TW200425268A - Exposure device and manufacturing method for device - Google Patents

Exposure device and manufacturing method for device Download PDF

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Publication number
TW200425268A
TW200425268A TW092134803A TW92134803A TW200425268A TW 200425268 A TW200425268 A TW 200425268A TW 092134803 A TW092134803 A TW 092134803A TW 92134803 A TW92134803 A TW 92134803A TW 200425268 A TW200425268 A TW 200425268A
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Taiwan
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substrate
liquid
recovery
exposure
patent application
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TW092134803A
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Chinese (zh)
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TWI334160B (en
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Masahiro Nei
Naoyuki Kobayashi
Dai Arai
Soichi Owa
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Nikon Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides an exposure device, which can transfer the pattern in good precision and also eliminate the environmental variance even the liquid flows out from the substrate during using immersion method for the exposure processing; in which, the exposure device is filled with liquid 50 on partial imaging surface of the projected optical system PL; projecting the pattern on the substrate P through the liquid 50 and the projected optical system PL; thus, exposing the substrate. The present invention includes a recycling device 20 to recycle the liquid 50 flowing out from the substrate P.

Description

200425268 玖、發明說明: 【發明所屬之技術領域】 本發明’為關於在投影光學系統PL之像面側巧A卩地充 滿液體之狀態下,以投影光學系統投影之圖案像來進行曝 光之曝光裝置,以及使用此曝光裝置之元件製造方法。 【先前技術】 半導體元件及液晶顯示元件,係使用將光罩上形成之 圖案轉印至感光性基板上之所謂的微影法來加以製造。此 微影製程中所使用之曝光裝置,具有支持光罩之光罩載台 與支持基板之基板載台,一邊逐次移動光罩載台及基板載 台、一邊透過投影光學系統將光罩圖案轉印至基板。近年 來,為因應元件圖案更進一步之高積體化,皆要求投影光 學糸統具有更南的解像度。投影光學系統之解像度,隨著 所使用之曝光波長越短、投影光學系統之孔徑數越大而越 高。因此,隨著積體電路之微細化,投影曝光裝置所使用 之曝光波長亦年年短波長化,且投影光學系統之孔徑數亦 增大。目前,雖仍以krF準分子雷射248nm之曝光波長為 主流’但波長更短之ArF準分子雷射之193nm亦曰漸實用 化。又,在進行曝光時,與解像度同樣的,焦深(D0F)亦非 常重要。解像度R及焦深δ分別以下式定義。 R= kl · λ/ΝΑ (1) δ= 士k2 · λ/ΝΑ2 (2) 此處,λ係曝光波長、ΝΑ係投影光學系統之孔徑數、 200425268 kl,k2係製程系數。根據式(1)、式(2)可知,為提高解像 度R,而縮短曝光波長λ、加大孔徑數να時,焦深δ將變窄 〇 若焦深變得過窄的話,欲將基板表面對齊投影光學系 統之像面將會非常困難,而有曝光動作時限界(margin)不 足之虞。因此,作為一種實質上縮短曝光波長且使焦深廣 之方法,例如於國際公開第99/ 49504號中提出了 一種浸 沒法。此浸沒法,係將投影光學系統之下面與晶圓表面之 間’以水、或有機溶媒等液體加以充滿,利用曝光用光在 液體中之波長為空氣中之1 / n倍(n係液體之折射率,一 般為1.2〜1.6左右)之特性,來提昇解像度且將焦深擴大 至約η倍的方法。 然而,在上述先前技術中,仍存在有下述之問題。上 述先前技術,係在投影光學系統像面側之下面與基板(晶 圓)之間局部地充滿液體,在使基板中央附近之曝光照射 區域曝光時不會有液體流出至基板外側之情況產生。然而 ,如圖14之示意圖所示,將基板ρ之周邊區域(邊緣區域 )Ε移動到投影光學系統之投影區域ι〇〇,欲進行此基板ρ 之邊緣區域之曝光時’亦體會流出至基板ρ之外側。若將 此流出之液體放置不管的話,將會造成基板ρ所處環境(濕 度等)之變動,而引起干涉儀之光程上(用來測量保持基板 ρ之基板載台位置資訊)及各種光學檢測裝置之檢測用光之 光程上的折射率產生變化,而有可能無法得到期望之圖案 轉印精度。此外,亦會因流出之液體,導致用來保持基板 200425268 旦土板σ周邊之機械零件等產生鏽料問題。雖然亦可考 ^對基板Ρ之周邊區域Ε進行曝光以避免液體流出,但 :對周邊區i或Ε施以曝光處理來形成圖案的話,在後續 ^例如CMP(化學機械*研磨)處玉里中,對於CMP裝置之 研磨面,晶圓基板P之部分區域會有無法良好研磨之問題 產生。再者,若流出之液體侵入真空系統(吸氣系統)之管 内的居冑可月匕使作為真空源之真空系破損、或故障。 【發明内容】 本發明有鑑於此,其目的係提供一種在投影光學系統 與基板之間充滿液體進行曝光處理時,能以良好精度轉印 圖案之曝光裝置、曝光方法以及使用此曝光裝置之元件製 造方法。 為解決上述課題,本發明係使用實施形態所示之對應 圖1〜圖13之構成。但各要件之括弧符號僅為該要素之例 示’並沒有限定各要素之意。 根據本發明第一實施形態之曝光裝置(EX),係透過液 體(50)將圖案像轉印至基板(P)上以使基板曝光,其特徵在 於,具備: 投影光學系統(PL),係將圖案像投影至基板;以及 回收裝置(20),係用來回收流出至該基板外側之液體 若根據此發明,即使液體流出至基板外測,此流出之 液體不會被放置而會被回收裝置回收。因此,可以抑制基 200425268 板所處環境之變動,且能抑制用來保持基板之基板台周邊 之機械零件產生鏽蝕等不良狀況,而能良好精度將圖案轉 印至基板,製造具有高圖案精度之元件。 根據本發明第二實施形態之曝光裝置(Εχ),係透過液 體(50)將圖案像轉印至基板(Ρ)上以使基板曝光,其特在於 ,具備: 投影光學系統(PL),係將圖案像投影至基板·· 液體供應裝置(1 )’係從該基板上方供應液體;以及 回收裝置(2),係回收該液體供應裝置(1)所供應之液 體; 該回收裝置,不從該基板上方回收液體。 若根據本發明,即使不從基板上方亦可以進行液體之 回收(吸引)。因此,可以防止在基板曝光中產生聲音及震 動。此外’由於流至基板外側之液體被回收裝置所收回, 故可防止基板所處環境之變動以及機械零件之鏽蝕等之產 生。因此’可在基板上以良好精度形成圖案,製造具有高 圖案精度之元件。 根據本發明第三實施形態之曝光裝置(Εχ),係透過液 體(50)將圖案像轉印至基板(ρ)上以使基板曝光,其特徵在 於,具備: 投影光學系統(PL),係將圖案像投影至基板; 吸氣系統(24,32,33),係具有吸氣口;以及 回收裝置,係回收從該吸氣口吸引之液體。 若根據本發明,例如即使液體流出而流入吸氣系統之 200425268 吸氣口 ’此液體亦會被回收,而防止液體侵入作為吸氣源 之真空源。因此,即使進行浸沒曝光,亦能保證吸氣系統 之功能’確實地以高精度之圖案來使基板曝光而製造元件 〇 根據本發明第四實施形態之一種曝光裝置,係透過液 體(50)將圖案像轉印至基板(p)上以使基板曝光,其特徵在 於,具備: 投影光學系統(PL),係將圖案像投影至基板; 基板載台(PST),係保持該基板;以及 回收裝置(20),其至少一部分係設於該基板台,以進 打液體之回收。本發明之曝光裝置,可以防止基板所處環 境之變動以及機械零件之鏽蝕等之發生。 根據本發明第五實施形態之曝光方法,係透過液體將 圖案像轉印至基板上以使基板曝光,其特徵在於,包含·· 從基板上方將液體供應至該投影光學系統與該基板之 間的步驟; 將該供應之液體,從基板外側且較基板低之位置加以 回收的步驟;以及 在進行該液體之供應及回收期間,進行該基板之曝光 的步驟。 本I月之曝光方法,由於在進行浸沒曝光時,係從基 板上方供應液體,且在基板 你丞攸1示符位置之下方回收液體,因 此在基板曝光中可有效防止產生聲音與震動。 本發明,進一步提供使用上述第1〜第4之任一實施 200425268 形態之曝光裝置(EX)之元件製造方法。 【實施方式】 以下,參考圖式說明本發明之曝光裝置以及元件製造 方法,但本發明並不限定於此。圖1為本發明之曝光裝置 之一實施形態的概略構成圖。 《第1實施形態》200425268 发明 、 Explanation of the invention: [Technical field to which the invention belongs] The present invention relates to the exposure of a pattern image projected by the projection optical system in a state where the image surface side of the projection optical system PL is filled with liquid in a state of liquid. Device and method for manufacturing element using the exposure device. [Prior Art] Semiconductor devices and liquid crystal display devices are manufactured using a so-called lithography method in which a pattern formed on a photomask is transferred onto a photosensitive substrate. The exposure device used in this lithography process has a mask supporting stage and a substrate supporting stage. While the mask stage and the substrate stage are sequentially moved, the mask pattern is transferred through the projection optical system. Printed to substrate. In recent years, in order to respond to the further accumulation of element patterns, the projection optical system has been required to have a more southern resolution. The resolution of the projection optical system is higher as the exposure wavelength used is shorter and the aperture number of the projection optical system is larger. Therefore, with the miniaturization of the integrated circuit, the exposure wavelength used by the projection exposure device becomes shorter every year, and the number of apertures of the projection optical system also increases. At present, although the exposure wavelength of 248nm of krF excimer laser is still the mainstream ', the shorter wavelength of 193nm of ArF excimer laser is becoming practical. Also, when performing exposure, the depth of focus (D0F) is very important as well as the resolution. The resolution R and the focal depth δ are defined by the following formulas, respectively. R = kl · λ / ΝΑ (1) δ = ± k2 · λ / ΝΑ2 (2) Here, λ is the exposure wavelength, NA is the number of apertures of the projection optical system, 200425268 kl, and k2 is the process coefficient. According to equations (1) and (2), in order to improve the resolution R, when the exposure wavelength λ is shortened and the aperture number να is increased, the depth of focus δ will be narrowed. If the depth of focus becomes too narrow, the surface of the substrate is intended to be narrowed. Aligning the image plane of the projection optical system will be very difficult, and there is a risk that the exposure operation margin will be insufficient. Therefore, as a method of substantially shortening the exposure wavelength and widening the focal depth, for example, an immersion method is proposed in International Publication No. 99/49504. This immersion method is to fill the space between the lower surface of the projection optical system and the surface of the wafer with liquid such as water or organic solvent. The wavelength of the light in the liquid by exposure is 1 / n times that of air (n series liquid (The refractive index is generally about 1.2 to 1.6)) to improve the resolution and expand the focal depth to about η times. However, in the aforementioned prior art, the following problems still exist. The above-mentioned prior art is partially filled with liquid between the lower surface of the image plane side of the projection optical system and the substrate (crystal circle), and no liquid will flow out of the substrate when the exposure area near the center of the substrate is exposed. However, as shown in the schematic diagram of FIG. 14, the peripheral region (edge region) E of the substrate ρ is moved to the projection region ιo of the projection optical system, and when the exposure of the edge region of the substrate ρ is performed, it also flows out to the substrate. ρ Outside. Leaving the outflowing liquid unattended will cause changes in the environment (humidity, etc.) of the substrate ρ, and cause the optical path of the interferometer (used to measure the position information of the substrate stage holding the substrate ρ) and various optical The refractive index in the optical path of the detection light of the detection device changes, and the desired pattern transfer accuracy may not be obtained. In addition, due to the outflow of liquid, rust problems will occur on mechanical parts used to hold the substrate 200425268 and the surrounding soil σ. Although it can also be considered to expose the peripheral region E of the substrate P to avoid liquid outflow, if the peripheral region i or E is subjected to an exposure process to form a pattern, it will be used in subsequent processes such as CMP (Chemical Mechanical * Grinding). For the polishing surface of the CMP device, a problem that a part of the wafer substrate P cannot be polished well may occur. Furthermore, if the outflowing liquid intrudes into the tube of the vacuum system (suction system), the vacuum system as a vacuum source may be damaged or malfunctioned. [Summary of the Invention] The present invention has been made in view of this, and an object thereof is to provide an exposure device capable of transferring a pattern with good accuracy, an exposure method, and an element using the exposure device when the projection optical system and the substrate are filled with liquid for exposure processing. Production method. In order to solve the above problems, the present invention uses the configurations shown in Figs. 1 to 13 corresponding to the embodiments. However, the bracket symbol of each element is merely an example of the element 'and does not limit the elements. According to an exposure apparatus (EX) according to a first embodiment of the present invention, a pattern image is transferred to a substrate (P) through a liquid (50) to expose the substrate, and is characterized by comprising: a projection optical system (PL); The pattern image is projected on the substrate; and the recovery device (20) is used to recover the liquid flowing out of the substrate. According to the invention, even if the liquid flows out of the substrate, the liquid flowing out will not be placed and will be recovered. Device recycling. Therefore, it is possible to suppress the change of the environment of the base 200425268 board, and to suppress the occurrence of rust and other undesirable conditions of the mechanical parts around the substrate stage used to hold the substrate. element. According to an exposure device (E ×) of the second embodiment of the present invention, a pattern image is transferred to a substrate (P) through a liquid (50) to expose the substrate, and particularly includes: a projection optical system (PL); Projecting a pattern image onto a substrate · The liquid supply device (1) 'is for supplying liquid from above the substrate; and a recovery device (2) is for recovering the liquid supplied by the liquid supply device (1); Liquid is recovered above the substrate. According to the present invention, the liquid can be recovered (suctioned) without going from above the substrate. Therefore, it is possible to prevent sound and vibration from being generated during substrate exposure. In addition, since the liquid flowing to the outside of the substrate is recovered by the recovery device, it is possible to prevent a change in the environment in which the substrate is located and the occurrence of corrosion of mechanical parts. Therefore, a pattern can be formed on the substrate with good accuracy, and a device having high pattern accuracy can be manufactured. According to an exposure device (E ×) of a third embodiment of the present invention, a pattern image is transferred to a substrate (ρ) through a liquid (50) to expose the substrate, and is characterized by comprising: a projection optical system (PL); The pattern image is projected onto the substrate; the suction system (24, 32, 33) has a suction port; and a recovery device recovers a liquid sucked from the suction port. According to the present invention, for example, even if the liquid flows out and flows into the suction port of the suction system 200425268, the liquid will be recovered to prevent the liquid from entering the vacuum source as the suction source. Therefore, even if the immersion exposure is performed, the function of the getter system can be ensured. "The substrate is accurately exposed with a high-precision pattern to manufacture the element. An exposure device according to the fourth embodiment of the present invention is a liquid (50) through The pattern image is transferred onto the substrate (p) to expose the substrate, and is characterized by: a projection optical system (PL) for projecting the pattern image onto the substrate; a substrate stage (PST) for holding the substrate; and recycling At least a part of the device (20) is arranged on the substrate table to recover the liquid. The exposure device of the present invention can prevent changes in the environment in which the substrate is located and corrosion of mechanical parts. According to the exposure method of the fifth embodiment of the present invention, a pattern image is transferred to a substrate through a liquid to expose the substrate, and is characterized by including: supplying liquid between the projection optical system and the substrate from above the substrate. A step of recovering the supplied liquid from outside the substrate and lower than the substrate; and a step of exposing the substrate during the supply and recovery of the liquid. The exposure method of this month, because the liquid is supplied from above the substrate during the immersion exposure, and the liquid is recovered below the position of the indicator on the substrate, so the sound and vibration can be effectively prevented during substrate exposure. The present invention further provides a device manufacturing method using the exposure apparatus (EX) in the form of any of the first to fourth implementations of 200425268. [Embodiment] Hereinafter, an exposure apparatus and a device manufacturing method of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. Fig. 1 is a schematic configuration diagram of an embodiment of an exposure apparatus of the present invention. "First Embodiment"

