TW530334B - Optical exposure apparatus, lithographic projection tool, substract coating machine, and device manufacturing method - Google Patents
Optical exposure apparatus, lithographic projection tool, substract coating machine, and device manufacturing method Download PDFInfo
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530334 五、發明說明(1) 本發明係關於一種光學曝光裝置,其包括: 一輻射系統,提供輻射光束; '一基板台’用來固定基板; 一投影系統,用來投影光束到基板台上。 本發明尚關於一種微影投影工具,其包括: 一主要的輕射系統,提供主要的輻射投影光束; 一圖案化裝置(patterning means)的固定器,該圖案 化裝置依據需要的圖案來圖案化主投影光束; 一主要的基板台,用來固定基板; 一主要的投影系統,用來投影已圖案化的主投影光束 到至少基板的目標部分。 本發明也關於一種基板塗佈機器,其包括: 一基板的基座; 使基板於基座與轉換台之間前後移動的裝置; 當基板放在基座時,用來點加液體到基板主表面的點 液裝置。 在此使用的圖案化裝置」一詞應廣義地解釋為一種 予入射的輻射光束一相應於將在基板上目 11刀 、·案的圖案化截面;就此而論,「光閥(1 i g] v a 1 v e )」一詞也可以枯田 & 目俨部分中劊t 一般而言,該圖案相應於將 他:件(參閱下文作用層,如積體電路或 本置。本罢文)w樣的圖案化裝置的例子包括: 大*旱光罩的概念在微影 類型,包括諸如二开的:中已為吾人所热知’而光罩 一疋的’父互式相移的,衰減相移的,530334 V. Description of the invention (1) The present invention relates to an optical exposure device, which includes: a radiation system that provides a radiation beam; 'a substrate table' for fixing a substrate; a projection system for projecting a light beam onto the substrate table . The invention also relates to a lithographic projection tool, which includes: a main light-emitting system that provides a main radiation projection light beam; a holder of a patterning device, the patterning device is patterned according to a required pattern A main projection beam; a main substrate table for fixing the substrate; a main projection system for projecting the patterned main projection beam onto at least a target portion of the substrate. The invention also relates to a substrate coating machine, comprising: a base of the substrate; a device for moving the substrate back and forth between the base and the conversion table; when the substrate is placed on the base, it is used to add liquid to the substrate main Dispensing device on the surface. The term "patterning device used herein" should be broadly interpreted as a pre-incidence radiation beam-a patterned cross section corresponding to the target 11 on the substrate; in this connection, "light valve (1 ig) The word "va 1 ve)" can also be used in the Kuta & head section. Generally speaking, the pattern corresponds to the other pieces: (see action layers below, such as integrated circuits or local installations. This strike) w Examples of such patterning devices include: The concept of a large dry mask in the lithography type, including such as the two-opened: the "father mutual phase shift" of the photomask, and the attenuation phase Shifted,
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及各種混合的類型。在輻射光束中放置這種光罩引起照射 在光罩上的輻射依據光罩上的圖案選擇性傳導(傳導式光 罩)或反射(反射式光罩)。就光罩的情形而論,固定^一 般是光罩台,用來確保光罩能保持在入射輻射光束中所希 望的位置’以及必要時能相對於光束移動。 一組可程式鏡面陣列。這樣的元件例如是一個矩陣可選 址式的表面,有一黏彈性控制層與反射表面。上述裝置北 後的基本原理(舉例來說)是反射表面的選址區域將入射1 反射成繞射光,而未選址區域將入射光反射成非繞射光。 2用一個適當的濾光鏡,該非繞射光可以自反射光束令過 =出來邊下繞射光;如此一來,光束依據矩陣可選址 表面的選址圖案變成圖案化的。所需的矩陣選址可利 當的電子置來實施。其它有關鏡面陣列的更詳細資訊可以 自本案參考文獻載列的美國專利us 5, 296, 89 1與、 =! 523’ 193中收集。就可程式鏡面陣列的情形而論 以依需求製成,舉例來說,@定式或移動式的框 可程式液晶顯示幕(LCD)陣列。這種結構可見於本 ^考文獻載列的美國專利US 5,2 29,872中。如上所述, ,固定器可以依需她,舉例來說 = 框架或平台。 口疋忒及移動式的 地::::J ^ t文的剩下部分在某些的地方’係明確 仓丨孚士 S光罩台的例子予以說明;然而,在這此 例子中討“的-般性原理應m如同上述圖案化裝置二And various mixed types. Placing such a mask in a radiation beam causes the radiation hitting the mask to be selectively conducted (conductive mask) or reflected (reflective mask) according to the pattern on the mask. In the case of a reticle, the fixation ^ is generally a reticle stage to ensure that the reticle can remain at the desired position in the incident radiation beam 'and can be moved relative to the beam if necessary. A set of programmable mirror arrays. Such a component is, for example, a matrix-addressable surface with a viscoelastic control layer and a reflective surface. The basic principle behind the above device (for example) is that the selected area of the reflective surface reflects incident 1 as diffracted light, while the unselected area reflects incident light as non-diffracted light. 2 With an appropriate filter, the non-diffracted light can be self-reflected and the diffracted light below the outgoing light; in this way, the light beam is patterned according to the addressing pattern of the matrix-selectable surface. The required matrix location can be implemented with the proper electronics. Other more detailed information on mirror arrays can be collected from U.S. Patents 5,296,89 1 and,!! 523 '193, which are listed in the references of this case. In the case of a programmable mirror array, it can be made on demand. For example, @ 定 式 or mobile frame programmable LCD display (LCD) array. Such a structure can be found in U.S. Patent No. 5,2 29,872, which is listed in this reference. As mentioned above, the holder can be on demand, for example = frame or platform. Oral and mobile ground :::: The rest of the J ^ t text in some places is a clear example of the 丨 S S mask stage; however, in this example, " The general principle should be the same as the patterning device 2 described above.
