KR100500863B1 - Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자 - Google Patents

Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자 Download PDF

Info

Publication number
KR100500863B1
KR100500863B1 KR10-2002-7008100A KR20027008100A KR100500863B1 KR 100500863 B1 KR100500863 B1 KR 100500863B1 KR 20027008100 A KR20027008100 A KR 20027008100A KR 100500863 B1 KR100500863 B1 KR 100500863B1
Authority
KR
South Korea
Prior art keywords
compound semiconductor
group iii
iii nitride
nitride compound
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-7008100A
Other languages
English (en)
Korean (ko)
Other versions
KR20020073484A (ko
Inventor
고이케마사요시
고지마아키라
히라마쓰도시오
데젠유타
Original Assignee
도요다 고세이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도요다 고세이 가부시키가이샤 filed Critical 도요다 고세이 가부시키가이샤
Publication of KR20020073484A publication Critical patent/KR20020073484A/ko
Application granted granted Critical
Publication of KR100500863B1 publication Critical patent/KR100500863B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR10-2002-7008100A 1999-12-24 2000-12-21 Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자 Expired - Fee Related KR100500863B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36761399A JP2001185493A (ja) 1999-12-24 1999-12-24 Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JPJP-P-1999-00367613 1999-12-24

Publications (2)

Publication Number Publication Date
KR20020073484A KR20020073484A (ko) 2002-09-26
KR100500863B1 true KR100500863B1 (ko) 2005-07-14

Family

ID=18489757

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7008100A Expired - Fee Related KR100500863B1 (ko) 1999-12-24 2000-12-21 Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자

Country Status (8)

Country Link
US (1) US6830948B2 (enExample)
EP (1) EP1263031A1 (enExample)
JP (1) JP2001185493A (enExample)
KR (1) KR100500863B1 (enExample)
CN (1) CN1189920C (enExample)
AU (1) AU776768B2 (enExample)
CA (1) CA2398525A1 (enExample)
WO (1) WO2001048799A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
JP2003092426A (ja) * 2001-09-18 2003-03-28 Nichia Chem Ind Ltd 窒化物系化合物半導体発光素子およびその製造方法
KR100504180B1 (ko) * 2003-01-29 2005-07-28 엘지전자 주식회사 질화물 화합물 반도체의 결정성장 방법
DE10320160A1 (de) * 2003-02-14 2004-08-26 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterkörper und elektronischer Halbleiterkörper
TWI255052B (en) * 2003-02-14 2006-05-11 Osram Opto Semiconductors Gmbh Method to produce a number of semiconductor-bodies and electronic semiconductor-bodies
US20050006635A1 (en) * 2003-03-26 2005-01-13 Kyocera Corporation Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7579263B2 (en) * 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
KR100580751B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
TW200703463A (en) 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
JP5128075B2 (ja) * 2006-01-30 2013-01-23 浜松ホトニクス株式会社 化合物半導体基板、その製造方法及び半導体デバイス
KR20070079528A (ko) * 2006-02-02 2007-08-07 서울옵토디바이스주식회사 질화물 반도체 발광 다이오드 및 이의 제조 방법
WO2008073414A1 (en) * 2006-12-12 2008-06-19 The Regents Of The University Of California Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
TW200828624A (en) * 2006-12-27 2008-07-01 Epistar Corp Light-emitting diode and method for manufacturing the same
EP2126963A4 (en) * 2007-03-16 2011-03-16 Sebastian Lourdudoss SEMICONDUCTOR HETEROSTRUCTURES AND MANUFACTURE THEREOF
JP4714712B2 (ja) * 2007-07-04 2011-06-29 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
CN100530726C (zh) * 2007-11-30 2009-08-19 华南师范大学 Ⅲ-ⅴ族金属氧化物半导体发光场效应晶体管及其制备方法
JP2009277882A (ja) * 2008-05-14 2009-11-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8803189B2 (en) * 2008-08-11 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. III-V compound semiconductor epitaxy using lateral overgrowth
US8377796B2 (en) 2008-08-11 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. III-V compound semiconductor epitaxy from a non-III-V substrate
GB0911134D0 (en) * 2009-06-26 2009-08-12 Univ Surrey Optoelectronic devices
US8481991B2 (en) 2009-08-21 2013-07-09 The Regents Of The University Of California Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
KR20120055709A (ko) * 2009-08-21 2012-05-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 헤테로인터페이스에서 미스핏 전위들을 갖는 부분적으로 또는 완전히 완화된 합금들 상의 반극성 질화물계 소자들
GB2488587B (en) * 2011-03-03 2015-07-29 Seren Photonics Ltd Semiconductor devices and fabrication methods
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
TWI617045B (zh) * 2012-07-06 2018-03-01 晶元光電股份有限公司 具有奈米柱之發光元件及其製造方法
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
CN108565319B (zh) * 2013-01-25 2020-10-02 新世纪光电股份有限公司 氮化物半导体结构及半导体发光元件
US9064699B2 (en) 2013-09-30 2015-06-23 Samsung Electronics Co., Ltd. Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods
US9640422B2 (en) * 2014-01-23 2017-05-02 Intel Corporation III-N devices in Si trenches
WO2015163908A1 (en) * 2014-04-25 2015-10-29 The Texas State University-San Marcos Material selective regrowth structure and method
CN107170666A (zh) * 2017-05-25 2017-09-15 东南大学 一种非极性ⅲ族氮化物外延薄膜
CN109360875A (zh) * 2018-12-04 2019-02-19 西安赛富乐斯半导体科技有限公司 半导体构件及其制造方法
CN113964043B (zh) * 2020-07-20 2025-06-06 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构
CN113964252B (zh) * 2020-07-21 2024-09-24 苏州晶湛半导体有限公司 半导体结构及其制备方法
CN113380603B (zh) * 2021-05-18 2022-05-17 厦门大学 高硼组分二维iii族多元氮化物混合晶体及其制备方法
TW202439402A (zh) * 2023-03-30 2024-10-01 宸明科技股份有限公司 半導體元件及其製造方法