圖1中,曝光裝置本體EX,具備:支持光罩Μ之光罩 載台MST,支持基板ρ的基板載台PST,以曝光用光EL照 射被光罩載台MST所支持之光罩μ的照明光學系統IL,將 以曝光用光EL照明之光罩μ之圖案像投影至被基板載台 PST所支持之基板ρ上的投影光學系統pL,以及統籌控制 曝光裝置ΕΧ全體之動作的控制裝置c〇NT。 此處’本實施形態,係以使用掃描型曝光裝置(所謂之In FIG. 1, the exposure apparatus main body EX includes: a mask stage MST supporting the mask M, and a substrate stage PST supporting the substrate ρ. The mask μ supported by the mask stage MST is irradiated with the exposure light EL. Illumination optical system IL, a projection optical system pL for projecting a pattern image of a mask μ illuminated with exposure light EL onto a substrate ρ supported by a substrate stage PST, and a control device for overall control of the operation of the entire exposure device EX c〇NT. Here, in this embodiment, a scanning exposure device (a so-called

掃柄步進器)之情形為例來進行說明,此型之曝光裝置, 係-邊使光罩Μ與基板ρ於掃描方向以彼此不同之面向(反 ^同步移動,一邊將光罩Μ上所形成之圖案曝光至基Sweep handle stepper) is taken as an example to explain. This type of exposure device is to make the photomask M and the substrate ρ face different from each other in the scanning direction. The formed pattern is exposed to the base

Pm說明中’係於水平面内取光罩Μ與基板ρ之同 移動:向(掃描方向)為χ軸方向、於水平面内取與X軸 向正交之方向為γ軸方向(非掃 方向)、取與χ軸及Υ4 方向垂直且與投影光學系統PL之 軸方a + & 忐軸ΑΧ —致的方向為 季由方向。此外,取繞χ軸、γ軸、 向、以 及Ζ軸方向分別為 及…方向。又,此處所指之「基板」包《 在半導體晶圓上塗布光阻者,所謂之「光罩」則包=_; 12 200425268 形成欲縮小投影至基板上之元件圖案的標線片。In the description of Pm, 'the photomask M and the substrate ρ are moved in the horizontal plane: the (scanning direction) is the χ-axis direction, and the direction orthogonal to the X-axis in the horizontal plane is the γ-axis direction (non-scanning direction). Take the direction perpendicular to the χ axis and the Υ4 direction and the axis a + & 忐 axis AX of the projection optical system PL as the quarterly direction. In addition, the directions around the χ-axis, γ-axis, direction, and Z-axis are respectively the and... Directions. In addition, the "substrate" package here refers to those who apply a photoresist on a semiconductor wafer, and the so-called "photomask" package = _; 12 200425268 Forms a reticle for reducing the element pattern projected onto the substrate.

