JP6127144B2 - 3次元メモリアレイアーキテクチャ - Google Patents
3次元メモリアレイアーキテクチャ Download PDFInfo
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- JP6127144B2 JP6127144B2 JP2015530113A JP2015530113A JP6127144B2 JP 6127144 B2 JP6127144 B2 JP 6127144B2 JP 2015530113 A JP2015530113 A JP 2015530113A JP 2015530113 A JP2015530113 A JP 2015530113A JP 6127144 B2 JP6127144 B2 JP 6127144B2
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- 230000015654 memory Effects 0.000 title claims description 441
- 239000000463 material Substances 0.000 claims description 247
- 238000003860 storage Methods 0.000 claims description 57
- 239000011810 insulating material Substances 0.000 claims description 37
- 238000003491 array Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 46
- 239000012782 phase change material Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 18
- 229910052714 tellurium Inorganic materials 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 5
- 150000004770 chalcogenides Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
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- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Power Engineering (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
本開示は、弁護士整理番号1001.0680001を有し、「THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE」と題する、本願と共に出願する、米国特許出願第13/600、699号に関連し、その全体が参照により本明細書に組み込まれる。
Claims (5)
- 少なくとも絶縁材料により互いに分離された複数の階層のそれぞれに複数の第1の導電線を備える積層体と、
前記複数の第1の導電線の間に前記複数の階層に対して垂直に延びるように配置される複数の導電延長部と、
前記複数の導電延長部と前記複数の第1の導電線との交差部分のそれぞれに形成された記憶素子材料の部分及びセル選択材料の部分とを含む複数のメモリセルであって、それぞれのメモリセルが、前記複数の第1の導電線のうちの1本に隣接しかつこれを挟んで対向する前記複数の導電延長部のうちの2本と前記複数の第1の導電線のうちの前記1本とのそれぞれの間に形成された1対の前記記憶素子材料の前記部分を備える、複数のメモリセルと、
を備え、
前記1対の前記記憶素子材料の前記部分は、それぞれ前記複数の第1の導電線のうちの前記1本によって同時にアクセスされ、共通の情報を格納するように構成される、
メモリアレイ。 - 前記複数の第1の導電線及び前記複数の導電延長部にそれぞれ直角に延在する複数の第2の導電線をさらに備え、
前記複数の第1の導電線のうちの前記1本に隣接しかつこれを挟んで対向する前記複数の導電延長部のうちの前記2本は前記複数の第2の導電線のうちの1本と、それぞれ電気的に接続される、請求項1に記載のメモリアレイ。 - 前記記憶素子材料は、前記複数の導電延長部のそれぞれの周囲にかつ隣接して同心状に形成される、請求項1又は2に記載のメモリアレイ。
- 前記セル選択材料は、前記複数の導電延長部のそれぞれの周囲にかつ隣接して同心状に形成される、請求項1又は2に記載のメモリアレイ。
- 前記複数の第1の導電線の各々に隣接しかつ通信可能に結合されるヒータ材料を更に備え、
前記ヒータ材料が有する断面積は前記複数の第1の導電線のうちの少なくとも1本のものより小さく、
前記ヒータ材料は前記複数の第1の導電線のうちのそれぞれ1本と前記記憶素子材料との間に直列に配置される、
請求項1〜4のいずれか1項に記載のメモリアレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/600,777 | 2012-08-31 | ||
US13/600,777 US8729523B2 (en) | 2012-08-31 | 2012-08-31 | Three dimensional memory array architecture |
PCT/US2013/057620 WO2014036461A1 (en) | 2012-08-31 | 2013-08-30 | Three dimensional memory array architecture |
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JP2017024616A Division JP6280256B2 (ja) | 2012-08-31 | 2017-02-14 | 3次元メモリアレイアーキテクチャ |
Publications (2)
Publication Number | Publication Date |
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JP2015534720A JP2015534720A (ja) | 2015-12-03 |
JP6127144B2 true JP6127144B2 (ja) | 2017-05-10 |
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ID=50184442
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JP2015530113A Active JP6127144B2 (ja) | 2012-08-31 | 2013-08-30 | 3次元メモリアレイアーキテクチャ |
JP2017024616A Active JP6280256B2 (ja) | 2012-08-31 | 2017-02-14 | 3次元メモリアレイアーキテクチャ |
JP2017138203A Active JP6568155B2 (ja) | 2012-08-31 | 2017-07-14 | 3次元メモリアレイアーキテクチャ |
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JP2017024616A Active JP6280256B2 (ja) | 2012-08-31 | 2017-02-14 | 3次元メモリアレイアーキテクチャ |
JP2017138203A Active JP6568155B2 (ja) | 2012-08-31 | 2017-07-14 | 3次元メモリアレイアーキテクチャ |
Country Status (7)
Country | Link |
---|---|
US (2) | US8729523B2 (ja) |
EP (2) | EP3561877B1 (ja) |
JP (3) | JP6127144B2 (ja) |
KR (2) | KR101824856B1 (ja) |
CN (1) | CN104718625B (ja) |
TW (1) | TWI508091B (ja) |
WO (1) | WO2014036461A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11647628B2 (en) | 2020-03-19 | 2023-05-09 | Kioxia Corporation | Semiconductor memory device |
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Also Published As
Publication number | Publication date |
---|---|
TW201415477A (zh) | 2014-04-16 |
JP6280256B2 (ja) | 2018-02-14 |
US9444046B2 (en) | 2016-09-13 |
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US20140295638A1 (en) | 2014-10-02 |
KR20170102391A (ko) | 2017-09-08 |
EP2891184B1 (en) | 2019-05-15 |
EP3561877B1 (en) | 2021-12-08 |
JP2015534720A (ja) | 2015-12-03 |
KR101775248B1 (ko) | 2017-09-05 |
EP3561877A3 (en) | 2020-02-19 |
US20140061575A1 (en) | 2014-03-06 |
EP3561877A2 (en) | 2019-10-30 |
WO2014036461A1 (en) | 2014-03-06 |
US8729523B2 (en) | 2014-05-20 |
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