KR20180093823A - 선택적 패시베이션 및 선택적 증착 - Google Patents

선택적 패시베이션 및 선택적 증착 Download PDF

Info

Publication number
KR20180093823A
KR20180093823A KR1020180017259A KR20180017259A KR20180093823A KR 20180093823 A KR20180093823 A KR 20180093823A KR 1020180017259 A KR1020180017259 A KR 1020180017259A KR 20180017259 A KR20180017259 A KR 20180017259A KR 20180093823 A KR20180093823 A KR 20180093823A
Authority
KR
South Korea
Prior art keywords
layer
dielectric
selectively
deposition
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020180017259A
Other languages
English (en)
Korean (ko)
Inventor
에바 에. 토이스
수비 프. 하우카
라이야 흐. 마테로
엘리나 파름
델프히네 롱리에
히데미 스에모리
잔 윌렘 매즈
마르코 투오미넨
샤오런 덩
이보 요하네스 라이마커르스
안드레아 일리베리
Original Assignee
에이에스엠 아이피 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠 아이피 홀딩 비.브이. filed Critical 에이에스엠 아이피 홀딩 비.브이.
Publication of KR20180093823A publication Critical patent/KR20180093823A/ko
Priority to KR1020240053275A priority Critical patent/KR102841716B1/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H01L21/0228—
    • H01L21/0262—
    • H01L21/3065—
    • H01L21/32055—
    • H01L21/3213—
    • H01L21/7682—
    • H01L21/76829—
    • H01L21/76838—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020180017259A 2017-02-14 2018-02-12 선택적 패시베이션 및 선택적 증착 Ceased KR20180093823A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020240053275A KR102841716B1 (ko) 2017-02-14 2024-04-22 선택적 패시베이션 및 선택적 증착

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201762458952P 2017-02-14 2017-02-14
US62/458,952 2017-02-14
US201762481524P 2017-04-04 2017-04-04
US62/481,524 2017-04-04
US201762591724P 2017-11-28 2017-11-28
US62/591,724 2017-11-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020240053275A Division KR102841716B1 (ko) 2017-02-14 2024-04-22 선택적 패시베이션 및 선택적 증착

Publications (1)

Publication Number Publication Date
KR20180093823A true KR20180093823A (ko) 2018-08-22

Family

ID=63105424

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020180017259A Ceased KR20180093823A (ko) 2017-02-14 2018-02-12 선택적 패시베이션 및 선택적 증착
KR1020240053275A Active KR102841716B1 (ko) 2017-02-14 2024-04-22 선택적 패시베이션 및 선택적 증착
KR1020250103620A Pending KR20250123732A (ko) 2017-02-14 2025-07-29 선택적 패시베이션 및 선택적 증착

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020240053275A Active KR102841716B1 (ko) 2017-02-14 2024-04-22 선택적 패시베이션 및 선택적 증착
KR1020250103620A Pending KR20250123732A (ko) 2017-02-14 2025-07-29 선택적 패시베이션 및 선택적 증착

Country Status (4)

Country Link
US (3) US11094535B2 (https=)
JP (3) JP7169072B2 (https=)
KR (3) KR20180093823A (https=)
TW (3) TWI859743B (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102027776B1 (ko) * 2018-09-04 2019-11-04 전북대학교산학협력단 무한 선택비를 갖는 원자층증착법을 이용한 패턴의 제조 방법
KR20200108243A (ko) * 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20210043745A (ko) * 2018-09-14 2021-04-21 어플라이드 머티어리얼스, 인코포레이티드 선택적 산화알루미늄 막 증착
KR20220058634A (ko) * 2019-09-24 2022-05-09 도쿄엘렉트론가부시키가이샤 성막 방법
KR20220058636A (ko) * 2019-09-24 2022-05-09 도쿄엘렉트론가부시키가이샤 성막 방법
KR20220113328A (ko) * 2019-03-18 2022-08-12 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
KR20230150367A (ko) * 2021-03-09 2023-10-30 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
WO2024117887A1 (ko) * 2022-11-30 2024-06-06 주식회사 동진쎄미켐 절연막 패턴 형성 방법 및 반도체 소자
WO2024263543A1 (en) * 2023-06-19 2024-12-26 Applied Materials, Inc. Selective liner deposition for via resistance reduction
WO2025135449A1 (ko) * 2023-12-18 2025-06-26 주식회사 원익아이피에스 기판 처리 방법
US12540387B2 (en) * 2020-03-30 2026-02-03 Asm Ip Holding B.V. Simultaneous selective deposition of two different materials on two different surfaces

