KR20010071250A - 실리콘 웨이퍼의 제조방법 및 실리콘 웨이퍼 - Google Patents
실리콘 웨이퍼의 제조방법 및 실리콘 웨이퍼 Download PDFInfo
- Publication number
- KR20010071250A KR20010071250A KR1020007012698A KR20007012698A KR20010071250A KR 20010071250 A KR20010071250 A KR 20010071250A KR 1020007012698 A KR1020007012698 A KR 1020007012698A KR 20007012698 A KR20007012698 A KR 20007012698A KR 20010071250 A KR20010071250 A KR 20010071250A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- heat treatment
- silicon wafer
- oxygen concentration
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 157
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 157
- 239000010703 silicon Substances 0.000 title claims abstract description 157
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 76
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 248
- 239000001301 oxygen Substances 0.000 claims abstract description 248
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 248
- 238000010438 heat treatment Methods 0.000 claims abstract description 229
- 238000000034 method Methods 0.000 claims abstract description 111
- 238000001556 precipitation Methods 0.000 claims abstract description 65
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 235000012431 wafers Nutrition 0.000 claims description 393
- 239000002244 precipitate Substances 0.000 claims description 51
- 238000005247 gettering Methods 0.000 claims description 40
- 239000010410 layer Substances 0.000 claims description 25
- 238000005498 polishing Methods 0.000 claims description 25
- 230000007547 defect Effects 0.000 claims description 23
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 38
- 238000012545 processing Methods 0.000 abstract description 10
- 230000007423 decrease Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 29
- 241000220259 Raphanus Species 0.000 description 11
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004854 X-ray topography Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 230000001698 pyrogenic effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- UZHDGDDPOPDJGM-UHFFFAOYSA-N Stigmatellin A Natural products COC1=CC(OC)=C2C(=O)C(C)=C(CCC(C)C(OC)C(C)C(C=CC=CC(C)=CC)OC)OC2=C1O UZHDGDDPOPDJGM-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002440 hepatic effect Effects 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
석출열처리 | 산소농도(ppma-JEIDA) | 저항율(Ω·cm) | ||
초기 격자간 산소 | 잔존 격자간 산소 | 디바이스제조 열처리전 | 디바이스제조 열처리후 | |
A | 20 | 6.5 | 15000 | 8000 |
18 | 7.5 | 23000 | 9000 | |
15 | 10 | 20000 | 80 | |
13 | 12 | 5000 | 7 | |
12 | 11 | 4500 | 6 | |
B | 20 | 4.5 | 17000 | 9000 |
18 | 4.5 | 15000 | 3000 | |
15 | 6 | 23000 | 8300 | |
13 | 7 | 1100 | 200 | |
12 | 7 | 1000 | 210 | |
C | 20 | 11 | 6000 | 20 |
18 | 16 | 6200 | 7 | |
15 | 14.5 | 8000 | 6 | |
13 | 13 | 3000 | 4 | |
12 | 12 | 3000 | 4 | |
D | 20 | 4.5 | 9000 | 6000 |
