JP5765285B2 - 露光装置及び露光方法、デバイス製造方法 - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Description
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
る。
これにより、基板アライメント系5の検出基準位置と、基板ステージPSTに載置された基板P上の各ショット領域との位置関係が決定される。すなわち、制御装置CONTは、レーザ干渉計56の出力から基板アライメント系5の検出基準位置に対して基板P上の各ショット領域がどこに位置しているかを知ることができる。
なお本実施形態のマスクアライメント系6では、マークに対して光を照射し、CCDカメラ等で撮像したマークの画像データを画像処理してマーク位置を検出するVRA(ビジュアル・レチクル・アライメント)方式が採用されている。
こうすることで、基準部材3上の液体LQが回収される。なお、基準部材3と補助プレート57とが一体的に設けられ、基準部材3bと基板Pとが補助プレート57を介してほぼ同じ高さで連続している構成が好ましく、この場合には、液体供給機構10の液体供給動作を停止することなく、投影光学系PLの像面側に液体LQを保持した状態で、液体LQの液浸領域を基準部材3上から基板P上に移動することができる。
基板アライメント系5は残留した液体LQの影響を受けることなく基準マークPFMの検出を精確に行うことができる。
また、マスク側基準マークMFMと基板側基準マークPFMとを別々の基準部材に形成してもよい。その場合、本実施形態のように、マスク側基準マークMFMと基板側基準マークPFMとを非同時に検出するようにすることで、基準マークPFMが形成された基準部材上には液浸領域を形成する必要がなくなる。したがって、基準マークPFMの無段差化などの液浸対応を行う必要がないばかりでなく、ウォーターマークなどの発生も防止できる。
Claims (22)
- 液体を介して基板上にパターン像を投影することによって、前記基板を露光する露光装置において、
投影光学系と、
前記基板を保持する基板ホルダを有し、移動可能な基板ステージと、
前記基板ステージに設けられた基準部材と、
前記投影光学系、及び前記投影光学系と前記基準部材との間の液体を介して、前記基準部材の基準を検出する検出系とを備え、
前記基準部材は、基材、前記基材上に前記基準が形成されるように配置された第1材料と第2材料、及び前記第1材料と前記第2材料とを覆う光透過性の材料を有し、
前記第1材料と前記第2材料が、互いに異なる光反射率を有し、
前記検出によって、前記投影光学系と前記液体を介して投影される前記パターン像の投影位置情報を取得する露光装置。 - 液体を介して基板上にパターン像を投影することによって、前記基板を露光する露光装置において、
投影光学系と、
前記基板を保持する基板ホルダを有し、移動可能な基板ステージと、
前記基板ステージに設けられた基準部材と、
前記投影光学系、及び前記投影光学系と前記基準部材との間の液体を介して、前記基準部材の基準を検出する検出系とを備え、
前記基準部材は、基材、前記基材上に前記基準が形成されるように配置された第1材料と第2材料、及び前記第1材料と前記第2材料とを覆う光透過性の材料を有し、
前記第1材料と前記第2材料が、互いに異なる光反射率を有する露光装置。 - 液体を介して基板を露光する露光装置において、
投影光学系と、
前記基板を保持する基板ホルダを有し、移動可能な基板ステージと、
前記基板ステージに設けられた基準部材と、を備え、
前記基板ステージは、前記投影光学系の像面側に形成された液浸領域が前記基準部材上に形成されるように移動可能であり、
前記基準部材は、基材、前記基材上にパターニングされた第1材料と第2材料、及び前記第1材料と前記第2材料とを覆う光透過性の材料を有し、
前記第1材料と前記第2材料が、互いに異なる光反射率を有する露光装置。 - 前記基準部材は、前記第1材料と前記第2材料とを覆う前記光透過性の材料のコーティングを含む請求項1〜3のいずれか一項記載の露光装置。
- 前記光透過性の材料は、石英を含む請求項1〜4のいずれか一項に記載の露光装置。
- 前記基準部材の上面の少なくとも一部は撥液性である請求項1〜5のいずれか一項記載の露光装置。
- 前記基準部材の上面の少なくとも一部を撥液性にするために撥液化処理が施される請求項6記載の露光装置。
- 前記撥液化処理は、撥液性材料のコーティングを含む請求項7記載の露光装置。
- 前記第1材料は、酸化クロムである請求項1〜8のいずれか一項記載の露光装置。
- 前記第1材料は、アルミニウムである請求項1〜8のいずれか一項に記載の露光装置。
- 前記第2材料は、クロムである請求項1〜10のいずれか一項に記載の露光装置。
- 請求項1〜11のいずれか一項に記載の露光装置を用いて基板を露光する露光処理ステップを含むデバイス製造方法。
- 液体を介して基板上にパターン像を投影することによって、前記基板を露光する露光方法において、
投影光学系、及び前記投影光学系と基板ステージに設けられた基準部材との間の液体を介して、前記基準部材の基準を検出することと、
前記投影光学系、及び前記投影光学系と前記基板との間の液体を介して前記基板を露光することと、を含み、
前記基準部材は、基材、前記基材上に前記基準が形成されるように配置された第1材料と第2材料、及び前記第1材料と前記第2材料とを覆う光透過性の材料を有し、
前記第1材料と前記第2材料が、互いに異なる光反射率を有する露光方法。 - 前記基準部材は、前記第1材料と前記第2材料とを覆う前記光透過性の材料のコーティングを含む請求項13記載の露光方法。
- 前記光透過性の材料は、石英を含む請求項13または14に記載の露光方法。
- 前記基準部材の上面の少なくとも一部は撥液性である請求項13〜15のいずれか一項に記載の露光方法。
- 前記基準部材の上面の少なくとも一部を撥液性にするために撥液化処理が施される請求項16記載の露光方法。
- 前記撥液化処理は、撥液性材料のコーティングを含む請求項17記載の露光方法。
- 前記第1材料は、酸化クロムである請求項13〜18のいずれか一項記載の露光方法。
- 前記第1材料は、アルミニウムである請求項13〜18のいずれか一項に記載の露光方法。
- 前記第2材料は、クロムである請求項13〜20のいずれか一項に記載の露光方法。
- 前記検出によって、前記投影光学系と前記液体を介して投影される前記パターン像の投影位置情報を取得する請求項13〜21のいずれか一項記載の露光方法。
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SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI474380B (zh) * | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
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