530334 五、發明說明(3) ' -- 更廣義文述中。 微影投影工具舉例來說,可以使用在積體電路的製造中 。在這樣j例子裡,圖案化裝置產生單層積體電路的^路 圖案,而這圖案可以被映像到已經塗佈一層感光材料(光 阻劑)的基板(矽晶圓)的目標部分(如包括一個或更多晶 片)。一般/而言,一個單晶圓包含整個鄰接靶子部分的曰曰網 路,由投影系統一次一個連續照射。現有工具中,在光罩 台上使用光罩來圖案化,不同的操作原理會造成差異。 一類微影投影工具中,以一次曝光整個光罩圖案到目枳邙 分的方式,照射每個目標部分;這樣的工具通常指晶 進機。在其他的工具中—通常指步進掃瞄(step —and 一 scan)工具-在給定的參考方向(掃瞄方向)上,以投 漸進地掃瞄光罩圖案,並以平行或逆平行於這個方向/同步 掃瞄基板台的方式,肖射每個目標部A ;因為通530334 V. Description of the invention (3) '-In a broader narrative. The lithographic projection tool, for example, can be used in the manufacture of integrated circuits. In this example, the patterning device generates a circuit pattern of a single-layer integrated circuit, and the pattern can be mapped to a target portion (such as a silicon wafer) of a substrate (silicon wafer) that has been coated with a layer of photosensitive material (photoresist). Including one or more chips). Generally speaking, a single wafer contains the entire network of adjacent target portions and is continuously illuminated by the projection system one at a time. In the existing tools, a reticle is used for patterning on the reticle stage, and different operating principles will cause differences. In a type of lithography projection tool, each target portion is irradiated in such a way that the entire reticle pattern is exposed to the eye at a time; such a tool is usually referred to as a crystallizer. Among other tools—often referred to as step-and-scan tools—scan a reticle pattern progressively in a given reference direction (scanning direction), in parallel or antiparallel In this direction / synchronous scanning of the substrate stage, Xiao shots each target A; because
統有了個放大倍數Μ(通常小於n,基板台被掃瞒的速度v、 將會疋光罩台被掃瞄的速度乘以M ==的資訊可以在本案參考文獻載列V美本國文义 US 6, 046, 792 中收集。 ^用微影投影工具的製造過程中,圖案( 映像步驟之二L 光(光阻劑)的基板上。在這 阻U 基板可能經過各種程序,諸如除水氣,光 序二i如=及軟性烘烤處理。曝光後,基板會經過其他程 為 彳曝光烘烤處理(post-exposure bake,PEB), ”、、〜,硬性烘烤處理與圖像細節的測量/檢查。這整個程A magnification factor M (usually less than n, the speed at which the substrate stage is concealed, and the speed at which the photomask stage is scanned multiplied by M == can be included in the reference in this case. Collected in US 6,046, 792. ^ During the manufacturing process of the lithographic projection tool, the pattern (the second step of the imaging step of the L light (photoresist) on the substrate. The U substrate may undergo various procedures such as removing Moisture, light sequence II i == and soft baking treatment. After exposure, the substrate will go through other processes as post-exposure bake (PEB), ”,, ~, hard baking treatment and image Detailed measurement / inspection. This whole process
第8頁 530334 五、發明說明(4) ίΐΐΐ當成是圖案化一個如積體電路之元件的個別導電 :離2 i。廷樣的目標化層接著經過許多製程,諸如蝕刻 植入(摻雜),金屬北,氧化,化學機械研磨等等, 敫:ΐ一個單層。假如需要許多[則每個新層必須重複 =個或不同的程序。最後,元件的陣列會呈現在基板(晶 $ )上。廷些元件接著藉由一種技術將彼此分開,例如切 割,,開’從而單獨的元件可以固定在載座上,連接到引 線等等。關於這樣製程的進一步資訊可以從書中獲得,舉 ,來說’本案參考文獻載列的「微晶片製造:半導體製二 貫用指南」,第三版,van Zant彼得(peter)著,McGraw Hill 出版社,一九九七年,ISBN 〇一〇7一〇6725〇一4。 為了早純起見’此後本文的投影糸統係指「透鏡 (lens)」;然而,這個用詞應廣泛地解釋包含各種類型的 投影系統,包括折射光學,反射光學,以及反射折射系統 。輕射系統也可能包含根據任何這些設計類型操作的組件 ’用來導引、成形或控制輻射投影光束,而這樣的組件也 可能集體地或單獨地被當作透鏡。另外,微影工具是有兩 個或更多基板台(及/或兩個或更多光罩台)的類型。在這 樣的「多級」元件中,其他的工作台可以平行使用,或當 一個或多個工作台正用來做曝光時,預備步驟可以在另二 個或多個工作台先做。雙級微影工具在本案參考文獻載列 的美國專利US 5, 969, 441及W0 98/40791中有敘述。 如上所述,基板在微影製程中曝光之前,要曝光的基板 主表面被塗佈一層光敏材料(此後意指光阻劑)。傳統上這Page 8 530334 V. Description of the invention (4) ίΐΐΐ is used as a pattern to individually conduct electrical components of an integrated circuit: away from 2 i. The target-like target layer is then subjected to many processes, such as etching, implantation (doping), metal north, oxidation, chemical mechanical polishing, etc., 敫: ΐ a single layer. If many [are needed, then each new layer must repeat one or different procedures. Finally, the array of components is presented on the substrate (crystal $). These components are then separated from each other by a technique, such as cutting, opening, so that the individual components can be fixed on the carrier, connected to the leads, and so on. Further information on such a process can be obtained from the book, for example, "Microchip Manufacturing: A Guide to Dual Use of Semiconductor Manufacturing", referenced in this case, third edition, by van Zant Peter, McGraw Hill Publishing House, 1997, ISBN 0107 1067250.4. For the sake of early purity, hereafter the projection system is referred to as "lens"; however, the term should be broadly interpreted to include various types of projection systems, including refractive optics, reflective optics, and reflective refractive systems. Light-emitting systems may also include components that operate according to any of these design types to guide, shape, or control the radiation projection beam, and such components may also be used collectively or individually as lenses. In addition, the lithography tool is of a type having two or more substrate stages (and / or two or more photomask stages). In such a "multi-stage" component, other stages can be used in parallel, or when one or more stages are being used for exposure, the preliminary steps can be performed before the other two or more stages. Two-stage lithography tools are described in U.S. Patents 5,969,441 and WO 98/40791, which are incorporated by reference in this case. As described above, before the substrate is exposed in the lithography process, the main surface of the substrate to be exposed is coated with a layer of a photosensitive material (hereinafter referred to as a photoresist). Traditionally this
第9頁 530334 五、發明說明(5) 以自旋式塗佈程序來進行,基板高速旋轉而液體 喷口配料到旋轉主表面;由於離心力的緣故,液遷 =於主表Φ ° =過L'力與基板邊緣的新月效 導致光阻劑沿著主表面的周圍增加累積。這是極不 ,因為它使靠近周圍的幾個目標區域的光 均句;這不只影響微影曝光時的圖像品質,也會弓曰丨 曝光光阻劑層顯影時不必要的化學效應。因此 =開始前移除這周圍的光阻劑累積。這個程序傳 做邊緣球狀物去除。 ^另外會發生在光阻層的問題與該基板主表面上的 ,有關。在微f彡曝光製料,這樣的標記用來與在 碹:連ί ’凡成光罩圖案對基板(已存圖案, μ於^ 廷通常使用光學偵測系統(對準系統)來達 田光罩/日日圓的對準標記的影像與晶圓/光罩上 =重疊時發生的干涉效應。不過,基板上這些對 興=層的存在會引起干擾現象。這是因為對準方 二1對發生於標記上的光阻層的薄膜效應敏感, 诸如干涉,繞射與折射等效應丨這;裡所謂的^ 又'可使對準系統產生的訊號發生錯誤,而導致對 氺阳t通常會定期清除主表面上各對準標記下局部 交層。此程序傳統上稱為標記清掃。如本文所使 用來指局部移除基板上參考標記的光阻層 疋卢ί Ϊ記:諸如基板ID標記(如條碼的形式)等等 月技藝中’邊緣球狀物去除與標記清掃可以 L阻劑從 〖能夠分 •應,常 理想的 厚度不 起隨後 尋求在 統上稱 對準標 光罩上 t )的正 成,有 的對準 準標記 法的光 舉例來 Γ法相 準誤差 區域的 用的, ’而不 〇 用許多 530334 五、發明說明(6) 方式實施。舉例 者基板周邊喷射 謂的晶圓執道機 具旁並與其連接 先乾燥,曝光後 狀物去除使用溶 可能包含不經意 滴,而導致這些 寸增大而增加, 隨之增加。 相似的程序可 除更具風險。所 即每個標記周圍 該區域曝光;在 也會顯影。此標 影曝光中按照順 微影製程的生產 (通常非常昂貴) 要的。 本發明的目的 提供邊緣球狀物 。此外,本發明 高的,儘可能使 上述與其他的 用在標 以,標 的小區 後續的 記清掃 序實施 率幾乎 ’因此 在處理 去除與 的目的 時間上 目的在 來說’邊緣球狀物去 適當溶液(如丙嗣)來 台(wafer track)中 之機台,基板在其中 初步烘乾。不過,可 液的方式是一個相當 遺漏而落在基板的平 晶片的進一步製程失 因為晶片被降落的溶 記清掃, 記清掃通 域以適當 基板顯影 的技術在 ,因此它 完全決定 使時間上 上述問題 標記清掃 是此一裝 的花費因 根據申請 除可以控制的方式沿 實施。這通常用在所 ’即一部放在微影工 自旋塗佈,且曝光前 以了解的是,邊緣球 危險的程序,因為它 面晶片區域的溶液液 敗。這風險隨晶片尺 液液滴打中的機率亦 但將會比在邊緣球狀物去 常使用曝光技術來達成, 波長/能量的輻射照射使 期間’標記上的曝光區域 基板上使用光罩的標準微 導致時間上的花費。因為 微影工具所有人的花費 的花費維持到最小是極重 。特別是本發明的目的在 皆可進行的單一曝光裝置 置在操作上是快速與效率 其使用而儘量小。 