18 | 7 | 8000 | 350 | |
15 | 13 | 7000 | 6 | |
13 | 12.5 | 10000 | 5 | |
12 | 11.5 | 9000 | 4 | |
E | 20 | 4.5 | 1500 | 2500 |
18 | 5 | 1100 | 2000 | |
15 | 6 | 1000 | 800 | |
13 | 7 | 1200 | 250 | |
12 | 6.5 | 1100 | 300 |
초기단계 | 결합열처리 후 | 디바이스 열처리 후 | |
저항율,도전형 | 11200Ω·cm, P-형 | 9980Ω·cm, N-형 | 3520Ω·cm, N-형 |
격자간 산소농도 | 17.6ppma | 7.2ppma | 7.2ppma |
산소석출밀도 | - | 1.05×1010/㎤ | 1.05×1010/㎤ |
저항율(Ω·cm) | 초기 격자간산소농도(ppma) | 잔류 격자간산소농도(ppma) | 잔류 격자간산소농도(ppma) | 산소석출물밀도(×1010/㎤) | 산소석출물크기 평균치(nm) | 열처리온도(℃) | 슬립발생유무 | |
다면체 | 판상 | |||||||
15.79k | 17.8 | 5.1 | 5.1 | 1.42-1.65 | 150 | - | 1200 | 무 |
18.74k | 17.9 | 5.1 | 5.1 | 1.41-1.61 | 190 | 300 | 1150 | 무 |
18.51k | 17.8 | 5.0 | 5.0 | 1.51-1.56 | 204 | 400 | 1100 | 무 |
9.15k | 17.7 | 5.4 | 5.4 | 0.40-0.45 | 206 | 400 | 1100 | 무 |
21.45k | 17.7 | 5.2 | 5.2 | 0.37-0.42 | 210 | 370 | 1100 | 무 |
9.70k | 17.7 | 5.3 | 5.3 | 0.30-0.39 | 222 | - | 1100 | 무 |
12.18k | 17.2 | 6.0 | 6.0 | 0.33-0.39 | 212 | - | 1100 | 무 |
9.00k | 17.5 | 5.9 | 5.9 | 0.35-0.50 | 300 | 500 | 1100 | 무 |
10 | 18.0 | 6.0 | 6.0 | 1.5-2.0 | 235 | 400 | 1100 | 무 |
50 | 18.1 | 6.1 | 6.1 | 1.5-2.0 | 215 | 400 | 1100 | 무 |
100 | 18.0 | 5.9 | 5.9 | 1.5-2.0 | 220 | 400 | 1100 | 무 |
7.0k | 15.0 | 13.0 | 13.0 | < 0.01 | - | - | 1100 | 유 |
10.0k | 13.0 | 12.5 | 12.5 | < 0.01 | - | - | 1200 | 유 |
50 | 14.0 | 13.0 | 13.0 | < 0.01 | - | - | 1100 | 유 |
20 | 14.5 | 13.5 | 13.5 | < 0.01 | - | - | 1150 | 유 |
Claims (19)
- 쵸크랄스키법에 의해 저항율이 100Ω·cm 이상이고 초기 격자간 산소농도가 10~25ppma인 실리콘 단결정 잉곳을 육성하고, 상기 실리콘 단결정 잉곳을 웨이퍼로 가공하고, 그리고 웨이퍼중 잔류 격자간 산소농도가 8ppma 이하로 되도록 상기 웨이퍼에 산소석출 열처리를 행하는 것을 포함하는 실리콘 웨이퍼의 제조방법
- 제1항의 제조방법에 의해 제조된 실리콘 웨이퍼
- 저항율이 100Ω·cm 이상이고 초기 격자간 산소농도가 10~25ppma인 실리콘 웨이퍼에 산소 석출 열처리를 행하여 제조된 실리콘 웨이퍼에 있어서, 잔류 격자간 산소농도가 8ppma 이하인 것을 특징으로 하는 실리콘 웨이퍼
- 저항율이 100Ω·cm 이상이고 초기 격자간 산소농도가 10~25ppma인 실리콘 웨이퍼에 있어서, 350~500℃의 디바이스 제조 열처리 후, 저항율이 100Ω·cm 이상으로 유지되는 것을 특징으로 하는 실리콘 웨이퍼
- 제3항 또는 제4항에 있어서, 게터링 열처리 또는 디바이스 제조 열처리후, 벌크결함밀도가 1×108~2×1010개/㎤인 것을 특징으로 하는 실리콘 웨이퍼
- 저항율이 100Ω·cm 이상인 실리콘 웨이퍼에 있어서, 격자간 산소농도가 8ppma 이하이고, 벌크결함밀도가 1×108~2×1010개/㎤인 것을 특징으로 하는 실리콘 웨이퍼
- 제2항 내지 제6항 중 어느 한 항의 실리콘 웨이퍼를 베이스웨이퍼로 이용한 접합 SOI 웨이퍼
- 본드웨이퍼와 베이스웨이퍼를 산화막을 통해 밀착시키는 단계, 결합 열처리를 가하여 상기 본드웨이퍼와 베이스웨이퍼를 강하게 결합시키는 단계, 본드웨이퍼를 박막화하여 SOI층으로 하는 단계를 포함하는 접합 SOI 웨이퍼의 제조방법에 있어서, 상기 베이스웨이퍼로서 저항율이 100Ω·cm 이상이고 초기 격자간 산소농도가 10~25ppma인 실리콘 웨이퍼를 이용하고, 상기 결합열처리로서 베이스웨이퍼중 잔류 격자간 산소농도를 8ppma 이하로 할 수 있는 열처리를 행하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법
- 제8항에 있어서, 상기 이용되는 베이스웨이퍼는, 상기 베이스웨이퍼와 본드웨이퍼를 밀착시키는 단계 전에, 산소석출 열처리의 적어도 일부가 행해진 웨이퍼인 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법
- 제9항에 있어서, 상기 베이스웨이퍼에 행하는 산소석출 열처리의 적어도 일부를, 상기 베이스웨이퍼의 최종연마 전에 행하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법
- 쵸크랄스키법에 의해 초기 격자간 산소농도가 10~25ppma인 실리콘 단결정 잉곳을 육성하여 그 실리콘 단결정 잉곳을 웨이퍼로 가공하고, 웨이퍼중 잔류 격자간 산소농도를 8ppma 이하로 되도록 상기 웨이퍼에 산소석출 열처리를 행하는 것을 포함하는 실리콘 웨이퍼의 제조방법