照明光學系統IL,係用來以曝光用光EL照明被光罩 載口 MST所支持之光罩M,具有:曝光用光源,用以使曝 光用光源所射出之光束照度均勻化之光學積分器,用以將 來自光予積分盗之曝光用光EL加以聚光之聚光透鏡,中繼 透鏡系統’及可變視野光闌(用來將曝光用光EL照射於光 罩Μ上之照明區域設定成狹縫狀)等。光罩M上之既定照明 區域,係使用照明光學系統IL以照度分佈均勻之曝光用光 EL來加以照明。從照明光學系統IL射出之曝光用光EL, 例如係使用從水銀燈射出之紫外線帶之亮線(2線、h線、i 線)以及KrF準分子雷射光(波長248nm)等之遠紫外光(DUV 光)ArF準分子雷射光(波長193nm)及匕雷射光(波長 157nm)等之真空紫外光等。本實施形態,係使用準分 子雷射光。 光罩載台MST係用來支持光罩μ,能在與投影光學系 統PL之光軸ΑΧ垂直的平面内,亦即能在χγ平面内進行2 維移動及0 Ζ方向之微小旋轉。光罩載台MST係以線性4 · 達等之光罩載台驅動裝置MSTD來加以驅動。光罩載台MST 上光罩Μ之2維方向位置、及旋轉角,係以雷射干涉儀即 乂測里 測里結果被送至控制裝置C0NT。控制裝置 c〇nt,根據雷射干涉儀之測量結果來驅動光罩載台驅動裝 置MSTD,據以進行光罩載台MST所支持之光罩μ之定位。 投影光學系統PL,係以既定投影倍率β將光罩μ之圖 案投影曝光至基板Ρ,以複數個光學元件(透鏡)構成,此 13 200425268 等光學元件係以金屬構件之鏡筒PK來加以支持。本實施形 態中’投影倍率β係例如1 / 4或1 / 5之縮小系統。又,投 影光學系統PL可以是等倍系統或放大系統任一者,或使用 反射鏡來構成亦可。此外,在本實施形態之投影光學系統 PL前端側(基板Ρ側),光學元件(透鏡)6〇係從鏡筒ρκ露 出。此光學元件60係以能裝卸(更換)之方式設於鏡筒ρκ 〇 基板載台PST係用來支持基板Ρ,具備··透過基板保 持具來保持基板ρ之Ζ載台51,用以支持Ζ載台之ΧΥ載 台52,以及用以保持χγ載台52之基座53。基板載台psT 係以線性馬達等之基板載台驅動裝置PSTD加以驅動。基板 載台驅動裝置PSTD係以控制裝置C0NT加以控制。藉驅動 Z載台51,來控制z載台51所保持之基板ρ在z方向之位 置(焦點位置)、以及0X, 方向之位置。此外,藉驅動 XY載台52,來控制基板ρ在XY方向之位置(與投影光學系 統PL像面實質上平行方向之位置)。亦即,z載台51,係 控制基板P之焦點位置及傾斜角,以自動對焦方式及自動 調平方式將基板P之表面對齊投影光學系統PL之像面,χγ 載口 52,則係進行基板ρ之X軸方向及γ軸方向的定位。 此外’當然也可將Ζ載台與ΧΥ載台設置成一體。 基板載台PST(Z載台51)上’設有與基板載台psT 一 起相對投影光學系統PL移動之移動鏡54。又,在移動鏡 54之對向位置設有雷射干涉儀55。基板載台PST上基板p 之2維方向位置及旋轉角,係以雷射干涉儀55即時加以測 200425268 :’測量結果輸出至控制裝置⑽T。控制系統⑽τ根據 雷射干涉儀55之測量結果驅動基板载台驅動襞置psTD, 來進行基板載台PST所支持之基板p的定位。 本實施形態,為實質上縮短曝光波長以提昇解像度, 且為了實質上獲得較廣之焦。采,而採用了浸沒法。因此, 至少在將光罩Μ之圖案像轉印至基板p上之期間,係將基 板Ρ表面與投影光學系統PL之基板側光學元件(透鏡 之前端面(下面)7之間,以既定液體5〇加以充滿。如前所 述,從投影光學系統PL前端側露出透鏡6〇,液體5〇僅接 觸透鏡60。據此,得以防止由金屬製成之鏡筒ρκ的腐蝕 本貫施形態中’液體5 0係使用純水。純水,不僅能使 ArF雷射光穿透,例如在使用從水銀燈射出之紫外線帶亮 線(g線、h線、i線)及KrF準分子雷射光(波長248nm)等 遠紫外線(DUV光)來作為曝光用光el時,亦能使此曝光用 光EL穿透。 曝光裝置EX’具備液體供應裝置1與液體回收裝置2 ’其中,液體供應裝置1係用來將既定之液體50供應至投 影光學系統P L前端面(透鏡6 〇之前端面)7與基板p間之 空間5 6,液體回收裝置2則係用來回收空5 6之液體5 0。 液體供應裝置1 ’係用來將液體50充滿於投影光學系統pl 與基板P間之至少一部分,具備收納液體50之容器、加壓 泵、以及溫度调整裝置(用以調整供應至空間5 6之液體5 0 的溫度)等。於液體供應裝置1連接供應管3之一端,於供 應管3之另一端則連接了供應嘴4。液體供應裝置1係透 15 200425268 過供應管3及供應嘴4,將液體50供應至空間56。 液體回收裝置2,具備吸引泉、及用來儲存所回收之 液體50的容器等。於液體回收裝置2連接回收管6之一端 ’於回收管6之另-端則連接了回收嘴液體回收裝置= 係透過回收管6及回收嘴5,來回收空間56之液體M。欲 將液體50充滿於空㈤56時,控制裝置c〇NT即驅動液體供 應,置卜透過供應管3及供應嘴4 ’對空Fb1 56供應每時 間皁位既定量之液體50’並驅動液體回收裝置2,透過回 收管6及回收嘴5從空間56回收每單位時間既定量之液體 50。據此,在投影光學系統PL前端面7與基板p間之空間 56保持液體50’而形成浸沒部分。此處,控制裝置二Ντ ,係藉由對液體供應裝置i之控制而能任意設定對空間Μ 之每單位時間的液體供應量,藉由對液體回收裝置2之控 制而能任意設定每單位時間從基板p上回收液體之量。二 圖2,係顯示曝光裝置Εχ之投影光學系統pL下部、 液體供應裝置1、及液體回收裝置2等之圖丨的部分放大 圖。圖2中,投影光學系統PL最下端之透鏡6〇,其前端 部60A係在掃描方向留下所需部分,形成為於γ方向'(非掃 描方向)細長之矩形。於掃描曝光時,光罩Μ之部分圖案像 被投影於前端部60Α正下方之矩形投影區域,相對於投影 光學系統PL,光罩Μ係於一X方向(或+ χ方向)以速度1 移動,基板Ρ則與此同步,透過χγ載台52於+ 乂方向(或 —X方向)以速度β· ν(β係投影倍率)移動❶在對一個曝光 照射區域之曝光結束後,藉由基板Ρ之步進移動將下一個 16 200425268 曝光ik射區域移動至掃描開始位置,之後即以步進掃打方 式依序進行對各曝光照射區域之曝光。本實施形態_,液 體50之流動方向,係設定成沿基板p之移動方向、與基板 P之移動方向之同一方向。 圖3,係顯示投影光學系統pL之透鏡6〇前端部μα、 往X軸方向供應液體50之供應嘴4(4A〜4C)、與用以回收 液體50之回收嘴5(5A,5幻之位置關係的圖。圖3中,透 鏡60之前端部60A之形狀,係於γ軸方向細長之矩形,以 在X軸方向挾著投影光學系統PL之透鏡6〇之前端部_ 的方式,在+ X方向側配置有3個供應嘴4A〜4C,在—X 方向側配置有2個回收嘴,5Α,5Ββ又,供應嘴Μ〜代係 透過供應管3連接於液體供應裝置卜回收嘴5A,5b則係 透過回收管4連接於液體回收裝置2。又,在將供應嘴ο 〜4C與回收嘴5A,5B相對前端部6〇a中心旋轉大致副 度之位置’配置有供應嘴8A〜8C及回收嘴9A,9b。此處 ’:=4A〜4C與回收嘴9A,9B係於Y轴方向交互排列 ,:::8A〜8C與回收嘴5A,5B係於γ軸方向 ,=—系透過供應管1。連接於液體供應裝置; 9A,9B則係透過回收管11連接於液體回收裝置 为、如圖4所 侧分別配置供…3 ": 在方向兩 夏供應嘴13,14及回收嘴15 ★ 嘴及回收喈 1 + i 馮lb,16。精由此供應 向H 步進移動時基板描方向(y轴方 時,亦能在投影光學系統PL與基板P之間安定地 17 供應液體50。 端::之ΪΓ部形狀並沒有特別限定,例如可以就前 兩對嘴部來進行液體5°之供應或回收 此外,為了能在+ χ方向 # . ^ a 门次疋―X方向之任一方向進行液 體5 0之供應及回收,因卜 寻仏應鳴與回收嘴上下排列配置 亦可0 接著,參照圖5及圖6’說明用以回收流出至基板p 外側之回收裝置2〇的一實 # ^ ρςτ^ . ^ 也形怨。圖5為Ζ載台51(基板 載』了)之立體圖’圖6為主要部位之放大剖面圖。 7 *圖6中,回收裝置2G具備液體回收構件21, 圍51上配置在保持具部57所保持之基板ρ周 圍。=吸收構件21係具有既定寬度之環狀構件,配置在 。上形成為環狀之槽部23中 内部,形成有連續於槽部23之产 戟。51 疋々丨l路22,配置在槽部23之 液體吸收構件21之底部連接於狄 低冲運接於流路22。液體吸收構件21 ’例如可以由多孔曾喻咨楚 孔貝陶是4之多孔性材料所構成。或者, =吸收構件21之形成材料亦可以為多孔性㈣的海綿。 =夕孔性材料所形成之液體吸收構件21可保持既定量之液 體。 在Ζ載台51上,在液體吸收構件21與由保持具部57 所保持之基板ρ之間,設有頊邾姑^ 狀輔助板部Μ,其以既定寬 度包圍基板Ρ之外周。輔助板部 | Dy之表面南度,係被設定 成與Z載“〗之保持具部57所料之基板p之表面高度 大致-致。猎由此輔助板部59’即使基板P之周邊區域( 18 200425268 邊緣區域)E位於投影光學系統pl之透鏡6〇之下方护,、 能在投影光學系統PL之透鏡6G與基板p之間持續:持^ 體50。此外,以既定寬度包圍此辅助板部59外周之液體 吸收構件21,具有在作為第2回收裝置之液體回收裝置2 無法完全回收時,吸收(回收)流出至輔助板部59外側之液 體50的功能。 保持具部57,係在Z載台51上形成為與基板p大致 相同大小之圓形凹部中,設置用來支持基板p背面之複數 個突出部58所構成者。此等突出部58上,分別配置有用 來吸附基板P之吸附孔24。又,吸附孔24係分別連接於 形成在Z載台51内部之流路25…卜,在保持具部57(圓 形凹邛)之最外周附近形成有複數個液體回收孔4 6。此等 液體回收孔46,與連接至液體吸收構件21之流路22相連 接。此外,亦可以設置與連接至液體吸收構件21(槽部23) 之流路22不同的流路,連接於液體回收孔46。 分別連接至液體吸收構件21及液體回收孔46之流路 22,係連接於設在z載台51外部之管路26之一端部。另 一方面,管路26之另一端,係透過設置在Z載台51外部 之第1槽(tank)27及閥28,連接吸引裝置之泵29。連接 於吸附孔24之流路25,係連接於設在z載台51外部之管 路30之一端。另一方面,管路3〇之另一端,係透過設在 Z載台51外部之第2槽31及閥32,連接於吸引裝置之泵 33。液體回收構件21與液體回收孔46,係將流出至基板p 外側之液體及周圍之氣體(空氣)一起回收。又,流到基板 200425268 P背面側之液體,係與周圍之氣體f处 札體(工乳)一起由吸附孔24 加以回收。該等液體回收方法, ,^ ^ 嬉#谩敘。由液體吸收構 件21、液體回收孔4 6及吸附$ 9 /1私r~> l 附孔24所回收之液體(水)會與 氣體(空氣)加以分離,並分別暫時儲存於第ι槽2?與第2 槽3卜藉由此液體氣體之分離,而可防止液體流入作為真 空源之真空泵29,33,防止真空泵29,33之損毀。第i、 第2槽27,31分別設有排出流路2?a,3U,使用水位感 知器等’當液體儲存既定量時,即從排出流路27a,3u加 以排出。 此外,亦可設置與連接至液體吸收構件21 (槽部23)之 流路22(槽27、閥28、真空幫浦29)不同的流路,將其連 接於液體回收孔46。又,圖5中,在Z載台51之+X側端 邛,设有延伸於Y軸方向之移動鏡54χ,在γ側部設有延 伸於X軸方向之移動鏡54γ。雷射干涉儀將雷射光照射在 該等移動鏡54Χ,54Υ來檢測基板載台PST之χ軸方向與γ 軸方向之位置。 接著’說明使用上述曝光裝置ΕΧ將光罩Μ之圖案曝光 至基板Ρ上的順序。 將光罩Μ襄載於光罩載台mst、且將基板Ρ裝載於基 板載台PST後’控制裝置CONT即驅動液體供應裝置1及液 體回收裝置2 ’在空間56形成液體5〇之浸沒部分(參照圖 1) °然後’控制裝置CONT,使用照明光學系統IL以曝光 用光EL來照明光罩Μ,將光罩Μ之圖案像透過投影光學系 統pL及液體50投影至基板ρ。此時,在使基板ρ中央附 近之曝光照射區域曝光之期間 液體50係以液體回收裝置2加 板P之外側。 ,由液體供應裝置丨供應之 以回收,因此不會流出至基 另一方面,如圖B杯- 行瞧光不,因對基板P之邊緣區域E進 灯曝尤處理,而使投影氺風 好W p M PL與基板p間之浸沒部分 位於基板P之邊緣區域F t 附近雖能以輔助板部59將液 體持績保持在投影光㈣統^與基板p之間,若液體5〇Illumination optical system IL is used to illuminate the mask M supported by the mask carrier MST with the exposure light EL. It has an exposure light source and an optical integrator for uniformizing the illuminance of the light beam emitted by the exposure light source. Condensing lens, relay lens system 'and variable field diaphragm (for illuminating the exposure area EL on the illuminating area on the mask M for condensing the exposure light EL from the light to the integral thief Set in slit shape) and so on. The predetermined illumination area on the mask M is illuminated by the illumination optical system IL with exposure light EL having a uniform illumination distribution. The exposure light EL emitted from the illumination optical system IL is, for example, far-ultraviolet light (2 lines, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) such as ultraviolet rays (e.g., ultraviolet rays) emitted from a mercury lamp. DUV light) Vacuum ultraviolet light such as ArF excimer laser light (wavelength 193nm) and dagger laser light (wavelength 157nm). This embodiment uses excimer laser light. The photomask stage MST is used to support the photomask μ, and it can perform 2-dimensional movement and small rotations in the 0Z direction in a plane perpendicular to the optical axis AX of the projection optical system PL. The reticle stage MST is driven by a linear reticle stage drive device MSTD. The two-dimensional position and rotation angle of the photomask M on the photomask stage MST are measured by a laser interferometer, and the results are sent to the control unit CONT. The control device c nt drives the photomask stage driving device MSTD according to the measurement result of the laser interferometer, thereby positioning the photomask μ supported by the photomask stage MST. The projection optical system PL is used to project and expose the pattern of the mask μ to the substrate P at a predetermined projection magnification β, and is composed of a plurality of optical elements (lenses). This 2004 25268 and other optical elements are supported by a metal tube PK . In this embodiment, the 'projection magnification β is a reduction system such as 1/4 or 1/4. The projection optical system PL may be any of an equal magnification system and a magnification system, or may be configured using a mirror. In addition, on the front end side (substrate P side) of the projection optical system PL of this embodiment, the optical element (lens) 60 is exposed from the lens barrel ρκ. This optical element 60 is provided on the lens barrel ρκ in a manner capable of being detached (replaced). The substrate stage PST is used to support the substrate P, and is provided with a Z-stage 51 for holding the substrate ρ through the substrate holder to support The XY stage 52 of the Z stage, and the base 53 for holding the X stage 52. The substrate stage pST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage driving device PSTD is controlled by a control device CONT. The Z stage 51 is driven to control the position (focus position) of the substrate ρ held by the z stage 51 in the z direction and the position of the 0X, direction. In addition, the position of the substrate ρ in the XY direction (position substantially parallel to the image plane of the projection optical system PL) is controlled by driving the XY stage 52. That is, the z-stage 51 controls the focus position and tilt angle of the substrate P, and aligns the surface of the substrate P with the image plane of the projection optical system PL by the autofocus method and the auto-leveling method. Positioning of the substrate ρ in the X-axis direction and the γ-axis direction. In addition, of course, the Z stage and the X stage may be integrated. The substrate stage PST (Z stage 51) is provided with a moving mirror 54 which moves relative to the projection optical system PL together with the substrate stage pST. A laser interferometer 55 is provided at a position facing the moving mirror 54. The two-dimensional position and rotation angle of the substrate p on the substrate stage PST are measured by the laser interferometer 55 in real time. 200425268: 'The measurement result is output to the control device ⑽T. The control system ⑽τ drives the substrate stage drive to set psTD according to the measurement result of the laser interferometer 55 to perform positioning of the substrate p supported by the substrate stage PST. In this embodiment, the exposure wavelength is substantially shortened to improve the resolution, and in order to substantially obtain a wider focus. Mining, and the immersion method was used. Therefore, at least while the pattern image of the photomask M is being transferred to the substrate p, the surface P of the substrate P and the substrate-side optical element (front end surface (lower surface) 7 of the lens) 7 of the projection optical system PL are filled with a predetermined liquid 5 〇 is filled. As described above, the lens 60 is exposed from the front end side of the projection optical system PL, and the liquid 50 only contacts the lens 60. Accordingly, the corrosion of the lens barrel ρκ made of metal can be prevented in this embodiment. Liquid 50 uses pure water. Pure water can not only penetrate ArF laser light. For example, when using ultraviolet band bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248nm) emitted from mercury lamps. ), Such as far-ultraviolet light (DUV light), as the exposure light el, the exposure light EL can be penetrated. The exposure device EX 'is provided with a liquid supply device 1 and a liquid recovery device 2', of which the liquid supply device 1 is used The predetermined liquid 50 is supplied to the space 5 6 between the front end surface of the projection optical system PL (the front end surface of the lens 60) 7 and the substrate p, and the liquid recovery device 2 is used to recover the empty 50 6 liquid 50. Liquid supply Device 1 'is used to The body 50 fills at least a portion between the projection optical system pl and the substrate P, and includes a container for storing the liquid 50, a pressure pump, and a temperature adjusting device (for adjusting the temperature of the liquid 50 supplied to the space 56). The liquid supply device 1 is connected to one end of the supply pipe 3, and the other end of the supply pipe 3 is connected to the supply nozzle 4. The liquid supply device 1 is connected through the supply pipe 3 and the supply nozzle 4 to supply liquid 50 to the space 56. The liquid recovery device 2 includes a suction spring and a container for storing the recovered liquid 50. The liquid recovery device 2 is connected to one end of the recovery tube 6 and the other end of the recovery tube 6 is connected to a recovery nozzle liquid recovery device. = The liquid M in the space 56 is recovered through the recovery pipe 6 and the recovery nozzle 5. When the liquid 50 is to be filled in the space 56, the control device cONT will drive the liquid supply, and the transmission through the supply pipe 3 and the supply nozzle 4 ' The air Fb1 56 supplies a predetermined amount of liquid 50 ′ per time and drives the liquid recovery device 2 to recover the predetermined amount of liquid 50 per unit time from the space 56 through the recovery pipe 6 and the recovery nozzle 5. According to this, in the projection optical system Before PL The space 56 between the surface 7 and the substrate p holds the liquid 50 'to form an immersed portion. Here, the control device 2 Nτ can arbitrarily set the liquid supply per unit time to the space M by controlling the liquid supply device i. The amount of liquid recovered from the substrate p per unit time can be arbitrarily set by controlling the liquid recovery device 2. The second figure 2 shows the lower part of the projection optical system pL of the exposure device Ex, the liquid supply device 1, and the liquid. A partially enlarged view of the drawing of the recycling device 2 and the like. In FIG. 2, the lens 60 of the lowermost end of the projection optical system PL has a front end portion 60A that leaves a required portion in the scanning direction and is formed in the γ direction (non-scanning). Direction) slender rectangle. During the scanning exposure, a part of the pattern image of the mask M is projected on a rectangular projection area directly below the front end portion 60A. The mask M is moved in an X direction (or + χ direction) at a speed of 1 relative to the projection optical system PL. The substrate P is synchronized with this and moves through the χγ stage 52 in the + 乂 direction (or -X direction) at a speed β · ν (β-based projection magnification). After the exposure to an exposure irradiation area is completed, the substrate P The stepping movement of P moves the next 16 200425268 exposure ik shot area to the scanning start position, and then sequentially exposes each exposure irradiation area in a step-and-scan manner. In the present embodiment, the flow direction of the liquid 50 is set in the same direction as the moving direction of the substrate p and the moving direction of the substrate P. FIG. 3 shows the lens μ of the projection optical system pL, the front end μα, the supply nozzle 4 (4A to 4C) for supplying the liquid 50 to the X-axis direction, and the recovery nozzle 5 (5A, 5 for the magic of the liquid 50). The positional relationship diagram. In FIG. 3, the shape of the front end portion 60A of the lens 60 is a slender rectangle in the γ-axis direction, and the front end portion of the lens 60 of the projection optical system PL is held in the X-axis direction. Three supply nozzles 4A ~ 4C are arranged on the + X direction side, and two recovery nozzles are arranged on the -X direction side, 5A, 5Bβ, and the supply nozzles M ~ are connected to the liquid supply device through the supply pipe 3 and the recovery nozzle 5A. 5b is connected to the liquid recovery device 2 through the recovery pipe 4. In addition, the supply nozzle 8A ~ is disposed at a position where the supply nozzles ο to 4C and the recovery nozzles 5A and 5B are rotated approximately by a degree relative to the center of the front end portion 60a. 8C and recovery nozzles 9A, 9b. Here ': = 4A ~ 4C and recovery nozzles 9A, 9B are arranged alternately in the Y-axis direction, ::: 8A-8C and recovery nozzles 5A, 5B are in the γ-axis direction, = — It is through the supply pipe 1. It is connected to the liquid supply device; 9A, 9B are connected to the liquid recovery device through the recovery pipe 11 as shown in the figure. 4 sides are provided for ... 3 ": In the direction of the two summer supply nozzles 13, 14 and the recovery nozzle 15 ★ nozzles and recovery 喈 1 + i Feng lb, 16. The precise direction of this supply is to move the substrate in the direction of step H (On the y-axis side, the liquid 50 can be stably supplied 17 between the projection optical system PL and the substrate P. End: The shape of the ΪΓ part is not particularly limited. For example, the liquid can be 5 ° for the first two pairs of mouths. Supply or recovery In addition, in order to be able to supply and recover liquid 50 in + χ direction #. ^ A door times 门-X direction, it is also possible to arrange the top and bottom of the recovery nozzle in order to arrange the 0. Next, referring to FIG. 5 and FIG. 6 ′, a real # ^ ρςτ ^. ^ Which is used to recover the recovery device 20 that flows out of the substrate p is described. FIG. 5 is a view of the Z stage 51 (on the substrate). A perspective view 'FIG. 6 is an enlarged sectional view of a main part. 7 * In FIG. 6, the recovery device 2G includes a liquid recovery member 21, and the periphery 51 is disposed around the substrate ρ held by the holder portion 57. = The absorption member 21 has a predetermined structure. A ring-shaped member having a width is arranged on the inside of the groove portion 23 formed in a ring shape. There is a halberd that is continuous with the groove portion 23. 51 疋 々 路 22, the bottom of the liquid absorbing member 21 disposed in the groove portion 23 is connected to Dilow and connected to the flow channel 22. The liquid absorbing member 21 ′ can be formed by, for example, Porous Zeng Yuchu Kong Beitao is composed of a porous material of 4. Or, = the forming material of the absorbing member 21 can also be a porous sponge. = The liquid absorbing member 21 formed of a porous material can maintain a predetermined value. On the Z-stage 51, between the liquid absorbing member 21 and the substrate ρ held by the holder portion 57, a 顼 邾 -shaped auxiliary plate portion M is provided, which surrounds the substrate P with a predetermined width. The periphery. Auxiliary plate portion | The south degree of the surface of Dy is set to be approximately the same as the surface height of the substrate p expected by the holder portion 57 of the “Z”. The auxiliary plate portion 59 ′ even the peripheral area of the substrate P (18 200425268 edge area) E is located below the lens 60 of the projection optical system pl, and can continue between the lens 6G of the projection optical system PL and the substrate p: the body 50. In addition, this auxiliary is surrounded by a predetermined width The liquid absorbing member 21 on the outer periphery of the plate portion 59 has a function of absorbing (recovering) the liquid 50 flowing out of the auxiliary plate portion 59 when the liquid recovery device 2 as the second recovery device cannot be completely recovered. The Z stage 51 is formed by a plurality of circular recesses formed to have substantially the same size as the substrate p, and is provided with a plurality of protruding portions 58 for supporting the back surface of the substrate p. These protruding portions 58 are respectively provided for adsorbing the substrate. The suction holes 24 of P. The suction holes 24 are respectively connected to the flow paths 25 ... formed in the Z stage 51, and a plurality of liquid recovery are formed near the outermost periphery of the holder portion 57 (circular recess). Hole 4 6. This liquid returns The receiving hole 46 is connected to the flow path 22 connected to the liquid absorption member 21. In addition, a flow path different from the flow path 22 connected to the liquid absorption member 21 (the groove portion 23) may be provided and connected to the liquid recovery hole 46. The flow path 22 respectively connected to the liquid absorbing member 21 and the liquid recovery hole 46 is connected to one end of a pipe 26 provided outside the z stage 51. On the other hand, the other end of the pipe 26 is provided through The first tank 27 and valve 28 outside the Z stage 51 are connected to the pump 29 of the suction device. The flow path 25 connected to the suction hole 24 is connected to the pipe 30 provided outside the z stage 51 On the other hand, the other end of the pipeline 30 is connected to the pump 33 of the suction device through the second groove 31 and the valve 32 provided outside the Z stage 51. The liquid recovery member 21 and the liquid recovery hole 46, The liquid flowing to the outside of the substrate p and the surrounding gas (air) are recovered together. The liquid flowing to the back side of the substrate 200425268 P is collected by the adsorption hole 24 together with the surrounding body f (cold milk). Recovery. These liquid recovery methods, ^ ^ 驰 # 谩 述. BY Liquid absorption member 2 1. Liquid recovery hole 46 and adsorption $ 9/1 private r ~> l The liquid (water) recovered from the attached hole 24 will be separated from the gas (air) and stored temporarily in the 2nd tank and 2nd tank respectively. The 2 tank 3 prevents the liquid from flowing into the vacuum pumps 29 and 33 as a vacuum source and prevents the vacuum pumps 29 and 33 from being damaged by the separation of the liquid gas. The i and the second tanks 27 and 31 are respectively provided with a discharge flow path 2 ? a, 3U, using a water level sensor, etc. 'When the liquid is stored in a predetermined amount, it is discharged from the discharge flow path 27a, 3u. In addition, a flow path 22 connected to the liquid absorption member 21 (the groove portion 23) can also be provided. (Slot 27, valve 28, vacuum pump 29) are connected to the liquid recovery hole 46 with different flow paths. In Fig. 5, a moving mirror 54x extending in the Y-axis direction is provided on the + X side end 邛 of the Z stage 51, and a moving mirror 54γ extending in the X-axis direction is provided on the γ side. The laser interferometer irradiates laser light on the moving mirrors 54 ×, 54Υ to detect the positions of the x-axis direction and the γ-axis direction of the substrate stage PST. Next, the procedure of exposing the pattern of the photomask M onto the substrate P using the above-mentioned exposure device EX will be described. After the photomask M is mounted on the photomask stage mst and the substrate P is mounted on the substrate stage PST, the 'control device CONT drives the liquid supply device 1 and the liquid recovery device 2' to form an immersion portion of the liquid 50 in the space 56. (Refer to FIG. 1) ° Then, the control device CONT illuminates the mask M with the exposure light EL using the illumination optical system IL, and projects the pattern image of the mask M through the projection optical system pL and the liquid 50 onto the substrate ρ. At this time, the liquid 50 is applied to the outside of the plate P by the liquid recovery device 2 while the exposure irradiation area near the center of the substrate p is exposed. The liquid is supplied by the liquid supply device for recycling, so it will not flow out to the base. On the other hand, as shown in Figure B, the glass is not exposed, because the edge area E of the substrate P is exposed to the lamp, and the projection is caused by wind. The submerged portion between W p M PL and the substrate p is located near the edge region F t of the substrate P. Although the liquid can be maintained between the projection light system ^ and the substrate p by the auxiliary plate portion 59, if the liquid 5