專利範圍第1項的光學曝Page 9 530334 V. Description of the invention (5) The spin coating process is used. The substrate rotates at a high speed and the liquid nozzle is dosed to the rotating main surface. Due to the centrifugal force, the liquid migration = in the main table Φ ° = over L ' The crescent effect of the force and the edge of the substrate causes the photoresist to accumulate along the periphery of the main surface. This is extremely bad, because it makes the light of several target areas close to the surrounding even; this not only affects the image quality during lithographic exposure, but also undesired chemical effects during the development of the exposed photoresist layer. So = remove the surrounding photoresist buildup before starting. This procedure is passed for edge bulb removal. ^ In addition, the problems that may occur in the photoresist layer are related to on the main surface of the substrate. In microf 彡 exposure material, such marks are used to connect with the following: Lian Fan's mask pattern on the substrate (existing pattern, μ Yu ^) usually uses an optical detection system (alignment system) to reach Tianguang The image of the alignment mark of the mask / Japanese yen and the wafer / photomask = interference effects that occur when they overlap. However, the presence of these anti-layers on the substrate can cause interference. This is because of the alignment pair 1 pair The thin film effect of the photoresist layer that occurs on the mark is sensitive to effects such as interference, diffraction, and refraction. Here, the so-called ^ and 'can cause errors in the signal generated by the alignment system, which will usually cause the Periodically remove localized layers under the alignment marks on the main surface. This procedure is traditionally called mark cleaning. As used herein, refers to the partial removal of a photoresist layer on a substrate with reference marks. Note: Such as substrate ID marks (Such as the form of a bar code) and so on. In the monthly craftsmanship, the "edge ball removal and mark cleaning can be done with a resist. It can be divided and applied, often with an ideal thickness, and it can not afford to subsequently seek to collectively call the alignment mark on the mask." The integrity of), some alignment The light of the quasi-marking method is exemplified by the use of the Γ method's quasi-error region, and ′ instead of 530334. It is implemented in the manner of (6) in the description of invention (6). For example, the substrate is sprayed around the so-called wafer handling machine and connected to it. Dry it first and remove it after exposure. The use of solvent may include inadvertent drops, which will cause these dimensions to increase and increase. Similar procedures can be more risky. That is, the area around each mark is exposed; it is also developed at. This shadow exposure is required for production (usually very expensive) following a lithographic process. It is an object of the present invention to provide edge spheres. In addition, the present invention is as high as possible, so that the above mentioned and other uses are marked, the implementation rate of the subsequent record cleaning sequence of the target cell is almost 'so the purpose of processing the removal time and the purpose is to say' edge ball to go appropriate ' The solution (such as propidium) comes to the machine in the wafer track, and the substrate is dried in it. However, the liquid method is a rather missed and further process of flat wafers that land on the substrate. Because the wafers are cleaned by the dissolution of the land, the cleaning technique is based on the proper development of the substrate, so it completely determines the time above. Question mark cleaning is the cost of this package due to implementation in a manner that can be controlled in addition to the application. This is usually used in a process that is spin-coated on a lithographer and before exposure to understand that the edge ball is a dangerous process because the solution in the wafer area is depleted. This risk depends on the probability of hitting the liquid droplets of the wafer ruler, but it will be achieved more often by using exposure technology than on the edge of the ball. The radiation of wavelength / energy makes the exposure area on the substrate marked with a photomask during the exposure period. Standard micro causes time. Because the cost of the lithography tool owner's expenses is kept to a minimum is extremely heavy. In particular, the purpose of the present invention is to make a single exposure device that can be used both fast and efficient in operation, and use it as small as possible. Optical Exposure in Patent Scope Item 1
第11頁 530334 五、發明說明(7) 光裝置中予以界定 本案發明人已知為了避免邊緣球狀物去除(Ε β r )與標記 清掃(MC)程序導致相當的時間浪費,本發明操作這些^力1能 之曝光裝置在處理基板時必須至少能夠與用以在基板上執 行圖像化的(最快的)微影投影工具一樣快速。既然現代 技術的微影工具可達到每小時1 2 〇個基板數量級的產量, 這表示邊緣球狀物去除/標記清掃裝置必須能夠在至多3〇 秒内處理好一個基板。根據本發明的邊緣球狀物去除/標 :己清掃裝置可達成這個目標,尤其藉由它的能力進行平行 处理時,因為有許多分量投影系統,它們可以同時在同一 =基板上處理不同的工作程序。再者,因為至少一個分量 =㈣’可以藉由相對於基板移動(每個)撓 系、统的近端通過基板上不同的㈣,而不是必 因ΪΪ !系統移動基板。這有明顯的優點: 這樣的ΐ =二不而要側邊地移動一個基板直徑的大幅度, 乂樣的裝置佔用較少空間; 基:m、:(相對地較輕)的侧邊移動可以較側邊移動 根據本發明的暾^ ^點而要侧邊移動時可及時旋轉。 的進一步择 t先(邊緣球狀物去除/標記清掃)裝置 =夕广才呆作與優點將於下文討論。 分裂ί ΐ 1:: ί i的分量光束’舉例來說,▼能係使用 含稜鏡與不同二光二公2光★束來產生;這種裝置的例子包 具備或不JL # $ # : 70牛(菲涅耳透鏡陣列或透鏡弧段), 不”備另外的光束調節光學,諸如準直,聚光與/ 530334 五、發明說明(8) 或聚焦透鏡或鏡片。或者,該多光束可由許多個別的輻射 光源提供。 在根據本發明的光學曝光裝置的特殊具體實施例中, (每個)撓性分量投影系統的近端是可相對於基板的平面, 而徑向轉移的。因為基板台可以做平面旋轉,這樣的徑向 移動允許該近端通過基板外向表面上的任何點(r,0 )。 在根據本發明的光學曝光裝置的另一具體實施例中,每 個分量投影系統是如撓性的。這允許在裝置中最佳化平行 處理。 (每個) 包含一個 或一束這 滿液體的 光導,每 或多個鏡 焦來自撓 在本發 統與基板 的輻射。 或長方形 記(及/或 巧地符合 每個分量 端0 π篁役 撓性光 樣的光 光導可 個分量 片組成 性光導 明的另 台之間 這種模 的孔徑 基板I D 孔獲的 投影的 影系統所需的撓 導來達成。這光 纖。不過,本案 以得到特別符合 投影系統一般還 。此聚焦系統通 而投射到基板上 一具體實施例中 ’提供模版圖案 版圖案的例子是 ’孔控的大小係 標記)來做選擇 投影影像的範圍 近端較佳,但舉 性可以精由使它(或它們) 導的例子是一條粗的光纖 發明人已經注意到使用裝 要求的結果。除了該撓性 包括一聚焦系統,由一個 常被放置在近端,用來聚 的輻射。 ’模版固定器放在輻射系 給通過每個分量投影系統 暗場中的一個圓形、方形 依相對於基板上的對準標 •如此使每個對準標記精 。