- 제11항에 있어서, 상기 산소석출 열처리를 행하여, 웨이퍼중 잔류 격자간 산소농도를 6ppma 이하로 하는 것을 특징으로 하는 실리콘 웨이퍼의 제조방법
- 제11항 또는 제12항에 있어서, 웨이퍼의 표면층에서 격자간 산소를 외방확산하여 웨이퍼 표면에 DZ층(무결함층)을 형성하도록, 초기 단계에 1100℃ 이상의 고온열처리를 행하는 것을 특징으로 하는 실리콘 웨이퍼의 제조방법
- 제11항 내지 제13항 중 어느 한 항에 있어서, 상기 실리콘 웨이퍼의 산소석출 열처리는, 상기 웨이퍼의 최종연마전에 행하는 것을 특징으로 하는 실리콘 웨이퍼의 제조방법
- 제11항 내지 제14항 중 어느 한 항의 제조방법으로 제조된 실리콘 웨이퍼
- 웨이퍼중 격자간 산소농도가 8ppma 이하이고 산소석출물밀도가 1×108~2×1010개/㎤인 실리콘 웨이퍼
- 제16항에 있어서, 상기 격자간 산소농도가 6ppma 이하인 것을 특징으로 하는 실리콘 웨이퍼
- 제16항 또는 제17항에 있어서, 상기 실리콘 웨이퍼중 산소석출물이, 200nm 이상의 크기를 갖는 다면체, 또는 230nm 이상의 크기를 갖는 판상체인 것을 특징으로 하는 실리콘 웨이퍼
- 제2항 내지 제6항, 그리고 제15항 내지 제18항 중 어느 한 항의 실리콘 웨이퍼 표면에 형성된 에피텍셜층을 포함하는 에피텍셜 웨이퍼
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11/70963 | 1999-03-16 | ||
JP7096399 | 1999-03-16 | ||
JP11/241370 | 1999-08-27 | ||
JP24137099 | 1999-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010071250A true KR20010071250A (ko) | 2001-07-28 |
KR100701341B1 KR100701341B1 (ko) | 2007-03-29 |
Family
ID=26412077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007012698A KR100701341B1 (ko) | 1999-03-16 | 2000-02-25 | 실리콘 웨이퍼의 제조방법 및 실리콘 웨이퍼 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6544656B1 (ko) |
EP (2) | EP1087041B1 (ko) |
JP (1) | JP3750526B2 (ko) |
KR (1) | KR100701341B1 (ko) |
DE (1) | DE60041309D1 (ko) |
TW (1) | TWI233456B (ko) |
WO (1) | WO2000055397A1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829767B1 (ko) * | 2002-04-26 | 2008-05-16 | 가부시키가이샤 섬코 | 고저항 실리콘 웨이퍼 및 이의 제조방법 |
KR100969588B1 (ko) * | 2007-03-20 | 2010-07-12 | 가부시키가이샤 사무코 | Soi 웨이퍼 및 그 제조 방법 |
KR101524913B1 (ko) * | 2012-03-26 | 2015-06-01 | 글로벌웨어퍼스 재팬 가부시키가이샤 | 실리콘 웨이퍼 |
KR20210125942A (ko) * | 2020-04-09 | 2021-10-19 | 가부시키가이샤 사무코 | 실리콘 웨이퍼 및 그의 제조 방법 |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK195886A (da) * | 1986-04-29 | 1987-10-30 | Niels Hvilsted | Arbejdscylinder med stempel og med en magnetisk anordning til bestemmelse af en stempelposition |
DE60041309D1 (de) | 1999-03-16 | 2009-02-26 | Shinetsu Handotai Kk | Herstellungsverfahren für siliziumwafer und siliziumwafer |
JP4605876B2 (ja) | 2000-09-20 | 2011-01-05 | 信越半導体株式会社 | シリコンウエーハおよびシリコンエピタキシャルウエーハの製造方法 |
JP4463957B2 (ja) | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
JP2002184779A (ja) * | 2000-12-13 | 2002-06-28 | Shin Etsu Handotai Co Ltd | アニールウェーハの製造方法及びアニールウェーハ |
US7081422B2 (en) * | 2000-12-13 | 2006-07-25 | Shin-Etsu Handotai Co., Ltd. | Manufacturing process for annealed wafer and annealed wafer |
JP2002289820A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Simox基板の製造方法およびsimox基板 |
WO2002084728A1 (en) * | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
KR100745312B1 (ko) * | 2001-04-10 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 고저항율의 초크랄스키 실리콘 내의 열적 도너 형성의 제어 |