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143944B2 (enExample) 1972-03-15 1976-11-25
JPS51137393A (en) 1975-05-22 1976-11-27 Mitsubishi Electric Corp Manufacturing method for semiconductor light emitting device
JPS5534646A (en) 1978-08-30 1980-03-11 Sumitomo Metal Ind Ltd Heating method for furnace body in blowing-in of shaft furnace
JPS57115849A (en) 1981-01-12 1982-07-19 Fujitsu Ltd Manufacture of substrate for semiconductor device
JPS5833882A (ja) 1981-08-21 1983-02-28 Mitsubishi Electric Corp 発光ダイオ−ドの製造方法
JPH01316459A (ja) 1988-06-15 1989-12-21 Murata Mfg Co Ltd インラインスパッタリング装置およびその方法
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
JPH06105797B2 (ja) 1989-10-19 1994-12-21 昭和電工株式会社 半導体基板及びその製造方法
JP2623464B2 (ja) 1990-04-27 1997-06-25 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JPH0484418A (ja) 1990-07-27 1992-03-17 Nec Corp 異種基板上への３―ｖ族化合物半導体のヘテロエピタキシャル成長法
JPH04303920A (ja) 1991-03-29 1992-10-27 Nec Corp Ｉｖ族基板上の絶縁膜／ｉｉｉ　−ｖ族化合物半導体積層構造
JP2954743B2 (ja) 1991-05-30 1999-09-27 京セラ株式会社 半導体発光装置の製造方法
JPH05110206A (ja) 1991-10-16 1993-04-30 Kubota Corp 半導体発光素子の製造方法及びその製造装置
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH05283744A (ja) 1991-12-20 1993-10-29 Toshiba Corp 半導体素子
JP2751963B2 (ja) 1992-06-10 1998-05-18 日亜化学工業株式会社 窒化インジウムガリウム半導体の成長方法
JP3133182B2 (ja) 1992-11-27 2001-02-05 ヱスビー食品株式会社 飲料の渋味・苦味の改良方法
JPH07249830A (ja) 1994-03-10 1995-09-26 Hitachi Ltd 半導体発光素子の製造方法
JPH07273367A (ja) 1994-04-01 1995-10-20 Mitsubishi Cable Ind Ltd 半導体基板の製造方法および発光素子の製造方法
JP3974667B2 (ja) 1994-08-22 2007-09-12 ローム株式会社 半導体発光素子の製法
JPH0864791A (ja) 1994-08-23 1996-03-08 Matsushita Electric Ind Co Ltd エピタキシャル成長方法
JP3326545B2 (ja) 1994-09-30 2002-09-24 ローム株式会社 半導体発光素子
JPH08222812A (ja) 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JPH08274411A (ja) 1995-03-31 1996-10-18 Hitachi Ltd 半導体レーザ素子
DE69633203T2 (de) 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JP3396356B2 (ja) 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
US5798536A (en) * 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
FR2747064B1 (fr) 1996-04-03 1998-05-15 Air Liquide Procede et dispositif de reduction des emissions d'ozone produites lors d'une operation de soudage a l'arc sous gaz de protection
JP3139445B2 (ja) 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH11191657A (ja) 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
ATE550461T1 (de) 1997-04-11 2012-04-15 Nichia Corp Wachstumsmethode für einen nitrid-halbleiter
DE19715572A1 (de) * 1997-04-15 1998-10-22 Telefunken Microelectron Verfahren zum Herstellen von epitaktischen Schichten eines Verbindungshalbleiters auf einkristallinem Silizium und daraus hergestellte Leuchtdiode
JPH10321954A (ja) 1997-05-15 1998-12-04 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JP3551751B2 (ja) 1997-05-16 2004-08-11 日亜化学工業株式会社 窒化物半導体の成長方法
KR20010021496A (ko) * 1997-07-03 2001-03-15 추후제출 에피택셜 필름의 결함 제거 방법
JP3189877B2 (ja) 1997-07-11 2001-07-16 日本電気株式会社 低転位窒化ガリウムの結晶成長方法
JPH1143398A (ja) 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
JP3930161B2 (ja) 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
JPH11135770A (ja) 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd ３−５族化合物半導体とその製造方法および半導体素子
JPH11145519A (ja) 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