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US9895715B2 (en) 2014-02-04 2018-02-20 Asm Ip Holding B.V. Selective deposition of metals, metal oxides, and dielectrics
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10343186B2 (en) 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
WO2017184357A1 (en) 2016-04-18 2017-10-26 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US10770286B2 (en) * 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
JP7183187B2 (ja) 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
CN109786316B (zh) * 2017-11-10 2020-12-15 中芯国际集成电路制造(上海)有限公司 半导体器件、制造方法和电子设备
US10741392B2 (en) * 2017-11-28 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure
EP3503164A1 (en) * 2017-12-21 2019-06-26 IMEC vzw Selective deposition of metal-organic frameworks
KR102604652B1 (ko) * 2018-01-10 2023-11-22 제이에스알 가부시끼가이샤 패턴 형성 방법
TWI799494B (zh) * 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
JP7146690B2 (ja) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． 堆積および除去を使用した選択的層形成
KR102743163B1 (ko) 2018-07-02 2024-12-16 샌트랄 글래스 컴퍼니 리미티드 기판, 기판의 금속표면영역에 대한 선택적인 막 퇴적방법, 유기물의 퇴적막 및 유기물
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US11769692B2 (en) 2018-10-31 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. High breakdown voltage inter-metal dielectric layer
TWI757659B (zh) * 2018-11-23 2022-03-11 美商應用材料股份有限公司 碳膜的選擇性沉積及其用途
JP7110090B2 (ja) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 基板処理方法および基板処理システム
WO2020145269A1 (ja) 2019-01-10 2020-07-16 セントラル硝子株式会社 基板、選択的膜堆積方法、有機物の堆積膜及び有機物
WO2020121540A1 (ja) 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
US11965238B2 (en) * 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US11164742B2 (en) * 2019-04-30 2021-11-02 Beijing E-town Semiconductor Technology Co., Ltd. Selective deposition using methylation treatment
US20200347493A1 (en) * 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
JP7531981B2 (ja) * 2019-07-18 2024-08-13 東京エレクトロン株式会社 領域選択的堆積における横方向のフィルム成長を緩和するための方法
US20220316059A1 (en) * 2019-07-25 2022-10-06 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
US12525486B2 (en) * 2019-10-31 2026-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure for metal interconnect
JP7625599B2 (ja) 2019-11-20 2025-02-03 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 金属含有膜を選択的に形成するための化合物および方法
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
JP7365898B2 (ja) * 2019-12-27 2023-10-20 東京エレクトロン株式会社 成膜方法及び成膜装置
US20230108732A1 (en) * 2020-02-04 2023-04-06 Merck Patent Gmbh Methods Of Selectively Forming Metal-Containing Films
WO2021194776A1 (en) * 2020-03-26 2021-09-30 Applied Materials, Inc. Catalytic formation of boron and carbon films
TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
US11251073B2 (en) 2020-04-01 2022-02-15 Taiwan Semiconductor Manufacturing Co. Selective deposition of barrier layer
US11542597B2 (en) * 2020-04-08 2023-01-03 Applied Materials, Inc. Selective deposition of metal oxide by pulsed chemical vapor deposition
KR20230026385A (ko) 2020-06-17 2023-02-24 도쿄엘렉트론가부시키가이샤 영역 선택적 증착에서 측방 막 형성을 감소시키는 방법
KR20210158811A (ko) 2020-06-24 2021-12-31 에이에스엠 아이피 홀딩 비.브이. 유기 재료의 영역 선택적 제거
KR102949674B1 (ko) 2020-08-31 2026-04-06 삼성전자주식회사 인터커넥트 구조체의 형성방법
JP2022050198A (ja) * 2020-09-17 2022-03-30 東京エレクトロン株式会社 成膜方法及び成膜装置
US12431358B2 (en) * 2020-10-16 2025-09-30 Applied Materials, Inc. Methods and materials for enhanced barrier performance and reduced via resistance
US11515154B2 (en) * 2020-10-27 2022-11-29 Applied Materials, Inc. Selective deposition of a passivation film
JP2023553386A (ja) * 2020-12-01 2023-12-21 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 選択的プラズマ強化原子層堆積
US11955382B2 (en) * 2020-12-03 2024-04-09 Applied Materials, Inc. Reverse selective etch stop layer
KR20220081907A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 억제제를 사용한 위치 선택적 기상 증착
JP7254971B2 (ja) * 2020-12-16 2023-04-10 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
CN116685715A (zh) 2021-02-01 2023-09-01 中央硝子株式会社 基板、选择性膜沉积方法、有机物的沉积膜及有机物
JP2022135709A (ja) * 2021-03-05 2022-09-15 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7339975B2 (ja) * 2021-03-18 2023-09-06 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、及びプログラム
WO2022212708A1 (en) * 2021-04-01 2022-10-06 The Trustees Of Princeton University Distributed non-equilibrium chemical and material synthesis using combined plasma activation and programed heating and quenching
KR102916527B1 (ko) 2021-06-24 2026-01-21 삼성전자 주식회사 집적회로 소자 및 그 제조 방법
JP2024523510A (ja) * 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
JP2023009762A (ja) * 2021-07-08 2023-01-20 東京エレクトロン株式会社 エッチング方法
JP2023023459A (ja) 2021-08-05 2023-02-16 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2023026843A (ja) * 2021-08-16 2023-03-01 東京エレクトロン株式会社 成膜方法及び成膜装置
US11756785B2 (en) * 2021-08-20 2023-09-12 Applied Materials, Inc. Molecular layer deposition contact landing protection for 3D NAND
US11990369B2 (en) * 2021-08-20 2024-05-21 Applied Materials, Inc. Selective patterning with molecular layer deposition
US12211743B2 (en) 2021-09-03 2025-01-28 Applied Materials, Inc. Method of forming a metal liner for interconnect structures
TW202403076A (zh) 2021-09-30 2024-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 有機材料之選擇性沉積
TW202325887A (zh) 2021-10-29 2023-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 使用電漿選擇性沉積含矽及氧之材料
WO2023096270A1 (ko) * 2021-11-26 2023-06-01 솔브레인 주식회사 고유전율 박막용 가리움제, 이를 이용한 선택영역증착 방법, 이로부터 제조된 반도체 기판 및 반도체 소자
US12454752B2 (en) * 2022-01-14 2025-10-28 Asm Ip Holding B.V. Method and apparatus for forming a patterned structure on a substrate
KR20230126792A (ko) * 2022-02-24 2023-08-31 주성엔지니어링(주) 기판처리방법
JP7315744B1 (ja) 2022-03-14 2023-07-26 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US12272551B2 (en) 2022-05-25 2025-04-08 Applied Materials, Inc. Selective metal removal with flowable polymer
US12290835B2 (en) 2022-07-18 2025-05-06 Tokyo Electron Limited Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
US11691175B1 (en) 2022-07-18 2023-07-04 Tokyo Electron Limited Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)
JP2024049188A (ja) * 2022-09-28 2024-04-09 東京エレクトロン株式会社 膜形成方法及び基板処理装置
US12394620B2 (en) * 2022-10-28 2025-08-19 Applied Materials, Inc. Benzyl compound passivation for selective deposition and selective etch protection
US12438050B2 (en) * 2023-02-14 2025-10-07 Applied Materials, Inc. Electronic device fabrication using area-selective deposition
KR20240145189A (ko) 2023-03-27 2024-10-07 현대자동차주식회사 차량용 객체 인지 방법 및 객체 인지 장치
JP2024165284A (ja) 2023-05-17 2024-11-28 東京応化工業株式会社 表面処理膜の形成方法
US12593629B2 (en) 2023-06-29 2026-03-31 Applied Materials, Inc. Selective deposition processes on semiconductor substrates
US12598969B2 (en) 2023-06-29 2026-04-07 Applied Materials, Inc. Flexible monomer for smooth polymer surface
US12604685B2 (en) * 2023-07-19 2026-04-14 Tokyo Electron Limited Methods for controlling spin-on self-assembled monolayer (SAM) selectivity
US12588436B2 (en) 2023-10-26 2026-03-24 International Business Machines Corporation Area selective deposition of hardmasks for vacuum gap formation
KR20250075000A (ko) * 2023-11-21 2025-05-28 삼성전자주식회사 폴리우레아를 이용한 영역 선택적 성막 방법

