KR20050062665A - 노광장치 및 디바이스 제조방법 - Google Patents

노광장치 및 디바이스 제조방법 Download PDF

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Publication number
KR20050062665A
KR20050062665A KR1020057009676A KR20057009676A KR20050062665A KR 20050062665 A KR20050062665 A KR 20050062665A KR 1020057009676 A KR1020057009676 A KR 1020057009676A KR 20057009676 A KR20057009676 A KR 20057009676A KR 20050062665 A KR20050062665 A KR 20050062665A
Authority
KR
South Korea
Prior art keywords
substrate
liquid
recovery
recovery device
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020057009676A
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English (en)
Korean (ko)
Inventor
마사히로 네이
나오유키 고바야시
다이 아라이
소이치 오와
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20050062665A publication Critical patent/KR20050062665A/ko
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020057009676A 2002-12-10 2003-12-08 노광장치 및 디바이스 제조방법 Abandoned KR20050062665A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00357958 2002-12-10
JP2002357958 2002-12-10
JPJP-P-2003-00296491 2003-08-20
JP2003296491 2003-08-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127029007A Division KR20120127755A (ko) 2002-12-10 2003-12-08 노광장치 및 디바이스 제조방법

Publications (1)

Publication Number Publication Date
KR20050062665A true KR20050062665A (ko) 2005-06-23

Family

ID=32510636

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020057009676A Abandoned KR20050062665A (ko) 2002-12-10 2003-12-08 노광장치 및 디바이스 제조방법
KR1020127029007A Ceased KR20120127755A (ko) 2002-12-10 2003-12-08 노광장치 및 디바이스 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127029007A Ceased KR20120127755A (ko) 2002-12-10 2003-12-08 노광장치 및 디바이스 제조방법

Country Status (9)

Country Link
US (3) US20050219488A1 (enExample)
EP (1) EP1571695A4 (enExample)
JP (1) JP4596077B2 (enExample)
KR (2) KR20050062665A (enExample)
CN (2) CN101852993A (enExample)
AU (1) AU2003289236A1 (enExample)
SG (3) SG158745A1 (enExample)
TW (1) TW200425268A (enExample)
WO (1) WO2004053953A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101135673B1 (ko) * 2008-12-11 2012-04-20 에이에스엠엘 네델란즈 비.브이. 유체 추출 시스템, 리소그래피 장치 및 디바이스 제조 방법
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus

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CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
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US7589820B2 (en) 2009-09-15
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US8089611B2 (en) 2012-01-03
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SG150388A1 (en) 2009-03-30
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CN101852993A (zh) 2010-10-06
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US20050219488A1 (en) 2005-10-06
US20090180089A1 (en) 2009-07-16

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