KR20010105158A - 반도체 집적회로장치 및 그 제조방법 - Google Patents
반도체 집적회로장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR20010105158A KR20010105158A KR1020010017834A KR20010017834A KR20010105158A KR 20010105158 A KR20010105158 A KR 20010105158A KR 1020010017834 A KR1020010017834 A KR 1020010017834A KR 20010017834 A KR20010017834 A KR 20010017834A KR 20010105158 A KR20010105158 A KR 20010105158A
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- South Korea
- Prior art keywords
- film
- wiring
- insulating film
- forming
- conductive film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000010949 copper Substances 0.000 claims abstract description 149
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 139
- 239000010937 tungsten Substances 0.000 claims abstract description 139
- 229910052802 copper Inorganic materials 0.000 claims abstract description 137
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 136
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 136
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 101
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 78
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 102
- 238000005229 chemical vapour deposition Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 30
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910020177 SiOF Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- -1 SiOC Chemical compound 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 27
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000005984 hydrogenation reaction Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 642
- 239000010410 layer Substances 0.000 description 84
- 238000005530 etching Methods 0.000 description 51
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 47
- 229910052739 hydrogen Inorganic materials 0.000 description 28
- 239000001257 hydrogen Substances 0.000 description 28
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 24
- 239000010936 titanium Substances 0.000 description 22
- 230000007547 defect Effects 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 14
- 239000012535 impurity Substances 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000027756 respiratory electron transport chain Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012789 electroconductive film Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
Claims (50)
- (a) 반도체 기판상에 형성된 제1절연막중에 배선홈을 형성하는 공정과,(b) 상기 배선홈 내부를 포함하는 상기 제1절연막상에 배리어층 및 도전성막을 순차 형성 후, 상기 배선홈 외부의 상기 배리어층 및 도전성막을 제거함으로써 배선을 형성하는 공정과,(c) 상기 배선상에 캡 도전성막을 선택성장 혹은 우선성장시킴으로써, 상기 배선상에 캡 도전성막을 형성하는 공정과,(d) 상기 캡 도전성막 및 상기 제1절연막상에 제2절연막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 형성된 제1절연막중에 배선홈을 형성하는 공정과,(b) 상기 배선홈 내부에 배리어층 및 제1도전성막을 순차 형성함으로써 배선을 형성하는 공정과,(c) 상기 배선상에 캡 도전성막을 선택성장 혹은 우선성장시킴으로써, 상기 배선상에 캡 도전성막을 형성하는 공정과,(d) 상기 캡 도전성막 및 상기 제1절연막상에 제2절연막을 형성하는 공정과(e) 상기 배선상의 상기 제2절연막을 부분적으로 제거하여, 상기 