Family Cites Families (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613398A (en) 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4804640A (en) 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
US4948755A (en) 1987-10-08 1990-08-14 Standard Microsystems Corporation Method of manufacturing self-aligned conformal metallization of semiconductor wafer by selective metal deposition
US4863879A (en) 1987-12-16 1989-09-05 Ford Microelectronics, Inc. Method of manufacturing self-aligned GaAs MESFET
JPH0233153A (ja) 1988-07-22 1990-02-02 Toshiba Corp 半導体装置の製造方法
JPH0485024A (ja) 1990-07-30 1992-03-18 Mitsubishi Gas Chem Co Inc 銅張積層板の製造法
JP2614676B2 (ja) 1991-05-10 1997-05-28 化学技術振興事業団 薄膜製造方法と薄膜デバイス
DE4115872A1 (de) 1991-05-15 1992-11-19 Basf Ag Verfahren zur herstellung duenner polyimidschutzschichten auf keramischen supraleitern oder hochtemperatursupraleitern
JP3048749B2 (ja) 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5447887A (en) 1994-04-01 1995-09-05 Motorola, Inc. Method for capping copper in semiconductor devices
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
JP3373320B2 (ja) 1995-02-10 2003-02-04 株式会社アルバック 銅配線製造方法
US5633036A (en) 1995-04-21 1997-05-27 The Board Of Trustees Of The University Of Illinois Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions
US5925494A (en) 1996-02-16 1999-07-20 Massachusetts Institute Of Technology Vapor deposition of polymer films for photolithography
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5939334A (en) 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
US5869135A (en) 1997-10-03 1999-02-09 Massachusetts Institute Of Technology Selective chemical vapor deposition of polymers
FI104383B (fi) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Menetelmä laitteistojen sisäpintojen päällystämiseksi
US20060219157A1 (en) 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US6958174B1 (en) 1999-03-15 2005-10-25 Regents Of The University Of Colorado Solid material comprising a thin metal film on its surface and methods for producing the same
KR20010001072A (ko) 1999-06-01 2001-01-05 부원영 네트웍을 이용한 온라인 축구 게임 및 그 방법
US6046108A (en) 1999-06-25 2000-04-04 Taiwan Semiconductor Manufacturing Company Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby
KR20010010172A (ko) 1999-07-16 2001-02-05 윤종용 베리어 메탈막을 캐핑막으로 구비하는 도전패턴 형성방법
US7015271B2 (en) 1999-08-19 2006-03-21 Ppg Industries Ohio, Inc. Hydrophobic particulate inorganic oxides and polymeric compositions containing same
WO2001012731A1 (en) 1999-08-19 2001-02-22 Ppg Industries Ohio, Inc. Hydrophobic particulate inorganic oxides and polymeric compositions containing same
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
JP4382219B2 (ja) 1999-10-29 2009-12-09 日本電気株式会社 多結晶シリコン膜の水素化処理方法および薄膜トランジスタの製造方法
US6652709B1 (en) 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP2001308071A (ja) 2000-04-26 2001-11-02 Canon Inc Ｅ面分岐を有する導波管を用いたプラズマ処理装置及びプラズマ処理方法
US6319635B1 (en) 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6426015B1 (en) 1999-12-14 2002-07-30 Applied Materials, Inc. Method of reducing undesired etching of insulation due to elevated boron concentrations
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6455425B1 (en) 2000-01-18 2002-09-24 Advanced Micro Devices, Inc. Selective deposition process for passivating top interface of damascene-type Cu interconnect lines
JP4703810B2 (ja) 2000-03-07 2011-06-15 東京エレクトロン株式会社 Ｃｖｄ成膜方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
WO2001088972A1 (en) 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6679951B2 (en) 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6878628B2 (en) 2000-05-15 2005-04-12 Asm International Nv In situ reduction of copper oxide prior to silicon carbide deposition
DE10025550A1 (de) 2000-05-19 2001-11-29 Infineon Technologies Ag Verfahren zum Ätzen
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
KR100719177B1 (ko) 2000-07-31 2007-05-17 주식회사 하이닉스반도체 선택적 원자층 증착법을 이용한 텅스텐막 형성 방법
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
JP4095763B2 (ja) 2000-09-06 2008-06-04 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6455414B1 (en) 2000-11-28 2002-09-24 Tokyo Electron Limited Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
KR100869326B1 (ko) 2000-11-30 2008-11-18 에이에스엠 인터내셔널 엔.브이. 자기장치용 박막
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US7192827B2 (en) 2001-01-05 2007-03-20 Micron Technology, Inc. Methods of forming capacitor structures
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
JP2003109941A (ja) 2001-09-28 2003-04-11 Canon Inc プラズマ処理装置および表面処理方法
KR20030027392A (ko) 2001-09-28 2003-04-07 삼성전자주식회사 티타늄 실리사이드 박막 형성방법
TW508648B (en) 2001-12-11 2002-11-01 United Microelectronics Corp Method of reducing the chamber particle level
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US20030192090P1 (en) 2002-04-03 2003-10-09 Meilland Alain A. Hybrid tea rose plant named 'Meibderos'
US6586330B1 (en) 2002-05-07 2003-07-01 Tokyo Electron Limited Method for depositing conformal nitrified tantalum silicide films by thermal CVD
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
KR100459724B1 (ko) 2002-09-11 2004-12-03 삼성전자주식회사 저온 원자층증착에 의한 질화막을 식각저지층으로이용하는 반도체 소자 및 그 제조방법
US6982230B2 (en) 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
DE60330896D1 (de) 2002-11-15 2010-02-25 Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US7553686B2 (en) 2002-12-17 2009-06-30 The Regents Of The University Of Colorado, A Body Corporate Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices
