JP5811169B2 - 露光装置及び露光方法、デバイス製造方法 - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
これにより、基板アライメント系5の検出基準位置と、基板ステージPSTに載置された基板P上の各ショット領域との位置関係が決定される。すなわち、制御装置CONTは、レーザ干渉計56の出力から基板アライメント系5の検出基準位置に対して基板P上の各ショット領域がどこに位置しているかを知ることができる。
なお本実施形態のマスクアライメント系6では、マークに対して光を照射し、CCDカメラ等で撮像したマークの画像データを画像処理してマーク位置を検出するVRA(ビジュアル・レチクル・アライメント)方式が採用されている。
こうすることで、基準部材3上の液体LQが回収される。なお、基準部材3と補助プレート57とが一体的に設けられ、基準部材3bと基板Pとが補助プレート57を介してほぼ同じ高さで連続している構成が好ましく、この場合には、液体供給機構10の液体供給動作を停止することなく、投影光学系PLの像面側に液体LQを保持した状態で、液体LQの液浸領域を基準部材3上から基板P上に移動することができる。
基板アライメント系5は残留した液体LQの影響を受けることなく基準マークPFMの検出を精確に行うことができる。
また、マスク側基準マークMFMと基板側基準マークPFMとを別々の基準部材に形成してもよい。その場合、本実施形態のように、マスク側基準マークMFMと基板側基準マークPFMとを非同時に検出するようにすることで、基準マークPFMが形成された基準部材上には液浸領域を形成する必要がなくなる。したがって、基準マークPFMの無段差化などの液浸対応を行う必要がないばかりでなく、ウォーターマークなどの発生も防止できる。
Claims (13)
- 液体を介して基板上にパターン像を投影することによって、前記基板を露光する露光装置であって、
投影光学系と、
基板ホルダを有し、前記投影光学系の下方で移動可能な基板ステージと、
前記基板ステージに保持された前記基板上のアライメントマークを液体を介さずに検出する第1アライメント系と、
前記基板ステージに設けられた基準部材と、
前記基板ステージに設けられた前記基準部材の基準を使って前記パターン像の投影位置情報を取得するための第2アライメント系と、
前記基板ホルダに基板が保持されているか否かを検出する検出器と、を備え、
前記第2アライメント系を用いて前記投影位置情報を取得する際に、前記投影光学系の端面と前記基準部材の上面との間が液体で満たされる露光装置。 - 前記検出器を用いて、前記基板ホルダに前記基板またはダミー基板が保持されていることを確認した後に、前記第2アライメント系を用いて前記投影位置情報の取得が行われる請求項1記載の露光装置。
- 前記基準部材の上面の少なくとも一部は撥液性である請求項1又は2記載の露光装置。
- 前記基準部材の上面の少なくとも一部を撥液性にするために撥液化処理が施される請求項3記載の露光装置。
- 前記撥液化処理は、撥液性材料のコーティングを含む請求項4記載の露光装置。
- 前記基準は、金属材料をパターンニングすることによって形成される請求項1〜5のいずれか一項記載の露光装置。
- 請求項1〜6のいずれか一項記載の露光装置を用いるデバイス製造方法。
- 液体を介して基板上にパターン像を投影することによって、前記基板を露光する露光方法であって、
基板ステージの基板ホルダに基板が保持されているか否かを検出することと、
前記基板ホルダに保持された前記基板上のアライメントマークを液体を介さずに検出して、前記基板上の複数のショット領域の位置情報を取得することと、
前記基板ステージに設けられた基準部材の基準を用いて前記パターン像の投影位置情報を取得することと、
前記ショット領域の位置情報と、前記投影位置情報とに基づいて、前記基板を位置あわせして、前記基板上の複数のショット領域のそれぞれに前記パターン像を投影することと、を含み、
前記投影位置情報の取得は、前記基板ホルダに前記基板が保持されていることが確認された後に行われ、
前記投影位置情報を取得する際に、前記投影光学系の端面と前記基準部材の上面との間が液体で満たされている露光方法。 - 前記基準部材の上面の少なくとも一部は撥液性である請求項8記載の露光方法。
- 前記基準部材の上面の少なくとも一部を撥液性にするために撥液化処理が施される請求項9記載の露光方法。
- 前記撥液化処理は、撥液性材料のコーティングを含む請求項10記載の露光方法。
- 前記基準は、金属材料をパターンニングすることによって形成される請求項8〜11のいずれか一項記載の露光方法。
- 請求項8〜12のいずれか一項に記載の露光方法を用いるデバイス製造方法。
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HK (4) | HK1094090A1 (ja) |
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