JP4596077B2 - 真空システム、液浸露光装置及び露光方法、デバイス製造方法 - Google Patents

真空システム、液浸露光装置及び露光方法、デバイス製造方法 Download PDF

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Publication number
JP4596077B2
JP4596077B2 JP2009035503A JP2009035503A JP4596077B2 JP 4596077 B2 JP4596077 B2 JP 4596077B2 JP 2009035503 A JP2009035503 A JP 2009035503A JP 2009035503 A JP2009035503 A JP 2009035503A JP 4596077 B2 JP4596077 B2 JP 4596077B2
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Prior art keywords
liquid
substrate
recovery
tank
exposure
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Expired - Fee Related
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Japanese (ja)
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JP2009105472A (ja
Inventor
正洋 根井
直行 小林
大 荒井
壮一 大和
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009035503A 2002-12-10 2009-02-18 真空システム、液浸露光装置及び露光方法、デバイス製造方法 Expired - Fee Related JP4596077B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009035503A JP4596077B2 (ja) 2002-12-10 2009-02-18 真空システム、液浸露光装置及び露光方法、デバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002357958 2002-12-10
JP2003296491 2003-08-20
JP2009035503A JP4596077B2 (ja) 2002-12-10 2009-02-18 真空システム、液浸露光装置及び露光方法、デバイス製造方法

Related Parent Applications (1)

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JP2003412584A Division JP4529433B2 (ja) 2002-12-10 2003-12-10 露光装置及び露光方法、デバイス製造方法

Publications (2)

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JP2009105472A JP2009105472A (ja) 2009-05-14
JP4596077B2 true JP4596077B2 (ja) 2010-12-08

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Country Status (9)

Country Link
US (3) US20050219488A1 (enExample)
EP (1) EP1571695A4 (enExample)
JP (1) JP4596077B2 (enExample)
KR (2) KR20120127755A (enExample)
CN (2) CN101852993A (enExample)
AU (1) AU2003289236A1 (enExample)
SG (3) SG158745A1 (enExample)
TW (1) TW200425268A (enExample)
WO (1) WO2004053953A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014017533A (ja) * 2003-07-09 2014-01-30 Nikon Corp 露光装置、及びデバイス製造方法

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