KR102630954B1 - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

Info

Publication number
KR102630954B1
KR102630954B1 KR1020160148176A KR20160148176A KR102630954B1 KR 102630954 B1 KR102630954 B1 KR 102630954B1 KR 1020160148176 A KR1020160148176 A KR 1020160148176A KR 20160148176 A KR20160148176 A KR 20160148176A KR 102630954 B1 KR102630954 B1 KR 102630954B1
Authority
KR
South Korea
Prior art keywords
layer
source
film
slits
semiconductor device
Prior art date
Application number
KR1020160148176A
Other languages
English (en)
Korean (ko)
Other versions
KR20180051183A (ko
Inventor
이기홍
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020160148176A priority Critical patent/KR102630954B1/ko
Priority to US15/638,496 priority patent/US10192880B2/en
Priority to CN201710623984.2A priority patent/CN108063142B/zh
Priority to TW106129762A priority patent/TWI731155B/zh
Publication of KR20180051183A publication Critical patent/KR20180051183A/ko
Priority to US16/217,876 priority patent/US10553602B2/en
Application granted granted Critical
Publication of KR102630954B1 publication Critical patent/KR102630954B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020160148176A 2016-11-08 2016-11-08 반도체 장치 및 그 제조방법 KR102630954B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020160148176A KR102630954B1 (ko) 2016-11-08 2016-11-08 반도체 장치 및 그 제조방법
US15/638,496 US10192880B2 (en) 2016-11-08 2017-06-30 Semiconductor device and manufacturing method thereof
CN201710623984.2A CN108063142B (zh) 2016-11-08 2017-07-27 半导体装置及其制造方法
TW106129762A TWI731155B (zh) 2016-11-08 2017-08-31 半導體裝置及其製造方法
US16/217,876 US10553602B2 (en) 2016-11-08 2018-12-12 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160148176A KR102630954B1 (ko) 2016-11-08 2016-11-08 반도체 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20180051183A KR20180051183A (ko) 2018-05-16
KR102630954B1 true KR102630954B1 (ko) 2024-01-31

