半導体装置(TFT)の製造方法を示す工程断面図である。
次いで、具体的な実験結果に基づいて結晶特性を向上させる方法について説明する。
<電気光学装置および電子機器の説明>
次に、前述の実施の形態で説明した方法で形成される半導体装置(例えばTFT)が使用される電気光学装置や電子機器について説明する。
Claims (7)
- 半導体装置の製造方法であって、
ガラス基板上にシリコン膜を成膜する工程と、
水素及び酸素の混合ガスを燃料とするガスバーナーの火炎を熱源として前記ガラス基板上に対し相対的に走査し、前記シリコン膜の再結晶化を行う工程と、を有し、
前記ガスバーナーの火炎の走査速度は0.01m/s以上1.5m/s以下で、前記ガ
ラス基板上に走査され、
前記再結晶化は、固相結晶成長によりなされ、
前記再結晶化を行なう工程における前記ガラス基板に対する熱拡散長は、0.8〜0.04mmである
ことを特徴とする半導体装置の製造方法。 - 前記ガスバーナーの火炎の走査速度は0.02m/s以上0.5m/s以下で、前記ガラス基板上に走査されることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記再結晶化を行なう工程における前記ガラス基板に対する熱拡散長は、0.5〜0.08mmであることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記再結晶化を行なう工程における前記ガラス基板に対する熱拡散長は、前記ガラス基板の厚さの75%以下であることを特徴とする請求項1乃至3のいずれか一項記載の半導体装置の製造方法。
- 前記再結晶化を行なう工程における前記ガラス基板に対する熱拡散長は、前記ガラス基板の厚さの40%以下であることを特徴とする請求項1乃至4のいずれか一項記載の半導体装置の製造方法。
- 前記再結晶化を行なう工程における前記ガラス基板の表面温度は、670〜750℃であることを特徴とする請求項1乃至5のいずれか一項記載の半導体装置の製造方法。
- 半導体装置を有する電子機器の製造方法であって、請求項1乃至6のいずれか一項に記載の半導体装置の製造方法を有する電子機器の製造方法。
Priority Applications (5)
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JP2006277932A JP4407685B2 (ja) | 2006-10-11 | 2006-10-11 | 半導体装置の製造方法および電子機器の製造方法 |
US11/905,961 US7935585B2 (en) | 2006-10-11 | 2007-10-05 | Method of fabricating semiconductor device and method for fabricating electronic device |
TW096137377A TW200834740A (en) | 2006-10-11 | 2007-10-05 | Method for fabricating semiconductor device and method for fabricating electronic device |
KR1020070101995A KR20080033095A (ko) | 2006-10-11 | 2007-10-10 | 반도체 장치의 제조 방법 및 전자 기기의 제조 방법 |
CNA2007101807516A CN101221906A (zh) | 2006-10-11 | 2007-10-11 | 半导体装置的制造方法和电子仪器的制造方法 |
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JP2006277932A JP4407685B2 (ja) | 2006-10-11 | 2006-10-11 | 半導体装置の製造方法および電子機器の製造方法 |
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JP4407685B2 true JP4407685B2 (ja) | 2010-02-03 |
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US (1) | US7935585B2 (ja) |
JP (1) | JP4407685B2 (ja) |
KR (1) | KR20080033095A (ja) |
CN (1) | CN101221906A (ja) |
TW (1) | TW200834740A (ja) |
Families Citing this family (7)
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JP4453021B2 (ja) * | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP4453693B2 (ja) * | 2005-11-14 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び電子機器の製造方法 |
JP4362834B2 (ja) * | 2006-10-11 | 2009-11-11 | セイコーエプソン株式会社 | 半導体装置の製造方法、電子機器の製造方法および半導体製造装置 |
US9482518B2 (en) | 2012-06-07 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for semiconductor device process determination using reflectivity measurement |
US8753904B2 (en) | 2012-06-07 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for semiconductor device pattern loading effect characterization |
JP6068074B2 (ja) * | 2012-09-20 | 2017-01-25 | 株式会社ディスコ | ゲッタリング層形成方法 |
CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化系统和对单晶半导体基板进行多晶化的方法 |
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US3786382A (en) * | 1972-12-27 | 1974-01-15 | Gen Electric | Compact circuit breaker |
DE2324783A1 (de) | 1973-05-16 | 1974-12-12 | Siemens Ag | Verfahren und vorrichtung zum herstellen eines kristalls nach verneuil |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
JPS56137643A (en) | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Thermal processing of semiconductor |
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TW200834740A (en) | 2008-08-16 |
JP2008098372A (ja) | 2008-04-24 |
CN101221906A (zh) | 2008-07-16 |
US20080090388A1 (en) | 2008-04-17 |
KR20080033095A (ko) | 2008-04-16 |
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