CN100446196C (zh) | 2001-06-22 | 2008-12-24 | Memc电子材料有限公司 | 通过离子注入产生具有本征吸除的绝缘体衬底硅结构的方法 |
EP1983562A2 (en) * | 2001-07-10 | 2008-10-22 | Shin-Etsu Handotai Company Limited | Silicon wafer manufacturing method |
JP2003068744A (ja) * | 2001-08-30 | 2003-03-07 | Shin Etsu Handotai Co Ltd | シリコンウエーハの製造方法及びシリコンウエーハ並びにsoiウエーハ |
US6565652B1 (en) | 2001-12-06 | 2003-05-20 | Seh America, Inc. | High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method |
US6669775B2 (en) | 2001-12-06 | 2003-12-30 | Seh America, Inc. | High resistivity silicon wafer produced by a controlled pull rate czochralski method |
US6673147B2 (en) | 2001-12-06 | 2004-01-06 | Seh America, Inc. | High resistivity silicon wafer having electrically inactive dopant and method of producing same |
US6583024B1 (en) | 2001-12-06 | 2003-06-24 | Seh America, Inc. | High resistivity silicon wafer with thick epitaxial layer and method of producing same |
US6669777B2 (en) | 2001-12-06 | 2003-12-30 | Seh America, Inc. | Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication |
JP2003204048A (ja) * | 2002-01-09 | 2003-07-18 | Shin Etsu Handotai Co Ltd | Soiウエーハの製造方法及びsoiウエーハ |
WO2003088346A1 (en) * | 2002-04-10 | 2003-10-23 | Memc Electronic Materials, Inc. | Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer |
EP1879224A3 (en) | 2002-04-10 | 2008-10-29 | MEMC Electronic Materials, Inc. | Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer |
FR2838865B1 (fr) * | 2002-04-23 | 2005-10-14 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee |
JP2007235153A (ja) * | 2002-04-26 | 2007-09-13 | Sumco Corp | 高抵抗シリコンウエーハ及びその製造方法 |
KR100685161B1 (ko) * | 2002-07-17 | 2007-02-22 | 가부시키가이샤 섬코 | 고저항 실리콘 웨이퍼 및 이의 제조방법 |
JP2004111722A (ja) * | 2002-09-19 | 2004-04-08 | Toshiba Corp | 半導体装置 |
JP4154471B2 (ja) * | 2002-11-15 | 2008-09-24 | 富士通株式会社 | 半導体装置の製造方法 |
KR100481476B1 (ko) * | 2002-11-19 | 2005-04-07 | 주식회사 실트론 | 어닐 웨이퍼 및 그 제조 방법 |
US7112509B2 (en) | 2003-05-09 | 2006-09-26 | Ibis Technology Corporation | Method of producing a high resistivity SIMOX silicon substrate |
JP3985768B2 (ja) | 2003-10-16 | 2007-10-03 | 株式会社Sumco | 高抵抗シリコンウェーハの製造方法 |
WO2005038899A1 (ja) * | 2003-10-21 | 2005-04-28 | Sumco Corporation | 高抵抗シリコンウェーハの製造方法、並びにエピタキシャルウェーハおよびsoiウェーハの製造方法 |
FR2867607B1 (fr) * | 2004-03-10 | 2006-07-14 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat pour la microelectronique, l'opto-electronique et l'optique avec limitaton des lignes de glissement et substrat correspondant |
JP2005333090A (ja) * | 2004-05-21 | 2005-12-02 | Sumco Corp | P型シリコンウェーハおよびその熱処理方法 |
JP2005340348A (ja) * | 2004-05-25 | 2005-12-08 | Sumco Corp | Simox基板の製造方法及び該方法により得られるsimox基板 |
US7902042B2 (en) | 2004-09-13 | 2011-03-08 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing SOI wafer and thus-manufactured SOI wafer |
JP4826994B2 (ja) * | 2004-09-13 | 2011-11-30 | 信越半導体株式会社 | Soiウェーハの製造方法 |