之一部份流出至辅助板部59外侧時,流出之㈣Μ即被 液體吸收構件21所吸收(回收)。士 _ 祕在丨壯 ^ w ^ ;此處,控制裝置CONT開 始驅動上述液體供應裝置丨及液體回收裝置2,且開始閥 28之開放與泵29之驅動。因此,被液體吸收構件2丨回收 之液體50,即被吸引裝置之泵29吸引,與周圍之空氣透 過流路22及管路26,被吸入收集到第1槽27。When a part flows out of the auxiliary plate portion 59, the outflowed BM is absorbed (recovered) by the liquid absorbing member 21. Here, the control device CONT starts driving the above-mentioned liquid supply device 丨 and the liquid recovery device 2 and starts the opening of the valve 28 and the driving of the pump 29. Therefore, the liquid 50 recovered by the liquid absorbing member 2 is sucked by the pump 29 of the suction device, passes through the flow path 22 and the pipe 26 with the surrounding air, and is sucked and collected in the first tank 27.

又,由基板P與輔助板部59間之間隙流出之液體,則 透過設置在基板P背面側之液體回收孔4 6,與周圍之空氣 一起被吸入到流路22,透過管路26回收至第1槽27。 此外,透過基板P與輔助板部5 9間之間隙流入基板p 背面側之液體50,亦有可能流入用來吸附保持基板P之吸 附孔24。如前所述,由於吸附孔24係透過流路25、管路 30、及第2槽31連接於吸引裝置之泵33,因此,藉由閥 32之開放及泵33之驅動,將基板p吸附保持在Z載台51 上,且透過流路25及管路30將流入吸附孔24之液體50 收集至第2槽31。也就是說’用來回收流入吸附孔24内 之液體50之第3回收裝置’亦包含有流路25、管路30、 21 200425268 第2槽3卜目32、泵33,及用來驅動控制該等之控制裝 置瞻。又’此時之吸附孔24,亦具有設在基板P背面側 之液體回收孔(回收裝置)的功能。 此外,與液體回收孔46同樣的,由吸附孔24,亦流 入繞至基板P背面側之液體與基板p背面之氣體(空氣), 使其落下到第2槽3卜據以將液體(水)與氣體(空氣)分離 。藉由定期回收儲存在第2槽31之液體,防止液體流入作 為真空源之真《 33。以此方式,來防止真U Μ 壞。 惟’在進行基板P之邊緣區域E之曝光處理時,亦即 投影光學系統PL與基板P間之浸沒部分位於基板p之邊緣 附近時,如前所述’液體5()之—部分可能流出至基板^卜 側。本實施形態中’控制裝置瞻在浸沒部分位於基板p 之邊緣區域E _,係至少進行下述之—的控制,亦即控制 液體供應裝置1來增加每單位時間對空間56之液體供應 ’或控制液體回收裝置(第2回收裝置)來減低每單位時間 從空間56回收液體之时量,而即使在液體流出至基板ρ 外側時,亦能充分的將投影光學系統PL與基板ρ之間以液 體50加以充滿。此時’上述液體供應量之增加以及液體回 收量之減少的控制中’控制裝置c〇NT’可根據雷射干涉儀 之基板P位置檢測結果,來進行液體控制裝置1以及/戋 液體回收裝置2之控制’或者,在第i、第2槽27,32或 是管路26’ 30等處設置用來檢測回收(流出)液體量之檢測 裝置’根據此檢測裝置之檢測結果,來進行液體控制裝置 22 200425268 1及/或液體回收裝置2之控制。 又’本貫施#態之冑光裝^ Εχ係所謂之步進掃描方式 。因此,在使基板Ρ往箭頭Xa(參照圖3)所示之掃描方向"( 一X方向)移動來進行掃描曝光時,係使用供應管3、供應 嘴4A〜4C、回收管4、及回收嘴5A,5B,以液體供應裝= 1及液體供應裝置2進行液體50之供應及回收。亦即,在 基板P往一X方向移動時,透過供應管3及供應嘴4(乜〜 4C)從液體供應裝置1將液體5〇供應至投影光學系統凡與 基板P之間,且透過回收嘴5(5A,5B)及回收管6將液體 50回收至液體回收裝置2,使液體5〇往—X方向流動以充 滿透鏡60與基板P之間。另一方面,在使基板p往箭頭 Xb所示之掃描方向(+ χ方向)移動來進行掃描曝光時,係 使用供應管10、供應嘴8A〜8C、回收管U、及回收嘴9A 9B,以液體供應裝置1及液體供應裝置2進行液體5〇之供 應及回收。亦即,在基板p往+ X方向移動時,透過供靡 管10及供應嘴g(8A〜8C)從液體供應裝置1將液體5〇供 應至^又衫光學糸統PL與基板P之間’且透過回收嘴9 ( g a 9B)及回收管11將液體50回收至液體回收裝置2,液體5〇 往+ X方向流動以充滿透鏡60與基板P之間。如此,控制 裝置CONT,使用液體供應裝置1及液體回收裝置2,沿基 板P之移動方向注入液體5 0。此時,例如從液體供應裝置 1透過供應嘴4所供應之液體50,係隨著基板p往_ X方 向之移動而被吸入流至空間56,因此即使液體供應裝置1 之供應肖b 1小,亦能輕易的將液體50供應至空間5 6。此 23 200425268 外,視知描方向切換液體5〇之流動方向,則無論在從+ χ °或X方向之任一方向掃描基板ρ時,皆能以液體 50將透鏡6G之前端面7與基板ρ之間予以充滿,獲得高 解像度及廣的焦深。 如以上之說明,即使液體5〇流出至基板?外側,此流 出之液體50亦不會被放置而會被回收裝置2〇回收。因此 ’除能抑制基Ρ所處環境之變動,且因為能抑制用來保 持基板P之基板冑纟PST周邊之機械零件產生鏽钱等不良 狀況,因此能以良好之動將圖案轉印至基p,而製造具· 有高精度圖案之元件。 此外,在基板載台PST上設置作為回收裝置2〇之液體 吸收構件21,藉此,可以在較廣之範圍内保持(回收)液體 50。此外,透過流路將作為吸引裝置之泵29連接到液體吸 收構件21,藉此,可隨時將液體吸收構件21所吸收之液 體50排出至基板載台PST外部。因此,能更進一步地確實 抑制基板P所處環境之變動,且能抑制基板載台psT因液 體50而產生重量變動。此外,亦可以在基板曝光動作中停馨 止泵29,而將流出至基板p外側之液體5〇由液體吸收構 件21等加以保持,當基板曝光完成後,再使泵29動作來 排出液體。另一方面,亦可以不設置泵29 ,而使液體吸收 構件21所回收之液體50以本身重量垂下流入到槽27。此 外’亦可以不設置泵29、槽27、以及流路,而僅在基板載 台PST上設置液體吸收構件21,並定期地(例如每一批次) 更換吸收了液體50之液體吸收構件21。此時,基板載台 24 200425268 PST雖因液體50而產生重量變動,但可根據液體回收構件 21所回收之液體50之重量來更動載台控制參數,而可以 維持載台定位精度。 此外,由於係在真空泵29,33之前,設置用來分離液 體(水)與氣體(空氣)之槽27,31,來防止液體浸入真空泵 29,33 ’因此能防止真空泵29,33之故障與損壞。 另外,上述實施形態中之真空泵29,33,可以配置在 曝光裝置EZ内,亦可以配置在設置曝光裝置EXi工廠内 。此外,上述實施形態中,雖係在用來回收流出至基板p 外側之液體之回收裝置20之真空系統(真空泵之前)、以及 用來吸附保持基板P之真空系統中,設置用來分離液體(水 )與氣體(空氣)之槽(tank),但是用來分離液體(水)與氣體 (空氣)之機構(液體回收用槽等)之設置,並不侷限於此, 亦可以設置在與有可能液體進入之吸氣口相連接之吸氣系 統(真空系統)。例如,可以配置在氣體軸承之氣體回收系 統(吸氣系統)、用來將基板P吸附保持在基板搬送臂上之 吸氣系統中,或是配置在用來將基板保持構件吸附保持( 可裝拆)於基板載台的吸氣系統中。關於氣體軸承之氣體 回收系統(吸氣系統),例如在特開平iUMggO號公報中 有所揭不,關於用來將基板p吸附保持在基板搬送臂上之 吸氣系統,在特開平6 一 l8ll57號公報中有所揭示,關於在 用來將基板保持構件吸附保持(可裝拆)於基板載台之吸氣 系統,在特開平l0-ll 676()號公報♦有所揭示,在本案申 请國之法律許可範圍内,援用該等美國專利記載内容作為 25 200425268The liquid flowing out from the gap between the substrate P and the auxiliary plate portion 59 passes through the liquid recovery holes 46 provided on the back side of the substrate P, is sucked into the flow path 22 together with the surrounding air, and is recovered through the pipe 26 to The first slot 27. In addition, the liquid 50 flowing into the back side of the substrate p through the gap between the substrate P and the auxiliary plate portion 59 may flow into the suction hole 24 for holding and holding the substrate P. As described above, since the suction hole 24 is connected to the pump 33 of the suction device through the flow path 25, the pipe 30, and the second groove 31, the substrate p is adsorbed by the opening of the valve 32 and the driving of the pump 33. It is held on the Z stage 51, and the liquid 50 flowing into the adsorption hole 24 is collected into the second tank 31 through the flow path 25 and the pipeline 30. In other words, the "third recovery device for recovering the liquid 50 flowing into the adsorption hole 24" also includes the flow path 25, the pipeline 30, 21 200425268, the second tank 3, the head 32, the pump 33, and the drive control. These control devices are under review. The suction hole 24 at this time also functions as a liquid recovery hole (recovery device) provided on the back side of the substrate P. In addition, similar to the liquid recovery hole 46, the liquid (water) flowing around the back surface of the substrate P and the gas (air) on the back surface of the substrate p flows into the suction hole 24, and the liquid (water) is dropped into the second tank 3. ) Separated from gas (air). By periodically recovering the liquid stored in the second tank 31, the liquid is prevented from flowing into the truth as a vacuum source (33). In this way, the true U M is prevented. However, during the exposure processing of the edge region E of the substrate P, that is, when the immersion portion between the projection optical system PL and the substrate P is located near the edge of the substrate p, as described above, a portion of the liquid 5 () may flow out To the substrate ^ Bu side. In this embodiment, 'the control device looks at the immersed part located on the edge area E_ of the substrate p, and performs at least the following control, that is, controls the liquid supply device 1 to increase the liquid supply to the space 56 per unit time' or The liquid recovery device (second recovery device) is controlled to reduce the amount of liquid recovered from the space 56 per unit time, and even when the liquid flows out of the substrate ρ, the projection optical system PL and the substrate ρ can be sufficiently separated. The liquid 50 is filled. At this time, 'the control device c0NT' under the control of the above-mentioned increase in the liquid supply amount and the decrease in the liquid recovery amount 'can perform the liquid control device 1 and / or the liquid recovery device based on the position detection result of the substrate P of the laser interferometer. Control of 2 'Or, a detection device for detecting the amount of recovered (outflowing) liquid is provided in the i, the second tank 27, 32 or the pipeline 26' 30, etc., and the liquid is carried out based on the detection result of this detection device. Control device 22 200425268 1 and / or liquid recovery device 2 Also ‘本 贯 施 # 胄 的 胄 光 装 ^ Εχ is the so-called step-and-scan method. Therefore, when the substrate P is moved to the scanning direction " (-X direction) shown by arrow Xa (refer to Fig. 3) for scanning exposure, the supply pipe 3, the supply nozzles 4A to 4C, the recovery pipe 4, and The recovery nozzles 5A, 5B supply and recover the liquid 50 with the liquid supply device = 1 and the liquid supply device 2. That is, when the substrate P is moved in the X direction, the liquid 50 is supplied from the liquid supply device 1 through the supply pipe 3 and the supply nozzle 4 (乜 ~ 4C) to the projection optical system and the substrate P, and is recovered through The nozzles 5 (5A, 5B) and the recovery pipe 6 recover the liquid 50 to the liquid recovery device 2 and cause the liquid 50 to flow in the -X direction to fill the space between the lens 60 and the substrate P. On the other hand, when the substrate p is moved in the scanning direction (+ χ direction) indicated by the arrow Xb for scanning exposure, the supply pipe 10, the supply nozzles 8A to 8C, the recovery pipe U, and the recovery nozzles 9A to 9B are used. Liquid supply device 1 and liquid supply device 2 are used to supply and recover liquid 50. That is, when the substrate p is moved in the + X direction, the liquid 50 is supplied from the liquid supply device 1 through the supply pipe 10 and the supply nozzle g (8A to 8C) between the optical system PL and the substrate P. 'And the liquid 50 is recovered to the liquid recovery device 2 through the recovery nozzle 9 (ga 9B) and the recovery pipe 11, and the liquid 50 flows in the + X direction to fill the space between the lens 60 and the substrate P. In this way, the control device CONT uses the liquid supply device 1 and the liquid recovery device 2 to inject liquid 50 in the moving direction of the substrate P. At this time, for example, the liquid 50 supplied from the liquid supply device 1 through the supply nozzle 4 is sucked into the space 56 as the substrate p moves in the _X direction, so even if the supply of the liquid supply device 1 is small, b 1 is small. It can also easily supply the liquid 50 to the space 5 6. In addition to the 2004 2004268, the direction of the flow of the liquid 50 is switched by the visual direction. When the substrate ρ is scanned from any direction of + χ ° or X direction, the front end 7 of the lens 6G and the substrate ρ can be liquid 50. Fill in between to get high resolution and wide focal depth. As explained above, even if the liquid 50 flows out to the substrate? On the outside, the liquid 50 flowing out will not be placed and will be recovered by the recovery device 20. Therefore, 'in addition to suppressing changes in the environment where the substrate P is located, and because it can suppress the occurrence of rust, such as rust and money, on the mechanical parts surrounding the substrate P and the substrate PST, the pattern can be transferred to the substrate with good motion p, while manufacturing components with high-precision patterns. In addition, the liquid absorbing member 21 as the recovery device 20 is provided on the substrate stage PST, whereby the liquid 50 can be held (recovered) over a wide range. In addition, the pump 29 as a suction device is connected to the liquid absorbing member 21 through the flow path, whereby the liquid 50 absorbed by the liquid absorbing member 21 can be discharged to the outside of the substrate stage PST at any time. Therefore, it is possible to more surely suppress the change in the environment in which the substrate P is located, and it is possible to suppress the weight change of the substrate stage pST due to the liquid 50. In addition, the pump 29 may be stopped during the substrate exposure operation, and the liquid 50 flowing out of the substrate p may be held by the liquid absorbing member 21 or the like. After the substrate exposure is completed, the pump 29 is operated to discharge the liquid. On the other hand, instead of providing the pump 29, the liquid 50 recovered by the liquid absorbing member 21 may flow down into the tank 27 at its own weight. In addition, the liquid absorbing member 21 may be provided only on the substrate stage PST without providing the pump 29, the tank 27, and the flow path, and the liquid absorbing member 21 that has absorbed the liquid 50 may be replaced periodically (for example, each batch). . At this time, although the substrate stage 24 200425268 PST has a weight change due to the liquid 50, the stage control parameters can be changed according to the weight of the liquid 50 recovered by the liquid recovery member 21 to maintain the positioning accuracy of the stage. In addition, since the tanks 27 and 31 for separating liquid (water) and gas (air) are provided before the vacuum pumps 29 and 33 to prevent liquid from entering the vacuum pumps 29 and 33 ′, the failure and damage of the vacuum pumps 29 and 33 can be prevented. . In addition, the vacuum pumps 29 and 33 in the above embodiment may be arranged in the exposure device EZ, or may be arranged in a factory where the exposure device EXi is installed. In addition, in the above embodiment, the vacuum system (before the vacuum pump) of the recovery device 20 for recovering the liquid flowing out of the substrate p and the vacuum system for adsorbing and holding the substrate P are provided to separate the liquid ( Water) and gas (air) tank (tank), but the mechanism (liquid recovery tank, etc.) used to separate liquid (water) and gas (air) is not limited to this, but can also be installed in Suction system (vacuum system) connected to the suction port where liquid may enter. For example, it can be arranged in a gas recovery system (suction system) for a gas bearing, in a suction system for adsorbing and holding the substrate P on a substrate transfer arm, or in a suction system for adsorbing and holding a substrate holding member (can be mounted (Removed) in the suction system of the substrate stage. Regarding the gas recovery system (suction system) of the gas bearing, it is disclosed in, for example, JP-A-iUMggO. As for the absorbing system for adsorbing and holding the substrate p on the substrate transfer arm, JP-A-6-1818 Japanese Patent Publication No. 10-ll 676 () discloses a suction system for suction holding (detachable) a substrate holding member on a substrate stage. The application is disclosed in this application. To the extent permitted by the laws of the United States, the content of these US patents is cited as 25 200425268