模版固定器以放在靠近 例來說’也可能放在該遠Page 11 530334 V. Description of the invention (7) Defined in the light device The inventors of this case are known to avoid considerable time wastage caused by the edge ball removal (E β r) and mark cleaning (MC) procedures. The present invention operates these The exposure device for force 1 must be at least as fast as the (fastest) lithographic projection tool used to perform imaging on the substrate when processing the substrate. Since modern technology's lithographic tools can achieve orders of magnitude of 120 substrates per hour, this means that the edge ball removal / marking and cleaning device must be able to process one substrate in up to 30 seconds. The edge ball removal / marking according to the present invention: the self-cleaning device can achieve this goal, especially when using its ability to perform parallel processing, because there are many component projection systems, they can simultaneously process different tasks on the same substrate. program. Furthermore, because at least one component = ㈣ ′ can move the (each) flexure relative to the substrate, the proximal end of the system can pass through different ㈣ on the substrate instead of necessarily moving the substrate due to the ΪΪ! System. This has obvious advantages: such a ΐ = not only has to move a large substrate diameter sideways, the 乂 -like device occupies less space; base: m,: (relatively lighter) side movement can It can be rotated in time when moving the 移动 ^^ points according to the present invention more sideways and sideways. Further options (edge ball removal / marking cleaning) device = Xi Guangcai's work and advantages will be discussed below. Splitting ί ΐ 1 :: ί i's component beam 'for example, ▼ can be generated using 稜鏡 and different two light beams and two public light beams; examples of such devices are provided with or without JL # $ #: 70 Cattle (Fresnel lens array or lens arc), do not have additional beam adjustment optics, such as collimation, focusing and / 530334 V. Description of the invention (8) or focusing lens or lens. Alternatively, the multi-beam can be made by Many individual radiation sources are provided. In a particular embodiment of the optical exposure device according to the invention, the proximal end of the (each) flexible component projection system is radially transferable relative to the plane of the substrate because the substrate The stage can be rotated in a plane, such a radial movement allows the proximal end to pass through any point (r, 0) on the outward surface of the substrate. In another specific embodiment of the optical exposure device according to the present invention, each component projection system It is as flexible as possible. This allows to optimize parallel processing in the device. (Each) Contains one or a bundle of this liquid-filled light guide, each or more of the mirror focus comes from the radiation that is scratched between the system and the substrate. Or Rectangular (And / or coincidentally conform to the 0 π 篁 flexible light sample of each component end of the light guide may be a component light guide between the other components of this module aperture substrate ID projection projection system obtained The required deflection is achieved. This optical fiber. However, this case is generally compatible with the projection system. This focusing system is usually projected onto the substrate. An example of 'providing a stencil pattern' pattern is 'hole control'. It is better to select the range of the projected image near the near end, but an example can be made so that it (or them) is guided. An example of a thick optical fiber has been noticed by the inventor. In addition to the scratch It includes a focusing system, which consists of a radiation that is often placed at the near end to focus. 'The template holder is placed in the radiation system to pass a circular, square shape in the dark field of each component projection system relative to the substrate. Alignment mark • This makes each alignment mark fine. The stencil holder is placed close to it, for example, and it may be placed far away.
530334 五、發明說明(9) 在上一段具體實施例的進一步詳細部分 一 有兩個分量投影系統; —每個模版圖案在不透明場中包括一個孔徑; 其中一個分量投影系統的孔徑較其他的大。 這樣的結構允許邊緣球狀物去除(EBR)與標記清 = 上粗糙與精細的)進行。特別是就邊緣球 去除(EBR)的情形而論,粗糙的(較大的)孔 一個或更多掃瞄中用來曝光沿著基板周圍的—二 心的(與稍微重疊的)光阻劑條帶,而 同 同時用來進行基板上最靠近晶片區域的最,小二)孔徑 掃瞄。 Λ j取,木處、限定性的 ,本發明的另一具體實施例中,曝光裝 ,猎以測量基板相對於基板台轉動軸的位置=準裝置 的裝置舉例來說,係使用放在靠$ 方向。這樣 =子偵測以例如電荷耦合器件,⑽,以及邊 一邊到光學傳感器的光源,如此-來 基板邊緣部分哀減掉該光束; 來, 同時測量從光偵測器輸出 乍σ上的基板與 的離心率與基板邊緣號’可以測量工作台上基板 實施例通常較光學:;二;:感測元件’即使此-具體 在上一段具體實施例的進一牛 板移動裝置,藉此可調整在A二 ':二:,該裝置包括基 方向。這使得在邊緣球狀物;的位,^ 玄除/私圯清知開始前的任何530334 V. Description of the invention (9) In the further detailed part of the previous embodiment, there are two component projection systems;-each template pattern includes an aperture in the opaque field; the aperture of one component projection system is larger than the others . Such a structure allows edge bulb removal (EBR) and marking clear (upper and finer). Especially in the case of edge ball removal (EBR), rough (larger) holes are used in one or more scans to expose the-two-centered (with slightly overlapping) photoresist along the periphery of the substrate Stripe, and at the same time, it is used to perform the scan on the substrate closest to the wafer area, the second small) aperture scanning. Λ j is taken from a wooden place and is limited. In another specific embodiment of the present invention, an exposure device is used to measure the position of the substrate relative to the rotation axis of the substrate table = the device. $ Direction. In this way, the sub-detection uses, for example, a charge-coupled device, a light source, and a light source side by side to the optical sensor, so that the substrate edge portion attenuates the beam; at the same time, the substrate and the substrate on the output from the photodetector are measured simultaneously. The eccentricity and the edge number of the substrate can measure substrates on the workbench. Embodiments are usually more optical :; II ;: sensing element 'even if this-specifically in the previous paragraph specific embodiment, a cow board moving device can be adjusted, thereby adjusting the A2 ': 2: The device includes a base direction. This makes a bit of the ball at the edge;
ΗΗ
第14頁 530334 五、發明說明(ίο) 離心率測量是正確的。 本發明也關於一種微影投影工具,其包括: 一主要的輻射系統,提供主要的輻射投影光束; 一圖案化裝置的固定器,該圖案化裝置根據需要的圖 案來圖案化主投影光束; 一主要的基板台,用來固定基板; 一主要的投影糸統,用來投影已圖案化的主投影光束 到至少基板的目標部分。 其中被影投衫工具尚包括^一個根據本發明的光學曝光裝 置。以這個方式將曝光裝置結合於微影工具中可使邊緣球 狀物去除及/或標記清掃在基板到工具的入口與光罩影像 的投影之間以效率高的方式完成。此外,微影工具通常包 括=個使本發明的曝光裝置可以非常成功地結合^基板操 作模組;這樣的基板操作模組通常包括一個轉盤, 線對準器與基板操作機$人,冑可自本發明的曝光裝置予 =用。在歐洲專利申請案EP i 0 52 546瓣i 〇52 548 中有這種基板操作模纽的例子’雖然所 許多修改。必要時,本發明的蔽本胜¥ 》又。T T此有 而不是該基板操作模ί月的曝先裝置可以結合微影工具 結合本發明的裝置到微影工且 工具的主輕射系統轉移::辕射2r優點在於可能使 由-個(昂貴的)準分子雷::::間與金錢’特別是在 說,如193奈米或157奈米)下工作時。