KR20040056026A (ko) 2002-12-23 2004-06-30 주식회사 하이닉스반도체 구리 배선의 캐핑층 형성 방법
US6802945B2 (en) 2003-01-06 2004-10-12 Megic Corporation Method of metal sputtering for integrated circuit metal routing
FR2851181B1 (fr) 2003-02-17 2006-05-26 Commissariat Energie Atomique Procede de revetement d'une surface
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
WO2004102648A2 (en) 2003-05-09 2004-11-25 Asm America, Inc. Reactor surface passivation through chemical deactivation
US7914847B2 (en) 2003-05-09 2011-03-29 Asm America, Inc. Reactor surface passivation through chemical deactivation
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US6811448B1 (en) 2003-07-15 2004-11-02 Advanced Micro Devices, Inc. Pre-cleaning for silicidation in an SMOS process
US7067407B2 (en) 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7323411B1 (en) 2003-09-26 2008-01-29 Cypress Semiconductor Corporation Method of selective tungsten deposition on a silicon surface
US7375033B2 (en) 2003-11-14 2008-05-20 Micron Technology, Inc. Multi-layer interconnect with isolation layer
US7207096B2 (en) * 2004-01-22 2007-04-24 International Business Machines Corporation Method of manufacturing high performance copper inductors with bond pads
US7405143B2 (en) 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
KR20050103811A (ko) 2004-04-27 2005-11-01 삼성에스디아이 주식회사 플라즈마 증착 공정에 의해 형성된 박막트랜지스터
TW200539321A (en) 2004-05-28 2005-12-01 Applied Materials Inc Method for improving high density plasmachemical vapor deposition process
US20060019493A1 (en) 2004-07-15 2006-01-26 Li Wei M Methods of metallization for microelectronic devices utilizing metal oxide
US7151040B2 (en) 2004-08-31 2006-12-19 Micron Technology, Inc. Methods for increasing photo alignment margins
TW200619222A (en) 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
US8882914B2 (en) 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
US7476618B2 (en) 2004-10-26 2009-01-13 Asm Japan K.K. Selective formation of metal layers in an integrated circuit
US20060156979A1 (en) 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
US7160583B2 (en) 2004-12-03 2007-01-09 3M Innovative Properties Company Microfabrication using patterned topography and self-assembled monolayers
US7276433B2 (en) 2004-12-03 2007-10-02 Micron Technology, Inc. Methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
JP4258515B2 (ja) 2005-02-04 2009-04-30 パナソニック株式会社 回折素子、回折素子の製造方法、光ピックアップ装置および光ディスク装置
US20060199399A1 (en) 2005-02-22 2006-09-07 Muscat Anthony J Surface manipulation and selective deposition processes using adsorbed halogen atoms
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7425350B2 (en) 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7402519B2 (en) 2005-06-03 2008-07-22 Intel Corporation Interconnects having sealing structures to enable selective metal capping layers
KR100695876B1 (ko) 2005-06-24 2007-03-19 삼성전자주식회사 오버레이 키 및 그 형성 방법, 오버레이 키를 이용하여형성된 반도체 장치 및 그 제조 방법.
US20070014919A1 (en) 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US8771804B2 (en) 2005-08-31 2014-07-08 Lam Research Corporation Processes and systems for engineering a copper surface for selective metal deposition
US20070099422A1 (en) 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US20110198756A1 (en) 2005-11-28 2011-08-18 Thenappan Ue Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use
US7595271B2 (en) 2005-12-01 2009-09-29 Asm America, Inc. Polymer coating for vapor deposition tool
US7695567B2 (en) 2006-02-10 2010-04-13 Applied Materials, Inc. Water vapor passivation of a wall facing a plasma
US8187678B2 (en) 2006-02-13 2012-05-29 Stc.Unm Ultra-thin microporous/hybrid materials
US7601651B2 (en) 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
JP5032145B2 (ja) 2006-04-14 2012-09-26 株式会社東芝 半導体装置
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
EP2029790A1 (en) 2006-06-02 2009-03-04 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7790631B2 (en) 2006-11-21 2010-09-07 Intel Corporation Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
JP4881262B2 (ja) 2006-11-28 2012-02-22 株式会社荏原製作所 基板の表面処理方法
US8205625B2 (en) 2006-11-28 2012-06-26 Ebara Corporation Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
WO2008136882A2 (en) 2007-02-14 2008-11-13 The Board Of Trustees Of The Leland Stanford Junior University Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
US20080241575A1 (en) 2007-03-28 2008-10-02 Lavoie Adrein R Selective aluminum doping of copper interconnects and structures formed thereby
WO2009002892A1 (en) 2007-06-22 2008-12-31 The Regents Of The University Of Colorado Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques
EP2191034B1 (en) 2007-09-14 2013-03-13 Sigma-Aldrich Co. LLC Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl triamino zirconium precursors
JP2009076590A (ja) 2007-09-19 2009-04-09 Hitachi Kokusai Electric Inc クリーニング方法
US8030212B2 (en) 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
WO2009061666A1 (en) 2007-11-06 2009-05-14 Hcf Partners, L.P. Atomic layer deposition process
KR100920033B1 (ko) 2007-12-10 2009-10-07 (주)피앤테크 에스아이오씨 박막 제조용 프리커서를 이용한 박막 형성방법
US9217200B2 (en) 2007-12-21 2015-12-22 Asm International N.V. Modification of nanoimprint lithography templates by atomic layer deposition
JP5198106B2 (ja) 2008-03-25 2013-05-15 東京エレクトロン株式会社 成膜装置、及び成膜方法
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US7993950B2 (en) 2008-04-30 2011-08-09 Cavendish Kinetics, Ltd. System and method of encapsulation
