JP3985768B2 - 高抵抗シリコンウェーハの製造方法 - Google Patents
高抵抗シリコンウェーハの製造方法 Download PDFInfo
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- JP3985768B2 JP3985768B2 JP2003355780A JP2003355780A JP3985768B2 JP 3985768 B2 JP3985768 B2 JP 3985768B2 JP 2003355780 A JP2003355780 A JP 2003355780A JP 2003355780 A JP2003355780 A JP 2003355780A JP 3985768 B2 JP3985768 B2 JP 3985768B2
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- Prior art keywords
- oxygen
- wafer
- heat treatment
- resistivity
- inversion
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- 238000004519 manufacturing process Methods 0.000 title claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 29
- 239000010703 silicon Substances 0.000 title claims description 29
- 229910052710 silicon Inorganic materials 0.000 title claims description 29
- 239000001301 oxygen Substances 0.000 claims description 151
- 229910052760 oxygen Inorganic materials 0.000 claims description 151
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 149
- 238000010438 heat treatment Methods 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 35
- 239000002244 precipitate Substances 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 19
- 230000006911 nucleation Effects 0.000 claims description 9
- 238000010899 nucleation Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 120
- 238000001556 precipitation Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012298 atmosphere Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 238000011282 treatment Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000005247 gettering Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
(1)デバイス製造の工程における熱処理がおこなわれたとき、サーマルドナー発生に起因するp/n反転部を、デバイス活性領域およびそれに接して形成される空乏層領域には接しない深さに発生させるように、抵抗率100Ωcm以上で、炭素を0.5×1016〜32×1016atoms/cm3(ASTM F123−1981)含有する、チョクラルスキー法によるp型の単結晶から得られたウェーハに酸素外方拡散熱処理を施すことを特徴とする高抵抗シリコンウェーハの製造方法である。
(2)上記(1)の高抵抗シリコンウェーハの製造方法では、前記酸素外方拡散熱処理を施した後、さらに酸素析出核形成熱処理および酸素析出物成長熱処理を施すのが望ましい。
A: とくに酸素外方拡散熱処理は施さないもの
B: 1200℃で1時間、水素中にて加熱処理をおこなったもの
C: 1200℃で1時間の水素中加熱処理後、さらに3%の酸素を含む窒素ガス中に て、700℃で4時間の加熱をおこない、次いで1000℃で16時間をおこな ったもの
の三種のウェーハを作製した。これらのウェーハにて、図4に示すCMOSの製造工程の熱履歴に対応させた熱処理をおこなった後、深さ方向の抵抗率分布を広がり抵抗測定により求めた。
3:p型ウェーハ(基板)、 4:n型ウェーハ(基板)
Claims (2)
- デバイス製造の工程における熱処理がおこなわれたとき、サーマルドナー発生に起因するp/n反転部を、デバイス活性領域およびそれに接して形成される空乏層領域には接しない深さに発生させるように、抵抗率100Ωcm以上で、炭素を0.5×1016〜32×1016atoms/cm3(ASTM F123−1981)含有する、チョクラルスキー法によるp型の単結晶から得られたウェーハに酸素外方拡散熱処理を施すことを特徴とする高抵抗シリコンウェーハの製造方法。
- 前記酸素外方拡散熱処理を施した後、さらに酸素析出核形成熱処理および酸素析出物成長熱処理を施すことを特徴とする請求項1に記載の高抵抗シリコンウェーハの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003355780A JP3985768B2 (ja) | 2003-10-16 | 2003-10-16 | 高抵抗シリコンウェーハの製造方法 |
US10/964,728 US7226571B2 (en) | 2003-10-16 | 2004-10-15 | High resistivity silicon wafer and method for fabricating the same |
Applications Claiming Priority (1)
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JP2003355780A JP3985768B2 (ja) | 2003-10-16 | 2003-10-16 | 高抵抗シリコンウェーハの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007121405A Division JP2007235166A (ja) | 2007-05-02 | 2007-05-02 | p型シリコンウェーハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005123351A JP2005123351A (ja) | 2005-05-12 |
JP3985768B2 true JP3985768B2 (ja) | 2007-10-03 |