本"兒明書記載之一部份。此外,本實施形態中,雖將液體 (水)與氣體(空氣)分離之槽等之機構,適用於在基板p之 一部份區域形成浸沒區域同時進行基板p之曝光的曝光裝 置亦可適用於將基板載台在液體槽中移動之曝光裝置, 或是在基板載台上形成液體槽、並在其中保持基板之曝光 裝置。關於將基板載台在液體槽中移動之曝光裝置之構成 及曝光動作,例如在特開平6_124873號公報中有所揭示, 關於在基板載台上形成液體槽、並在其中保持基板之曝光 裝置,在特開平1 0 —3031 14號公報(美國專利5,825,043)中 有所揭不,在本案申請書國法律許可範圍内,援用該等文 獻之記載内容作為本說明書之一部份。 此外,上述實施形態中,液體吸收構件21雖係形成』 包圍基板P之周圍全體的連續環狀,但是亦可配置在基名 p關之—部份’亦可以不連續之既定間隔配置。此外: 本貫施形態中之液體吸收構件21雖形成為環狀,但其形并 可以任意地設定成例如矩形等之形狀。Part of this " Children's Book of Records. In addition, in this embodiment, although a mechanism such as a tank that separates liquid (water) from gas (air) is applicable to an exposure device that forms an immersed area in a part of the substrate p and exposes the substrate p at the same time. An exposure device that moves a substrate stage in a liquid tank, or an exposure device that forms a liquid tank on a substrate stage and holds the substrate therein. The structure and exposure operation of an exposure device that moves a substrate stage in a liquid tank are disclosed in, for example, Japanese Patent Application Laid-Open No. 6_124873, and an exposure apparatus that forms a liquid tank on a substrate stage and holds a substrate therein. It is disclosed in Japanese Patent Application Laid-Open No. 10-3031 (U.S. Patent No. 5,825,043) that, within the scope of the law of the country where the application is filed, the content of these documents is used as part of this specification. In addition, in the above-mentioned embodiment, although the liquid absorbing member 21 is formed in a continuous loop that surrounds the entire periphery of the substrate P, it may be arranged at the base name pguan-partial portion or may be arranged at a discontinuous predetermined interval. In addition, although the liquid absorbing member 21 in this embodiment is formed in a ring shape, its shape can be arbitrarily set to a shape such as a rectangle.

噴氣口之配置並不受上述實施形態所限制。又,在基板I 之曝光中’並不一定要使液體供應裝置i與液體二裝置 2並行動作,只要投影光學系統pL與基板p間之曝光光浐 充滿液體50,則可以停止任何一方,或是停止兩方之動: 如前所述,本 純水之優點在於, 實施形態之液體 5 0係以純水構成。使用 在半導體製造工廠能容易的大量取得, 26 200425268 且對基板P上之光阻及光學元件(透鏡)等沒有不良影響。 此外’純水不至於對環境造成不良影響,且由於雜質之含 量極低’因此亦可期待對基板p之表面、及對設在投影光 學系統PL前端面之光學元件表面的洗淨作用。The arrangement of the air outlets is not limited by the above embodiment. In the exposure of the substrate I, it is not necessary to cause the liquid supply device i and the liquid two device 2 to operate in parallel. As long as the exposure light between the projection optical system pL and the substrate p is filled with the liquid 50, either one can be stopped, or It is to stop the movement of both parties: As mentioned above, the advantage of this pure water is that the liquid 50 of the embodiment is composed of pure water. It can be easily obtained in large quantities in a semiconductor manufacturing plant. It has no adverse effect on the photoresist and optical elements (lenses) on the substrate P. In addition, 'pure water does not cause adverse effects on the environment, and since the content of impurities is extremely low', it is also possible to expect the cleaning effect on the surface of the substrate p and the surface of the optical element provided on the front end surface of the projection optical system PL.

又’純水(水)對波長為193nm左右之曝光用光EL的折 射率η被認為在i 47〜1· 44左右,而作為曝光用光EL之 光漁而使用ArF準分子雷射光(波長i93nm)時,在基板Ρ 上為1/n’亦即i93nm之波長經純水而成為131〜134nm 左右之短波長,能獲得高的解像度。再者,由於焦深與空 氣中相較約為η倍,亦即被放大約1. 47〜1 · 44倍左右,因 此只要能確保與在空氣中使用時相同程度之焦深即可之情 形時’能更進一步的增加投影光學系統PL之孔徑數,就此 點而言,亦能提昇解像度。Also, the refractive index η of pure water (water) on the exposure light EL having a wavelength of about 193 nm is considered to be about i 47 to 1.44, and ArF excimer laser light (wavelength is used as the light of the exposure light EL). In the case of i93nm), on the substrate P, the wavelength of 1 / n ', that is, the wavelength of i93nm is reduced to about 131 to 134nm by pure water, and high resolution can be obtained. In addition, since the depth of focus is approximately η times that in the air, that is, approximately 1.47 to 1.44 times, so long as the same depth of focus can be ensured when used in air. Time 'can further increase the aperture number of the projection optical system PL, and in this regard, it can also improve the resolution.

上述實施形態中,雖於投影光學系統PL之前端安裝有 透鏡60,但作為安裝於投影光學系統Pl前端之光學元件 ’亦可疋用來調整投影光學系統PL之光學特性,例如調整 像差(球面像差、慧形像差等)所使用之光學板。或者,亦 可疋月b使曝光用光EL穿透之平行平面板。以較透鏡便宜之 平行平面板來作為與液體50接觸之光學元件,則在曝光裝 置EX之搬送、組裝、調整時等,即使在該平行平面板附著 會使投影光學系統PL之透射率、曝光用光EL在基板p上 之照度、及照度分佈之均勻性降低的物質(例如矽系有機 物等)時,只要在供應液體50之前一刻更換該平行平面板 即可,與使用透鏡作為與液體50接觸之光學元件的情形相 27 200425268 較’具有更換成本較低之優點。亦即,由㈣光 照射而從光阻產生之飛散粒子、或液體5。中雜質等之附著 會污染與液體50接觸之光學元而、t a .^ ^ 件表面’⑽衫期更換該 先^件,但若使用便宜的平行平面板來作為此光學元件 則與透鏡相較不但更換交杜& + ^ h 成本低,且能縮短更換所 心間’抑制維修保養費用(運轉成本)的 降低。 王厓手之 又,在因液體50之流動而使投影光學系統 元件與基板Ρ間之壓力較大昧,介1 ^ &綠大時,亦可不採取更換該光學元 仟 < 構成,而堅固的固宗伞 疋先學70件以避免因該壓力而移動 〇 又’上述實施形態之液體5〇雖為水,但亦可是水以外 之液體,例如,在曝光用光EL之光源為&雷射時,由於 ::2:射不會穿透水,因此,此時作為液體5〇可使用能 2二之例如氣素系油(氣素系液體)、或全說化聚 .、()。又’作為液體50’除此以外,亦可使用曝光用 先之穿透性高且折射率盡可能的高,並且對投影光學系統 PL及基板P表面所塗之光阻安定者(例如杉木油、⑼如 oil)。 《第2實施形態》 〜接著’參考圖7說明本發明之曝光裝置Ex之其他實施 形怨。此處’於以下夕句 '以下之說明中,與上述實施形態相同或是 同1構成:分,係賦予相同符號,並簡化或省略其說明。 本實施形態之特徵部分’係取代作為回收裝置之液體吸收 28 200425268 構件21,而在基板P周圍設置液體回收槽35,以及基板載 口 PST與管路26可自由地連接、分離等點。 圖7中,回收裝置2G具備在Ζ載台51上、辅助板部 部59之周圍形成為既定寬度之液體回收槽35。此外,在 流路22之一端設有連接閥36。另一方面,在管路託之一 端,設有可與連接閥36連接、分離之連接閥37。在連接 閥36, 37為分離狀態時,流路22之端部為封閉狀離,液 胃50不會流出至載台之外部。另一方面,當連接閥%, 37為連接狀態時,流路22之端部為開路狀態,流路μ之 液體50可以流通到管路26。 在曝光處理中,連接 辦逆接阀37係分離In the above embodiment, although the lens 60 is installed at the front end of the projection optical system PL, as an optical element installed at the front end of the projection optical system P1, it can also be used to adjust the optical characteristics of the projection optical system PL, such as adjusting aberration ( Spherical aberration, coma aberration, etc.). Alternatively, it may be a parallel plane plate that penetrates the exposure light EL every month b. If a parallel plane plate that is cheaper than a lens is used as the optical element in contact with the liquid 50, the transport, assembly, adjustment, etc. of the exposure device EX, even if the parallel plane plate is attached, will cause the transmittance and exposure of the projection optical system PL. When using a light EL on the substrate p and a substance having a reduced uniformity in illumination distribution (such as a silicon-based organic substance), it is only necessary to replace the parallel plane plate immediately before the liquid 50 is supplied, and a lens is used as the liquid 50 The situation of the contacted optical components is relatively low compared to the 'replacement cost' of 20042004268. That is, the scattered particles or liquid 5 generated from the photoresist by irradiation with chirped light. The attachment of impurities and other impurities will contaminate the optical element that is in contact with the liquid 50. The surface of the ta. ^^ piece surface is replaced during the shirting period, but if an inexpensive parallel flat plate is used as this optical element, it is compared with a lens Not only the replacement cost is low, but also the replacement cost can be shortened, and the maintenance cost (operating cost) can be reduced. Wang Ya's hand, because the pressure between the projection optical system element and the substrate P is relatively large due to the flow of the liquid 50, when the green is large, it is not necessary to replace the optical element. ≪ First learn 70 solid sturdy umbrellas to avoid movement due to the pressure. The liquid 50 in the above embodiment is water, but it can also be liquid other than water. For example, the light source of the exposure light EL is &; Laser, because 2: 2: Radiation does not penetrate water, so at this time, as liquid 50, you can use gaseous oil (gaseous liquid), or all chemical polymerization. (). In addition to "as a liquid 50", it is also possible to use those that have high transparency and high refractive index before exposure, and that have a stable photoresist on the surface of the projection optical system PL and the substrate P (such as fir oil). , Such as oil). "Second Embodiment" ~ Next, another embodiment of the exposure apparatus Ex of the present invention will be described with reference to Fig. 7. Here, "in the following description, the following description is the same as the above embodiment or has the same structure: points are assigned the same reference numerals, and their descriptions are simplified or omitted. The characteristic portion of the present embodiment is a component that replaces the liquid absorbing member 28 200425268 as a recovery device, and a liquid recovery tank 35 is provided around the substrate P, and the substrate port PST and the pipeline 26 can be freely connected and separated. In Fig. 7, the recovery device 2G is provided with a liquid recovery tank 35 formed on the Z stage 51 around the auxiliary plate portion 59 and having a predetermined width. A connection valve 36 is provided at one end of the flow path 22. On the other hand, at one end of the pipe support, a connection valve 37 is provided which can be connected to and disconnected from the connection valve 36. When the connection valves 36 and 37 are in the separated state, the ends of the flow path 22 are closed and the fluid 50 does not flow out of the stage. On the other hand, when the connection valve% and 37 are in the connected state, the end of the flow path 22 is in the open state, and the liquid 50 in the flow path µ can flow to the pipe 26. During the exposure process, the connection valve 37 is disconnected.