JP4667030B2 (ja) * | 2004-12-10 | 2011-04-06 | キヤノン株式会社 | 固体撮像装置用の半導体基板とその製造方法 |
US7485928B2 (en) | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
JP4715470B2 (ja) * | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
JP5358189B2 (ja) * | 2006-01-20 | 2013-12-04 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | 酸素含有半導体ウェハの処理方法 |
DE102006002903A1 (de) * | 2006-01-20 | 2007-08-02 | Infineon Technologies Austria Ag | Verfahren zur Behandlung eines Sauerstoff enthaltenden Halbleiterwafers und Halbleiterbauelement |
FR2896618B1 (fr) | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite |
JP5103745B2 (ja) * | 2006-01-31 | 2012-12-19 | 株式会社Sumco | 高周波ダイオードおよびその製造方法 |
JP5076326B2 (ja) | 2006-01-31 | 2012-11-21 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
EP1835533B1 (en) * | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
JP2008004900A (ja) * | 2006-06-26 | 2008-01-10 | Sumco Corp | 貼り合わせウェーハの製造方法 |
TW200818327A (en) * | 2006-09-29 | 2008-04-16 | Sumco Techxiv Corp | Silicon wafer heat treatment method |
ATE518241T1 (de) * | 2007-01-24 | 2011-08-15 | Soitec Silicon On Insulator | Herstellungsverfahren für wafer aus silizium auf isolator und entsprechender wafer |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
US8128749B2 (en) * | 2007-10-04 | 2012-03-06 | International Business Machines Corporation | Fabrication of SOI with gettering layer |
JP5137670B2 (ja) * | 2008-04-23 | 2013-02-06 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法 |
JP2010034303A (ja) * | 2008-07-29 | 2010-02-12 | Sumco Corp | 半導体ウェーハの製造方法 |
JP5537802B2 (ja) * | 2008-12-26 | 2014-07-02 | ジルトロニック アクチエンゲゼルシャフト | シリコンウエハの製造方法 |
US8263484B2 (en) | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
EP2722423B1 (en) * | 2009-03-25 | 2017-01-11 | Sumco Corporation | Method of manufacturing a silicon wafer |
WO2011096489A1 (ja) * | 2010-02-08 | 2011-08-11 | 株式会社Sumco | シリコンウェーハ及びその製造方法、並びに、半導体デバイスの製造方法 |
JP5510256B2 (ja) * | 2010-10-06 | 2014-06-04 | 株式会社Sumco | シリコンウェーハの製造方法 |
US8476146B2 (en) | 2010-12-03 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing wafer distortion through a low CTE layer |
US9123671B2 (en) | 2010-12-30 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon wafer strength enhancement |
GB2489923A (en) * | 2011-04-06 | 2012-10-17 | Isis Innovation | Processing a silicon wafer for a high frequency electronic circuit |
US20150037967A1 (en) | 2011-04-06 | 2015-02-05 | Peter Wilshaw | Controlling impurities in a wafer for an electronic circuit |
JP5849878B2 (ja) * | 2012-07-17 | 2016-02-03 | 信越半導体株式会社 | シリコン単結晶育成方法 |
CN104704608B (zh) * | 2012-09-13 | 2017-03-22 | 松下知识产权经营株式会社 | 氮化物半导体结构物 |
FR2997096B1 (fr) * | 2012-10-23 | 2014-11-28 | Commissariat Energie Atomique | Procede de formation d'un lingot en silicium de resistivite uniforme |
