JP3810411B2 - 集積回路装置 - Google Patents
集積回路装置 Download PDFInfo
- Publication number
- JP3810411B2 JP3810411B2 JP2004016263A JP2004016263A JP3810411B2 JP 3810411 B2 JP3810411 B2 JP 3810411B2 JP 2004016263 A JP2004016263 A JP 2004016263A JP 2004016263 A JP2004016263 A JP 2004016263A JP 3810411 B2 JP3810411 B2 JP 3810411B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit device
- wiring
- pad
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012544 monitoring process Methods 0.000 claims description 23
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910016570 AlCu Inorganic materials 0.000 claims description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 229910004166 TaN Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 44
- 238000009792 diffusion process Methods 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
2;論理回路部
3、23;温度センサ部
4;CMOS回路
5、6;チャネル領域
7;絶縁材料
8;パッド
9;ビア
10;温度モニタ部材
15;絶縁層
16;シート層
19;開口部
20;外部パッド
D;寄生pn接合ダイオード
G1、G2;ゲート電極
M1、M21;多層配線層
PSub;P型シリコン基板
R;抵抗体
Vg;ゲート端子
Vout1、Vout21;出力端子
PW1;Pウエル
NW1、NW2;Nウエル
P1、P2、P21;p+拡散領域
N1、N2、N21;n+拡散領域
V1〜V6、V11、V12、V21〜V26;ビア
W1〜W5、W11、W12、W21〜W23;配線
Vcc;電源電位配線
GND;接地電位配線
Claims (10)
- 基板と、この基板上に設けられた多層配線層とを備えた集積回路装置において、前記多層配線層は、2本の配線と、この2本の配線に夫々接続された2個のプラグと、金属酸化物からなり前記2個のプラグ間に接続されると共に前記プラグの直上に設けられた温度モニタ部材と、前記プラグと前記温度モニタ部材との間に設けられた導電性材料からなる2個のパッドと、を有し、前記パッドによって、前記プラグと前記温度モニタ部材との間に絶縁体が形成されないようにしたことを特徴とする集積回路装置。
- 前記金属酸化物が酸化バナジウムであることを特徴とする請求項1に記載の集積回路装置。
- 前記プラグを形成する材料がタングステンであることを特徴とする請求項1又は2に記載の集積回路装置。
- 前記パッドが、Ti、TiN、Al、AlCu合金、Cu、Ta、TaN、NiCr合金からなる群から選択された1種の導電性材料、2種以上の導電性材料の化合物、又はこれらの導電性材料若しくは化合物を含む材料により形成されていることを特徴とする請求項1乃至3のいずれか1項に記載の集積回路装置。
- 前記パッドを覆うように設けられた絶縁層を有し、この絶縁層における前記パッドの直上域に前記パッドに到達するようにビアが設けられており、このビア内に前記金属酸化物が埋め込まれており、前記温度モニタ部材はこのビア内の金属酸化物を介して前記パッドに接続されていることを特徴とする請求項1乃至4のいずれか1項に記載の集積回路装置。
- 前記温度モニタ部材が前記パッドを覆うように配置されており、前記温度モニタ部材が前記パッドに接触していることを特徴とする請求項1乃至4のいずれか1項に記載の集積回路装置。
- 前記温度モニタ部材の直下域にその少なくとも一部が配置された論理回路部を有することを特徴とする請求項1乃至6のいずれか1項に記載の集積回路装置。
- 前記配線が前記多層配線層の最上層の配線であり、前記プラグ、前記パッド及び前記温度モニタ部材は前記配線の上方に配置されていることを特徴とする請求項1乃至7のいずれか1項に記載の集積回路装置。
- 前記プラグ、前記パッド及び前記温度モニタ部材を含む層における前記配線の直上域であって前記温度モニタ部材の直上域及び直下域を除く領域の一部に、前記配線に到達する開口部が形成されていることを特徴とする請求項8に記載の集積回路装置。
- 前記温度モニタ部材の形状がシート状であることを特徴とする請求項1乃至9のいずれか1項に記載の集積回路装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004016263A JP3810411B2 (ja) | 2004-01-23 | 2004-01-23 | 集積回路装置 |
CNB2005100043775A CN100521205C (zh) | 2004-01-23 | 2005-01-17 | 集成电路器件 |
CN2008101896923A CN101452931B (zh) | 2004-01-23 | 2005-01-17 | 集成电路器件 |
US11/038,094 US7239002B2 (en) | 2004-01-23 | 2005-01-21 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004016263A JP3810411B2 (ja) | 2004-01-23 | 2004-01-23 | 集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005209963A JP2005209963A (ja) | 2005-08-04 |
JP3810411B2 true JP3810411B2 (ja) | 2006-08-16 |
Family
ID=34792472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004016263A Expired - Fee Related JP3810411B2 (ja) | 2004-01-23 | 2004-01-23 | 集積回路装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7239002B2 (ja) |
JP (1) | JP3810411B2 (ja) |
CN (2) | CN101452931B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4541717B2 (ja) * | 2004-02-09 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 集積回路装置及びその製造方法 |
US7839201B2 (en) | 2005-04-01 | 2010-11-23 | Raytheon Company | Integrated smart power switch |
US7510323B2 (en) * | 2006-03-14 | 2009-03-31 | International Business Machines Corporation | Multi-layered thermal sensor for integrated circuits and other layered structures |
WO2007122560A2 (en) * | 2006-04-20 | 2007-11-01 | Nxp B.V. | Semiconductor substrate temperature determination |
JP4434214B2 (ja) * | 2007-02-08 | 2010-03-17 | 株式会社デンソー | バッテリ状態検知装置 |
KR100902584B1 (ko) * | 2007-12-03 | 2009-06-11 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
JP5601566B2 (ja) * | 2010-01-28 | 2014-10-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8946904B2 (en) * | 2010-08-27 | 2015-02-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Substrate vias for heat removal from semiconductor die |