’在曝光處理中,由於基板載台聊與管路26為分離狀邀 ,因此可以順暢地進行往掃描方向之移動(掃描移動)、虛 非掃描#向之移動(步進㈣㈣光處理中流出至基柄 p外側之液體,會流在液體回收槽35與流路22中。'In the exposure process, since the substrate stage chat and the pipeline 26 are separated, it is possible to smoothly move to the scanning direction (scanning movement), and move to the virtual non-scanning # (flowing out during stepping processing) The liquid to the outside of the base handle p flows in the liquid recovery tank 35 and the flow path 22.

曝光處理結束後,基板載台PST即移動到基板p之交 換位置(裝載(Load)、卸載(Uni〇ad)位置)。在此基板交換 位置’連接閥36,37被連接。當連接閥%,37被連接上 時,控制裝置⑽τ即將間28予以開放,且驅動泵29。藉 此,被回收至液體回收槽35(作為回收裝置)之液體5〇 於基板交換位置被排出至載台外。 又,本貫施形悲中,由於被回t % # 攸口收到液體回收槽35内之 液體50會定期地(例如每一批次) ^ 人;排出至載台外部,因此液 體回收槽35之大小(容積),例如侈 係。又疋為可以儲存與一批 29 200425268 份之流出量相當之液體量的大小。此時,縣求出既定曝 光處理基板片數(亦即一批份)與流出液體量之關係,根據 此求得之關係,設定液體回收槽35之大小。或者是根據上 述求得之關係,設定用來連接連接閥36,37之時間間隔( 亦即將液體排至載台外部等動作之時序)。 應,上述實施形態中,液體回收槽35雖係形成為包圍 基板P之周圍全體的連續環狀,但是亦可配置在基板p周 圍之一部份,亦可以不連續之既定間隔配置。此外,本實 施形態中之液體回收槽35雖形成為環狀,但其形狀可以任 意地設定成例如矩形等之形狀。再者,亦可在液體回收槽 35内配置液體吸收構件。 此外,上述各實施形態中,雖係在基板p外側設有輔 助板部59,但亦可以不設置此辅助板部59,而直 p之外周附近設置液體回收構件21與液體回收槽35。土 又,上述實施形態中,雖係採用在投影光學系統凡與 基板P之間局部的充滿液體之曝光裝置,但本發明如圖6 及圖7所示之用以回收流人吸附孔(用以吸附保持基板p) 之液體的回收機構,亦能適用於將保持有曝光對象基板之 載台在液槽中移動之浸沒曝光裝置,或適用於在載台上形 成既定深度之液體槽、力其中保持基板之浸沒曝光裝置。 如前所述’作為將保持有曝光對象基板之載台在液槽中移 動之浸沒曝光裝置的構造及曝光動作,例如已揭示於曰本 專利特開平6-124873號公報中’而作為在載台上形成既定 深度之液體槽、於其中保持基板之浸沒曝光裝置的構造及 200425268 2動作’例如已揭示於特開平i㈣3114號公報(美國專 利5, 825, 043號公報)中,。 《第3實施形態》 &amp;以下’麥照圖8〜® 10,說明回收裝置之其他實施形 態0 如圖8所示,z載台51之上面為傾斜,而用來保持基 板P之保持具部57之上面則為水平。又,液體回收槽犯 包圍保持具部57之周圍而形成。此時,液體回收槽35在 俯視下雖為環狀,但是側視時卻成為傾斜狀。也就是說, 液體回收槽35係沿著Z載台51上面之傾斜而形成。藉此 ,机出至基板P外側之液體5〇,會自然地儲存在液體回收 槽35之傾斜下部35A。當回收液體50時,因為只要回收 儲存在傾斜下部35A之液體50,因此可以容易地進行回收 動作。 如圖9(a)所示,在Z載台η之上面一部份設有液體 回收槽35。在曝光處理時,液體5〇會積在液體回收槽35 内。此外,如圖9(b)所示,積在液體回收槽35内之液體 50,係透過安裝於搬送裝置η(用來將基板P裝載於基板載 台PST、或從基板載台PST卸下)之管線38來回收。。只 有在當曝光處理結束、為了將基板載出基板載台PST而搬 送裝置Η開始處理基板載台PST時,構成吸引裝置之一部 份之管線37,才吸引積在液體回收槽35内之液體50。 《第4實施形態》 以下,說明回收裝置之另一其他實施形態。如圖 31 200425268 10(a)所示,在z載台51上面設有液體回收槽 收槽35係連接於貫通至Z載台51下面之流路39。=體3口9 中設有閥39A。此外,對應z載台51之流路3 台52以及基座53中分別形成有貫通孔之流路 * u 5 41 〇 曝光處理中,閥39A係關閉,如圖1〇(a)所示, ^ 積在液體回收槽35中《接著,當曝光處理結東時 置_將基板載台PST移動到基板交換、甘二= 39Α。如此,如圖10(b)所示,液體回收 &gt; 從體5 0在 土板父換位置,以自己本身之重量,透過流路39,Μ以及 41而排出至載台外部。此外,液體回收槽35之液體π之 回收,雖以在基板交換位置處進行者較佳,但亦可在與基 板父換位置不同之位置來進行排出作業。 《第5實施形態》 上述各實施形態中,液體供應裝置丨係透過供應嘴4 由基板Ρ上方將液體50供應至基板ρ上,且作為第回收 裝置之液體回收裝置2係透過回收嘴5由基板p上方回收 基板P上之液體5 0,藉此,在基板p上之一部份形成浸沒 區域,但如圖11所示,亦可不在基板p上方設置液體回收 裝置2(回收嘴5),而將供應到基板p上之大致所有液體 50 ’藉由設在基板載台pst上之回收裝置2〇來加以回收。 圖11中,顯示了隔著投影光學系統PL之投影區域(光學元 件60)之掃描方向(X軸方向)之兩側分別設置之供應嘴4, 8。在掃描曝光基板p而供應液體5〇時,可以根據基板p 之移動方向由供應嘴4,8中之任一供應嘴來供應液體50 32 200425268 ,亦可以由兩供應嘴4,8同時供應液體5〇。由液體供應 虞置1所供應之液體50,在基板p上會擴大,可以形成較 大的浸沒區域。此外,如圖12之立體圖所示,供應至基板 P上之液體50會流到基板P外侧,但是在基板?之周圍, 有作為回收口設置之槽部23(液體吸收構件21)之回收裝置 2〇,來將液體大致全部回收。此處,在對基板p之曝光處 理中,藉由液體供應裝置1持續地供應液體5〇到基板上使 得在基板P上形成良好之浸沒區域,且由於液體5〇之供應 而能使基板P上之液體50產生流動,因此能將新鮮(潔淨) 之液體50隨時供應到基板上,且能使基板p上之液體5〇 流至槽部23。 上述第2液體回收裝置之液體回收裝置2,係透過回 收嘴5將基板P上之液體由基板p上方使用真n统吸引 加以吸引回收,因為將液體(水)與氣體(空氣)一起回收, 因此當該液體撞到回收管6内壁時,會產生聲音以及震動 。此時’如圖11與圖12所示之實施形態般,不進行由基 板P上方吸引回收液體5〇之動作,而僅使用設在基板載台 PST上之回收凌置2〇來進行液體5〇之回收,即能防止在 基板P之曝光中產生聲音與震動。 另外’在不進行從基板P上方回收液體之本實施形態 時作為回收裳置2〇,可以使用在第2實施形態之圖7所 不之構成。圖7中’由於真空系29在基板P之曝光中不吸 引由液體回收槽35所回收之液體,因此可以抑制因為吸引 液體所伴隨之聲音與震動,而更為有效。 33 200425268 此外,如先前說明之實施形態般,裝置透過回收嘴5 由基板P上方進行液體回收之液體回收裝置2,在基板p 之曝光中,不使液體回收裝置2動作而僅以回收裝置進 行液體之回收,在基板p完成曝光之後,則併用液體回收 裝置2與回收裝置2〇來進行液體5〇之回收亦可。此時, 亦能抑制基板P之曝光中因為液體之吸引(回收)所伴隨 聲音與震動之影響。 a 又作為上述各實施形態之基板P,不僅是半導體元 件製造用之半導體晶圓,亦可適用顯示元件用之玻璃基板 、薄膜磁頭用陶瓷晶圓、或用於曝光裝置之光罩或標線片 原板(合成石英、矽晶圓)等。 作為曝光裝置EX,除可使用同步移動光罩M與基板p 來掃描曝光光罩Μ之圖案的步進掃描(step &amp; scan)方式之 掃描型曝光裝置(掃描步進器)外’亦可適用在光罩m盥基 板P靜止狀態下將光罩M之圖案予以一次性的曝光,並^ 基板p依序步進移動之步進重複(step &amp; repeat)方式之投 影曝光裝置(步進器)。此外,本發明亦能適用於在基板p 上將至少2個圖案加以部分重疊轉印之步進接合⑽&amp; stitch)方式之曝光裝置。 作為曝光裝置EX之種類,本發明並不限於將半導體元 件圖案曝光至基板P之半導體元件製造用的曝光裝置,亦 能廣泛的適用於液晶顯示元件製造用或顯示器製造用之曝 光裝置’或用以製造薄膜磁頭、攝影元件(。⑻或標線片、 光罩等的曝光裝置等。 34 200425268 又,本發明亦能適用於雙載台型之曝光裝置。關於雙 載台型曝光裝置之構造及曝光動作,例如,已揭示於曰本 專利特開平10-16漏號及㈣平2㈣伽號、特表 2000-505958號、美國專利第6 341,〇〇7號、6,權⑷號 、6,549,269號及6,59。,634號等文獻中,本案在申請國法。 令許可範圍内,援用該等美國專利之揭示作為本說明書之 一部分。 ;於基板載台PST或光罩載台脱使用線性馬達時,無 响疋知用工乳懸+型(使用空氣轴承)或磁氣懸浮型(使用羅 偷兹力或反作用)之任一種皆可。又,各載台psT、黯、, 可以是沿導軌移動之型式、或不設置導軌之無導軌型式者 皆可。使用線性馬達之例,已揭示於美國專利第 ^623’853號及第5,528 118號中’本案在申請國法令許可 犯圍内’援用該等文獻之揭示内容作為本說明書之一部分 乍為各載0 PST、MST之驅動機構,可使用將磁石2維 配f之磁石單元、與將線圈2維配置之電樞單元予以對向 1藉電磁力來驅動各載台PST、MST之平面馬達。此時,將 磁^單疋與電樞單元之任—方接觸於載台PST、MST,將磁 石單兀與電樞單元之另一方設在載台psT、MST之移動面側 即可。 加因基板載台pst之移動所產生之反作用力,可使用框 木構件將其機械性的釋放至地面,以避免傳至投影光學系 、、, 此反作用力之處理方法’例如已詳細的揭示於日本 35 200425268 專利特開平8-1 66475號(美國專利第5, 528, 1 18號)公報中 ’本案在申請國法令許可範圍内,援用該文獻之揭示内容 作為本說明書之一部分。 又’因光罩載台MST之移動所產生之反作用力,可使 用框架構件將其機械性的釋放至地面,以避免傳至投影光 學系統PL。此反作用力之處理方法,例如已詳細的揭示於 曰本專利特開平8-330224號(美國專利第5, 874, 820號)公After the exposure process is completed, the substrate stage PST is moved to the switching position (Load, UniOad) of the substrate p. At this substrate exchange position ', the connection valves 36, 37 are connected. When the connection valve%, 37 is connected, the control device ⑽τ will be opened 28 and the pump 29 will be driven. Thereby, the liquid 50 recovered to the liquid recovery tank 35 (as a recovery device) is discharged to the outside of the stage at the substrate exchange position. In addition, in the present practice, because the liquid 50 in the liquid recovery tank 35 was received by t% # periodically, such as each batch, it was discharged to the outside of the carrier, so the liquid recovery tank 35 size (volume), such as luxury. It is also the size that can store liquid equivalent to a batch of 29 200425268 parts. At this time, the county determines the relationship between the predetermined number of exposed processing substrates (that is, a batch) and the amount of liquid flowing out, and sets the size of the liquid recovery tank 35 based on the relationship obtained. Or, based on the relationship obtained above, set the time interval for connecting the connecting valves 36, 37 (that is, the timing of the action such as the liquid being discharged to the outside of the stage). In the above-mentioned embodiment, although the liquid recovery tank 35 is formed in a continuous ring shape that surrounds the entire periphery of the substrate P, it may be arranged at a part of the periphery of the substrate p or may be arranged at a discontinuous predetermined interval. In addition, although the liquid recovery tank 35 in this embodiment is formed in a ring shape, its shape can be arbitrarily set to a shape such as a rectangle. Furthermore, a liquid absorbing member may be disposed in the liquid recovery tank 35. In each of the above embodiments, although the auxiliary plate portion 59 is provided on the outside of the substrate p, the auxiliary plate portion 59 may not be provided, and the liquid recovery member 21 and the liquid recovery tank 35 may be provided near the outer periphery of the p. In addition, in the above embodiment, although a liquid-filled exposure device is partially used between the projection optical system and the substrate P, the present invention is shown in FIG. 6 and FIG. The liquid recovery mechanism that adsorbs and holds the substrate p) can also be applied to an immersion exposure device that moves the stage holding the substrate to be exposed in a liquid tank, or to form a liquid tank with a predetermined depth and force on the stage. An immersion exposure device in which a substrate is held. As described above, the structure and exposure operation of an immersion exposure device that moves a stage holding an exposure target substrate in a liquid bath is disclosed in, for example, Japanese Patent Application Laid-Open No. 6-124873. A structure of a liquid tank having a predetermined depth formed on a stage, an immersion exposure device holding a substrate therein, and a 200425268 2 operation 'are disclosed in, for example, Japanese Patent Application Laid-Open No. 3114 (U.S. Patent No. 5,825,043). "Third embodiment" &amp; The following "Mai Zhao Figures 8 to 10", another embodiment of the recovery device will be described. As shown in Fig. 8, the upper surface of the z stage 51 is inclined to hold the substrate P. The top of the portion 57 is horizontal. A liquid recovery tank is formed around the holder portion 57. At this time, although the liquid recovery tank 35 is annular in a plan view, it is inclined in a side view. That is, the liquid recovery tank 35 is formed along the inclination of the upper surface of the Z stage 51. With this, the liquid 50 discharged from the outside of the substrate P is naturally stored in the inclined lower portion 35A of the liquid recovery tank 35. When the liquid 50 is recovered, since only the liquid 50 stored in the inclined lower portion 35A is recovered, the recovery operation can be easily performed. As shown in Fig. 9 (a), a liquid recovery tank 35 is provided on a portion above the Z stage?. During the exposure process, the liquid 50 is accumulated in the liquid recovery tank 35. In addition, as shown in FIG. 9 (b), the liquid 50 accumulated in the liquid recovery tank 35 passes through the mounting device η (for loading or unloading the substrate P on the substrate stage PST or from the substrate stage PST). ) Of line 38 to recover. . Only when the exposure process is completed, and the conveying device is used to carry the substrate out of the substrate stage PST, and the substrate stage PST is started to be processed, the line 37 constituting a part of the suction device sucks the liquid accumulated in the liquid recovery tank 35 50. << Fourth Embodiment >> Hereinafter, another embodiment of the recovery device will be described. As shown in FIG. 31 200425268 10 (a), a liquid recovery tank is provided on the upper surface of the z stage 51. The receiving tank 35 is connected to the flow path 39 penetrating to the lower side of the Z stage 51. = A valve 39A is provided in port 3 of body 3. In addition, three flow paths 52 corresponding to the z-stage 51 and a flow path with through holes formed in the base 53 * u 5 41 〇 During the exposure process, the valve 39A is closed, as shown in FIG. 10 (a), ^ Stored in the liquid recovery tank 35 "Next, when the exposure process is completed, set the substrate stage PST to the substrate exchange, Ganji = 39A. In this way, as shown in Fig. 10 (b), the liquid recovery &gt; slave 50 is shifted to the position of the soil plate, and is discharged to the outside of the stage through the flow paths 39, M and 41 at its own weight. In addition, although the recovery of the liquid π in the liquid recovery tank 35 is preferably performed at the substrate exchange position, the discharge operation may be performed at a position different from the position where the substrate is changed. «Fifth Embodiment» In each of the above embodiments, the liquid supply device 丨 supplies the liquid 50 to the substrate ρ from above the substrate P through the supply nozzle 4, and the liquid recovery device 2 as the second recovery device is passed through the recovery nozzle 5 The liquid 50 on the substrate P is recovered above the substrate p, thereby forming an immersion area on a portion of the substrate p, but as shown in FIG. 11, the liquid recovery device 2 (recovery nozzle 5) may not be provided above the substrate p. And almost all the liquid 50 'supplied to the substrate p is recovered by the recovery device 20 provided on the substrate stage pst. Fig. 11 shows supply nozzles 4, 8 provided on both sides of the scanning direction (X-axis direction) of the projection area (optical element 60) of the projection optical system PL. When scanning the exposed substrate p to supply the liquid 50, the liquid can be supplied from any of the supply nozzles 4, 8 according to the moving direction of the substrate p 50 32 200425268, or the liquid can be supplied from both the supply nozzles 4, 8 at the same time. 50%. The liquid 50 supplied from the liquid supply Yuzhi 1 is enlarged on the substrate p, and a large immersion area can be formed. In addition, as shown in the perspective view of FIG. 12, the liquid 50 supplied to the substrate P flows to the outside of the substrate P, but on the substrate? In the surroundings, there is a recovery device 20 of a groove portion 23 (liquid absorbing member 21) provided as a recovery port to recover almost all of the liquid. Here, in the exposure process for the substrate p, the liquid 50 is continuously supplied to the substrate by the liquid supply device 1 so that a good immersion area is formed on the substrate P, and the substrate P can be caused by the supply of the liquid 50 The upper liquid 50 generates a flow, so that a fresh (clean) liquid 50 can be supplied to the substrate at any time, and the liquid 50 on the substrate p can flow to the groove portion 23. The liquid recovery device 2 of the above-mentioned second liquid recovery device sucks and recovers the liquid on the substrate P through the recovery nozzle 5 by using the true n-system suction above the substrate p, because the liquid (water) is recovered together with the gas (air). Therefore, when the liquid hits the inner wall of the recovery pipe 6, sound and vibration are generated. At this time, as in the embodiment shown in FIG. 11 and FIG. 12, the operation of sucking the recovered liquid 50 from above the substrate P is not performed, and only the recovery liquid 20 provided on the substrate stage PST is used to perform the liquid 5 The recovery of 〇 can prevent the sound and vibration from being generated during the exposure of the substrate P. In addition, when the present embodiment in which liquid is not recovered from above the substrate P is not used, as the recovery rack 20, a configuration other than that shown in Fig. 7 of the second embodiment can be used. In FIG. 7 ', since the vacuum system 29 does not attract the liquid recovered by the liquid recovery tank 35 during the exposure of the substrate P, it is more effective to suppress the sound and vibration accompanying the liquid suction. 33 200425268 In addition, as in the previously described embodiment, the liquid recovery device 2 that performs liquid recovery from above the substrate P through the recovery nozzle 5 does not operate the liquid recovery device 2 during the exposure of the substrate p, but only uses the recovery device. After the liquid is recovered, after the substrate p is exposed, the liquid recovery device 2 and the recovery device 20 may be used to recover the liquid 50. In this case, it is also possible to suppress the influence of sound and vibration accompanying the attraction (recovery) of the liquid during the exposure of the substrate P. a As the substrate P in each of the above embodiments, not only semiconductor wafers for semiconductor device manufacturing, but also glass substrates for display elements, ceramic wafers for thin-film magnetic heads, or photomasks or reticle used in exposure devices. Original plate (synthetic quartz, silicon wafer), etc. As the exposure device EX, in addition to a scanning type exposure device (scanning stepper) of a step &amp; scan method that scans the pattern of the exposure mask M by moving the mask M and the substrate p simultaneously. Step &amp; repeat projection exposure device (step &amp; repeat) method suitable for one-time exposure of the pattern of the photomask M under the stationary state of the photomask m and the substrate P Device). In addition, the present invention can also be applied to an exposure device of a step stitching method in which at least two patterns are partially overlapped and transferred on the substrate p. As a type of the exposure device EX, the present invention is not limited to an exposure device for manufacturing a semiconductor element that exposes a semiconductor element pattern to a substrate P, but can be widely applied to an exposure device for manufacturing a liquid crystal display element or a display. In order to manufacture a thin-film magnetic head, an exposure device such as a reticle or a reticle, a photomask, etc. 34 200425268 In addition, the present invention can also be applied to a two-stage type exposure device. Regarding the structure of the two-stage type exposure device And exposure actions, for example, have been disclosed in Japanese Patent Application Laid-open Nos. 10-16 and ㈣2 2 ㈣, No. 2000-505958, U.S. Patent Nos. 6,341,007, 6, and 6, In documents such as No. 6,549,269 and 6,59., 634, this case is under the national law of the applicant. To the extent permitted by the order, the disclosure of these US patents is used as part of this specification. When using a linear motor, you can use either a silent suspension type (using air bearings) or a magnetic suspension type (using Loosez force or reaction). Also, each stage pst, dark, can be Yes The type of guide rail movement or the type without guide rail can be used. Examples of the use of linear motors have been disclosed in U.S. Patent Nos. 623'853 and 5,528,118. 'Using the disclosure of these documents as part of this specification is a drive mechanism containing 0 PST and MST, and a magnet unit with two-dimensional magnets f and an armature unit with two-dimensional coils can be used to oppose 1 Use the electromagnetic force to drive the plane motors of each stage PST and MST. At this time, contact any of the magnetic unit and the armature unit to the stage PST and MST, and connect the magnet unit to the other unit of the armature unit. One side can be set on the moving surface side of the stage pST and MST. In addition to the reaction force generated by the movement of the substrate stage pst, it can be mechanically released to the ground using a frame wooden member to avoid transmission to the projection optics The processing method of this reaction force is disclosed in detail in, for example, Japanese 35 200425268 Patent Publication No. 8-1 66475 (U.S. Patent No. 5,528,118). This case is within the scope of the permission of the applicant country. , Referencing this The disclosed contents are provided as part of this specification. Also, 'the reaction force caused by the movement of the mask stage MST can be mechanically released to the ground using a frame member to avoid transmission to the projection optical system PL. This reaction The processing method of force is disclosed in detail in, for example, Japanese Patent Laid-Open No. 8-330224 (US Patent No. 5,874,820).