KR101464566B1 (ko) * | 2013-02-21 | 2014-11-24 | 주식회사 엘지실트론 | 실리콘 웨이퍼 |
US9425063B2 (en) * | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
JP5938113B1 (ja) | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
FR3037438B1 (fr) | 2015-06-09 | 2017-06-16 | Soitec Silicon On Insulator | Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges |
JP6447439B2 (ja) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
CN105543951B (zh) * | 2016-01-21 | 2019-01-01 | 浙江金瑞泓科技股份有限公司 | 一种在高COP硅单晶衬底上制备200mm-300mm低缺陷外延片的方法 |
FR3051968B1 (fr) * | 2016-05-25 | 2018-06-01 | Soitec | Procede de fabrication d'un substrat semi-conducteur a haute resistivite |
CN116314384A (zh) | 2016-06-08 | 2023-06-23 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
DE112017003436T5 (de) * | 2016-07-06 | 2019-03-21 | Tokuyama Corporation | Einkristalliner, plattenförmiger Siliziumkörper und Verfahren zu dessen Herstellung |
FR3058561B1 (fr) | 2016-11-04 | 2018-11-02 | Soitec | Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif |
KR102626492B1 (ko) * | 2016-11-14 | 2024-01-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지의 제조 방법 및 고광전변환효율 태양전지 |
JP6696917B2 (ja) | 2017-01-18 | 2020-05-20 | 信越化学工業株式会社 | 複合基板の製造方法 |
FR3062238A1 (fr) | 2017-01-26 | 2018-07-27 | Soitec | Support pour une structure semi-conductrice |
FR3064820B1 (fr) | 2017-03-31 | 2019-11-29 | Soitec | Procede d'ajustement de l'etat de contrainte d'un film piezoelectrique |
JP2019094224A (ja) | 2017-11-21 | 2019-06-20 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
WO2020008116A1 (fr) | 2018-07-05 | 2020-01-09 | Soitec | Substrat pour un dispositif integre radioafrequence et son procede de fabrication |
US10943813B2 (en) | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
JP7345245B2 (ja) * | 2018-11-13 | 2023-09-15 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
FR3098642B1 (fr) | 2019-07-12 | 2021-06-11 | Soitec Silicon On Insulator | procédé de fabrication d'une structure comprenant une couche mince reportée sur un support muni d’une couche de piégeage de charges |
US11885036B2 (en) | 2019-08-09 | 2024-01-30 | Leading Edge Equipment Technologies, Inc. | Producing a ribbon or wafer with regions of low oxygen concentration |
JP2020120128A (ja) * | 2020-04-23 | 2020-08-06 | 信越化学工業株式会社 | 複合基板 |
JP7347318B2 (ja) * | 2020-04-28 | 2023-09-20 | 信越半導体株式会社 | 貼り合わせsoiウェーハのベースウェーハの抵抗率測定方法 |
FR3113184B1 (fr) | 2020-07-28 | 2022-09-16 | Soitec Silicon On Insulator | Procede de preparation d’un substrat support, et procede de report d’une couche mince sur ce substrat support |
WO2022023630A1 (fr) | 2020-07-28 | 2022-02-03 | Soitec | Procede de report d'une couche mince sur un substrat support muni d'une couche de piegeage de charges |
FR3121548B1 (fr) | 2021-03-30 | 2024-02-16 | Soitec Silicon On Insulator | Procede de preparation d’un substrat avance, notamment pour des applications photoniques |