캡 도전성막을 노출하는 개공을 형성하는 공정과,(f) 상기 개공내에 제2도전성막을 형성하는 공정을 갖는 것을 특징으로 하는반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 제1배선을 형성하는 공정과,(b) 상기 제1배선상에 제1절연막을 형성하는 공정과,(c) 상기 제1배선의 콘택트 영역상의 상기 제1절연막을 제거함으로써 콘택트홀을 형성하는 공정과,(d) 상기 콘택트홀 내를 포함하는 제1절연막상에 제1도전성막을 형성하는 공정과,(e) 상기 콘택트홀 외부의 제1도전성막을 제거함으로써 플래그를 형성하는 공정과,(f) 상기 제1절연막 및 상기 플래그상에 제2절연막을 형성하는 공정과,(g) 제2배선형성 예정영역의 상기 제2절연막을 제거함으로써 배선홈을 형성하는 공정과,(h) 상기 배선홈 내부를 포함하는 상기 제2절연막상에 배리어층 및 제2도전성막을 순차 형성하는 공정과,(i) 상기 배선홈 외부의 상기 배리어층 및 제2도전성막을 제거함으로써 제2배선을 형성하는 공정과,(j) 상기 제2배선막상에 캡 도전성막을 선택성장 혹은 우선성장시킴으로써, 상기 제2배선상에 캡 도전성막을 형성하는 공정과,(k) 상기 캡 도전성막 및 상기 제2절연막상에 제3절연막을 형성하는 공정을갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 제1배선을 형성하는 공정과,(b) 상기 제1배선상에 제1절연막 및 제2절연막을 순차 형성하는 공정과,(c) 상기 제1배선의 콘택트 영역상의 상기 제1 및 제2절연막을 제거함으로써 콘택트홀을 형성하는 공정과,(d) 제2배선형성 예정영역의 상기 제2절연막을 제거함으로써 배선홈을 형성하는 공정과,(e) 상기 콘택트홀 및 배선홈 내부를 포함하는 상기 제2절연막상에 배리어층 및 도전성막을 순차 형성하는 공정과,(f) 상기 콘택트홀 및 배선홈 외부의 상기 배리어층 및 도전성막을 제거함으로써 제2배선 및 상기 제1배선과 제2배선과의 접속부를 형성하는 공정과,(g) 상기 제2배선상에 캡 도전성막을 선택성장 혹은 우선성장시킴으로써, 상기 제2배선상에 캡 도전성막을 형성하는 공정과,(h) 상기 캡 도전성막 및 상기 제2절연막상에 제3절연막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 제1배선을 형성하는 공정과,(b) 상기 제1배선상에 제1절연막 및 제2절연막을 순차 형성하는 공정과,(c) 제2배선형성 예정영역의 상기 제2절연막을 제거함으로써 배선홈을 형성하는 공정과,(d) 상기 제1배선의 콘택트 영역상의 제1절연막을 제거함으로써 콘택트홀을 형성하는 공정과,(e) 상기 콘택트홀 및 배선홈 내부를 포함하는 상기 제2절연막상에 배리어층 및 도전성막을 순차 형성하는 공정과,(f) 상기 콘택트홀 및 배선홈 외부의 상기 배리어층 및 도전성막을 제거함으로써 제2배선 및 상기 제1배선과 제2배선과의 접속부를 형성하는 공정과,(g) 상기 제2배선막상에 캡 도전성막을 선택성장 혹은 우선성장시킴으로써, 상기 제2배선상에 캡 도전성막을 형성하는 공정과,(h) 상기 캡 도전성막 및 상기 제2절연막상에 제3절연막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 반도체 집적회로장치의 제조방법은,상기 청구항 1 기재의 제2절연막, 청구항 4 기재의 제3절연막 혹은 청구항 5 기재의 제3절연막을 부분적으로 제거하여, 상기 캡 도전성막을 노출하는 개공을 더 형성하는 공정과,상기 개공내에 도전재료를 매립함으로써 플래그를 형성하는 공정과,상기 청구항 1 기재의 제2절연막, 청구항 4 기재의 제3절연막 혹은 청구항 5 기재의 제3절연막상에 상기 플래그위까지 연장하는 상층배선을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 청구항 1 기재의 배선 혹은 청구항 2 내지 5 기재의 제2배선은, 동, 은, 알루미늄 혹은 이들 금속을 주성분으로 하는 합금으로 이루어지는 배선인 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막은, W로 이루어지는 막인 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막은 WN, TiN, Ta, TaN 혹은 Ni로 이루어지는 막인 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막은, 1Torr(1×1.33322×102Pa) 이하의 압력하에서 형성되는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,제2절연막의 형성공정은,(a) 상기 캡 도전성막상에 TEOS막 혹은 탄소를 포함하는 실리콘계 절연막을 형성하는 공정과,(b) 상기 TEOS막 혹은 탄소를 포함하는 실리콘계 절연막상에 상기 TEOS막 혹은 탄소를 포함하는 실리콘계 절연막보다 유전율이 낮은 막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,제2절연막의 형성공정은,(a) 상기 캡 도전성막상에, 상기 캡 도전성막을 형성하는 도전체 재료의 확산을 방지하는 확산방지 절연막을 형성하는 공정과,(b) 상기 확산방지 절연막상에 상기 확산방지 절연막 보다도 유전율이 낮은 저유전 절연막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제12항에 있어서,상기 확산방지 절연막은, 질화실리콘막, PSG막 혹은 탄화실리콘막 혹은 탄소를 포함하는 실리콘 절연막인 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제12항에 있어서,상기 저유전 절연막은, TEOS막, SiOF막 등의 불소를 포함하는 실리콘 산화막, SiOC 등의 탄소를 포함하는 실리콘 절연막, 유기 절연막, 포러스 실리카(porous silica)막중 