報中’本案在申請國法令許可範圍内,援用該文獻之揭示 内谷作為本說明書之一部分。 如上述般,本案實施形態之曝光裝置Εχ,係將包含本 案申請專利範圍所例舉之各構成要素的各種次系統,以 進行用以達成機械精 達成各種電氣精度之 步驟,包含各種次系 接、氣壓迴路之連接 步驟前,當然有各個 至曝光裝置之步驟結 裝置舔之各種精度。 度等受到管理的無塵 保持既定機械精度、電氣精度、光學精度之方式,加以組 裝製造。為確保上述各種精度,於此組裝之前後,對各種 光學系統進行用以達成光學精度之調《,對各種機械系統In the report, ‘this case is within the scope of the law of the applicant country, and the disclosure of the document is used as part of this specification. As mentioned above, the exposure device Eχ in the embodiment of the present case will include various sub-systems including the constituent elements exemplified in the scope of the patent application for this case to perform the steps to achieve mechanical precision and various electrical accuracy, including various sub-connections. Before the connection steps of the air pressure circuit, of course, there are various steps to the exposure device, and the accuracy of the device licks. Dust-free under the control of degree, etc. It is assembled and manufactured in a way that maintains the predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure the above-mentioned various accuracy, before and after this assembly, various optical systems are adjusted to achieve optical accuracy.

調整。各種次系統組裝至曝光裝置 統彼此間之機械連接、電氣迴路之 等。此各種次系'统組裝至曝光裝置 次系統之組裝步驟。各種次系統翻 束後’即進行綜合調整,以確保螺 又,曝光裝置的製造以在溫度及讀 室中進行較佳。 @ 圖13所經微元件之 設計步驟製作光罩(標線 半導體元件等之微元件,係如 功能、性能設計步驟201,根據此 36 200425268 片)的步驟202’製造基板(元件之基材)的步驟2〇3,使用 前述實施形態之曝光裝置EX將光罩之圖案曝光至基板的曝 光處理步驟204,元件組裝步驟(切割製程、結合製程、封 裝製程)205,檢查步驟206而製造。 若依據本發明,即使液體流出,該流出之液體亦不會 被放置而會以回收裝置加以回收。因此,可以防止因流出 液體所產生之不良狀況,製造具有高圖案精度之元件。 【圖式簡單說明】 (一)圖式部分 第1圖,係顯示本發明曝光裝置之一實施形態之概略 構成圖。 第2圖,係顯示投影光學系統之前端部與液體供應裝 置及液體回收裝置間之位置關係的圖。 第3圖,係顯示供應嘴及回收嘴之配置例的圖。 第4圖,係顯示供應嘴及回收嘴之配置例的圖。 第5圖,係顯示回收裝置之一實施形態的立體圖。 第6圖’係顯示回收裝置之一實施形態的主要部位放 大剖面圖。 第7圖,係顯示回收裝置之另一實施形態的主要部位 放大剖面圖。 第8圖,係顯示回收裝置之另一實施形態的立體圖。 第9圖,係顯示回收裝置之另一實施形態的示意剖面 圖。 37 200425268 第1 0圖,係顯示回收裝置之另一實施形態的示意剖面 圖。 第11圖,係顯示回收裝置之液體回收動作之另一實施 形態的圖。 第12圖,係顯示回收裝置之液體回收動作之另一實施 形態的圖。 第13圖,係顯示半導體元件之製程例的流程圖。 % 第14圖,係用以說明習知課題的圖。 (二)元件代表符號 1 液體供應機構 2 液體回收機構 3,10 供應管 4(4A〜4C),8A〜8C,13 供應嘴 5(5A,5B),9A,9B,15,16 回收嘴 6, 11 回收管 7 透鏡之前端面(下面) 20 回收裝置 21 液體吸收構件 22, 25 流路 23 槽部 24 吸附子L 26, 30 管路 27 第1槽 38 200425268 27A, 31A 流路 28, 32 閥 29, 33 真空泵 31 第2槽 46 液體回收孔 50 液體 51 Z載台 52 XY載台 53 基座 54 移動鏡 55 雷射干涉儀 56 空間 57 保持具部 58 突出部 59 輔助板部 60 光學元件(透鏡) 60A 透鏡之前端部 EX 曝光裝置 Μ 光罩 MST 光罩載台 MSTD 光罩載台驅動裝置 P 基板 PK 鏡筒 PL 投影光學系統Adjustment. Various sub-systems are assembled to the exposure device, including mechanical connections, electrical circuits, and so on. The various sub-systems are the steps of assembling the sub-system to the exposure device. After the various sub-systems are turned over, they are comprehensively adjusted to ensure the screw, and the exposure device is manufactured better in temperature and reading room. @ Figure 13 The design steps of the micro-components are used to fabricate photomasks (micro-components such as reticle semiconductor components, such as functional and performance design steps 201, according to this 36 200425268 pieces) step 202 'manufacturing substrates (element substrates) Step 203, using the exposure device EX of the foregoing embodiment to expose the pattern of the photomask to the substrate exposure processing step 204, the component assembly step (cutting process, bonding process, packaging process) 205, inspection step 206 and manufacturing. According to the present invention, even if the liquid flows out, the discharged liquid will not be placed and will be recovered by a recovery device. Therefore, it is possible to prevent an adverse condition caused by the outflow of liquid, and to manufacture a device having high pattern accuracy. [Brief description of the drawings] (I) Schematic part Fig. 1 is a schematic configuration diagram showing an embodiment of the exposure apparatus of the present invention. Fig. 2 is a diagram showing the positional relationship between the front end of the projection optical system and the liquid supply device and the liquid recovery device. FIG. 3 is a diagram showing an example of the arrangement of the supply nozzle and the recovery nozzle. FIG. 4 is a diagram showing an example of the arrangement of the supply nozzle and the recovery nozzle. Fig. 5 is a perspective view showing an embodiment of a recovery device. Fig. 6 'is an enlarged sectional view of a main part showing an embodiment of the recovery device. Fig. 7 is an enlarged sectional view showing a main part of another embodiment of the recovery device. Fig. 8 is a perspective view showing another embodiment of the recovery device. Fig. 9 is a schematic sectional view showing another embodiment of the recovery device. 37 200425268 Fig. 10 is a schematic sectional view showing another embodiment of the recovery device. Fig. 11 is a diagram showing another embodiment of the liquid recovery operation of the recovery device. Fig. 12 is a diagram showing another embodiment of the liquid recovery operation of the recovery device. FIG. 13 is a flowchart showing a manufacturing example of a semiconductor device. % Fig. 14 is a diagram for explaining a conventional problem. (2) Symbols of components 1 Liquid supply mechanism 2 Liquid recovery mechanism 3, 10 Supply pipes 4 (4A to 4C), 8A to 8C, 13 Supply nozzles 5 (5A, 5B), 9A, 9B, 15, 16 Recovery nozzle 6 , 11 Recovery tube 7 Front end face of lens (lower side) 20 Recovery device 21 Liquid absorbing member 22, 25 Flow path 23 Slot part 24 Adsorber L 26, 30 Line 27 First slot 38 200425268 27A, 31A Flow path 28, 32 Valve 29, 33 Vacuum pump 31 Second tank 46 Liquid recovery hole 50 Liquid 51 Z stage 52 XY stage 53 Base 54 Moving mirror 55 Laser interferometer 56 Space 57 Holder portion 58 Projection portion 59 Auxiliary plate portion 60 Optical element ( Lens) 60A lens front end EX exposure device M mask MST mask stage MSTD mask stage drive P substrate PK lens barrel PL projection optical system