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
EP2324509A2 (en) 2008-08-27 2011-05-25 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
WO2010062582A2 (en) 2008-10-27 2010-06-03 Applied Materials, Inc. Vapor deposition method for ternary compounds
EP2361445A4 (en) 2008-12-01 2012-07-04 Du Pont ANODE FOR AN ORGANIC ELECTRONIC DEVICE
US20100147396A1 (en) 2008-12-15 2010-06-17 Asm Japan K.K. Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US7927942B2 (en) 2008-12-19 2011-04-19 Asm International N.V. Selective silicide process
KR101556238B1 (ko) 2009-02-17 2015-10-01 삼성전자주식회사 매립형 배선라인을 갖는 반도체 소자의 제조방법
US8242019B2 (en) 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
GB0906105D0 (en) 2009-04-08 2009-05-20 Ulive Entpr Ltd Mixed metal oxides
JP2010250088A (ja) 2009-04-16 2010-11-04 Konica Minolta Business Technologies Inc 中間転写体、中間転写体の製造方法、及び画像形成装置
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
US20100314765A1 (en) 2009-06-16 2010-12-16 Liang Wen-Ping Interconnection structure of semiconductor integrated circuit and method for making the same
JP2011018742A (ja) 2009-07-08 2011-01-27 Renesas Electronics Corp 半導体装置の製造方法
JP5359642B2 (ja) 2009-07-22 2013-12-04 東京エレクトロン株式会社 成膜方法
US20120189868A1 (en) 2009-07-31 2012-07-26 Akzo Nobel Chemicals International B.V. Process for the preparation of a coated substrate, coated substrate, and use thereof
KR101129090B1 (ko) 2009-09-01 2012-04-13 성균관대학교산학협력단 패턴화된 세포 배양용 기판의 제조방법, 패턴화된 세포 배양용 기판, 세포의 패턴화된 배양 방법, 및 패턴화된 세포칩
JP2011222779A (ja) 2010-04-09 2011-11-04 Dainippon Printing Co Ltd 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8318249B2 (en) 2009-11-20 2012-11-27 Eastman Kodak Company Method for selective deposition and devices
US8481355B2 (en) 2009-12-15 2013-07-09 Primestar Solar, Inc. Modular system and process for continuous deposition of a thin film layer on a substrate
US8562750B2 (en) 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
JP5222864B2 (ja) 2010-02-17 2013-06-26 株式会社ジャパンディスプレイイースト 液晶表示装置の製造方法
JP5373669B2 (ja) 2010-03-05 2013-12-18 東京エレクトロン株式会社 半導体装置の製造方法
US8178439B2 (en) 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
TWI509695B (zh) * 2010-06-10 2015-11-21 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
US20110311726A1 (en) 2010-06-18 2011-12-22 Cambridge Nanotech Inc. Method and apparatus for precursor delivery
WO2012001848A1 (ja) 2010-07-01 2012-01-05 東京エレクトロン株式会社 半導体装置の製造方法
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
US8138097B1 (en) 2010-09-20 2012-03-20 Kabushiki Kaisha Toshiba Method for processing semiconductor structure and device based on the same
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
US8822350B2 (en) 2010-11-19 2014-09-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
US8329575B2 (en) 2010-12-22 2012-12-11 Applied Materials, Inc. Fabrication of through-silicon vias on silicon wafers
DE102011012515A1 (de) 2011-02-25 2012-08-30 Umicore Ag & Co. Kg Metallkomplexe mit N-Amino-Amidinat-Liganden
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
US8586478B2 (en) 2011-03-28 2013-11-19 Renesas Electronics Corporation Method of making a semiconductor device
JP2012209393A (ja) 2011-03-29 2012-10-25 Tokyo Electron Ltd クリーニング方法及び成膜方法
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
WO2012167141A2 (en) 2011-06-03 2012-12-06 Novellus Systems, Inc. Metal and silicon containing capping layers for interconnects
DE102011051260A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
KR20130007059A (ko) 2011-06-28 2013-01-18 삼성전자주식회사 반도체 장치의 제조 방법
EP2557132B1 (en) 2011-08-10 2018-03-14 3M Innovative Properties Company Multilayer adhesive film, in particular for bonding optical sensors
CN102332395B (zh) 2011-09-23 2014-03-05 复旦大学 一种选择性淀积栅氧和栅电极的方法
US8921228B2 (en) 2011-10-04 2014-12-30 Imec Method for selectively depositing noble metals on metal/metal nitride substrates
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
TWI541377B (zh) 2011-11-04 2016-07-11 Ａｓｍ國際股份有限公司 形成摻雜二氧化矽薄膜的方法
FR2982608B1 (fr) 2011-11-16 2013-11-22 Saint Gobain Couche barriere aux metaux alcalins a base de sioc
KR20130056608A (ko) 2011-11-22 2013-05-30 에스케이하이닉스 주식회사 상변화 메모리 장치 및 그의 제조방법
US9112003B2 (en) * 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US20130157409A1 (en) 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
US8623468B2 (en) 2012-01-05 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabricating metal hard masks
US8962423B2 (en) 2012-01-18 2015-02-24 International Business Machines Corporation Multilayer MIM capacitor
US9194840B2 (en) 2012-01-19 2015-11-24 Life Technologies Corporation Sensor arrays and methods for making same
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
JP6020239B2 (ja) 2012-04-27 2016-11-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
JP5966618B2 (ja) 2012-05-28 2016-08-10 東京エレクトロン株式会社 成膜方法
JP5862459B2 (ja) 2012-05-28 2016-02-16 東京エレクトロン株式会社 成膜方法
US20130323930A1 (en) 2012-05-29 2013-12-05 Kaushik Chattopadhyay Selective Capping of Metal Interconnect Lines during Air Gap Formation
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US11037923B2 (en) 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
JP6040609B2 (ja) 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
WO2014015248A1 (en) 2012-07-20 2014-01-23 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US8890264B2 (en) 2012-09-26 2014-11-18 Intel Corporation Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