어느 하나를 포함하는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막은, 기판표면을 불화수소(HF) 혹은 이물 또는 오염금속을 제거하는 다른 용액으로 세정한 후 형성되는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막은, 기판표면을 수소처리한 후 형성되는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제1항에 있어서,상기 캡 도전성막 형성공정은, 상기 선택성장 혹은 우선성장 후에, 기판표면을 불화수소(HF) 혹은 과산화수소(H2O2) 혹은 이물 또는 오염금속을 제거하는 용액으로 세정하는 공정을 포함하는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 반도체 기판상에 형성된 제1절연막과, 상기 절연막중에 형성된 배선홈과, 상기 배선홈 측벽 및 저부에 형성된 배리어층과, 상기 배선홈 내부에 있어서, 상기 배리어층상에 형성된 도전성막과, 상기 도전성막상에 형성된 캡 도전성막과, 상기 캡 도전성막 및 상기 제1절연막상에 형성된 제2절연막을 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 반도체 기판상에 형성된 배선과, 상기 배선상에 형성된 제1절연막과, 상기 제1배선의 콘택트 영역상에 있어서, 상기 제1절연막중에 형성된 콘택트홀과, 상기 콘택트홀 내부에 형성된 플래그와, 상기 제1절연막 및 플래그상에 형성된 제2절연막과, 상기 제2절연막중에 형성된 배선홈과, 상기 배선홈 측벽 및 저부에 형성된 배리어층과, 상기 배선홈 내부에 있어서, 상기 배리어층상에 형성된 도전성막과, 상기 도전성막상에 형성된 캡 도전성막과, 상기 캡 도전성막상 및 상기 제2절연막상에 형성된 제3절연막을 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 반도체 기판상에 형성된 배선과, 상기 배선상에 형성된 제1절연막과, 상기 제1절연막중에 형성된 배선홈 및 상기 배선홈 저부에서 상기 배선까지 연장하는 제1콘택트홀과, 상기 배선홈 및 제1콘택트홀의 측벽 및 저부에 형성된 배리어층과,상기 배선홈 및 제1콘택트홀 내부에서 상기 배리어층상에 형성된 제1도전성막과, 상기 제1도전성막상에 형성된 캡 도전성막과, 상기 캡 도전성막상 및 상기 제1절연막상에 형성된 제2절연막과, 상기 제2절연막에 형성된 제2콘택트홀의 내부에 형성된 제2도전성막을 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 제20항에 있어서,상기 제1절연막은, 상기 배선홈이 형성된 홈용 절연막과, 상기 제1콘택트홀이 형성된 콘택트홀용 절연막으로 이루어지는 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 반도체 집적회로장치는 또한, 상기 제3절연막으로 형성된 개공부로서, 상기 캡 도전성막상에 형성된 개구부의 내부에 형성된 도전재료를 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 제1도전성막은, 동, 은, 알루미늄 혹은 이들 금속을 주성분으로 하는 합금으로 이루어지는 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은 W로 이루어지는 막인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은 WN, TiN, Ta, TaN 혹은 Ni로 이루어지는 막인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 선택성장 혹은 우선성장에 의해 형성된 막인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 1Torr(1×1.33322×102Pa) 이하의 압력하에서 형성된 막인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 그 막두께가 균일한 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 그 편차가 50% 이하의 균일성을 갖는 막인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 그 막두께가, 배선폭에 의하지 않고 균일한 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 상기 배선홈 저부의 배리어층 보다 얇은 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 캡 도전성막은, 2 ~ 20㎚의 막두께인 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 청구항 18 혹은 20에 기재된 제2절연막 혹은 청구항 19에 기재된 제3절연막은, 상기 캡 도전성막상에 형성된 TEOS막 혹은 탄화실리콘막과, 상기 TEOS막 혹은 탄화실리콘막상에 형성된 상기 TEOS막 혹은 탄화실리콘막보다 유전율이 낮은막을 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 제18항에 있어서,상기 제2절연막은, 상기 캡 도전성막상에 형성된 상기 도전성막을 구성하는 도전체 재료의 확산을 방지하는 확산방지 절연막과, 상기 확산방지 절연막상에 형성된 상기 확산방지 절연막보다 유전율이 낮은 저유전 절연막을 갖는 것을 특징으로 하는 반도체 집적회로장치.
- 제34항에 있어서,상기 저유전 절연은, TEOS막 혹은 SiOF막 혹은 포러스 실리카막(porous silica) 혹은 유기 절연막인 것을 특징으로 하는 반도체 집적회로장치.
- 제34항에 있어서,상기 확산방지 절연막은, 질화실리콘막, PSG막 혹은 탄화실리콘막 혹은 탄소를 포함하는 실리콘계 절연막인 것을 특징으로 하는 반도체 집적회로장치.