39 200425268 PST 基板載台 PSTD 基板載台驅動裝置39 200425268 PST substrate stage PSTD substrate stage drive

4040

Claims (1)

200425268 拾、申請專利範圍: 1 · 一種曝光裝置,係透過液體將圖案像轉印至基板上 以使基板曝光,其特徵在於,具備: 投影光學系統,係將圖案像投影至基板;以及 回收裝置,係用來回收流出至該基板外側之液體。 2·如申請專利範圍第丨項之曝光裝置,其具備保持該 基板之基板載台,該回收裝置,係具有設在該基板載台之 回收部。 3 ·如申請專利範圍第2項之曝光裝置,其中,該回收 裝置之回收部,係配置在設於該基板載台之基板保持部之 周圍的至少一部分。 4 ·如申請專利範圍第2項之曝光裝置,其中,該回收 裝置之回收部,係包含配置在該基板載台之液體吸收構件 〇 5 ·如申請專利範圍第4項之曝光裝置,其中,該 吸收構件包含多孔質構件。 體 6 ·如申請專利範圍第2項之曝光裝置,其中,該回收 之回收部’係包含配置在該基板載台之液體回收槽。 7 ·如申請專利範圍第2項之曝光裝置,其中,該回收 义置之回收部’係包含配置在該基板載台之回收孔。 8 ·如申請專利範圍第2項之曝光裝置,其中,該回收 装置係回收流至該基板載台所保持之該基板背面側 體。 叩夜 9 ·如申請專利範圍第2項之曝光裝置,其中,該回 收 200425268 /置二在/基板載台到達基板交換位置時,將該回收部 回收之液體排出。 10·如中請專利範圍帛2項之曝光裝置,其具備用來 吸引,亥回收波置之回收部所回收之液體的吸引裝置。 11_如中請專利範圍帛2項之曝光裝置,其具備用來 收术。亥回收裝置之回收部所回收之液體的容器。 12 ·如申請專利範圍帛1項之曝光裝置,其具備將液 體供應至”亥杈影光學系統與該基板之間的供應裝置,當Μ 才又〜光子系、、4與4基板間之浸沒部分位於該基板周緣附㉛· 時,該供應裝置即增加液體之供應量。 13如申睛專利範圍第i項之曝光裝置,其具備用來 回收该基板上液體之第2回收裝置,當該投影光學系統與 该基板間之浸沒部分位於該基板之周緣附近時,該第2回 收裝置即減少液體之回收量。 14 ·如申請專利範圍第1項之曝光裝置,其中,保持 口亥基板之基板載台’係具有用來吸附保持該基板之吸附孔 ’並具備帛3回收裝置,以回收流出至該基板外側、流入 該吸附孔内之液體。 15 ·如申請專利範圍第14項之曝光裝置,其中,該第 3回收裝置’係具備用來將從該吸附孔流入之氣體與液體 加以分離之分離器。 16 ·如申請專利範圍第1項之曝光裝置,其中,該回 收裝置’係具備將所回收之液體、以及與液體同時回收之 氣體加以分離之分離器。 42 200425268 17 ·如申請專利範圍第1項之曝光裝置,其中,進一 步具備從該基板上方回收該基板上之液體的第2回收裝置 18 ·如申請專利範圍第1項之曝光裝置,其具備從該 基板上方將液體供應至該基板上的液體供應裝置,供應至 该基板上之大致所有的液體,係以該回收裝置加以回收。200425268 Patent application scope: 1 · An exposure device that transfers a pattern image onto a substrate through a liquid to expose the substrate, which is characterized by: a projection optical system that projects the pattern image onto a substrate; and a recycling device Is used to recover the liquid flowing out of the substrate. 2. The exposure device according to item 丨 of the patent application scope, which includes a substrate stage holding the substrate, and the recovery device has a recovery section provided on the substrate stage. 3. The exposure device according to item 2 of the scope of patent application, wherein the recovery section of the recovery device is arranged at least in a part of the periphery of the substrate holding section provided on the substrate stage. 4 · The exposure device according to item 2 of the patent application, wherein the recovery unit of the recovery device includes a liquid absorbing member arranged on the substrate stage. 5 · The exposure device according to item 4 of the patent application, wherein: The absorbing member includes a porous member. Body 6 · The exposure apparatus according to item 2 of the scope of patent application, wherein the recovered recovery portion 'includes a liquid recovery tank disposed on the substrate stage. 7 · The exposure device according to item 2 of the scope of the patent application, wherein the recycling portion 'includes a recycling hole disposed on the substrate stage. 8 · The exposure device according to item 2 of the patent application scope, wherein the recovery device recovers the substrate backside body that is held by the substrate stage. Night 9 · If the exposure device according to item 2 of the scope of patent application, the recovery 200425268 / set two in / when the substrate carrier reaches the substrate exchange position, the liquid recovered by the recovery unit is discharged. 10. The exposure device according to item 2 of the patent, which is provided with a suction device for suctioning the liquid recovered by the recovery section of the recovery unit. 11_ As mentioned in the patent, the exposure device of item 2 is provided, which is provided for receiving surgery. Container for liquid recovered by the recovery section of the Hai recovery device. 12 · If the patent application scope 1 item of the exposure device, it is equipped with a supply device to supply the liquid between the "Hai Ying film optical system and the substrate, when M only ~ photon system, and the immersion between the 4 and 4 substrates When the part is located at the periphery of the substrate, the supply device increases the supply of liquid. 13 The exposure device of item i in the patent scope of Shenyan has a second recovery device for recovering the liquid on the substrate. When the immersion part between the projection optical system and the substrate is located near the periphery of the substrate, the second recovery device reduces the liquid recovery amount. 14 · For the exposure device of the first scope of the patent application, wherein The substrate stage 'is equipped with an adsorption hole for holding and holding the substrate' and is equipped with a 帛 3 recovery device to recover the liquid flowing out of the substrate and flowing into the adsorption hole. 15 · Exposure to item 14 as in the scope of patent application A device, wherein the third recovery device is a separator for separating gas and liquid flowing from the adsorption hole. 16 · Exposure as described in item 1 of the scope of patent application The recovery device is equipped with a separator that separates the recovered liquid and the gas recovered with the liquid at the same time. 42 200425268 17 · The exposure device according to item 1 of the scope of patent application, which further includes The second recovery device 18 for recovering the liquid on the substrate above the substrate. The exposure device, such as the first item of the patent application scope, is provided with a liquid supply device for supplying liquid from above the substrate to the substrate, and for supplying the liquid to the substrate. Approximately all the liquid is recovered by the recovery device. 19 · 一種曝光裝置,係透過液體將圖案像轉印至基板 上以使基板曝光,其特在於,具備·· 投影光學系統,係將圖案像投影至基板: 液體供應裝置,係從該基板上方供應液體;以及 回收裝置,係回收該液體供應裝置所供應之液體; 該回收裝置,並不從該基板上方回收液體。 20 · —種曝光裝置,係透過液體將圖案像轉印至基板 上以使基板曝光,其特徵在於,具備: 投影光學系統,係將圖案像投影至基板;19 · An exposure device that transfers a pattern image onto a substrate through a liquid to expose the substrate, and includes: a projection optical system that projects the pattern image onto a substrate: a liquid supply device that is above the substrate Supply liquid; and a recovery device for recovering the liquid supplied by the liquid supply device; the recovery device does not recover liquid from above the substrate. 20 · An exposure device for transferring a pattern image onto a substrate through a liquid to expose the substrate, comprising: a projection optical system for projecting the pattern image onto the substrate; 吸氣系統,係具有吸氣口;以及 回收裳置,係回收從該吸氣口吸引之液體。 21 ·如申請專利範圍第20項之曝光裝置,其中,該回 收裝置’係將從該吸氣口吸引之液體與氣體加以分離。 22 ·如申請專利範圍第2〇項之曝光裝置,其中,該吸 氣口係用來將物體固定在既定位置。 23 ·如申請專利範圍第22項之曝光裝置,其中,進一 步具備基板載台,該物體為基板,該吸氣口係用來吸附保 持基板而被設置在該基板載台。 43 200425268 24 · —種曝光裝置,係透過液體將圖案像轉印至基板 上以使基板曝光,其特徵在於,具備: 投影光學系統,係將圖案像投影至基板; 基板載台,係保持該基板;以及 回收裝置,至少一部分係設於該基板台,以進行液體 之回收。 25 ·如申請專利範圍第24項之曝光裝置,其中,該回 收裝置,係回收流至該基板背面之液體。 26 ·如申請專利範圍第24項之曝光裝置,其中,該回 收裝置在該基板載台上面具有回收部。 27 ·如申請專利範圍第26項之曝光裝置,其中,該基 板載台具有用來保持該基板背面之保持部,該回收裝置, 在該保持部進一步具有其他回收部。 28 ·如申請專利範圍第24項之曝光裝置,其中,該回 收裝置包含液體吸收構件。 29 ·如申請專利範圍第24項之曝光裝置,其中,該回 收袭置具有設在該基板載台之槽部。 30 ·如申請專利範圍第24項之曝光裝置,其中,該回 收裝置,具有將所回收之液體與氣體加以分離的分離器。 31 ·如申請專利範圍第24項之曝光裝置,其中,以該 回收裝置回收之液體,係在該基板載台移動至既定位置時 被排出。 32 ·如申請專利範圍第31項之曝光裝置,其中,該既 疋位置包含基板交換位置。 200425268 33 ·如申請專利範圍帛24狀曝光裝置,纟進一步具 備設在該基板載台之干涉儀鏡,該回收裝置之液體回收部 係設在該干涉儀鏡之附近。 34 · —種元件製造方法,其特徵在於: 係使用申請專利範圍第 曝光裝置。 、19、20、24項中任一項之 35· -種曝光方法,係透過液體將圖案像轉印至基板 上以使基板曝光,其特徵在於,包含: 從基板上方將液體供應至該投影光學系統與該基板之 將該供應之液體,從基板外侧且較基板低之位置加以 回收的步驟;以及 在進行該液體之供應及回收期間,進行該基板之曝光 的步驟。 36·如申請專利範圍第35項之曝光方法,其中,進一 步包含將該供應之液體,從基板上方加以回收的步驟。 拾壹、圖式: 如次頁 45The suction system is provided with a suction port; and the recovery device is used to recover a liquid sucked from the suction port. 21 · The exposure device according to item 20 of the patent application range, wherein the recovery device 'separates the liquid and gas attracted from the suction port. 22 · The exposure device according to the scope of patent application No. 20, wherein the suction port is used to fix the object at a predetermined position. 23 · The exposure apparatus according to item 22 of the scope of patent application, further comprising a substrate stage, the object is a substrate, and the suction port is provided on the substrate stage for adsorbing and holding the substrate. 43 200425268 24 · An exposure device that transfers a pattern image onto a substrate through a liquid to expose the substrate, and is characterized by: a projection optical system that projects the pattern image onto a substrate; and a substrate stage that holds the A substrate; and a recovery device, at least a part of which is disposed on the substrate stage for liquid recovery. 25. The exposure device according to item 24 of the patent application range, wherein the recovery device recovers the liquid flowing to the back of the substrate. 26. The exposure apparatus according to item 24 of the patent application scope, wherein the recovery apparatus has a recovery section on the substrate stage. 27. The exposure apparatus according to item 26 of the patent application, wherein the substrate carrier has a holding portion for holding the back surface of the substrate, and the recovery device further includes another recovery portion in the holding portion. 28. The exposure apparatus of claim 24, wherein the recovery apparatus includes a liquid absorbing member. 29. The exposure apparatus according to item 24 of the scope of patent application, wherein the recovery unit has a groove portion provided on the substrate stage. 30. The exposure device according to item 24 of the patent application scope, wherein the recovery device has a separator for separating the recovered liquid and gas. 31. The exposure device according to item 24 of the patent application, wherein the liquid recovered by the recovery device is discharged when the substrate stage is moved to a predetermined position. 32. The exposure apparatus according to item 31 of the patent application scope, wherein the existing position includes a substrate exchange position. 200425268 33 · If the scope of patent application is "24-shaped exposure device", there is further an interferometer mirror provided on the substrate stage, and the liquid recovery part of the recovery device is located near the interferometer mirror. 34-A method for manufacturing a component, characterized in that it uses an exposure device in the scope of patent application. 35 · -An exposure method according to any one of 19, 20, and 24, wherein a pattern image is transferred to a substrate through a liquid to expose the substrate, and the method includes: supplying liquid to the projection from above the substrate A step of recovering the supplied liquid from the optical system and the substrate from a position lower than the substrate outside the substrate; and a step of exposing the substrate during the supply and recovery of the liquid. 36. The exposure method according to item 35 of the patent application scope, further comprising the step of recovering the supplied liquid from above the substrate. Pick up, schema: as next page 45
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US20050219488A1 (en) 2005-10-06
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JP4596077B2 (en) 2010-12-08
US8089611B2 (en) 2012-01-03

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