CH709489B1 (de) * | 2014-04-14 | 2021-04-30 | Tecan Trading Ag | Verfahren zur Durchführung einer kapazitiven Flüssigniveaumessung. |
US10371583B1 (en) * | 2014-11-11 | 2019-08-06 | Ansys, Inc. | Systems and methods for estimating temperatures of wires in an integrated circuit chip |
CN105938021B (zh) * | 2016-06-30 | 2018-02-23 | 东南大学 | 一种多层电感无源无线lc温度传感器 |
TWI742613B (zh) * | 2020-04-14 | 2021-10-11 | 聯陽半導體股份有限公司 | 積體電路的溫度感測裝置 |
Family Cites Families (31)
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CA991756A (en) * | 1974-04-19 | 1976-06-22 | Richard I. Maran | Semi-conductor thermal protection arrangement |
US4900695A (en) * | 1986-12-17 | 1990-02-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for producing the same |
JPH01302849A (ja) | 1988-05-31 | 1989-12-06 | Fujitsu Ltd | 半導体集積回路装置 |
US5602043A (en) * | 1995-01-03 | 1997-02-11 | Texas Instruments Incorporated | Monolithic thermal detector with pyroelectric film and method |
JP3349036B2 (ja) | 1995-06-14 | 2002-11-20 | 三菱電機株式会社 | 測温用抵抗体、その製法および該測温用抵抗体を用いる赤外線検知素子 |
JPH09229778A (ja) | 1996-02-26 | 1997-09-05 | Hitachi Ltd | Ic化温度センサ |
JP3277827B2 (ja) | 1996-11-19 | 2002-04-22 | 三菱電機株式会社 | 抵抗素子 |
US6013934A (en) * | 1997-03-18 | 2000-01-11 | Lucent Technologies Inc. | Semiconductor structure for thermal shutdown protection |
JP3600415B2 (ja) * | 1997-07-15 | 2004-12-15 | 株式会社東芝 | 分布定数素子 |
JP3697044B2 (ja) * | 1997-12-19 | 2005-09-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP3180768B2 (ja) | 1998-07-14 | 2001-06-25 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
US6031729A (en) * | 1999-01-08 | 2000-02-29 | Trw Inc. | Integral heater for reworking MCMS and other semiconductor components |
TW454330B (en) * | 1999-05-26 | 2001-09-11 | Matsushita Electronics Corp | Semiconductor apparatus and its manufacturing method |
CA2293118A1 (en) * | 1999-12-24 | 2001-06-24 | Francis Picard | Bolometric fingerprint sensor |
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
US6407440B1 (en) * | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
JP2001319928A (ja) * | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
JP2002217258A (ja) | 2001-01-22 | 2002-08-02 | Hitachi Ltd | 半導体装置およびその測定方法、ならびに半導体装置の製造方法 |
JP4135857B2 (ja) * | 2001-03-27 | 2008-08-20 | 独立行政法人産業技術総合研究所 | 赤外線センサの製造方法 |
CN1290194C (zh) * | 2001-06-25 | 2006-12-13 | 松下电器产业株式会社 | 电容元件、半导体存储器及其制备方法 |
CA2468251A1 (en) * | 2001-11-26 | 2003-06-05 | Sony International (Europe) G.M.B.H. | The use of 1d semiconductor materials as chemical sensing materials, produced and operated close to room temperature |
JP2003188254A (ja) * | 2001-12-18 | 2003-07-04 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
JP2003297994A (ja) * | 2002-03-29 | 2003-10-17 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3869815B2 (ja) * | 2003-03-31 | 2007-01-17 | Necエレクトロニクス株式会社 | 半導体集積回路装置 |
CN100377357C (zh) * | 2003-10-22 | 2008-03-26 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
JP4541717B2 (ja) * | 2004-02-09 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 集積回路装置及びその製造方法 |
JP4620962B2 (ja) * | 2004-03-30 | 2011-01-26 | ルネサスエレクトロニクス株式会社 | 集積回路装置の製造方法及び酸化バナジウム膜の形成方法 |
JP4536408B2 (ja) * | 2004-03-30 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 集積回路装置 |
US6945735B1 (en) * | 2004-04-06 | 2005-09-20 | Mark Doverspike | Alignment and support apparatus |
JP4535367B2 (ja) * | 2004-05-24 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 集積回路装置 |
-
2004
- 2004-01-23 JP JP2004016263A patent/JP3810411B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-17 CN CN2008101896923A patent/CN101452931B/zh active Active
- 2005-01-17 CN CNB2005100043775A patent/CN100521205C/zh active Active
- 2005-01-21 US US11/038,094 patent/US7239002B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101452931A (zh) | 2009-06-10 |
CN101452931B (zh) | 2010-11-10 |
US20050161822A1 (en) | 2005-07-28 |
US7239002B2 (en) | 2007-07-03 |
CN1645613A (zh) | 2005-07-27 |
CN100521205C (zh) | 2009-07-29 |
JP2005209963A (ja) | 2005-08-04 |
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