FR3119929B1 (fr) * | 2021-02-15 | 2023-11-03 | Soitec Silicon On Insulator | Procede de fabrication d’une structure adaptee pour les applications radiofrequences, et substrat support pour ladite structure |
FR3129029B1 (fr) | 2021-11-09 | 2023-09-29 | Soitec Silicon On Insulator | Procede de preparation d’un substrat support muni d’une couche de piegeage de charges |
FR3129028B1 (fr) | 2021-11-09 | 2023-11-10 | Soitec Silicon On Insulator | Procede de preparation d’un substrat support muni d’une couche de piegeage de charges |
FR3137493A1 (fr) | 2022-06-29 | 2024-01-05 | Soitec | Procede de fabrication d’une structure comportant une couche barriere a la diffusion d’especes atomiques |
FR3137490A1 (fr) | 2022-07-04 | 2024-01-05 | Soitec | Procede de fabrication d’une structure comportant une couche barriere a la diffusion d’especes atomiques |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0615998B2 (ja) * | 1986-09-12 | 1994-03-02 | 三菱重工業株式会社 | 排煙拡散試験法 |
JPH0810695B2 (ja) | 1986-10-02 | 1996-01-31 | ソニー株式会社 | 半導体基板の製法 |
US5198371A (en) * | 1990-09-24 | 1993-03-30 | Biota Corp. | Method of making silicon material with enhanced surface mobility by hydrogen ion implantation |
JP2732967B2 (ja) | 1991-08-30 | 1998-03-30 | 信越化学工業株式会社 | 高抵抗シリコンウエハ−の製造方法 |
US5418172A (en) * | 1993-06-29 | 1995-05-23 | Memc Electronic Materials S.P.A. | Method for detecting sources of contamination in silicon using a contamination monitor wafer |
JP3232168B2 (ja) * | 1993-07-02 | 2001-11-26 | 三菱電機株式会社 | 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置 |
JPH07235507A (ja) | 1994-02-25 | 1995-09-05 | Toshiba Corp | 半導体装置の製造方法 |
JP2895743B2 (ja) * | 1994-03-25 | 1999-05-24 | 信越半導体株式会社 | Soi基板の製造方法 |
JP3474261B2 (ja) | 1994-05-17 | 2003-12-08 | 東京エレクトロン株式会社 | 熱処理方法 |
JPH0810695A (ja) | 1994-07-04 | 1996-01-16 | Sekisui Chem Co Ltd | 防曇性被覆物品の製造方法 |
JPH09190954A (ja) | 1996-01-10 | 1997-07-22 | Sumitomo Sitix Corp | 半導体基板およびその製造方法 |
JPH09251961A (ja) | 1996-03-15 | 1997-09-22 | Toshiba Corp | 熱処理用ボート |
JPH10150048A (ja) | 1996-11-15 | 1998-06-02 | Sumitomo Sitix Corp | 半導体基板 |
KR100240023B1 (ko) * | 1996-11-29 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼 |
JPH11314997A (ja) * | 1998-05-01 | 1999-11-16 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶ウェーハの製造方法 |
DE60041309D1 (de) | 1999-03-16 | 2009-02-26 | Shinetsu Handotai Kk | Herstellungsverfahren für siliziumwafer und siliziumwafer |
-
2000
- 2000-02-25 DE DE60041309T patent/DE60041309D1/de not_active Expired - Lifetime
- 2000-02-25 WO PCT/JP2000/001124 patent/WO2000055397A1/ja active IP Right Grant
- 2000-02-25 KR KR1020007012698A patent/KR100701341B1/ko active IP Right Grant
- 2000-02-25 JP JP2000605810A patent/JP3750526B2/ja not_active Expired - Fee Related