生的波長(舉例來 530334Page 14 530334 V. Description of the Invention (ίο) The eccentricity measurement is correct. The present invention also relates to a lithographic projection tool, which includes: a main radiation system that provides a main radiation projection beam; a holder of a patterning device that patterns the main projection beam according to a required pattern; a The main substrate table is used to fix the substrate; a main projection system is used to project the patterned main projection beam onto at least the target portion of the substrate. The shadow projection shirt tool further includes an optical exposure device according to the present invention. Incorporating the exposure device in the lithography tool in this manner allows edge ball removal and / or mark sweeping to be performed in an efficient manner between the entrance of the substrate to the tool and the projection of the mask image. In addition, the lithography tool usually includes a substrate operating module that enables the exposure device of the present invention to be very successfully combined; such a substrate operating module usually includes a turntable, a line aligner, and a substrate operating machine. It is used from the exposure apparatus of the present invention. An example of such a substrate operating mold is provided in the European patent application EP i 0 52 546 flap i 0552 548 'although many modifications have been made. When necessary, the present invention of the book wins. TT This is not the exposure device of the substrate operation mode. The lithography tool can be combined with the lithography tool and the device of the present invention is transferred to the lithography tool and the tool's main light-emitting system is transferred :: 辕 射 2r The advantage is that it can make Expensive) Excimer Ray :::: and money 'especially when talking about working under 193nm or 157nm). Wavelength (for example 530334
本發明尚關於一種基板塗佈機器,其包括: 一基板的基座; 使基板於基座與轉換台之間前後移動的裳置; 當基板放在基座時,用來點加液體到基板主表面的點^ 裝置。 ”之 其中基板塗佈機器尚包括一個根據本發明的光學曝光I 置。這樣的基板塗佈裝置通常指晶圓軌道機台。以這個 式將曝光裝置結合到基板塗佈機器,允許邊緣球狀物去除 與/或標記清掃以效率高的方式在基板自機器移開,進Z 鄰接的微影工具之前完成。此外,基板塗佈機器通常包括$ 一個轉盤與基板操作機器人,可以為本發明的曝光裝置所 利用。在這裡&到的基板塗佈機器的一個例子,舉例來 說,敘述於國際專利申請案wo 97/ 05527(對應於本案參 文獻載列的美國專利US 5, 766, 824)中。 根據本發明的另一方面,提供元件製造方法,包括步 驟: (a) 提供至少部分覆蓋一層感光材料的基板; (b) 提供使用輻射系統的輻射投影光束; (c) 使用圖案化裝置賦予投影光束的截面圖案; ⑷投影已圖案化的輻射光束到感光層的目標部分;❶ 其中’在步驟(a)與⑷間’在基板上至少完成下列動作之 照射感光材料層的周圍j裏· 照射至少基板上的一個對準標兮己·The invention also relates to a substrate coating machine, which comprises: a base of a substrate; a rack for moving the substrate back and forth between the base and the conversion table; and when the substrate is placed on the base, it is used to add liquid to the substrate Point ^ device on the main surface. "Among them, the substrate coating machine also includes an optical exposure device according to the present invention. Such a substrate coating device is generally referred to as a wafer track machine. In this way, the exposure device is combined with the substrate coating machine, allowing the edges to be spherical. Object removal and / or mark cleaning is done in an efficient manner before the substrate is removed from the machine and before entering the lithographic tool adjacent to Z. In addition, substrate coating machines usually include a turntable and a substrate operation robot, which can be the subject of the present invention. An exposure device is used. An example of the substrate coating machine here & described, for example, is described in the international patent application wo 97/05527 (corresponding to the US patent US 5,766, 824 listed in the reference of this case). ). According to another aspect of the present invention, a component manufacturing method is provided, comprising the steps of: (a) providing a substrate at least partially covered with a layer of photosensitive material; (b) providing a radiation projection beam using a radiation system; (c) using patterning The device imparts a cross-section pattern of the projected beam; ⑷ projects the patterned radiation beam onto the target portion of the photosensitive layer; ❶ where 'between step (a) and ⑷' Completed at least the following actions irradiating the photosensitive material layer on a substrate in surrounding j Irradiation at least one alignment mark on the substrate Xi-hexyl
第16頁 530334 五、發明說明(12) *-- 至少一個動作使用根據本發明之光學曝光裝置來進行。 雖然本文中可能給根據本發明之裝置訂定了在積體電路 的製造中特定的參考用途,應明確瞭解的是這樣的裝置可 以有許多其他可能的應甩。舉例來說,它可以用在積體光 學系統、導管與磁性記憶體的偵測圖案、液晶顯示板、 膜磁頭等等的生產中。熟諳此藝的人士知道,在造些其他 應用中,任何於本文中使用的「光罩(reticle)」,「晶 圓(wafer)」,或「小晶片(die)」的術語應考慮分別以曰曰較 二般的術語「光罩(mask)」,「基板(substrate)」,與 目標部分(target portion)」替代。 ” 在本文件中,「輻射」與「光束」術語用來包含所有形 ’的電磁輻射’包括紫外線輻射(如波長36 5,248,193, 或ϋ奈米)與極紫外線輻射(EUV,如具有5至20奈米範 圍的波長)。 # ί =舉例方式參考伴隨的示意圖介紹本發明之具體 貝她例,其中·· = '二寫根據本發明具體實施例的微影投影工具; 二j二根據本發明特殊具體實施例的光學曝光裝置; 盥^々、主不声使用根據本發明曝光裝置完成邊緣球狀物去除 與&A清掃的部分基板的平面圖; 一 不根據本發明光學曝光裝置中的分量投影系統之 呈對應的參考符號指示對應的構件。.Page 16 530334 V. Description of the invention (12) *-At least one action is performed using the optical exposure device according to the present invention. Although a specific reference use in the manufacture of integrated circuits may be specified for a device according to the invention herein, it should be clearly understood that there are many other possible applications for such a device. For example, it can be used in the production of integrated optical systems, detection patterns of catheters and magnetic memories, liquid crystal display panels, film magnetic heads, and the like. Those skilled in the art know that in making other applications, any terms used in this article such as “reticle”, “wafer”, or “die” should be considered separately. The more general term "mask", "substrate" is replaced with the "target portion". In this document, the terms "radiation" and "beam" are used to encompass all forms of 'electromagnetic radiation' including ultraviolet radiation (such as wavelengths 36 5, 248, 193, or nanometers) and extreme ultraviolet radiation (EUV, such as With a wavelength in the range of 5 to 20 nm). # ί = An example is described with reference to the accompanying schematic diagram of a specific example of the present invention, where ... = 'Two write a lithographic projection tool according to a specific embodiment of the present invention; two j two optical exposure according to a specific embodiment of the present invention Plan; Partially using the exposure device according to the present invention to accomplish edge ball removal and & A cleaning of part of the substrate; a plan view of a component projection system not in the optical exposure device according to the present invention The symbol indicates the corresponding component. .
A體貫施UA body through U
530334 五、發明說明(13) 圖1概要描寫一具有根據本發明光學曝光裝置的微影投 影工具。投影工具包括: 一個用來提供輻射主投影光束(PB)的主輻射系統Ex ’ IL。在這個特定實例中,主輻射系統也包括一個輻射源 LA ; 第一個檢物台(光罩台)MT,具有固定光罩MA(例如網線) 的光罩固定器,並且連接到用來為光罩相對於PL精確定位 的第一個定位裝置。530334 V. Description of the invention (13) Fig. 1 outlines a lithographic projection tool having an optical exposure device according to the present invention. The projection tool includes: a main radiation system Ex'IL for providing a main projection beam (PB). In this particular example, the main radiation system also includes a radiation source LA; the first inspection stage (mask stage) MT, a mask holder with a fixed mask MA (such as a network cable), and is connected to The first positioning device for precise positioning of the photomask relative to the PL.