Family
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JP2003355780A Expired - Lifetime JP3985768B2 (ja) | 2003-10-16 | 2003-10-16 | 高抵抗シリコンウェーハの製造方法 |
Country Status (2)
Country | Link |
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US (1) | US7226571B2 (ja) |
JP (1) | JP3985768B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263484B2 (en) | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
Families Citing this family (19)
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---|---|---|---|---|
JP4832067B2 (ja) * | 2005-02-01 | 2011-12-07 | 東京エレクトロン株式会社 | シリコン部材およびその製造方法 |
JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
JP4989797B2 (ja) * | 2006-03-30 | 2012-08-01 | 新電元工業株式会社 | Igbtの製造方法 |
US20080135988A1 (en) * | 2006-12-07 | 2008-06-12 | Maxim Integrated Products, Inc. | Method to reduce semiconductor device leakage |
FR2929755B1 (fr) * | 2008-04-03 | 2011-04-22 | Commissariat Energie Atomique | Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers |
KR20100036155A (ko) * | 2008-09-29 | 2010-04-07 | 매그나칩 반도체 유한회사 | 실리콘 웨이퍼 및 그의 제조방법 |
JP5922858B2 (ja) * | 2009-03-03 | 2016-05-24 | 株式会社Sumco | 高抵抗シリコンウェーハの製造方法 |
JP5922860B2 (ja) * | 2009-06-19 | 2016-05-24 | 株式会社Sumco | 高抵抗シリコンウェーハの製造方法 |
JP4685953B2 (ja) * | 2009-07-17 | 2011-05-18 | Dowaエレクトロニクス株式会社 | 横方向を電流導通方向とする電子デバイス用エピタキシャル基板およびその製造方法 |
JP2011054655A (ja) * | 2009-08-31 | 2011-03-17 | Sumco Corp | 高周波デバイス向けシリコンウェーハおよびその製造方法 |
FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
JP5505241B2 (ja) * | 2010-10-06 | 2014-05-28 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP6228462B2 (ja) * | 2011-03-16 | 2017-11-08 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドMemc Electronic Materials,Incorporated | ハンドルウエハ内に高抵抗率領域を有するシリコン・オン・インシュレータ構造体およびそのような構造体の製法 |
JP5440564B2 (ja) * | 2011-07-14 | 2014-03-12 | 信越半導体株式会社 | 結晶欠陥の検出方法 |
JP5772553B2 (ja) | 2011-12-06 | 2015-09-02 | 信越半導体株式会社 | シリコン単結晶の評価方法およびシリコン単結晶の製造方法 |
JP6164830B2 (ja) * | 2012-12-14 | 2017-07-19 | キヤノン株式会社 | 光電変換装置の製造方法 |
US20150294868A1 (en) * | 2014-04-15 | 2015-10-15 | Infineon Technologies Ag | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
JP2015008314A (ja) * | 2014-08-14 | 2015-01-15 | 株式会社Sumco | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
Family Cites Families (4)
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KR100396643B1 (ko) * | 1998-09-07 | 2003-10-17 | 엘지전자 주식회사 | 무선패킷데이터단말 |
JP2000100631A (ja) | 1998-09-22 | 2000-04-07 | Hitachi Media Electoronics Co Ltd | トランス |
EP1087041B1 (en) | 1999-03-16 | 2009-01-07 | Shin-Etsu Handotai Co., Ltd | Production method for silicon wafer and silicon wafer |
JP4804672B2 (ja) * | 2001-08-29 | 2011-11-02 | 富士通株式会社 | モバイルipネットワークシステム |
-
2003
- 2003-10-16 JP JP2003355780A patent/JP3985768B2/ja not_active Expired - Lifetime
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2004
- 2004-10-15 US US10/964,728 patent/US7226571B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263484B2 (en) | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20050127477A1 (en) | 2005-06-16 |
JP2005123351A (ja) | 2005-05-12 |
US7226571B2 (en) | 2007-06-05 |
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