JP5254521B2 - 非極性窒化ガリウム薄膜における転位の低減 - Google Patents

非極性窒化ガリウム薄膜における転位の低減 Download PDF

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JP5254521B2
JP5254521B2 JP2003586403A JP2003586403A JP5254521B2 JP 5254521 B2 JP5254521 B2 JP 5254521B2 JP 2003586403 A JP2003586403 A JP 2003586403A JP 2003586403 A JP2003586403 A JP 2003586403A JP 5254521 B2 JP5254521 B2 JP 5254521B2
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mask
polar
growth
overgrowth
gallium nitride
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JP2005522890A (ja
JP2005522890A5 (ja
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マイケル ディー． クレイブン，
スティーブン ピー． デンバーズ，
ジェームス エス． スペック，
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University of California
University of California Berkeley
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University of California San Diego UCSD
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2003586403A 2002-04-15 2003-04-15 非極性窒化ガリウム薄膜における転位の低減 Expired - Lifetime JP5254521B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37290902P 2002-04-15 2002-04-15
US60/372,909 2002-04-15
PCT/US2003/011177 WO2003089696A1 (en) 2002-04-15 2003-04-15 Dislocation reduction in non-polar gallium nitride thin films

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JP2005522890A JP2005522890A (ja) 2005-07-28
JP2005522890A5 JP2005522890A5 (ja) 2009-09-17
JP5254521B2 true JP5254521B2 (ja) 2013-08-07

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JP2003586401A Pending JP2005522888A (ja) 2002-04-15 2003-04-15 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2003586402A Expired - Lifetime JP5046475B2 (ja) 2002-04-15 2003-04-15 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2003586403A Expired - Lifetime JP5254521B2 (ja) 2002-04-15 2003-04-15 非極性窒化ガリウム薄膜における転位の低減
JP2009181101A Pending JP2009260386A (ja) 2002-04-15 2009-08-03 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2009181100A Withdrawn JP2009295994A (ja) 2002-04-15 2009-08-03 非極性窒化ガリウム薄膜における転位の低減
JP2010044770A Withdrawn JP2010135845A (ja) 2002-04-15 2010-03-01 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2010250340A Withdrawn JP2011040789A (ja) 2002-04-15 2010-11-08 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2013213604A Pending JP2014060408A (ja) 2002-04-15 2013-10-11 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2014133816A Withdrawn JP2014195125A (ja) 2002-04-15 2014-06-30 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2014224170A Withdrawn JP2015061818A (ja) 2002-04-15 2014-11-04 非極性窒化ガリウム薄膜における転位の低減
JP2016148176A Withdrawn JP2017011278A (ja) 2002-04-15 2016-07-28 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2017249085A Pending JP2018064122A (ja) 2002-04-15 2017-12-26 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス

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JP2003586402A Expired - Lifetime JP5046475B2 (ja) 2002-04-15 2003-04-15 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜

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JP2009181100A Withdrawn JP2009295994A (ja) 2002-04-15 2009-08-03 非極性窒化ガリウム薄膜における転位の低減
JP2010044770A Withdrawn JP2010135845A (ja) 2002-04-15 2010-03-01 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2010250340A Withdrawn JP2011040789A (ja) 2002-04-15 2010-11-08 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2013213604A Pending JP2014060408A (ja) 2002-04-15 2013-10-11 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2014133816A Withdrawn JP2014195125A (ja) 2002-04-15 2014-06-30 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2014224170A Withdrawn JP2015061818A (ja) 2002-04-15 2014-11-04 非極性窒化ガリウム薄膜における転位の低減
JP2016148176A Withdrawn JP2017011278A (ja) 2002-04-15 2016-07-28 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
JP2017249085A Pending JP2018064122A (ja) 2002-04-15 2017-12-26 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス

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US (7) US6900070B2 (OSRAM)
EP (6) EP2316989A3 (OSRAM)
JP (12) JP2005522888A (OSRAM)
KR (7) KR101317469B1 (OSRAM)
AU (3) AU2003230876A1 (OSRAM)
WO (3) WO2003089695A1 (OSRAM)

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US7361341B2 (en) * 2001-05-25 2008-04-22 Human Genome Sciences, Inc. Methods of treating cancer using antibodies that immunospecifically bind to trail receptors
JP4932121B2 (ja) * 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
JP2005522888A (ja) * 2002-04-15 2005-07-28 ザ リージェント オブ ザ ユニバーシティ オブ カリフォルニア 非極性（Ａｌ，Ｂ，Ｉｎ，Ｇａ）Ｎ量子井戸、ならびにヘテロ構造材料およびデバイス
US7208393B2 (en) * 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US6900067B2 (en) * 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
KR101372698B1 (ko) * 2002-12-16 2014-03-11 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
WO2004084275A2 (en) * 2003-03-18 2004-09-30 Crystal Photonics, Incorporated Method for making group iii nitride devices and devices produced thereby
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
CN1894771B (zh) 2003-04-15 2012-07-04 加利福尼亚大学董事会 非极性(Al,B,In,Ga)N量子阱
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7198970B2 (en) * 2004-01-23 2007-04-03 The United States Of America As Represented By The Secretary Of The Navy Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
US7408201B2 (en) * 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
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