US9099490B2 (en) 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
JP2014093331A (ja) 2012-10-31 2014-05-19 Tokyo Electron Ltd 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US8963135B2 (en) 2012-11-30 2015-02-24 Intel Corporation Integrated circuits and systems and methods for producing the same
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
JP5827939B2 (ja) 2012-12-17 2015-12-02 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜装置
US8993404B2 (en) 2013-01-23 2015-03-31 Intel Corporation Metal-insulator-metal capacitor formation techniques
US9566609B2 (en) 2013-01-24 2017-02-14 Corning Incorporated Surface nanoreplication using polymer nanomasks
KR20150111938A (ko) 2013-01-31 2015-10-06 다이니폰 인사츠 가부시키가이샤 전자선 경화성 수지 조성물, 리플렉터용 수지 프레임, 리플렉터, 반도체 발광 장치, 및 성형체의 제조 방법
JP5949586B2 (ja) 2013-01-31 2016-07-06 東京エレクトロン株式会社 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体
US20140227461A1 (en) 2013-02-14 2014-08-14 Dillard University Multiple Beam Pulsed Laser Deposition Of Composite Films
US8980734B2 (en) 2013-03-08 2015-03-17 Freescale Semiconductor, Inc. Gate security feature
US10573511B2 (en) 2013-03-13 2020-02-25 Asm Ip Holding B.V. Methods for forming silicon nitride thin films
TWI625424B (zh) 2013-03-13 2018-06-01 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9159558B2 (en) 2013-03-15 2015-10-13 International Business Machines Corporation Methods of reducing defects in directed self-assembled structures
US20140273290A1 (en) 2013-03-15 2014-09-18 Tokyo Electron Limited Solvent anneal processing for directed-self assembly applications
US9209014B2 (en) 2013-03-15 2015-12-08 Tokyo Electron Limited Multi-step bake apparatus and method for directed self-assembly lithography control
JP2014188656A (ja) 2013-03-28 2014-10-06 Tokyo Electron Ltd 中空構造体の製造方法
US9552979B2 (en) 2013-05-31 2017-01-24 Asm Ip Holding B.V. Cyclic aluminum nitride deposition in a batch reactor
JP5605464B2 (ja) 2013-06-25 2014-10-15 東京エレクトロン株式会社 成膜装置及びそのクリーニング方法
CN110323268B (zh) 2013-06-28 2023-01-03 英特尔公司 基于选择性外延生长的iii-v族材料的器件
JP2015012179A (ja) 2013-06-28 2015-01-19 住友電気工業株式会社 気相成長方法
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
TW201509799A (zh) 2013-07-19 2015-03-16 Air Liquide 用於ａｌｄ／ｃｖｄ含矽薄膜應用之六配位含矽前驅物
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
JP6111171B2 (ja) 2013-09-02 2017-04-05 東京エレクトロン株式会社 成膜方法及び成膜装置
MX381754B (es) 2013-09-20 2025-03-13 Baker Hughes Inc Materiales compuestos para uso en operaciones de estimulación y control de arena.
KR102138719B1 (ko) 2013-09-27 2020-07-28 인텔 코포레이션 인접한 영역들 위로의 층들의 침범을 제한하는 것을 포함한 선택적 화학 반응에 의한 작은 영역들 위에서의 재료 층들의 형성
US9385033B2 (en) 2013-09-27 2016-07-05 Intel Corporation Method of forming a metal from a cobalt metal precursor
US9067958B2 (en) 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US20150118863A1 (en) 2013-10-25 2015-04-30 Lam Research Corporation Methods and apparatus for forming flowable dielectric films having low porosity
JP2015111563A (ja) 2013-11-06 2015-06-18 Ｄｏｗａエレクトロニクス株式会社 銅粒子分散液およびそれを用いた導電膜の製造方法
JP6135475B2 (ja) 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
TW201525173A (zh) 2013-12-09 2015-07-01 應用材料股份有限公司 選擇性層沉積之方法
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
MY182653A (en) 2013-12-19 2021-01-27 Intel Corp Self-aligned gate edge and local interconnect and method to fabricate same
US9455150B2 (en) 2013-12-24 2016-09-27 Intel Corporation Conformal thin film deposition of electropositive metal alloy films
US9873940B2 (en) 2013-12-31 2018-01-23 Lam Research Corporation Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
US9487864B2 (en) 2014-01-15 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Metal capping process and processing platform thereof
US9895715B2 (en) * 2014-02-04 2018-02-20 Asm Ip Holding B.V. Selective deposition of metals, metal oxides, and dielectrics
TWI624515B (zh) 2014-02-10 2018-05-21 國立清華大學 無機－有機複合氧化物聚合體及其製備方法
JP6254459B2 (ja) 2014-02-27 2017-12-27 東京エレクトロン株式会社 重合膜の耐薬品性改善方法、重合膜の成膜方法、成膜装置、および電子製品の製造方法
EP2918701A1 (en) 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
US20150275355A1 (en) 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
US9932671B2 (en) 2014-03-27 2018-04-03 Intel Corporation Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)
US9853107B2 (en) 2014-03-28 2017-12-26 Intel Corporation Selective epitaxially grown III-V materials based devices
US10047435B2 (en) * 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
JP5886381B2 (ja) 2014-07-23 2016-03-16 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
KR20160031903A (ko) 2014-09-15 2016-03-23 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US9396958B2 (en) 2014-10-14 2016-07-19 Tokyo Electron Limited Self-aligned patterning using directed self-assembly of block copolymers
US9281212B1 (en) 2014-10-17 2016-03-08 International Business Machines Corporation Dielectric tone inversion materials
EP3026055A1 (en) 2014-11-28 2016-06-01 Umicore AG & Co. KG New metal N-aminoguanidinate complexes for use in thin film fabrication and catalysis
US10062564B2 (en) 2014-12-15 2018-08-28 Tokyo Electron Limited Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
US11021630B2 (en) 2014-12-30 2021-06-01 Rohm And Haas Electronic Materials Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
KR102185458B1 (ko) * 2015-02-03 2020-12-03 에이에스엠 아이피 홀딩 비.브이. 선택적 퇴적