- 2000-02-25 US US09/674,841 patent/US6544656B1/en not_active Expired - Lifetime
- 2000-02-25 EP EP00905367A patent/EP1087041B1/en not_active Expired - Lifetime
- 2000-02-25 EP EP09000023.3A patent/EP2037009B1/en not_active Expired - Lifetime
- 2000-03-04 TW TW089103913A patent/TWI233456B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829767B1 (ko) * | 2002-04-26 | 2008-05-16 | 가부시키가이샤 섬코 | 고저항 실리콘 웨이퍼 및 이의 제조방법 |
KR100969588B1 (ko) * | 2007-03-20 | 2010-07-12 | 가부시키가이샤 사무코 | Soi 웨이퍼 및 그 제조 방법 |
KR101524913B1 (ko) * | 2012-03-26 | 2015-06-01 | 글로벌웨어퍼스 재팬 가부시키가이샤 | 실리콘 웨이퍼 |
KR20210125942A (ko) * | 2020-04-09 | 2021-10-19 | 가부시키가이샤 사무코 | 실리콘 웨이퍼 및 그의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100701341B1 (ko) | 2007-03-29 |
WO2000055397A1 (fr) | 2000-09-21 |
DE60041309D1 (de) | 2009-02-26 |
EP2037009B1 (en) | 2013-07-31 |
EP2037009A2 (en) | 2009-03-18 |
JP3750526B2 (ja) | 2006-03-01 |
EP2037009A3 (en) | 2011-10-12 |
US6544656B1 (en) | 2003-04-08 |
EP1087041B1 (en) | 2009-01-07 |
EP1087041A4 (en) | 2007-02-21 |
TWI233456B (en) | 2005-06-01 |
EP1087041A1 (en) | 2001-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100701341B1 (ko) | 실리콘 웨이퍼의 제조방법 및 실리콘 웨이퍼 | |
KR100733111B1 (ko) | 접합 soi 웨이퍼의 제조방법 및 접합 soi 웨이퍼 | |
KR100573473B1 (ko) | 실리콘 웨이퍼 및 그 제조방법 | |
JP5188673B2 (ja) | Igbt用のシリコンウェーハ及びその製造方法 | |
EP0948037B1 (en) | Method for manufacturing a silicon epitaxial wafer | |
KR100841062B1 (ko) | 실리콘 웨이퍼와 실리콘 에피택셜 웨이퍼 및 이들의 제조방법 | |
KR100319413B1 (ko) | 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법 | |
KR20070083411A (ko) | Igbt용의 실리콘 단결정 웨이퍼 및 igbt용의실리콘 단결정 웨이퍼의 제조방법 | |
KR100850333B1 (ko) | 아닐 웨이퍼의 제조방법 및 아닐 웨이퍼 | |
JP3381816B2 (ja) | 半導体基板の製造方法 | |
KR20060040733A (ko) | 웨이퍼의 제조방법 | |
JP4013276B2 (ja) | シリコンエピタキシャルウェーハの製造方法 | |
US20110052923A1 (en) | Method of producing epitaxial wafer as well as epitaxial wafer | |
KR100625822B1 (ko) | 실리콘 웨이퍼 및 그의 제조 방법 | |
JPH10223641A (ja) | 半導体シリコンエピタキシャルウェーハ及び半導体デバイスの製造方法 | |
EP0867928A2 (en) | Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method | |
JPH11204534A (ja) | シリコンエピタキシャルウェーハの製造方法 | |
EP2159828B1 (en) | Silicon wafer and method for producing the same | |
KR100704945B1 (ko) | 실리콘 웨이퍼 및 그 제조방법 | |
JP4385539B2 (ja) | シリコン単結晶ウェーハの熱処理方法 | |
WO2021166895A1 (ja) | 半導体シリコンウェーハの製造方法 | |
JP3944958B2 (ja) | シリコンエピタキシャルウェーハとその製造方法 | |
CN107154354B (zh) | 晶圆热处理的方法 | |
CN107154353B (zh) | 晶圆热处理的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130304 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140228 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150224 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160219 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170221 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180302 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190305 Year of fee payment: 13 |