KR101363377B1 - 무극성 질화 갈륨 박막의 전위 감소 - Google Patents

무극성 질화 갈륨 박막의 전위 감소 Download PDF

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KR101363377B1
KR101363377B1 KR1020047016456A KR20047016456A KR101363377B1 KR 101363377 B1 KR101363377 B1 KR 101363377B1 KR 1020047016456 A KR1020047016456 A KR 1020047016456A KR 20047016456 A KR20047016456 A KR 20047016456A KR 101363377 B1 KR101363377 B1 KR 101363377B1
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overgrowth
mask
plane
film
nonpolar
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KR20050000511A (ko
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마이클디. 크레이븐
스티븐피. 덴바아아스
제임스에스. 스펙
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더 리전츠 오브 더 유니버시티 오브 캘리포니아
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02612—Formation types
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)
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  • Recrystallisation Techniques (AREA)
KR1020047016456A 2002-04-15 2003-04-15 무극성 질화 갈륨 박막의 전위 감소 Expired - Fee Related KR101363377B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37290902P 2002-04-15 2002-04-15
US60/372,909 2002-04-15
PCT/US2003/011177 WO2003089696A1 (en) 2002-04-15 2003-04-15 Dislocation reduction in non-polar gallium nitride thin films

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KR1020117028367A Division KR20110132639A (ko) 2002-04-15 2003-04-15 무극성 질화 갈륨 박막의 전위 감소

Publications (2)

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KR20050000511A KR20050000511A (ko) 2005-01-05
KR101363377B1 true KR101363377B1 (ko) 2014-02-14

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KR1020047016456A Expired - Fee Related KR101363377B1 (ko) 2002-04-15 2003-04-15 무극성 질화 갈륨 박막의 전위 감소
KR1020047016454A Expired - Lifetime KR101288489B1 (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및이형구조 재료 및 장치
KR1020107019520A Expired - Lifetime KR101167590B1 (ko) 2002-04-15 2003-04-15 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막
KR1020117010086A Expired - Lifetime KR101317469B1 (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및 이형구조 재료 및 장치
KR1020127014158A Withdrawn KR20120080246A (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및 이형구조 재료 및 장치
KR1020117028367A Abandoned KR20110132639A (ko) 2002-04-15 2003-04-15 무극성 질화 갈륨 박막의 전위 감소
KR1020047016455A Expired - Lifetime KR100992960B1 (ko) 2002-04-15 2003-04-15 유기금속 화학기상 증착법에 의해 성장된 무극성 α면질화갈륨 박막

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KR1020047016454A Expired - Lifetime KR101288489B1 (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및이형구조 재료 및 장치
KR1020107019520A Expired - Lifetime KR101167590B1 (ko) 2002-04-15 2003-04-15 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막
KR1020117010086A Expired - Lifetime KR101317469B1 (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및 이형구조 재료 및 장치
KR1020127014158A Withdrawn KR20120080246A (ko) 2002-04-15 2003-04-15 무극성 질화(알루미늄, 붕소, 인듐, 갈륨) 양자우물 및 이형구조 재료 및 장치
KR1020117028367A Abandoned KR20110132639A (ko) 2002-04-15 2003-04-15 무극성 질화 갈륨 박막의 전위 감소
KR1020047016455A Expired - Lifetime KR100992960B1 (ko) 2002-04-15 2003-04-15 유기금속 화학기상 증착법에 의해 성장된 무극성 α면질화갈륨 박막

Country Status (6)

Country Link
US (7) US20030198837A1 (OSRAM)
EP (6) EP1495167A1 (OSRAM)
JP (12) JP5254521B2 (OSRAM)
KR (7) KR101363377B1 (OSRAM)
AU (3) AU2003223563A1 (OSRAM)
WO (3) WO2003089696A1 (OSRAM)

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US7208393B2 (en) * 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
EP1495167A1 (en) * 2002-04-15 2005-01-12 The Regents Of The University Of California NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
US6900067B2 (en) * 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4486506B2 (ja) * 2002-12-16 2010-06-23 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
JP2006521984A (ja) * 2003-03-18 2006-09-28 クリスタル フォトニクス，インコーポレイテッド Ｉｉｉ族の窒化物装置を製作する方法およびそのように製作された装置
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JP5096677B2 (ja) * 2003-04-15 2012-12-12 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非極性（Ａｌ、Ｂ、Ｉｎ、Ｇａ）Ｎ量子井戸
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US7504274B2 (en) * 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
KR20070013320A (ko) 2004-05-10 2007-01-30 더 리전트 오브 더 유니버시티 오브 캘리포니아 유기금속 화학기상증착법을 이용한 비극성 질화인듐갈륨박막들, 이중 구조들 및 소자들의 제조
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
US7956360B2 (en) * 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
US8227820B2 (en) * 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
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