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US9613831B2 (en) * 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9805914B2 (en) 2015-04-03 2017-10-31 Applied Materials, Inc. Methods for removing contamination from surfaces in substrate processing systems
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US9978866B2 (en) 2015-04-22 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
KR102579784B1 (ko) * 2015-05-01 2023-09-15 어플라이드 머티어리얼스, 인코포레이티드 표면 블록 화학작용을 이용한 박막 유전체의 선택적 증착
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
WO2016204772A1 (en) * 2015-06-18 2016-12-22 Intel Corporation Inherently selective precursors for deposition of second or third row transition metal thin films
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
TWD175767S (zh) 2015-08-14 2016-05-21 正新橡膠工業股份有限公司 輪胎（２２８）
US20170051405A1 (en) 2015-08-18 2017-02-23 Asm Ip Holding B.V. Method for forming sin or sicn film in trenches by peald
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10343186B2 (en) * 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
US20170107413A1 (en) 2015-10-19 2017-04-20 Liang Wang Anti-icing composition driven by catalytic hydrogen generation under subzero temperatures
US10316406B2 (en) 2015-10-21 2019-06-11 Ultratech, Inc. Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9349687B1 (en) 2015-12-19 2016-05-24 International Business Machines Corporation Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
WO2017184357A1 (en) 2016-04-18 2017-10-26 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
US20170298503A1 (en) * 2016-04-18 2017-10-19 Asm Ip Holding B.V. Combined anneal and selective deposition systems
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10171919B2 (en) 2016-05-16 2019-01-01 The Regents Of The University Of Colorado, A Body Corporate Thermal and thermoacoustic nanodevices and methods of making and using same
US10453701B2 (en) * 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US9805974B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Selective deposition of metallic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US10014212B2 (en) * 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US10612137B2 (en) * 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9972695B2 (en) 2016-08-04 2018-05-15 International Business Machines Corporation Binary metal oxide based interlayer for high mobility channels
WO2018063815A1 (en) 2016-10-02 2018-04-05 Applied Materials, Inc. Doped selective metal caps to improve copper electromigration with ruthenium liner
US10358719B2 (en) 2016-11-23 2019-07-23 Applied Materials, Inc. Selective deposition of aluminum oxide on metal surfaces
US11430656B2 (en) * 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10504723B2 (en) 2017-01-05 2019-12-10 Applied Materials, Inc. Method and apparatus for selective epitaxy
TWI739984B (zh) * 2017-01-31 2021-09-21 美商應用材料股份有限公司 就圖案化應用進行選擇性沉積之方案
US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
US9911595B1 (en) 2017-03-17 2018-03-06 Lam Research Corporation Selective growth of silicon nitride
JP6832776B2 (ja) * 2017-03-30 2021-02-24 東京エレクトロン株式会社 選択成長方法
KR102627238B1 (ko) 2017-05-05 2024-01-19 에이에스엠 아이피 홀딩 비.브이. 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
JP7183187B2 (ja) * 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ
US10900120B2 (en) * 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
US10763108B2 (en) 2017-08-18 2020-09-01 Lam Research Corporation Geometrically selective deposition of a dielectric film
US10283710B2 (en) 2017-09-05 2019-05-07 Sandisk Technologies Llc Resistive random access memory device containing replacement word lines and method of making thereof
KR101822577B1 (ko) 2017-10-31 2018-03-08 나정균 분리배출이 용이한 친환경 아이스팩
US10586734B2 (en) 2017-11-20 2020-03-10 Tokyo Electron Limited Method of selective film deposition for forming fully self-aligned vias
JP7146690B2 (ja) * 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． 堆積および除去を使用した選択的層形成
US12482648B2 (en) * 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
JP2020056104A (ja) * 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US11965238B2 (en) * 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US20200347493A1 (en) * 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
US11450529B2 (en) * 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
TWI865747B (zh) * 2020-03-30 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TWI862807B (zh) * 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) * 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102027776B1 (ko) * 2018-09-04 2019-11-04 전북대학교산학협력단 무한 선택비를 갖는 원자층증착법을 이용한 패턴의 제조 방법
KR20210043745A (ko) * 2018-09-14 2021-04-21 어플라이드 머티어리얼스, 인코포레이티드 선택적 산화알루미늄 막 증착
KR20200108243A (ko) * 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20220113328A (ko) * 2019-03-18 2022-08-12 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
KR20220058634A (ko) * 2019-09-24 2022-05-09 도쿄엘렉트론가부시키가이샤 성막 방법
KR20220058636A (ko) * 2019-09-24 2022-05-09 도쿄엘렉트론가부시키가이샤 성막 방법
US12540387B2 (en) * 2020-03-30 2026-02-03 Asm Ip Holding B.V. Simultaneous selective deposition of two different materials on two different surfaces
KR20230150367A (ko) * 2021-03-09 2023-10-30 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
WO2024117887A1 (ko) * 2022-11-30 2024-06-06 주식회사 동진쎄미켐 절연막 패턴 형성 방법 및 반도체 소자
WO2024263543A1 (en) * 2023-06-19 2024-12-26 Applied Materials, Inc. Selective liner deposition for via resistance reduction
WO2025135449A1 (ko) * 2023-12-18 2025-06-26 주식회사 원익아이피에스 기판 처리 방법