Family

ID=62064817

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160148176A KR102630954B1 (ko) 2016-11-08 2016-11-08 반도체 장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US10192880B2 (zh)
KR (1) KR102630954B1 (zh)
CN (1) CN108063142B (zh)
TW (1) TWI731155B (zh)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10559582B2 (en) * 2018-06-04 2020-02-11 Sandisk Technologies Llc Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same
KR102620598B1 (ko) * 2018-06-05 2024-01-04 삼성전자주식회사 3차원 반도체 소자
KR102487371B1 (ko) * 2018-06-22 2023-01-11 삼성전자주식회사 수직형 반도체 소자
US10854627B1 (en) * 2018-06-29 2020-12-01 Sandisk Technologies Llc Three-dimensional memory device containing a capped insulating source line core and method of making the same
KR20200033067A (ko) 2018-09-19 2020-03-27 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR102633034B1 (ko) 2018-10-02 2024-02-05 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR102666113B1 (ko) * 2018-10-08 2024-05-17 삼성전자주식회사 3차원 반도체 메모리 소자
US11121146B2 (en) * 2018-10-15 2021-09-14 Micron Technology, Inc. Forming terminations in stacked memory arrays
US10868032B2 (en) * 2018-10-15 2020-12-15 Micron Technology, Inc. Dielectric extensions in stacked memory arrays
KR102613951B1 (ko) * 2018-10-18 2023-12-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 지그재그 슬릿 구조를 갖는 3차원 메모리 장치 및 이를 형성하기 위한 방법
KR102598761B1 (ko) * 2018-11-02 2023-11-07 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조방법
KR102682440B1 (ko) * 2018-11-30 2024-07-05 삼성전자주식회사 수직형 메모리 장치
JP2022513730A (ja) 2018-12-07 2022-02-09 長江存儲科技有限責任公司 新規の３ｄ ｎａｎｄメモリデバイスおよびそれを形成する方法
KR102662190B1 (ko) * 2018-12-17 2024-05-02 에스케이하이닉스 주식회사 3차원 비휘발성 메모리 장치의 제조방법
US11056497B2 (en) * 2019-05-09 2021-07-06 Micron Technology, Inc. Memory arrays and methods used in forming a memory array
JP7427686B2 (ja) * 2019-06-17 2024-02-05 長江存儲科技有限責任公司 ゲート線スリットに支持構造を伴う三次元メモリデバイス、およびその三次元メモリデバイスを形成するための方法
CN110914989B (zh) 2019-06-17 2021-09-14 长江存储科技有限责任公司 不具有栅极线缝隙的三维存储器件及用于形成其的方法
CN110211965B (zh) * 2019-06-17 2020-06-23 长江存储科技有限责任公司 3d nand存储器及其形成方法
KR102679565B1 (ko) * 2019-07-08 2024-07-01 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법
KR20210008983A (ko) 2019-07-15 2021-01-26 삼성전자주식회사 3차원 반도체 소자
EP3921868B1 (en) * 2019-08-13 2024-01-31 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device with source structure and methods for forming the same
WO2021026756A1 (en) * 2019-08-13 2021-02-18 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device with source structure and methods for forming the same
US11805645B2 (en) 2019-08-16 2023-10-31 Micron Technology, Inc. Integrated assemblies having rugged material fill, and methods of forming integrated assemblies
US11075219B2 (en) 2019-08-20 2021-07-27 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
KR102706736B1 (ko) * 2019-08-22 2024-09-19 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
US11195848B2 (en) * 2019-08-25 2021-12-07 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11205654B2 (en) 2019-08-25 2021-12-21 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11563022B2 (en) 2019-08-25 2023-01-24 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11244955B2 (en) * 2019-08-25 2022-02-08 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
CN110600422B (zh) * 2019-08-28 2024-04-05 长江存储科技有限责任公司 3d nand闪存及制备方法
WO2021035738A1 (en) * 2019-08-30 2021-03-04 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device with source contacts connected by adhesion layer and methods for forming the same
US11342333B2 (en) * 2019-09-26 2022-05-24 Nanya Technology Corporation Semiconductor device
KR20210042759A (ko) 2019-10-10 2021-04-20 삼성전자주식회사 메모리 장치
US11011408B2 (en) 2019-10-11 2021-05-18 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
CN115224108A (zh) * 2019-10-12 2022-10-21 长江存储科技有限责任公司 三维存储器结构
US11195850B2 (en) 2019-10-18 2021-12-07 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11101210B2 (en) 2019-10-25 2021-08-24 Micron Technology, Inc. Methods for manufacturing a memory array having strings of memory cells comprising forming bridge material between memory blocks
US11094627B2 (en) * 2019-10-25 2021-08-17 Micron Technology, Inc. Methods used in forming a memory array comprising strings of memory cells
KR20210051275A (ko) * 2019-10-30 2021-05-10 삼성전자주식회사 수직형 메모리 장치
KR20210071307A (ko) * 2019-12-06 2021-06-16 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 제조 방법
CN111146209A (zh) * 2019-12-25 2020-05-12 长江存储科技有限责任公司 3d存储器件及其制造方法
US11094595B2 (en) 2019-12-27 2021-08-17 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11444093B2 (en) 2020-01-10 2022-09-13 Micron Technology, Inc. Memory arrays and methods of forming memory arrays
JP2022539396A (ja) * 2020-01-17 2022-09-08 長江存儲科技有限責任公司 メモリデバイス及び方法
KR102689644B1 (ko) 2020-01-20 2024-07-30 삼성전자주식회사 지지대를 갖는 반도체 소자들
KR20210103255A (ko) 2020-02-13 2021-08-23 삼성전자주식회사 3차원 비휘발성 메모리 소자 및 그 제조방법
WO2021168681A1 (en) * 2020-02-26 2021-09-02 Yangtze Memory Technologies Co., Ltd. Memory device and method for forming the same
CN111341786B (zh) * 2020-03-11 2023-07-28 长江存储科技有限责任公司 三维存储器及其制造方法
WO2021184357A1 (en) 2020-03-20 2021-09-23 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and fabricating methods thereof
KR102674073B1 (ko) 2020-03-23 2024-06-10 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리 디바이스의 계단 구조 및 이를 형성하기 위한 방법
WO2021189190A1 (en) 2020-03-23 2021-09-30 Yangtze Memory Technologies Co., Ltd. Staircase structure in three-dimensional memory device and method for forming the same
CN114586153A (zh) 2020-03-23 2022-06-03 长江存储科技有限责任公司 在三维存储器件中的阶梯结构及用于形成其的方法
KR20210136455A (ko) 2020-05-07 2021-11-17 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법
KR20210157791A (ko) * 2020-06-22 2021-12-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
CN113410245B (zh) * 2020-07-03 2022-07-19 长江存储科技有限责任公司 3d nand存储器及其形成方法
KR20220013252A (ko) 2020-07-24 2022-02-04 삼성전자주식회사 반도체 메모리 장치
KR20220016714A (ko) 2020-08-03 2022-02-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
JP7543028B2 (ja) 2020-08-20 2024-09-02 キオクシア株式会社 半導体記憶装置の製造方法
KR20220035541A (ko) * 2020-09-14 2022-03-22 에스케이하이닉스 주식회사 복수의 메모리 블록을 포함하는 반도체 메모리 장치 및 그 제조방법
JP2022051180A (ja) * 2020-09-18 2022-03-31 キオクシア株式会社 半導体記憶装置
KR20220040143A (ko) * 2020-09-23 2022-03-30 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
US11380707B2 (en) * 2020-12-09 2022-07-05 Sandisk Technologies Llc Three-dimensional memory device including backside trench support structures and methods of forming the same
US11737275B2 (en) * 2021-04-16 2023-08-22 Micron Technology, Inc. Microelectronic devices including filled slits and memory cell pillars, and related memory devices and electronic systems
KR20220153138A (ko) 2021-05-10 2022-11-18 삼성전자주식회사 반도체 장치 및 이를 포함하는 데이터 저장 시스템
JP2023001592A (ja) * 2021-06-21 2023-01-06 キオクシア株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US20230055230A1 (en) * 2021-08-19 2023-02-23 Sandisk Technologies Llc Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same
WO2023028845A1 (zh) * 2021-08-31 2023-03-09 长江存储科技有限责任公司 三维存储器的制备方法
CN113745229A (zh) * 2021-09-06 2021-12-03 长江存储科技有限责任公司 三维存储器及其制备方法
US20240155841A1 (en) * 2022-11-09 2024-05-09 Sandisk Technologies Llc Three-dimensional memory device containing multi-level support bridge structures and methods for forming the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570213B1 (en) * 2002-02-08 2003-05-27 Silicon Based Technology Corp. Self-aligned split-gate flash memory cell and its contactless NOR-type memory array
US6667510B2 (en) * 2002-02-19 2003-12-23 Silicon Based Technology Corp. Self-aligned split-gate flash memory cell and its contactless memory array
US8013389B2 (en) * 2008-11-06 2011-09-06 Samsung Electronics Co., Ltd. Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices
KR20120030193A (ko) * 2010-09-17 2012-03-28 삼성전자주식회사 3차원 반도체 장치의 제조 방법
JP6140400B2 (ja) * 2011-07-08 2017-05-31 エスケーハイニックス株式会社ＳＫ ｈｙｎｉｘ Ｉｎｃ． 半導体装置及びその製造方法
KR20140032238A (ko) * 2012-09-06 2014-03-14 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20140077500A (ko) * 2012-12-14 2014-06-24 에스케이하이닉스 주식회사 수직형 반도체 소자 및 그 제조 방법
KR102045288B1 (ko) 2013-01-17 2019-11-15 삼성전자주식회사 수직형 반도체 소자
JP2015028982A (ja) 2013-07-30 2015-02-12 株式会社東芝 不揮発性記憶装置およびその製造方法
KR20150029403A (ko) * 2013-09-10 2015-03-18 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
KR102170770B1 (ko) * 2014-03-03 2020-10-28 삼성전자주식회사 반도체 장치
KR20150116995A (ko) 2014-04-09 2015-10-19 삼성전자주식회사 수직형 메모리 장치
KR102190350B1 (ko) 2014-05-02 2020-12-11 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
CN104157654B (zh) * 2014-08-15 2017-06-06 中国科学院微电子研究所 三维存储器及其制造方法
KR102298605B1 (ko) * 2015-01-14 2021-09-06 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
KR102276535B1 (ko) * 2015-03-10 2021-07-13 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102344881B1 (ko) * 2015-03-31 2021-12-29 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
KR102357992B1 (ko) * 2015-05-26 2022-02-04 삼성전자주식회사 반도체 장치
KR102409748B1 (ko) * 2015-07-28 2022-06-17 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102440221B1 (ko) * 2015-09-09 2022-09-05 삼성전자주식회사 반도체 소자 및 이의 제조 방법
KR102451170B1 (ko) * 2015-09-22 2022-10-06 삼성전자주식회사 3차원 반도체 메모리 장치