- 제1항에 있어서,상기 캡 도전성막은, 선택 CVD(Chemical Vapor Deposition)법에 의해, 상기 배선상에 선택형성되며, 상기 도전성막은 동막으로 구성되는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제18항에 있어서,상기 캡 도전성막은, 선택 CVD(Chemical Vapor Deposition)법에 의해, 상기 배선상에 선택형성되며, 상기 도전성막은 동막으로 구성되는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 형성된 제1절연막중에 홈을 형성하는 공정과,(b) 상기 홈 내부를 포함하는 상기 제1절연막상에 동막을 피착하는 공정과,(c) 상기 홈 외부의 상기 동막을 제거함으로써, 상기 홈에 상기 동막을 매립하는 공정과,(d) 선택 CVD(Chemical Vapor Deposition)법에 의해, 상기 홈 내부에 매립된 동막상에 캡막을 선택성장시킴으로써, 상기 홈 내부의 동막상에 캡 도전성막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제39항에 있어서,상기 (d)공정 후, 이물 혹은 오염금속을 제거하는 용액으로 세정하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제40항에 있어서,상기 (c)공정과 (d)공정의 사이에, 이물 혹은 오염금속을 제거하는 용액으로세정하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제39항에 있어서,상기 캡막은 텅스텐막인 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 형성된 제1절연막중에 홈을 형성하는 공정과,(b) 상기 홈 내부를 포함하는 상기 제1절연막상에 동막을 피착하는 공정과,(c) 상기 홈 외부의 상기 동막을 제거함으로써, 상기 홈에 상기 동막을 매립하는 공정과,(d) 상기 홈에 매립된 동막상에 캡 도전성막을 선택성장시킴으로써, 상기 동막상에 캡 도전성막을 형성하는 공정과,(e) 상기 (d)공정의 후, 이물 혹은 오염금속을 제거하는 용액으로 세정하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제43항에 있어서,상기 (d)공정 후에, 상기 동막을 수소처리하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제44항에 있어서,상기 (b) 공정과 상기 (c) 공정의 사이에, 상기 동막을 수소처리하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제43항에 있어서,상기 (c) 공정과 (d) 공정의 사이에, 이물 혹은 오염금속을 제거하는 용액으로 세정하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 형성된 제1절연막중에 홈을 형성하는 공정과,(b) 상기 홈 내부를 포함하는 상기 제1절연막상에 동막을 피착하는 공정과,(c) 상기 동막을 수소처리하는 공정과,(d) 상기 (c) 공정 후, 상기 홈 외부의 상기 동막을 제거함으로써, 상기 홈에 상기 동막을 매립하는 공정과,(e) 상기 홈에 매립된 동막을 수소처리하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제47항에 있어서,상기 (d)공정 후에, 이물 혹은 오염금속을 제거하는 용액으로 세정하는 공정을 더 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- (a) 반도체 기판상에 형성된 제1절연막중에 홈을 형성하는 공정과,(b) 상기 홈 내부를 포함하는 상기 제1절연막상에 동막을 피착하는 공정과,(c) 상기 홈 외부의 상기 동막을 제거함으로써, 상기 홈에 상기 동막을 매립하는 공정과,(d) 상기 (c) 공정 후, 이물 혹은 오염금속을 제거하는 용액으로 세정하는 공정과,(e) 상기 (c) 공정 후, 상기 동막을 수소처리하는 공정을 갖는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
- 제49항에 있어서,상기 (e) 공정은 상기 (d) 공정 후에 행해지는 것을 특징으로 하는 반도체 집적회로장치의 제조방법.
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2000
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- 2001-03-14 TW TW090105990A patent/TW483105B/zh not_active IP Right Cessation
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- 2001-05-08 US US09/850,162 patent/US6818546B2/en not_active Expired - Lifetime
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TW483105B (en) | 2002-04-11 |
US20010045651A1 (en) | 2001-11-29 |
KR100832177B1 (ko) | 2008-05-23 |
KR100779295B1 (ko) | 2007-11-23 |
JP2001319928A (ja) | 2001-11-16 |
US7321171B2 (en) | 2008-01-22 |
US20080042282A1 (en) | 2008-02-21 |
US7642652B2 (en) | 2010-01-05 |
US6818546B2 (en) | 2004-11-16 |
KR20070083230A (ko) | 2007-08-23 |
US20050095844A1 (en) | 2005-05-05 |
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