JP3491538B2 (ja) 1997-10-09 2004-01-26 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JPH11135832A (ja) 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP3456413B2 (ja) 1997-11-26 2003-10-14 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP3620269B2 (ja) 1998-02-27 2005-02-16 豊田合成株式会社 ＧａＮ系半導体素子の製造方法
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
JP3839580B2 (ja) 1998-03-09 2006-11-01 株式会社リコー 半導体基板の製造方法
JPH11274082A (ja) 1998-03-24 1999-10-08 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体およびその製造方法、およびｉｉｉ 族窒化物半導体装置
US6500257B1 (en) 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP3436128B2 (ja) 1998-04-28 2003-08-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JPH11330546A (ja) 1998-05-12 1999-11-30 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体およびその製造方法
JP4390090B2 (ja) 1998-05-18 2009-12-24 シャープ株式会社 ＧａＮ系結晶膜の製造方法
JP3460581B2 (ja) 1998-05-28 2003-10-27 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP4666295B2 (ja) 1998-07-14 2011-04-06 富士通株式会社 半導体レーザ及び半導体装置の製造方法
JP3316479B2 (ja) 1998-07-29 2002-08-19 三洋電機株式会社 半導体素子、半導体発光素子および半導体素子の製造方法
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
JP3987660B2 (ja) 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体構造とその製法および発光素子
JP2000044121A (ja) 1998-08-03 2000-02-15 Murata Mach Ltd 紡績機のスライバ案内クリール
JP3201475B2 (ja) 1998-09-14 2001-08-20 松下電器産業株式会社 半導体装置およびその製造方法
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
JP2000150959A (ja) 1998-11-18 2000-05-30 Hitachi Ltd 窒化ガリウム系化合物半導体発光素子
JP2000174393A (ja) 1998-12-04 2000-06-23 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体およびその製造方法、およびｉｉｉ族窒化物半導体装置
JP4304750B2 (ja) 1998-12-08 2009-07-29 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP3659050B2 (ja) 1998-12-21 2005-06-15 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP2000261106A (ja) 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及び光ディスク装置
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
JP3594826B2 (ja) * 1999-02-09 2004-12-02 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
KR100677683B1 (ko) 1999-03-17 2007-02-05 미츠비시 덴센 고교 가부시키가이샤 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법
JP4288743B2 (ja) * 1999-03-24 2009-07-01 日亜化学工業株式会社 窒化物半導体の成長方法
TW464953B (en) 1999-04-14 2001-11-21 Matsushita Electronics Corp Method of manufacturing III nitride base compound semiconductor substrate
JP4231189B2 (ja) 1999-04-14 2009-02-25 パナソニック株式会社 Ｉｉｉ族窒化物系化合物半導体基板の製造方法
JP2001044121A (ja) 1999-06-07 2001-02-16 Agilent Technol Inc エピタキシャル層構造及びその製造方法
JP3786544B2 (ja) 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP3791246B2 (ja) 1999-06-15 2006-06-28 日亜化学工業株式会社 窒化物半導体の成長方法、及びそれを用いた窒化物半導体素子の製造方法、窒化物半導体レーザ素子の製造方法
JP2000357820A (ja) * 1999-06-15 2000-12-26 Pioneer Electronic Corp 窒化ガリウム系半導体発光素子及びその製造方法
JP4005275B2 (ja) 1999-08-19 2007-11-07 日亜化学工業株式会社 窒化物半導体素子
JP4274504B2 (ja) 1999-09-20 2009-06-10 キヤノン株式会社 半導体薄膜構造体
JP2001111174A (ja) 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd 半導体素子用基板およびその製造方法およびその半導体素子用基板を用いた半導体素子
JP4055304B2 (ja) 1999-10-12 2008-03-05 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP2001122693A (ja) 1999-10-22 2001-05-08 Nec Corp 結晶成長用下地基板およびこれを用いた基板の製造方法
JP3518455B2 (ja) 1999-12-15 2004-04-12 日亜化学工業株式会社 窒化物半導体基板の作製方法
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6355497B1 (en) 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP3988018B2 (ja) 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置