第二檢物台(主基板台)WT,具有基板固定器以固定基板 W (如塗有光阻層的矽晶圓),並且連接到用來為基板相對 於PL精確定位的第二定位裝置。 主投影系統(透鏡)PL (如一折射、反射或反射折射光學 的系統)用來映像光罩MA的照射部分到基板w的目標部分C (如包括一個或更多晶片)。 如此處所敘述的,工具係屬透射類型(即具有透射光罩) 。然而,一般而言,它也可以是反射類型的,舉例來說 (具反射光罩)。或者工具可利用其他種圖案化裝置,例如 上述類型的可程式鏡面陣列。The second inspection stage (main substrate stage) WT has a substrate holder to hold the substrate W (such as a silicon wafer coated with a photoresist layer), and is connected to a second positioning device for accurately positioning the substrate relative to the PL . The main projection system (lens) PL (such as a system of refractive, reflective, or refracting optics) is used to project the irradiated portion of the mask MA to the target portion C of the substrate w (such as including one or more wafers). As described here, the tool is of the transmission type (ie, has a transmission mask). However, in general, it can also be reflective, for example (with a reflective mask). Alternatively, the tool may utilize other patterning devices, such as a programmable mirror array of the type described above.
輻射源LA(如水銀燈或準分子雷射)產生輻射光束。這道 光束直接射入照明系統(照明裝置)IL,或是在穿過調節裝 置,如光束增大器Ex後射入IL。照明裝置^可能包括用來 設定光束外部與/或内部射線(通常分別稱為σ外盥σ内) 強度分佈程度的調節裝置ΑΜ。此外,它通常包括種直他 組件,如積分器IN與聚光鏡co m,射到光罩^的The radiation source LA (such as a mercury lamp or excimer laser) generates a radiation beam. This light beam directly enters the lighting system (lighting device) IL, or enters IL after passing through adjustment devices such as the beam expander Ex. The lighting device ^ may include an adjustment device AM for setting the intensity distribution of the external and / or internal rays of the light beam (commonly referred to as σ outside and σ inside respectively). In addition, it usually includes a variety of straight components, such as the integrator IN and the condenser
530334 五、發明說明(14) 光束PB在截面上具有所要的均勻度與強度分佈。 需要注意的是關於圖一,輻射源!^可能在微影的投影工 具的外殼裡(舉例來說,通常的情況是當輻射源LA是水銀 燈時),但它也可能從微影投影工具中移去,而將它產生 的輻射光束引導到工具(如藉由適當引導鏡片);後者通常 是輻射源LA為準分子雷射(如建立於氟化氪£1^,氟化氬530334 V. Description of the invention (14) The beam PB has the desired uniformity and intensity distribution on the cross section. It should be noted that with regard to Figure 1, the radiation source! ^ May be in the shell of the lithographic projection tool (for example, usually when the radiation source LA is a mercury lamp), but it may also be from the lithographic projection tool. Remove and direct the radiation beam it produces to the tool (eg, by properly directing the lens); the latter is usually the radiation source LA as an excimer laser (eg, based on fluorinated £ 1 ^, argon fluoride
ArF或氟氣F2的雷射)時。本發明與申請專利範圍皆包含這 兩種設想情況。 光束PB隨後截取由光罩固定器訂固定的光罩MA。通過光 罩MA後,光束PB穿過透鏡PL,聚焦於基板w的目標部分^。 藉助於第二定位裝置(與干涉測量裝置IF),主基板台打可 精確地移動,以便安置不同的目標部分c於光束”的^1 路徑 中。同樣地,第一定位裝置可以用來精確地定位光束ρβ路 徑上的光罩MA,例如光罩在光罩庫的機械修正之後或 瞄期間。通常,檢物台MT與主基板台WT的移動可藉助於 沖程模組(粗略定位)與短沖程模組(精細定位)來: 圖}中沒有明確描繪出,然而,在晶圓步進器中^進^ArF or F2 laser). Both the invention and the scope of the patent application cover both scenarios. The light beam PB then intercepts the mask MA fixed by the mask holder. After passing through the mask MA, the light beam PB passes through the lens PL and is focused on the target portion ^ of the substrate w. With the help of the second positioning device (and the interferometric measuring device IF), the main substrate table can be accurately moved so as to place different target portions c in the path of the light beam. Similarly, the first positioning device can be used to accurately Position the mask MA on the path of the beam ρβ, such as after the mechanical correction of the mask library or during the sighting. Generally, the movement of the inspection table MT and the main substrate table WT can be achieved by the stroke module (rough positioning) and The short-stroke module (fine positioning) comes: not explicitly depicted in Figure}, however, in the wafer stepper ^ 进 ^
瞄工具相反)光罩台MT可能連接到短沖程傳動詈、,~ 能係固定著。 ~ A T 所述的工具可於兩種不同的模式中使用: 1·在步進模式中,光罩固定器Μτ*本上保 個光罩圖案一次(即單一閃光)投影到目標部分C動^,而整 台WT接著於X與/或Y方向移動,使光束”可 基板 的目標部分“、、射到不同Opposite aiming tool) The photomask table MT may be connected to the short-stroke drive 詈, ~ can be fixed. ~ The tools described in AT can be used in two different modes: 1. In the step mode, the reticle holder Mτ * keeps a reticle pattern projected once (ie, a single flash) onto the target part C. ^ , And the entire WT then moves in the X and / or Y direction, so that the light beam "can reach the target portion of the substrate",
第19頁 530334 五、發明說明(15) 2 ·在掃瞒模式中,基本上應用相同的設想情況,除了給 定的目標部分不是單一閃光曝光。相反地,光罩固定器Μτ 在已知的方向(所謂的掃瞄方向,如γ方向)上可以速度v移 動,使投影光束PB掃瞄遍及光罩影像;此時主基板台WT同 時在相同或反方向以速度V = Mv移動,這裡的Μ是透鏡PL的 放大率(典型的Μ值,M = l/ 4或1/5)。在這個情況下,相對 大的目標部分C可以曝光而不需遷就於解析度。 這個工具也具有基板操作站台迎。站台WH包括一個轉盤 (基板台)2 ’基板操作機器人4,輸入/輸出埠6與前置直 對準器10。在這特殊情況中’它已具有根據本發明之光 學曝光裝置8,因此有效率地運用轉盤2,機器人4與對準 裝置(前置直線對準器)10。 基_體實施例2 圖2顯不根據本發明特殊實施例的光學曝光裝置的一部 :、水銀^ 2^產生寬帶紫外光輻射,由橢圓鏡片2 3收集 、’導引向凋節鏡片2 5。調節鏡片2 5具有選擇性光學塗佈 ^冷卻的此—來由燈21產生的大部分光譜由鏡片2 而只有狹窄部份的光譜沿著轴27反射。Page 19 530334 V. Description of the invention (15) 2 • In the concealment mode, basically the same scenario is applied, except that the given target part is not a single flash exposure. Conversely, the mask holder Mτ can move at a speed v in a known direction (the so-called scanning direction, such as the γ direction), so that the projection beam PB is scanned across the mask image; at this time, the main substrate table WT is at the same time Or move in the opposite direction at speed V = Mv, where M is the magnification of the lens PL (typical M value, M = 1/4 or 1/5). In this case, a relatively large target portion C can be exposed without having to compromise on resolution. This tool also has a substrate operation platform. The station WH includes a turntable (substrate stage) 2 ′ substrate operation robot 4, input / output port 6 and front aligner 10. In this particular case, it already has the optical exposure device 8 according to the present invention, and therefore efficiently uses the turntable 2, the robot 4, and the alignment device (front linear aligner) 10. Base_body example 2 Figure 2 shows a part of an optical exposure device according to a special embodiment of the present invention: Mercury ^ 2 ^ generates broadband ultraviolet radiation, which is collected by an elliptical lens 2 3 and 'guided to the withered lens 2 5. The adjusting lens 25 has a selective optical coating. Cooling-most of the spectrum generated by the lamp 21 is reflected by the lens 2 and only the narrow portion of the spectrum is reflected along the axis 27.