Also Published As

Publication number Publication date
JP2023182796A (ja) 2023-12-26
KR20240060762A (ko) 2024-05-08
TW201835367A (zh) 2018-10-01
TW202240002A (zh) 2022-10-16
KR20250123732A (ko) 2025-08-18
KR102841716B1 (ko) 2025-08-01
US20210358739A1 (en) 2021-11-18
US20250069885A1 (en) 2025-02-27
US20180233350A1 (en) 2018-08-16
JP7373636B2 (ja) 2023-11-02
TWI798112B (zh) 2023-04-01
TWI859743B (zh) 2024-10-21
US12170197B2 (en) 2024-12-17
TWI794209B (zh) 2023-03-01
US11094535B2 (en) 2021-08-17
JP2018137435A (ja) 2018-08-30
JP7169072B2 (ja) 2022-11-10
JP2023011755A (ja) 2023-01-24
TW202328474A (zh) 2023-07-16

Similar Documents

Publication Publication Date Title
KR102841716B1 (ko) 선택적 패시베이션 및 선택적 증착
US12322593B2 (en) Selective passivation and selective deposition
US12300505B2 (en) Deposition of organic films
US20260060014A1 (en) Selective passivation and selective deposition
KR20230019044A (ko) 선택적 패시베이션 및 선택적 증착

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

X601 Decision of rejection after re-examination
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000