Also Published As

Publication number Publication date
US10553602B2 (en) 2020-02-04
US20180130814A1 (en) 2018-05-10
TW201830670A (zh) 2018-08-16
US10192880B2 (en) 2019-01-29
KR20180051183A (ko) 2018-05-16
US20190115356A1 (en) 2019-04-18
CN108063142B (zh) 2022-04-22
CN108063142A (zh) 2018-05-22
TWI731155B (zh) 2021-06-21

Similar Documents

Publication Publication Date Title
KR102630954B1 (ko) 반도체 장치 및 그 제조방법
US11837639B2 (en) Semiconductor device and manufacturing method of semiconductor device
US10770475B2 (en) Semiconductor device and manufacturing method of semiconductor device
KR102543998B1 (ko) 반도체 장치 및 그 제조 방법
KR102632478B1 (ko) 반도체 장치
KR102424990B1 (ko) 반도체 장치 및 그 제조방법
US11557603B2 (en) Semiconductor devices
KR102588311B1 (ko) 반도체 장치 및 그 제조방법
KR102608833B1 (ko) 반도체 장치의 제조방법
KR102685508B1 (ko) 반도체 메모리 장치
US11974437B2 (en) Semiconductor device including data storage pattern
KR20160128129A (ko) 반도체 장치의 제조방법
US20230397415A1 (en) Semiconductor memory device and manufacturing method of the semiconductor memory device
KR20200060156A (ko) 반도체 장치의 제조방법
KR20200059636A (ko) 반도체 장치 및 그 제조방법
US12120879B2 (en) Semiconductor device and manufacturing method of semiconductor device
KR20220167688A (ko) 반도체 메모리 장치 및 그 제조방법
KR102717037B1 (ko) 반도체 메모리 장치 및 그 제조방법
KR20210052934A (ko) 반도체 메모리 장치 및 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right