元件29包括光束分芻姑班 m ^ 成夕八旦上土 璉裝置,用來再細分沿著軸27的光一 夕l刀里光束,在這個例子裡,。 光束分裂裝置29引導至一八θ扒!么 刀里九釆 咚八剡π a π + 主一刀1投影系統,2 11 a與2 11 b。」 際分裂刼作可使用組件氺 裂器,刀口楔形偶,:’舉例來說’如極化光束, ^ ^ ^ ^ W9Q ^ -T 或、、a射光學組件。除了這些組件,:Element 29 includes a beam splitting device m ^ Cheng Xi Ba Dan swelling device, which is used to further subdivide the light beam along the axis 27 in the knife beam, in this example. The beam splitting device 29 is guided to the 18th theta! What's in the knife? 釆 剡 剡 a 剡 π + Master 1 knife 1 projection system, 2 11 a and 2 11 b. ”Interstitial splitting operation can use component splitters, knife-edge wedge-shaped couples:‘ for example ’such as polarized beams, ^ ^ ^ ^ W9Q ^ -T or, a-radiation optical components. In addition to these components:
果分裂裝置29也可能^ I 匕括一個或更多透鏡以將分量光束;Fruit splitting device 29 may also include one or more lenses to separate component beams;
530334 五、發明說明(17) 2 1 7 a,2 1 7 b也提供的是快門裝置,允許隨意經由分量投影 系統2 11 a,2 1 1 b開始與結束(個別地)曝光。 致動裝置213a,213b允許近端215a,215b在平行於(圓) 工作台2半徑的方向精確地往前與往後移動。因此結合可 旋轉的工作台2,所以可使近端215a,215b經過基板台2平 面上的任何座標點(r,0 )至少一次。在這方案的精細部分 中,近端21 5a,21 5b可以一起致動,讓每個都完全經過所 有工作台平面上的座標點(r,Θ )。假設已知在工作台2的 基板上的特殊點(如對準標記的中心)的座標(r,0 ),則可 使用致動裝置21 3 a與213b,結合工作台2的適當旋轉,以 f 近端213a或21 3b通過特殊點。在這之前,已完成使用對準 裝置210對準的步驟,因此可決定如下事項: (1 )工作台2上基板可能的離心放置,即基板中心沒有放 在工作台2的轉動轴上; (2)基板周圍上的參考特徵(如缺口或平坦部分)的位置 使用這些資料,離心率可以修正(如使用圖i中的機 臂4調整工作台上基板的位置),而(2)中所指的參特科 的位置則做為決定0的基準。 1试 聚焦可以藉由垂直於平面上下移動工作台2, 9 節器213a ’ 213b讓近端215a,215b在該方^3疋使調530334 V. Description of the invention (17) 2 1 7 a, 2 1 7 b are also provided with a shutter device, allowing the exposure to be started and ended (individually) via the component projection system 2 11 a, 2 1 1 b at will. The actuating devices 213a, 213b allow the proximal ends 215a, 215b to move accurately forward and backward in a direction parallel to the radius of the (circular) table 2. Therefore, in combination with the rotatable table 2, the proximal ends 215a, 215b can be passed through any coordinate point (r, 0) on the substrate table 2 at least once. In the elaborate part of this scheme, the proximal ends 21 5a, 21 5b can be actuated together, each passing completely through the coordinate points (r, Θ) on all the planes of the table. Assuming that the coordinates (r, 0) of a special point (such as the center of the alignment mark) on the substrate of the table 2 are known, the actuators 21 3a and 213b can be used in combination with the appropriate rotation of the table 2 to f The proximal end 213a or 21 3b passes through a special point. Prior to this, the alignment step using the alignment device 210 has been completed, so the following can be determined: (1) The substrate may be placed on the table 2 by centrifugation, that is, the center of the substrate is not placed on the rotation axis of the table 2; ( 2) The position of reference features (such as notches or flat parts) around the substrate. Using these data, the eccentricity can be corrected (such as using the arm 4 in Figure i to adjust the position of the substrate on the table), and (2) The reference to the position of Santeco was used as a basis for determining 0. 1 test focus can be adjusted by moving the table vertically up to the plane 2, 9 section 213a '213b so that the proximal ends 215a, 215b in this side ^ 3 疋
具體實施例3 圖3顯示一基板W的部分平面圖,其中有一個 著周圍E的已知位置上有一個缺口n。也展千沾/,、沿 不的疋一些目標DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Fig. 3 shows a partial plan view of a substrate W, in which there is a notch n at a known position surrounding the E. Also show Qian Qian /, along with some goals
O:\71\71304-920102.ptc 第1頁 :^0354 7/年 修正 90111965 月 > 修正 合到分量投影系統2 1 1 a 因為失去強度即失去產 效率。 分量投影系統2 1 1 a, 端215a,215b可以轉移 而工作台2的遠端217a 的撓性可以藉由使每個 諸如一條光纖 束光 達成;這適當的液體是 液,而該光纖/軟管可 。在這個具體實施例中 光導分別有3毫米與8毫 ,2 1 1 b中以改善效率;在這方面, 生率,因此人們會想儘可能達到高 2 1 1 b皆為撓性使它們工作台2的近 到平行於工作台2的平面的方向, ,2 1 7 b則保持固定於該平面。這樣 分量投影系統包括一個撓性光導, 纖,或填充適當液體的空心軟管來 酸鹼(pH )值約為5的輕微酸式鹽溶 包括,舉例來說,二氧化矽或Ρ Μ Μ A ,分量投影系統2 1 1 a,2 1 1 b的撓性 米的直徑,以及大約1公尺的長度 也出 量投影 括一個 將輻射 的事, 器4 1也 近端2 1 入口孑L 。使用 有適當 ,以及 現在各個 系統2 1 1 b 或更多透 聚焦到基 係由熟諳 可在各個 5a , 2i5b 徑(2 1 7 a ' 於該模版 形式與尺 它們的使 具體實施例中的是聚焦系統,在圖4的分 中有較詳細的展示。這個聚焦系統4 3 (包 鏡45)放在近端215b,用來以適當的方式 板2 ;所述聚焦系統43的細節是設計選擇 此藝的人士的決定。如上所述的模版固定 撓性光導與個別的聚焦系統之間,結合於 。另外,各個分量投影系統2 1 1 a、2 1 1 b的 2 1 7 b )可以具有一個這樣的模版固定器4 1 固定器的模版,舉例來說,可包括一個具 寸的孔徑的(可交換)圖板。這圖案的例子 用,將會在下個實施例中討論。在末端O: \ 71 \ 71304-920102.ptc Page 1: ^ 0354 7 / year Amendment 90111965 > Amendment to component projection system 2 1 1 a Loss of productivity due to loss of intensity. The component projection system 2 1 1 a, the ends 215a, 215b can be transferred and the flexibility of the distal end 217a of the table 2 can be achieved by making each such as a fiber bundle of light; this proper liquid is liquid, and the fiber / soft OK. In this specific embodiment, the light guides are 3 mm and 8 mm, respectively, in 2 1 1 b to improve efficiency; in this respect, the production rate, so people will want to reach as high as 2 1 1 b are flexible to make them work The direction of the platform 2 near to the plane of the worktable 2, 2 1 7 b remains fixed on this plane. Such a component projection system includes a flexible light guide, fiber, or hollow tube filled with a suitable liquid to slightly acidic salt with a pH of about 5 including, for example, silicon dioxide or PMMA. The diameters of the flexible meters of the component projection systems 2 1 1 a, 2 1 1 b, and the length of about 1 meter are also included in the projection to include radiation, and the device 4 1 is also near the entrance 2 孑 L. Use it