Also Published As

Publication number Publication date
US20030092230A1 (en) 2003-05-15
WO2001048799A1 (en) 2001-07-05
KR20020073484A (ko) 2002-09-26
AU2400601A (en) 2001-07-09
AU776768B2 (en) 2004-09-23
CA2398525A1 (en) 2001-07-05
CN1189920C (zh) 2005-02-16
JP2001185493A (ja) 2001-07-06
US6830948B2 (en) 2004-12-14
EP1263031A1 (en) 2002-12-04
CN1413358A (zh) 2003-04-23

Similar Documents

Publication Publication Date Title
KR100500863B1 (ko) Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자
KR100499658B1 (ko) Ｉｉｉ족 질화물계 화합물 반도체의 제조 방법 및ｉｉｉ족 질화물계 화합물 반도체 소자
KR100527075B1 (ko) Ⅲ족 질화물계 화합물 반도체의 제조방법 및 ⅲ족 질화물계화합물 반도체 소자
KR100623558B1 (ko) Ｉｉｉ족 질화물계 화합물 반도체 및 그 제조방법
US7141444B2 (en) Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
JP4406999B2 (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP2002280314A (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP4051892B2 (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP3680751B2 (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4698053B2 (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法
JP4523097B2 (ja) Ｉｉｉ族窒化物系化合物半導体レーザダイオード
JP4016566B2 (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4487654B2 (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
JP2001267245A (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP2001267244A (ja) Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20080623

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090705

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090705

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000