properly, and now each system 2 1 1 b or more transparent focus to the base system can be used in each 5a, 2i5b diameter (2 1 7 a 'in the template form and ruler their specific embodiment is The focusing system is shown in more detail in Figure 4. This focusing system 4 3 (packet lens 45) is placed at the proximal end 215b to plate 2 in an appropriate manner; the details of the focusing system 43 are design choices The decision of the person in the art. The template fixed flexible light guide as described above is combined with an individual focusing system. In addition, each component projection system 2 1 1 a, 2 1 1 b 2 1 7 b) may have One such stencil holder 4 1 The stencil of the holder may, for example, include a (interchangeable) drawing plate with an inch aperture. An example of this pattern will be discussed in the next embodiment. At the end
Q:\71\71304-910802.ptc 第21頁 5吞0334 修正彳 號 90111965 月 > 曰 修正 五、發明說明(18) 區域C與一個對準標記P1。如此處所敘述的,已完成在周 圍的區域/沿著與就在周圍内部延伸的環R的邊緣球狀物去 除(E B R ),且已完成對準標記Pi的標記清掃(MC )。這已藉 由這個方式提供模版圖案給圖2的分量投影系統2 1 1 a, 2 1 1 b,以在基板的平面上投影個別影像(點)2 1 9 a,2 1 9 c來 達成。如此處所敘述的,點2 1 9 a測量大約2 . 4 X 2 . 4平方毫 米,而點2 1 9 b測量大約0 . 9 X 0 . 9平方毫米。 如此處所敘述的,已於多沖程中完成邊緣球狀物去除 (EBR),每次固定點219a,219b其中之一(或兩者皆是)於 基板W表面上的周邊E内的一個適當的徑向位置,並繞著中 心q轉動基板W。使用點2 1 9 a完成粗糙的環A 1,A 2,而精細 的環A 3則使用點2 1 9 b,以便節省時間與增加產生率。 標記清掃也在對準標記Pi上實施。為了這個目的,點 2 1 9a已用來曝光標記?1附近的區域I。 雖然本發明的特定具體實施例已敘述如上,應了解本發 明可於所述之外實現。這些敘述不希望限制了本發明。Q: \ 71 \ 71304-910802.ptc Page 21 5 Swallow 0334 Amendment No. 90111965 > Name Amendment V. Description of the Invention (18) Area C and an alignment mark P1. As described herein, ball removal (E B R) has been completed in the surrounding area / along the edge of the ring R extending just inside the periphery, and mark cleaning (MC) of the alignment mark Pi has been completed. This has been achieved by providing a stencil pattern to the component projection system 2 1 1 a, 2 1 1 b of FIG. 2 in this way to project individual images (points) 2 1 9 a, 2 1 9 c on the plane of the substrate. As described herein, point 2 1 9a measures approximately 2.4 X 2.4 square millimeters, and point 2 1 9b measures approximately 0.9 X 0.9 square millimeters. As described herein, the edge ball removal (EBR) has been completed in multiple strokes, and each of the fixed points 219a, 219b (or both) is fixed to an appropriate one in the periphery E on the surface of the substrate W. Radial position, and rotate the substrate W about the center q. Use points 2 1 9 a to complete the rough rings A 1, A 2 and fine rings A 3 to use points 2 1 9 b to save time and increase productivity. Mark cleaning is also performed on the alignment mark Pi. For this purpose, has point 2 1 9a been used to expose the mark? Area I near 1. Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be implemented beyond what is described. These descriptions are not intended to limit the invention.
0:\71\71304-9108()2.prc 第23頁 530334 案號 90111965 年/月〆曰 修正 圖式簡單說明 圖式元件符號說明 2 轉盤(基板台) 4 基板操作機器人 6 輸入/輸出埠 8 光學曝光裝置 10 前置直線對準器 2 1 水銀燈 23 橢圓鏡片 25 調節鏡片 27 軸 29 光束分裂裝置 41 模版固定器 43 聚焦系統 45 透鏡 210 對準裝置 211a 分量投影系統 211b 分量投影系統 213a 致動裝置 213b 致動裝置 2 15a 近端 2 15b 近端 2 17a 遠端 217b 遠端 2 19a 影像(點)0: \ 71 \ 71304-9108 () 2.prc Page 23 530334 Case No. 9011 1965 / Month Modified drawing Brief description Graphic component symbol description 2 Turntable (base plate) 4 Base operation robot 6 Input / output port 8 Optical exposure device 10 Front linear aligner 2 1 Mercury lamp 23 Elliptical lens 25 Adjusting lens 27 Axes 29 Beam splitting device 41 Stencil holder 43 Focusing system 45 Lens 210 Alignment device 211a Component projection system 211b Component projection system 213a Actuation Device 213b Actuator 2 15a Proximal 2 15b Proximal 2 17a Distal 217b Distal 2 19a Image (spot)
O:\71\71304-920102.ptc 第24頁 530334 修正 案號90111965 年,月^日 圖式簡單說明 2 19b 影像(點) ΙΒΪ O:\71\71304-920102.ptc 第25頁O: \ 71 \ 71304-920102.ptc page 24 530334 Amendment No. 9011 1965, month ^ day Simple illustration of the drawing 2 19b image (point) ΙΒΪ O: \ 71 \ 71304-920102.ptc page 25
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TW90111965A TW530334B (en) | 2001-05-08 | 2001-05-18 | Optical exposure apparatus, lithographic projection tool, substract coating machine, and device manufacturing method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8054557B2 (en) | 2005-06-14 | 2011-11-08 | Carl Zeiss Smt Gmbh | Lithography projection objective, and a method for correcting image defects of the same |
TWI553701B (en) * | 2003-10-09 | 2016-10-11 | 尼康股份有限公司 | Exposure apparatus and exposure method, component manufacturing method |
-
2001
- 2001-05-18 TW TW90111965A patent/TW530334B/en not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI553701B (en) * | 2003-10-09 | 2016-10-11 | 尼康股份有限公司 | Exposure apparatus and exposure method, component manufacturing method |
US8054557B2 (en) | 2005-06-14 | 2011-11-08 | Carl Zeiss Smt Gmbh | Lithography projection objective, and a method for correcting image defects of the same |
US8879159B2 (en) | 2005-06-14 | 2014-11-04 | Carl Zeiss Smt Gmbh | Lithography projection objective, and a method for correcting image defects of the same |
US9316922B2 (en) | 2005-06-14 | 2016-04-19 | Carl Zeiss Smt Gmbh | Lithography projection objective, and a method for correcting image defects of the same |
US9964859B2 (en) | 2005-06-14 | 2018-05-08 | Carl Zeiss Smt Gmbh | Lithography projection objective, and a method for correcting image defects of the same |
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